ATE404975T1 - Verfahren zum lesen von multibit rom-zellen - Google Patents

Verfahren zum lesen von multibit rom-zellen

Info

Publication number
ATE404975T1
ATE404975T1 AT05251525T AT05251525T ATE404975T1 AT E404975 T1 ATE404975 T1 AT E404975T1 AT 05251525 T AT05251525 T AT 05251525T AT 05251525 T AT05251525 T AT 05251525T AT E404975 T1 ATE404975 T1 AT E404975T1
Authority
AT
Austria
Prior art keywords
switch
row
reading
reading data
multibit
Prior art date
Application number
AT05251525T
Other languages
English (en)
Inventor
Simon Chang
Original Assignee
Cambridge Silicon Radio Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cambridge Silicon Radio Ltd filed Critical Cambridge Silicon Radio Ltd
Application granted granted Critical
Publication of ATE404975T1 publication Critical patent/ATE404975T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5692—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency read-only digital stores using storage elements with more than two stable states

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
AT05251525T 2004-03-17 2005-03-14 Verfahren zum lesen von multibit rom-zellen ATE404975T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB0406038.0A GB0406038D0 (en) 2004-03-17 2004-03-17 Method for reading rom cell

Publications (1)

Publication Number Publication Date
ATE404975T1 true ATE404975T1 (de) 2008-08-15

Family

ID=32117901

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05251525T ATE404975T1 (de) 2004-03-17 2005-03-14 Verfahren zum lesen von multibit rom-zellen

Country Status (5)

Country Link
US (1) US7411808B2 (de)
EP (1) EP1577898B1 (de)
AT (1) ATE404975T1 (de)
DE (1) DE602005008788D1 (de)
GB (1) GB0406038D0 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7324364B2 (en) * 2006-02-27 2008-01-29 Agere Systems Inc. Layout techniques for memory circuitry
US7301828B2 (en) * 2006-02-27 2007-11-27 Agere Systems Inc. Decoding techniques for read-only memory
FR2915019B1 (fr) * 2007-04-13 2009-07-17 Dolphin Integration Sa Memoire rom multibit
US7816875B2 (en) * 2008-01-24 2010-10-19 Viking Access Systems, Llc High torque gearless actuation at low speeds for swing gate, roll-up gate, slide gate, and vehicular barrier operators
JP2010010369A (ja) * 2008-06-26 2010-01-14 Panasonic Corp 混載メモリ装置及び半導体装置
JP6122801B2 (ja) * 2014-03-13 2017-04-26 株式会社東芝 半導体記憶装置
US11152060B2 (en) * 2019-06-21 2021-10-19 Intel Corporation Multi-bit read-only memory device
CN114300028B (zh) * 2021-12-14 2023-06-16 成都海光微电子技术有限公司 Rom存储单元及rom存储单元存储信息的读取方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5870326A (en) * 1997-08-12 1999-02-09 Intel Corporation Information encoding by multiple line selection
US6002607A (en) * 1998-02-24 1999-12-14 National Semiconductor Corporation Read-only-memory (ROM) having a memory cell that stores a plurality of bits of information
FR2794895B1 (fr) * 1999-06-11 2001-09-14 St Microelectronics Sa Dispositif semiconducteur integre de memoire morte
US6355550B1 (en) * 2000-05-19 2002-03-12 Motorola, Inc. Ultra-late programming ROM and method of manufacture
FR2826170B1 (fr) * 2001-06-15 2003-12-12 Dolphin Integration Sa Memoire rom a points memoire multibit
US6590797B1 (en) * 2002-01-09 2003-07-08 Tower Semiconductor Ltd. Multi-bit programmable memory cell having multiple anti-fuse elements

Also Published As

Publication number Publication date
EP1577898A2 (de) 2005-09-21
EP1577898B1 (de) 2008-08-13
EP1577898A3 (de) 2006-08-30
GB0406038D0 (en) 2004-04-21
US7411808B2 (en) 2008-08-12
DE602005008788D1 (de) 2008-09-25
US20050213362A1 (en) 2005-09-29

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Legal Events

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