ATE409350T1 - Extraktionsverfahren für die lastverteilung in einem halbleiterbauelement - Google Patents

Extraktionsverfahren für die lastverteilung in einem halbleiterbauelement

Info

Publication number
ATE409350T1
ATE409350T1 AT05109600T AT05109600T ATE409350T1 AT E409350 T1 ATE409350 T1 AT E409350T1 AT 05109600 T AT05109600 T AT 05109600T AT 05109600 T AT05109600 T AT 05109600T AT E409350 T1 ATE409350 T1 AT E409350T1
Authority
AT
Austria
Prior art keywords
charge
pumping
spatial
distribution
channel length
Prior art date
Application number
AT05109600T
Other languages
English (en)
Inventor
Arnaud Furnemont
Original Assignee
Imec Inter Uni Micro Electr
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Imec Inter Uni Micro Electr filed Critical Imec Inter Uni Micro Electr
Application granted granted Critical
Publication of ATE409350T1 publication Critical patent/ATE409350T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • G11C16/0475—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS] comprising two or more independent storage sites which store independent data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
    • G11C16/3495—Circuits or methods to detect or delay wearout of nonvolatile EPROM or EEPROM memory devices, e.g. by counting numbers of erase or reprogram cycles, by using multiple memory areas serially or cyclically

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Die Bonding (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)
AT05109600T 2005-06-03 2005-10-14 Extraktionsverfahren für die lastverteilung in einem halbleiterbauelement ATE409350T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US68707605P 2005-06-03 2005-06-03
US70485905P 2005-08-01 2005-08-01
EP05109600A EP1732080B1 (de) 2005-06-03 2005-10-14 Extraktionsverfahren für die Lastverteilung in einem Halbleiterbauelement

Publications (1)

Publication Number Publication Date
ATE409350T1 true ATE409350T1 (de) 2008-10-15

Family

ID=36975251

Family Applications (2)

Application Number Title Priority Date Filing Date
AT05109600T ATE409350T1 (de) 2005-06-03 2005-10-14 Extraktionsverfahren für die lastverteilung in einem halbleiterbauelement
AT06763541T ATE445901T1 (de) 2005-06-03 2006-06-06 Verfahren zum extrahieren der in einem halbleiterbauelement gespeicherten ladungsverteilung

Family Applications After (1)

Application Number Title Priority Date Filing Date
AT06763541T ATE445901T1 (de) 2005-06-03 2006-06-06 Verfahren zum extrahieren der in einem halbleiterbauelement gespeicherten ladungsverteilung

Country Status (6)

Country Link
US (2) US7388785B2 (de)
EP (2) EP1732080B1 (de)
JP (2) JP5148076B2 (de)
AT (2) ATE409350T1 (de)
DE (2) DE602005009937D1 (de)
WO (1) WO2006128922A1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1732081B1 (de) * 2005-06-03 2010-03-10 Imec Verfahren zur Steuerung einen nichtflüchtigen Ladungshaftstellen-Speicheranordnungen und Verfahren zur Bestimmung der Programmier-/Löschparameter
US7482619B2 (en) * 2005-09-07 2009-01-27 Samsung Electronics Co., Ltd. Charge trap memory device comprising composite of nanoparticles and method of fabricating the charge trap memory device
US8394683B2 (en) 2008-01-15 2013-03-12 Micron Technology, Inc. Methods of forming semiconductor constructions, and methods of forming NAND unit cells
US8841682B2 (en) * 2009-08-27 2014-09-23 Cree, Inc. Transistors with a gate insulation layer having a channel depleting interfacial charge and related fabrication methods
US8941171B2 (en) * 2010-07-02 2015-01-27 Micron Technology, Inc. Flatband voltage adjustment in a semiconductor device
JP5801049B2 (ja) * 2010-12-28 2015-10-28 ラピスセミコンダクタ株式会社 半導体記憶装置へのデータの書込み方法及び半導体記憶装置
CN102163568B (zh) * 2011-03-07 2012-10-10 北京大学 一种提取mos管沿沟道电荷分布的方法
US8832619B2 (en) * 2013-01-28 2014-09-09 Taiwan Semiconductor Manufacturing Co., Ltd. Analytical model for predicting current mismatch in metal oxide semiconductor arrays
WO2018148549A1 (en) * 2017-02-10 2018-08-16 Sunedison Semiconductor Limited Methods for assessing semiconductor structures
KR102783321B1 (ko) 2020-08-25 2025-03-20 삼성디스플레이 주식회사 표시 장치 및 이의 구동 방법
CN121389677B (zh) * 2025-12-26 2026-03-24 兰州理工大学 基于隧穿效应与空穴抽出受限的空间电荷分布计算方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5583810A (en) 1991-01-31 1996-12-10 Interuniversitair Micro-Elektronica Centrum Vzw Method for programming a semiconductor memory device
JP3247396B2 (ja) * 1991-03-29 2002-01-15 株式会社東芝 半導体装置の評価方法
IL125604A (en) * 1997-07-30 2004-03-28 Saifun Semiconductors Ltd Non-volatile electrically erasable and programmble semiconductor memory cell utilizing asymmetrical charge
US6768165B1 (en) * 1997-08-01 2004-07-27 Saifun Semiconductors Ltd. Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping
US6331953B1 (en) * 2000-02-16 2001-12-18 Advanced Micro Devices Intelligent ramped gate and ramped drain erasure for non-volatile memory cells
US6396741B1 (en) 2000-05-04 2002-05-28 Saifun Semiconductors Ltd. Programming of nonvolatile memory cells
US6928001B2 (en) 2000-12-07 2005-08-09 Saifun Semiconductors Ltd. Programming and erasing methods for a non-volatile memory cell
US6490204B2 (en) * 2000-05-04 2002-12-03 Saifun Semiconductors Ltd. Programming and erasing methods for a reference cell of an NROM array
US6801453B2 (en) * 2002-04-02 2004-10-05 Macronix International Co., Ltd. Method and apparatus of a read scheme for non-volatile memory
KR100542701B1 (ko) 2003-11-18 2006-01-11 주식회사 하이닉스반도체 낸드 플래시 메모리 소자의 문턱전압 측정 방법
US7151692B2 (en) * 2004-01-27 2006-12-19 Macronix International Co., Ltd. Operation scheme for programming charge trapping non-volatile memory
US7075828B2 (en) 2004-04-26 2006-07-11 Macronix International Co., Intl. Operation scheme with charge balancing erase for charge trapping non-volatile memory
US7345920B2 (en) 2004-09-09 2008-03-18 Macronix International Co., Ltd. Method and apparatus for sensing in charge trapping non-volatile memory
US20060113586A1 (en) * 2004-11-29 2006-06-01 Macronix International Co., Ltd. Charge trapping dielectric structure for non-volatile memory
JP2006196650A (ja) * 2005-01-13 2006-07-27 Sharp Corp 半導体不揮発性メモリ装置およびその消去方法
EP1732081B1 (de) 2005-06-03 2010-03-10 Imec Verfahren zur Steuerung einen nichtflüchtigen Ladungshaftstellen-Speicheranordnungen und Verfahren zur Bestimmung der Programmier-/Löschparameter

Also Published As

Publication number Publication date
JP5191382B2 (ja) 2013-05-08
DE602005009937D1 (de) 2008-11-06
US20060284082A1 (en) 2006-12-21
US20090135652A1 (en) 2009-05-28
EP1732080A1 (de) 2006-12-13
JP2006352111A (ja) 2006-12-28
EP1886320A1 (de) 2008-02-13
JP5148076B2 (ja) 2013-02-20
JP2008546194A (ja) 2008-12-18
WO2006128922A1 (en) 2006-12-07
DE602006009797D1 (de) 2009-11-26
EP1886320B1 (de) 2009-10-14
EP1732080B1 (de) 2008-09-24
ATE445901T1 (de) 2009-10-15
US7933153B2 (en) 2011-04-26
US7388785B2 (en) 2008-06-17

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