ATE549795T1 - Oberflächenwellen-bauelement und verfahren zu seiner herstellung - Google Patents

Oberflächenwellen-bauelement und verfahren zu seiner herstellung

Info

Publication number
ATE549795T1
ATE549795T1 AT03291298T AT03291298T ATE549795T1 AT E549795 T1 ATE549795 T1 AT E549795T1 AT 03291298 T AT03291298 T AT 03291298T AT 03291298 T AT03291298 T AT 03291298T AT E549795 T1 ATE549795 T1 AT E549795T1
Authority
AT
Austria
Prior art keywords
producing
electrode
surface wave
wave component
insulating layer
Prior art date
Application number
AT03291298T
Other languages
English (en)
Inventor
Kenji Nishiyama
Takeshi Nakao
Michio Kadota
Original Assignee
Murata Manufacturing Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co filed Critical Murata Manufacturing Co
Application granted granted Critical
Publication of ATE549795T1 publication Critical patent/ATE549795T1/de

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/64—Filters using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02818—Means for compensation or elimination of undesirable effects
    • H03H9/02929—Means for compensation or elimination of undesirable effects of ageing changes of characteristics, e.g. electro-acousto-migration
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
    • H03H3/10—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves for obtaining desired frequency or temperature coefficient
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02559—Characteristics of substrate, e.g. cutting angles of lithium niobate or lithium-tantalate substrates
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
    • H03H9/14538—Formation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/42—Piezoelectric device making
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49016—Antenna or wave energy "plumbing" making
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
    • Y10T29/49133—Assembling to base an electrical component, e.g., capacitor, etc. with component orienting
    • Y10T29/49135—Assembling to base an electrical component, e.g., capacitor, etc. with component orienting and shaping, e.g., cutting or bending, etc.
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49155—Manufacturing circuit on or in base

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
AT03291298T 2002-07-24 2003-05-30 Oberflächenwellen-bauelement und verfahren zu seiner herstellung ATE549795T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002215614 2002-07-24
JP2003041480A JP3841053B2 (ja) 2002-07-24 2003-02-19 弾性表面波装置及びその製造方法

Publications (1)

Publication Number Publication Date
ATE549795T1 true ATE549795T1 (de) 2012-03-15

Family

ID=31190289

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03291298T ATE549795T1 (de) 2002-07-24 2003-05-30 Oberflächenwellen-bauelement und verfahren zu seiner herstellung

Country Status (5)

Country Link
US (3) US7230365B2 (de)
EP (4) EP2288026A1 (de)
JP (1) JP3841053B2 (de)
KR (1) KR100681692B1 (de)
AT (1) ATE549795T1 (de)

Families Citing this family (64)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3841053B2 (ja) * 2002-07-24 2006-11-01 株式会社村田製作所 弾性表面波装置及びその製造方法
US7642693B2 (en) * 2003-05-15 2010-01-05 National Institute Of Advanced Industrial Science And Technology Wurtzite thin film, laminate containing wurtzite crystalline layer and their manufacturing methods
JP2005117151A (ja) * 2003-10-03 2005-04-28 Murata Mfg Co Ltd 弾性表面波装置の製造方法及び弾性表面波装置
DE112004001841B4 (de) * 2003-10-03 2009-03-12 Murata Mfg. Co., Ltd., Nagaokakyo-shi Oberflächenwellenbauelement
JP2005176152A (ja) * 2003-12-15 2005-06-30 Alps Electric Co Ltd 弾性表面波素子及びその製造方法
WO2005060094A1 (ja) * 2003-12-16 2005-06-30 Murata Manufacturing Co., Ltd. 弾性境界波装置
WO2005083881A1 (ja) * 2004-03-02 2005-09-09 Murata Manufacturing Co., Ltd. 弾性表面波装置
CN100555858C (zh) 2004-03-12 2009-10-28 株式会社村田制作所 表面声波装置
DE112005001677B4 (de) * 2004-07-26 2009-11-12 Murata Manufacturing Co., Ltd., Nagaokakyo Oberflächenwellenbauelement
JP4359551B2 (ja) * 2004-10-08 2009-11-04 アルプス電気株式会社 弾性表面波素子の製造方法
JP4657002B2 (ja) * 2005-05-12 2011-03-23 信越化学工業株式会社 複合圧電基板
JPWO2007097186A1 (ja) * 2006-02-20 2009-07-09 株式会社村田製作所 弾性表面波装置
WO2007099742A1 (ja) * 2006-03-02 2007-09-07 Murata Manufacturing Co., Ltd. 弾性波装置及びその製造方法
DE102006019961B4 (de) * 2006-04-28 2008-01-10 Epcos Ag Elektroakustisches Bauelement
JP5213708B2 (ja) * 2006-06-16 2013-06-19 株式会社村田製作所 弾性表面波装置の製造方法
CN101485086B (zh) * 2006-07-05 2012-06-13 株式会社村田制作所 声表面波装置
JP4793448B2 (ja) * 2006-10-12 2011-10-12 株式会社村田製作所 弾性境界波装置
JP4992911B2 (ja) * 2006-12-27 2012-08-08 株式会社村田製作所 弾性表面波装置
WO2008108215A1 (ja) * 2007-03-06 2008-09-12 Murata Manufacturing Co., Ltd. 弾性境界波装置
CN101682308B (zh) 2007-06-06 2013-07-17 株式会社村田制作所 弹性表面波装置
CN101796723B (zh) 2007-10-30 2013-07-17 太阳诱电株式会社 弹性波元件、双工器、通信模块、以及通信装置
JP2009147818A (ja) * 2007-12-17 2009-07-02 Fujitsu Ltd 弾性波素子、フィルタ素子、通信モジュール、および通信装置
JP5110091B2 (ja) * 2007-12-20 2012-12-26 株式会社村田製作所 弾性表面波装置
WO2009090714A1 (ja) 2008-01-17 2009-07-23 Murata Manufacturing Co., Ltd. 弾性表面波装置
WO2009090715A1 (ja) 2008-01-17 2009-07-23 Murata Manufacturing Co., Ltd. 弾性表面波装置
CN102017407B (zh) * 2008-04-30 2014-03-19 株式会社村田制作所 弹性边界波装置
JP2010011440A (ja) * 2008-05-30 2010-01-14 Hitachi Ltd 弾性波装置及びそれを用いた高周波フィルタ
JP2010045533A (ja) * 2008-08-11 2010-02-25 Fujitsu Ltd 弾性波デバイスの製造方法
JP2010109894A (ja) 2008-10-31 2010-05-13 Fujitsu Ltd 弾性波フィルタ、デュープレクサ、通信モジュール、および通信装置
DE102008062605B4 (de) 2008-12-17 2018-10-18 Snaptrack, Inc. Bauelement, welches mit akustischen Wellen arbeitet, und Verfahren zu dessen Herstellung
JP4943462B2 (ja) * 2009-02-27 2012-05-30 太陽誘電株式会社 弾性波デバイス、デュープレクサ、通信モジュール、通信装置、弾性波デバイスの製造方法
CN102334290B (zh) * 2009-03-04 2014-09-17 株式会社村田制作所 表面声波元件及其制造方法
US8294330B1 (en) 2009-03-31 2012-10-23 Triquint Semiconductor, Inc. High coupling, low loss saw filter and associated method
JP2011041134A (ja) * 2009-08-17 2011-02-24 Taiyo Yuden Co Ltd 弾性波デバイスおよびその製造方法
US8044553B2 (en) * 2010-02-22 2011-10-25 Triquint Semiconductor, Inc. Temperature compensated surface acoustic wave device and method having buried interdigital transducers for providing an improved insertion loss and quality factor
JP2011182117A (ja) * 2010-02-26 2011-09-15 Taiyo Yuden Co Ltd 弾性波デバイスおよびその製造方法
DE102010014919B4 (de) 2010-04-14 2015-07-02 Epcos Ag Verfahren zur Herstellung einer dielektrischen Schicht auf einem Bauelement
US8378553B1 (en) * 2010-07-01 2013-02-19 Triquint Semiconductor, Inc. Buried idt SAW filter having low propagation loss
WO2012020649A1 (ja) * 2010-08-10 2012-02-16 株式会社村田製作所 弾性表面波デバイス
DE102010041973B4 (de) * 2010-10-05 2015-04-16 Leibniz-Institut Für Festkörper- Und Werkstoffforschung Dresden E.V. Bauelement auf der Basis akustischer Oberflächenwellen
WO2012090873A1 (ja) 2010-12-28 2012-07-05 京セラ株式会社 弾性波素子およびそれを用いた弾性波装置
KR101514742B1 (ko) * 2010-12-29 2015-04-23 가부시키가이샤 무라타 세이사쿠쇼 탄성 표면파 장치
US8723392B2 (en) * 2011-07-15 2014-05-13 International Business Machines Corporation Saw filter having planar barrier layer and method of making
US8552819B2 (en) 2011-10-26 2013-10-08 Triquint Semiconductor, Inc. High coupling, low loss saw filter and associated method
JP5976096B2 (ja) * 2012-03-02 2016-08-23 太陽誘電株式会社 弾性波フィルタ
US9236849B2 (en) 2012-04-19 2016-01-12 Triquint Semiconductor, Inc. High coupling, low loss PBAW device and associated method
CN105981297B (zh) * 2014-03-13 2018-09-14 株式会社村田制作所 弹性波装置
CN107112978B (zh) * 2014-12-24 2020-10-02 西铁城时计株式会社 表面声波器件
CN104868873A (zh) * 2015-05-27 2015-08-26 上海交通大学 一种多层复合结构声表面波器件基底
JP6601503B2 (ja) * 2015-10-23 2019-11-06 株式会社村田製作所 弾性波装置、高周波フロントエンド回路及び通信装置
KR102095213B1 (ko) * 2016-06-07 2020-03-31 가부시키가이샤 무라타 세이사쿠쇼 탄성파 장치
CN110178307B (zh) * 2017-01-17 2023-02-28 株式会社村田制作所 弹性波装置、高频前端电路以及通信装置
JP2018157564A (ja) 2017-03-16 2018-10-04 スカイワークス ソリューションズ, インコーポレイテッドSkyworks Solutions, Inc. 酸窒化ケイ素膜により覆われたインターディジタル電極を含む弾性波デバイス
US10686425B2 (en) 2017-06-30 2020-06-16 Texas Instruments Incorporated Bulk acoustic wave resonators having convex surfaces, and methods of forming the same
US10615772B2 (en) 2017-06-30 2020-04-07 Texas Instruments Incorporated Acoustic wave resonators having Fresnel surfaces
US10622966B2 (en) 2017-07-26 2020-04-14 Texas Instruments Incorporated Bulk acoustic wave resonators having a phononic crystal acoustic mirror
US10855251B2 (en) 2017-08-08 2020-12-01 Texas Instruments Incorporated Unreleased plane acoustic wave resonators
JP2019114986A (ja) * 2017-12-25 2019-07-11 株式会社村田製作所 弾性波装置
US12401342B2 (en) * 2019-04-03 2025-08-26 Tohoku University High-order mode surface acoustic wave devices
JP7175503B2 (ja) * 2019-04-05 2022-11-21 三安ジャパンテクノロジー株式会社 表面弾性波デバイス及びその製造方法
JP2024000433A (ja) * 2022-06-20 2024-01-05 株式会社アルバック 成膜方法及び弾性波デバイス
CN117081541B (zh) * 2023-10-18 2024-02-06 深圳新声半导体有限公司 声表面波谐振器装置及其制造方法、滤波器
GB202401249D0 (en) * 2024-01-31 2024-03-13 Univ Oxford Innovation Ltd Devices and method of fabrication thereof
CN119341503B (zh) * 2024-12-18 2025-05-09 中国科学技术大学 一种声波谐振器及其制备方法及电子设备

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3965444A (en) * 1975-01-03 1976-06-22 Raytheon Company Temperature compensated surface acoustic wave devices
US4243960A (en) * 1978-08-14 1981-01-06 The United States Of America As Represented By The Secretary Of The Navy Method and materials for tuning the center frequency of narrow-band surface-acoustic-wave (SAW) devices by means of dielectric overlays
JPS57145419A (en) 1981-03-05 1982-09-08 Clarion Co Ltd Surface acoustic wave element
US4527082A (en) * 1982-07-06 1985-07-02 General Electric Company Surface acoustic wave device from eutectic deposit
JPS61136312A (ja) 1984-12-06 1986-06-24 Alps Electric Co Ltd 弾性表面波素子
JPH06103819B2 (ja) 1988-03-14 1994-12-14 株式会社村田製作所 表面波デバイスの製造方法
JPH02295212A (ja) * 1989-05-09 1990-12-06 Fujitsu Ltd 弾性表面波共振子
JPH0522067A (ja) * 1991-07-15 1993-01-29 Oki Electric Ind Co Ltd 弾性表面波フイルタ
JPH0590872A (ja) * 1991-09-27 1993-04-09 Sumitomo Electric Ind Ltd 表面弾性波素子
JPH06164306A (ja) 1992-02-12 1994-06-10 Kokusai Electric Co Ltd 弾性表面波共振子
JPH06103819A (ja) 1992-09-21 1994-04-15 Hitachi Chem Co Ltd 異方導電性接着フィルム
WO1996004713A1 (en) 1994-08-05 1996-02-15 Japan Energy Corporation Surface acoustic wave device and production method thereof
US5815900A (en) * 1995-03-06 1998-10-06 Matsushita Electric Industrial Co., Ltd. Method of manufacturing a surface acoustic wave module
JPH0969748A (ja) * 1995-09-01 1997-03-11 Matsushita Electric Ind Co Ltd Ｓａｗデバイスおよびその製造方法
JPH09167936A (ja) 1995-10-13 1997-06-24 Fujitsu Ltd 弾性表面波装置
JPH09223944A (ja) 1995-12-13 1997-08-26 Fujitsu Ltd 弾性表面波素子及びその製造方法
JP3514015B2 (ja) * 1995-12-28 2004-03-31 株式会社村田製作所 弾性表面波装置及びその製造方法
JP3458573B2 (ja) * 1996-01-16 2003-10-20 株式会社村田製作所 端面反射型表面波装置の製造方法
DE69718693T2 (de) * 1996-03-08 2003-11-27 Matsushita Electric Industrial Co., Ltd. Elektronisches Bauteil und Herstellungsverfahren
KR19980013868A (ko) * 1996-08-05 1998-05-15 우덕창 박막 압전 소자(thin film type piezolectric element)
EP0920129B1 (de) 1997-05-08 2006-12-27 Kabushiki Kaisha Toshiba Elastische oberflächenwellenvorrichtung und verfahren zu deren herstellung
JP3470031B2 (ja) 1997-12-22 2003-11-25 京セラ株式会社 弾性表面波装置の製造方法
ATE303250T1 (de) * 1998-06-08 2005-09-15 Seiko Epson Corp Tintenstrahlaufzeichnungskopf und tintenstrahlaufzeichnungsvorrichtung
JP2000269771A (ja) 1999-03-12 2000-09-29 Nec Corp 弾性表面波デバイス及びその製造方法
JP3391309B2 (ja) 1999-09-02 2003-03-31 株式会社村田製作所 表面波装置及び通信機装置
JP2001148618A (ja) 1999-11-18 2001-05-29 Nec Corp 弾性表面波装置
JP3411908B2 (ja) * 1999-11-30 2003-06-03 ティーディーケイ株式会社 弾性表面波装置およびその製造方法
JP3414371B2 (ja) * 2000-07-31 2003-06-09 株式会社村田製作所 弾性表面波装置及びその製造方法
US6556104B2 (en) 2000-08-31 2003-04-29 Sawtek, Inc. Surface acoustic wave devices using optimized cuts of a piezoelectric substrate
JP3521864B2 (ja) * 2000-10-26 2004-04-26 株式会社村田製作所 弾性表面波素子
JP3926633B2 (ja) * 2001-06-22 2007-06-06 沖電気工業株式会社 Ｓａｗデバイス及びその製造方法
JP4060090B2 (ja) * 2002-02-15 2008-03-12 沖電気工業株式会社 弾性表面波素子
JP3841053B2 (ja) 2002-07-24 2006-11-01 株式会社村田製作所 弾性表面波装置及びその製造方法

Also Published As

Publication number Publication date
US20070214622A1 (en) 2007-09-20
US7418772B2 (en) 2008-09-02
EP1391988B1 (de) 2012-03-14
EP1391988A2 (de) 2004-02-25
EP2288024B1 (de) 2012-07-04
US20070132339A1 (en) 2007-06-14
JP3841053B2 (ja) 2006-11-01
US20040164644A1 (en) 2004-08-26
EP2288025A1 (de) 2011-02-23
JP2004112748A (ja) 2004-04-08
US7411334B2 (en) 2008-08-12
EP2288026A1 (de) 2011-02-23
US7230365B2 (en) 2007-06-12
KR20040010108A (ko) 2004-01-31
EP2288025B1 (de) 2016-01-06
KR100681692B1 (ko) 2007-02-09
EP1391988A3 (de) 2004-06-09
EP2288024A1 (de) 2011-02-23

Similar Documents

Publication Publication Date Title
ATE549795T1 (de) Oberflächenwellen-bauelement und verfahren zu seiner herstellung
EP0886329A3 (de) Elektrolumineszentes Bauteil, elektrolumineszentes Gerät und Herstellungsverfahren
ATE557419T1 (de) Verfahren zur herstellung eines halbleiterbauelements
ATE445233T1 (de) Nitrid-halbleiterbauelement mit einem trägersubstrat und verfahren zu seiner herstellung
WO2003092041A3 (en) Method for fabricating a soi substrate a high resistivity support substrate
ATE531242T1 (de) Verfahren zur herstellung eines elektronsichen moduls und elektronisches modul
EP1291920A3 (de) Solarzelle, Herstellungsverfahren und Apparat zur Herstellung derselben
WO2005039868A3 (de) Strukturierung von elektrischen funktionsschichten mittels einer transferfolie und strukturierung des klebers
WO2003031136A3 (en) Methods for patterning using liquid embossing
ATE491225T1 (de) Verfahren zur herstellung dünner schichten, die mikrokomponenten enthalten
ATE392712T1 (de) Verfahren zur herstellung eines germanium-on- insulator-wafers (geoi)
DE50209164D1 (de) Spritzgegossener Leiterträger und Verfahren zu seiner Herstellung
DE60333401D1 (de) Verfahren zur herstellung einer elektrisch leitfähigen struktur
DE50010475D1 (de) Akustischer spiegel und verfahren zu dessen herstellung
TW200701817A (en) Method for producing polymeric capacitive ultrasonic transducer
DE59510080D1 (de) Halbleiter-Speichervorrichtung unter Verwendung eines ferroelektrischen Dielektrikums und Verfahren zur Herstellung
DE50204112D1 (de) Metallische oberfläche eines körpers, verfahren zur herstellung einer strukturierten metallischen oberfläche eines körpers und dessen verwendung
ATE485627T1 (de) Elektronisches bauelement und verfahren zur herstellung
DE602004019265D1 (de) Akustische Oberflächenwellenanordnung und Verfahren zu ihrer Herstellung
DE602004029413D1 (de) Verfahren zur Herstellung einer akustischen Oberflächenwellenvorrichtung
DE60324222D1 (de) Verfahren zur Herstellung strukturierter Schichten
ATE425552T1 (de) Verfahren zur herstellung von kondensatoren und von dielektrischen schichten für kondensatoren
TW328167B (en) Method for manufacturing lead frame
DE60139444D1 (de) Verfahren zur herstellung eines auf einem trägersubstrat geformten piezoelektrischen filters mit einem akustischen resonator auf einer akustischen reflektorschicht
TWI266367B (en) Method for smoothing the sidewall ripples of an etching structure