ATE408857T1 - Methode und system zur detektion einer marke - Google Patents

Methode und system zur detektion einer marke

Info

Publication number
ATE408857T1
ATE408857T1 AT98954761T AT98954761T ATE408857T1 AT E408857 T1 ATE408857 T1 AT E408857T1 AT 98954761 T AT98954761 T AT 98954761T AT 98954761 T AT98954761 T AT 98954761T AT E408857 T1 ATE408857 T1 AT E408857T1
Authority
AT
Austria
Prior art keywords
alignment mark
mark
optical system
image
photoelectric detector
Prior art date
Application number
AT98954761T
Other languages
English (en)
Inventor
Naomasa Shiraishi
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Application granted granted Critical
Publication of ATE408857T1 publication Critical patent/ATE408857T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7065—Production of alignment light, e.g. light source, control of coherence, polarization, pulse length, wavelength
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7049—Technique, e.g. interferometric
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7084—Position of mark on substrate, i.e. position in (x, y, z) of mark, e.g. buried or resist covered mark, mark on rearside, at the substrate edge, in the circuit area, latent image mark, marks in plural levels

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Controlling Rewinding, Feeding, Winding, Or Abnormalities Of Webs (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Credit Cards Or The Like (AREA)
AT98954761T 1997-11-20 1998-11-19 Methode und system zur detektion einer marke ATE408857T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP31923997 1997-11-20

Publications (1)

Publication Number Publication Date
ATE408857T1 true ATE408857T1 (de) 2008-10-15

Family

ID=18107976

Family Applications (1)

Application Number Title Priority Date Filing Date
AT98954761T ATE408857T1 (de) 1997-11-20 1998-11-19 Methode und system zur detektion einer marke

Country Status (7)

Country Link
US (1) US6285455B1 (de)
EP (1) EP1041608B1 (de)
JP (1) JP4192423B2 (de)
AT (1) ATE408857T1 (de)
AU (1) AU1174599A (de)
DE (1) DE69840031D1 (de)
WO (1) WO1999027567A1 (de)

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* Cited by examiner, † Cited by third party
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DE69840031D1 (de) 1997-11-20 2008-10-30 Nikon Corp Methode und System zur Detektion einer Marke
US7057299B2 (en) * 2000-02-03 2006-06-06 Taiwan Semiconductor Manufacturing Co., Ltd. Alignment mark configuration
US6704089B2 (en) * 2000-04-28 2004-03-09 Asml Netherlands B.V. Lithographic projection apparatus, a method for determining a position of a substrate alignment mark, a device manufacturing method and device manufactured thereby
KR100500469B1 (ko) * 2001-01-12 2005-07-12 삼성전자주식회사 정렬마크와 이를 이용하는 노광정렬시스템 및 그 정렬방법
US6633048B2 (en) * 2001-05-03 2003-10-14 Northrop Grumman Corporation High output extreme ultraviolet source
US20040005769A1 (en) * 2002-07-03 2004-01-08 Cabot Microelectronics Corp. Method and apparatus for endpoint detection
JP4222927B2 (ja) * 2002-09-20 2009-02-12 エーエスエムエル ネザーランズ ビー．ブイ． 少なくとも２波長を使用するリソグラフィ装置用アライメント・システム
US6774452B1 (en) 2002-12-17 2004-08-10 Cypress Semiconductor Corporation Semiconductor structure having alignment marks with shallow trench isolation
KR100519948B1 (ko) * 2003-05-20 2005-10-10 엘지.필립스 엘시디 주식회사 비정질 실리콘의 결정화 공정 및 이를 이용한 스위칭 소자
DE10356519A1 (de) * 2003-12-03 2005-07-07 Infineon Technologies Ag Verfahren und optisches System zum Erfassen einer geometrischen Form auf einem Halbleitersubstrat
US7565219B2 (en) * 2003-12-09 2009-07-21 Asml Netherlands B.V. Lithographic apparatus, method of determining a model parameter, device manufacturing method, and device manufactured thereby
JP4777731B2 (ja) * 2005-03-31 2011-09-21 富士通セミコンダクター株式会社 半導体装置の製造方法
US7612892B2 (en) * 2005-10-06 2009-11-03 Nikon Corporation Imaging optical system configured with through the lens optics for producing control information
JP5425363B2 (ja) * 2006-11-28 2014-02-26 ルネサスエレクトロニクス株式会社 半導体装置、及び表示装置
JP4966719B2 (ja) 2007-04-11 2012-07-04 株式会社日立ハイテクノロジーズ 校正用標準部材及びその作製方法、並びにそれを用いた電子ビーム装置
JP2008270072A (ja) * 2007-04-24 2008-11-06 Sii Nanotechnology Inc 荷電粒子ビーム装置
JP2009094512A (ja) * 2007-10-09 2009-04-30 Asml Netherlands Bv 位置合わせ方法及び装置、リソグラフィ装置、計測装置、及びデバイス製造方法
CN101435997B (zh) * 2007-11-15 2012-06-27 上海华虹Nec电子有限公司 光刻套刻精度的测试图形及测量方法
NL1036179A1 (nl) * 2007-11-20 2009-05-25 Asml Netherlands Bv Lithographic apparatus and method.
JP5406624B2 (ja) * 2009-08-10 2014-02-05 キヤノン株式会社 検出装置、露光装置及びデバイスの製造方法
US8088633B2 (en) * 2009-12-02 2012-01-03 Ultratech, Inc. Optical alignment methods for forming LEDs having a rough surface
CN102243442B (zh) * 2010-05-12 2014-11-12 上海微电子装备有限公司 硅片对准光源幅度调制装置
US8422027B2 (en) 2010-06-08 2013-04-16 Nikon Corporation Imaging optical system for producing control information regarding lateral movement of an image plane or an object plane
DE102013220190B4 (de) * 2013-10-07 2021-08-12 Dr. Johannes Heidenhain Gmbh Messteilung und lichtelektrische Positionsmesseinrichtung mit dieser Messteilung
CN104359410B (zh) * 2014-12-01 2017-05-17 清华大学 一种利用可旋转光栅测量的位移测量系统
JP6378117B2 (ja) * 2015-03-13 2018-08-22 東芝メモリ株式会社 アライメントマークの形成方法および半導体装置
JP6553817B2 (ja) 2016-01-19 2019-07-31 エーエスエムエル ネザーランズ ビー．ブイ． 位置センシング機構、そのような機構を含むリソグラフィ装置、位置センシング方法、及びデバイス製造方法
JP6744986B2 (ja) * 2016-08-30 2020-08-19 エーエスエムエル ネザーランズ ビー．ブイ． 位置センサ、リソグラフィ装置およびデバイス製造方法
JP6791584B2 (ja) * 2017-02-01 2020-11-25 株式会社ディスコ 加工方法
JP6584567B1 (ja) * 2018-03-30 2019-10-02 キヤノン株式会社 リソグラフィ装置、パターン形成方法及び物品の製造方法
US12372879B2 (en) * 2021-12-17 2025-07-29 Micron Technology, Inc. Apparatuses and methods for diffraction base overlay measurements
US20230296994A1 (en) * 2022-03-21 2023-09-21 Infineon Technologies Ag Back Side to Front Side Alignment on a Semiconductor Wafer with Special Structures

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63240018A (ja) 1987-03-27 1988-10-05 Matsushita Electric Ind Co Ltd アライメント方法
JP2773147B2 (ja) * 1988-08-19 1998-07-09 株式会社ニコン 露光装置の位置合わせ装置及び方法
US5151750A (en) 1989-04-14 1992-09-29 Nikon Corporation Alignment apparatus
JP2906433B2 (ja) 1989-04-25 1999-06-21 株式会社ニコン 投影露光装置及び投影露光方法
JPH032504A (ja) * 1989-05-30 1991-01-08 Nikon Corp 位置合わせ装置
JPH05326360A (ja) * 1992-05-20 1993-12-10 Victor Co Of Japan Ltd 半導体装置の製造方法及び製造装置
JPH06260389A (ja) 1993-03-05 1994-09-16 Nikon Corp アライメント装置
US5721605A (en) 1994-03-29 1998-02-24 Nikon Corporation Alignment device and method with focus detection system
JPH07321030A (ja) 1994-03-29 1995-12-08 Nikon Corp アライメント装置
JPH08250391A (ja) * 1995-03-10 1996-09-27 Nikon Corp 位置検出用マーク及び位置検出方法
DE69840031D1 (de) 1997-11-20 2008-10-30 Nikon Corp Methode und System zur Detektion einer Marke

Also Published As

Publication number Publication date
DE69840031D1 (de) 2008-10-30
AU1174599A (en) 1999-06-15
US6285455B1 (en) 2001-09-04
EP1041608A4 (de) 2003-11-19
EP1041608B1 (de) 2008-09-17
WO1999027567A1 (en) 1999-06-03
EP1041608A1 (de) 2000-10-04
JP4192423B2 (ja) 2008-12-10

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Legal Events

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RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties
REN Ceased due to non-payment of the annual fee