ATE403237T1 - Methode zur herstellung eines piezoelektrischen bauteils - Google Patents

Methode zur herstellung eines piezoelektrischen bauteils

Info

Publication number
ATE403237T1
ATE403237T1 AT03293044T AT03293044T ATE403237T1 AT E403237 T1 ATE403237 T1 AT E403237T1 AT 03293044 T AT03293044 T AT 03293044T AT 03293044 T AT03293044 T AT 03293044T AT E403237 T1 ATE403237 T1 AT E403237T1
Authority
AT
Austria
Prior art keywords
acoustic wave
surface acoustic
wave element
producing
resin film
Prior art date
Application number
AT03293044T
Other languages
English (en)
Inventor
Masato Higuchi
Nobushige Araki
Hideki Shinkai
Original Assignee
Murata Manufacturing Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co filed Critical Murata Manufacturing Co
Application granted granted Critical
Publication of ATE403237T1 publication Critical patent/ATE403237T1/de

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders or supports
    • H03H9/10—Mounting in enclosures
    • H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
    • H03H9/1085—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a non-uniform sealing mass covering the non-active sides of the SAW device
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders or supports
    • H03H9/058—Holders or supports for surface acoustic wave devices
    • H03H9/059—Holders or supports for surface acoustic wave devices consisting of mounting pads or bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
    • H10N30/073—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies by fusion of metals or by adhesives
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07251—Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/10—Methods of surface bonding and/or assembly therefor
    • Y10T156/1052—Methods of surface bonding and/or assembly therefor with cutting, punching, tearing or severing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/10—Methods of surface bonding and/or assembly therefor
    • Y10T156/1089—Methods of surface bonding and/or assembly therefor of discrete laminae to single face of additional lamina
    • Y10T156/1092—All laminae planar and face to face
    • Y10T156/1093—All laminae planar and face to face with covering of discrete laminae with additional lamina

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Transition And Organic Metals Composition Catalysts For Addition Polymerization (AREA)
AT03293044T 2002-12-06 2003-12-05 Methode zur herstellung eines piezoelektrischen bauteils ATE403237T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002354712 2002-12-06
JP2003378190A JP2004201285A (ja) 2002-12-06 2003-11-07 圧電部品の製造方法および圧電部品

Publications (1)

Publication Number Publication Date
ATE403237T1 true ATE403237T1 (de) 2008-08-15

Family

ID=32314128

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03293044T ATE403237T1 (de) 2002-12-06 2003-12-05 Methode zur herstellung eines piezoelektrischen bauteils

Country Status (7)

Country Link
US (1) US7261792B2 (de)
EP (1) EP1427032B1 (de)
JP (1) JP2004201285A (de)
KR (1) KR100561319B1 (de)
CN (1) CN1323487C (de)
AT (1) ATE403237T1 (de)
DE (1) DE60322496D1 (de)

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JP6704359B2 (ja) * 2017-01-10 2020-06-03 三菱電機株式会社 電力用半導体装置
JP2019125871A (ja) 2018-01-12 2019-07-25 株式会社村田製作所 弾性波装置
CN108598254A (zh) * 2018-04-19 2018-09-28 嘉盛半导体(苏州)有限公司 滤波器封装方法及封装结构
JP7180555B2 (ja) * 2019-07-02 2022-11-30 株式会社村田製作所 電子部品の製造方法および電子部品製造装置
CN114868266B (zh) * 2020-01-10 2025-12-05 日本碍子株式会社 压电振动基板及压电振动元件
CN111327226B (zh) * 2020-03-11 2021-09-21 中国科学院兰州化学物理研究所 一种提高超声电机能量转换效率的方法
JP7508083B2 (ja) * 2020-03-25 2024-07-01 三安ジャパンテクノロジー株式会社 弾性波デバイスパッケージ、及び、弾性波デバイスを含むモジュール
CN115485980B (zh) * 2020-04-24 2025-03-25 株式会社村田制作所 高频模块以及通信装置
KR102459794B1 (ko) * 2020-05-25 2022-10-28 이주호 반도체 패키지의 전자파 차폐막 형성 방법
CN112583375A (zh) * 2020-12-15 2021-03-30 北京航天微电科技有限公司 一种对薄膜体声波滤波器进行封装的方法和封装器件
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Also Published As

Publication number Publication date
EP1427032B1 (de) 2008-07-30
US7261792B2 (en) 2007-08-28
CN1507150A (zh) 2004-06-23
US20040169444A1 (en) 2004-09-02
JP2004201285A (ja) 2004-07-15
KR20040049800A (ko) 2004-06-12
EP1427032A3 (de) 2006-01-11
EP1427032A2 (de) 2004-06-09
CN1323487C (zh) 2007-06-27
DE60322496D1 (de) 2008-09-11
KR100561319B1 (ko) 2006-03-16

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