ATE410727T1 - Ordnung von blöcken innerhalb eines nicht- flüchtligen speichers zur erheblichen reduzierung der schreibezeit in einem sektor - Google Patents

Ordnung von blöcken innerhalb eines nicht- flüchtligen speichers zur erheblichen reduzierung der schreibezeit in einem sektor

Info

Publication number
ATE410727T1
ATE410727T1 AT00957863T AT00957863T ATE410727T1 AT E410727 T1 ATE410727 T1 AT E410727T1 AT 00957863 T AT00957863 T AT 00957863T AT 00957863 T AT00957863 T AT 00957863T AT E410727 T1 ATE410727 T1 AT E410727T1
Authority
AT
Austria
Prior art keywords
block
blocks
sector
volatile memory
significantly reduce
Prior art date
Application number
AT00957863T
Other languages
English (en)
Inventor
Petro Estakhri
Berhanu Iman
Original Assignee
Lexar Media Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=23540599&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=ATE410727(T1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Lexar Media Inc filed Critical Lexar Media Inc
Application granted granted Critical
Publication of ATE410727T1 publication Critical patent/ATE410727T1/de

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C8/00Arrangements for selecting an address in a digital store
    • G11C8/12Group selection circuits, e.g. for memory block selection, chip selection, array selection
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • G11C16/08Address circuits; Decoders; Word-line control circuits
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • G11C16/10Programming or data input circuits
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • G11C16/10Programming or data input circuits
    • G11C16/102External programming circuits, e.g. EPROM programmers; In-circuit programming or reprogramming; EPROM emulators

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Read Only Memory (AREA)
  • Memory System (AREA)
  • Signal Processing For Digital Recording And Reproducing (AREA)
AT00957863T 1999-09-03 2000-08-25 Ordnung von blöcken innerhalb eines nicht- flüchtligen speichers zur erheblichen reduzierung der schreibezeit in einem sektor ATE410727T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/389,994 US6141249A (en) 1999-04-01 1999-09-03 Organization of blocks within a nonvolatile memory unit to effectively decrease sector write operation time

Publications (1)

Publication Number Publication Date
ATE410727T1 true ATE410727T1 (de) 2008-10-15

Family

ID=23540599

Family Applications (1)

Application Number Title Priority Date Filing Date
AT00957863T ATE410727T1 (de) 1999-09-03 2000-08-25 Ordnung von blöcken innerhalb eines nicht- flüchtligen speichers zur erheblichen reduzierung der schreibezeit in einem sektor

Country Status (7)

Country Link
US (1) US6141249A (de)
EP (1) EP1242868B1 (de)
JP (2) JP2003508861A (de)
AT (1) ATE410727T1 (de)
AU (1) AU6942100A (de)
DE (1) DE60040484D1 (de)
WO (1) WO2001018640A1 (de)

Families Citing this family (88)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6978342B1 (en) 1995-07-31 2005-12-20 Lexar Media, Inc. Moving sectors within a block of information in a flash memory mass storage architecture
US8171203B2 (en) 1995-07-31 2012-05-01 Micron Technology, Inc. Faster write operations to nonvolatile memory using FSInfo sector manipulation
US5845313A (en) 1995-07-31 1998-12-01 Lexar Direct logical block addressing flash memory mass storage architecture
US6728851B1 (en) 1995-07-31 2004-04-27 Lexar Media, Inc. Increasing the memory performance of flash memory devices by writing sectors simultaneously to multiple flash memory devices
DE19980546B4 (de) * 1998-03-02 2011-01-27 Lexar Media, Inc., Fremont Flash-Speicherkarte mit erweiterter Betriebsmodus-Erkennung und benutzerfreundlichem Schnittstellensystem
US6901457B1 (en) 1998-11-04 2005-05-31 Sandisk Corporation Multiple mode communications system
KR100544175B1 (ko) * 1999-05-08 2006-01-23 삼성전자주식회사 링킹 타입 정보를 저장하는 기록 매체와 결함 영역 처리 방법
US7102671B1 (en) 2000-02-08 2006-09-05 Lexar Media, Inc. Enhanced compact flash memory card
US6606628B1 (en) * 2000-02-14 2003-08-12 Cisco Technology, Inc. File system for nonvolatile memory
US6426893B1 (en) 2000-02-17 2002-07-30 Sandisk Corporation Flash eeprom system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks
US7167944B1 (en) 2000-07-21 2007-01-23 Lexar Media, Inc. Block management for mass storage
US7155559B1 (en) * 2000-08-25 2006-12-26 Lexar Media, Inc. Flash memory architecture with separate storage of overhead and user data
US6772274B1 (en) 2000-09-13 2004-08-03 Lexar Media, Inc. Flash memory system and method implementing LBA to PBA correlation within flash memory array
JP4059473B2 (ja) * 2001-08-09 2008-03-12 株式会社ルネサステクノロジ メモリカード及びメモリコントローラ
GB0123417D0 (en) 2001-09-28 2001-11-21 Memquest Ltd Improved data processing
GB0123421D0 (en) 2001-09-28 2001-11-21 Memquest Ltd Power management system
GB0123415D0 (en) 2001-09-28 2001-11-21 Memquest Ltd Method of writing data to non-volatile memory
GB0123419D0 (en) 2001-09-28 2001-11-21 Memquest Ltd Data handling system
GB0123416D0 (en) 2001-09-28 2001-11-21 Memquest Ltd Non-volatile memory control
GB0123410D0 (en) 2001-09-28 2001-11-21 Memquest Ltd Memory system for data storage and retrieval
WO2003060722A1 (en) * 2002-01-09 2003-07-24 Renesas Technology Corp. Memory system and memory card
TWI240861B (en) * 2002-01-11 2005-10-01 Integrated Circuit Solution In Data access method and architecture of flash memory
US7246268B2 (en) * 2002-01-16 2007-07-17 Sandisk Corporation Method and apparatus for dynamic degradation detection
US6957295B1 (en) 2002-01-18 2005-10-18 Lexar Media, Inc. File management of one-time-programmable nonvolatile memory devices
US6950918B1 (en) 2002-01-18 2005-09-27 Lexar Media, Inc. File management of one-time-programmable nonvolatile memory devices
US6732222B1 (en) * 2002-02-01 2004-05-04 Silicon Motion, Inc. Method for performing flash memory file management
US6839826B2 (en) * 2002-02-06 2005-01-04 Sandisk Corporation Memory device with pointer structure to map logical to physical addresses
US7231643B1 (en) 2002-02-22 2007-06-12 Lexar Media, Inc. Image rescue system including direct communication between an application program and a device driver
JP2005518589A (ja) * 2002-02-22 2005-06-23 レクサー メディア,インク. インジケータライトが一体化されたリムーバブル記憶媒体
DE10256509B4 (de) * 2002-06-19 2008-06-12 Hyperstone Gmbh Verfahren zum Adressieren von blockweise löschbaren Speichern
US6973519B1 (en) 2003-06-03 2005-12-06 Lexar Media, Inc. Card identification compatibility
WO2005050453A1 (ja) * 2003-11-18 2005-06-02 Matsushita Electric Industrial Co., Ltd. ファイル記録装置
US20050138464A1 (en) * 2003-11-21 2005-06-23 Chong Pohsoon Scratch fill using scratch tracking table
WO2005059854A2 (en) 2003-12-17 2005-06-30 Lexar Media, Inc. Electronic equipment point-of-sale activation to avoid theft
US7383375B2 (en) * 2003-12-30 2008-06-03 Sandisk Corporation Data run programming
US7433993B2 (en) * 2003-12-30 2008-10-07 San Disk Corportion Adaptive metablocks
US20050144363A1 (en) * 2003-12-30 2005-06-30 Sinclair Alan W. Data boundary management
US7139864B2 (en) 2003-12-30 2006-11-21 Sandisk Corporation Non-volatile memory and method with block management system
CN100433195C (zh) * 2003-12-31 2008-11-12 深圳市朗科科技股份有限公司 闪存介质数据写入方法
JP2005222315A (ja) 2004-02-05 2005-08-18 Sony Corp 不揮発性メモリ制御方法および装置
US7725628B1 (en) 2004-04-20 2010-05-25 Lexar Media, Inc. Direct secondary device interface by a host
US7370166B1 (en) 2004-04-30 2008-05-06 Lexar Media, Inc. Secure portable storage device
US7594063B1 (en) 2004-08-27 2009-09-22 Lexar Media, Inc. Storage capacity status
US7464306B1 (en) 2004-08-27 2008-12-09 Lexar Media, Inc. Status of overall health of nonvolatile memory
KR100621631B1 (ko) * 2005-01-11 2006-09-13 삼성전자주식회사 반도체 디스크 제어 장치
US7509471B2 (en) * 2005-10-27 2009-03-24 Sandisk Corporation Methods for adaptively handling data writes in non-volatile memories
US7631162B2 (en) 2005-10-27 2009-12-08 Sandisck Corporation Non-volatile memory with adaptive handling of data writes
US8069318B2 (en) * 2005-12-01 2011-11-29 Urenschi Assets Limited Liability Company High performance data rate system for flash devices
US7606992B1 (en) * 2005-12-01 2009-10-20 Chris Karabatsos High performance data rate system for flash devices
JP4633802B2 (ja) * 2005-12-09 2011-02-16 パナソニック株式会社 不揮発性記憶装置及びデータ読み出し方法及び管理テーブル作成方法
US7739576B2 (en) 2006-08-31 2010-06-15 Micron Technology, Inc. Variable strength ECC
KR100868674B1 (ko) 2006-10-30 2008-11-13 한국과학기술원 플래시메모리 관리방법
US9495241B2 (en) 2006-12-06 2016-11-15 Longitude Enterprise Flash S.A.R.L. Systems and methods for adaptive data storage
US9734086B2 (en) 2006-12-06 2017-08-15 Sandisk Technologies Llc Apparatus, system, and method for a device shared between multiple independent hosts
US8706968B2 (en) * 2007-12-06 2014-04-22 Fusion-Io, Inc. Apparatus, system, and method for redundant write caching
US8489817B2 (en) 2007-12-06 2013-07-16 Fusion-Io, Inc. Apparatus, system, and method for caching data
US8443134B2 (en) * 2006-12-06 2013-05-14 Fusion-Io, Inc. Apparatus, system, and method for graceful cache device degradation
US9104599B2 (en) 2007-12-06 2015-08-11 Intelligent Intellectual Property Holdings 2 Llc Apparatus, system, and method for destaging cached data
US9116823B2 (en) 2006-12-06 2015-08-25 Intelligent Intellectual Property Holdings 2 Llc Systems and methods for adaptive error-correction coding
US8122322B2 (en) 2007-07-31 2012-02-21 Seagate Technology Llc System and method of storing reliability data
US7836226B2 (en) 2007-12-06 2010-11-16 Fusion-Io, Inc. Apparatus, system, and method for coordinating storage requests in a multi-processor/multi-thread environment
US8316277B2 (en) * 2007-12-06 2012-11-20 Fusion-Io, Inc. Apparatus, system, and method for ensuring data validity in a data storage process
US9519540B2 (en) 2007-12-06 2016-12-13 Sandisk Technologies Llc Apparatus, system, and method for destaging cached data
US7966445B2 (en) * 2007-12-24 2011-06-21 Telefonaktiebolaget L M Ericsson (Publ) Read status controller
US7979264B2 (en) * 2008-02-26 2011-07-12 Streaming Networks (Pvt) Ltd System and method for interfacing a media processing apparatus with a computer
US8180995B2 (en) 2009-01-21 2012-05-15 Micron Technology, Inc. Logical address offset in response to detecting a memory formatting operation
US8095765B2 (en) * 2009-03-04 2012-01-10 Micron Technology, Inc. Memory block management
US8239614B2 (en) 2009-03-04 2012-08-07 Micron Technology, Inc. Memory super block allocation
KR101717644B1 (ko) 2009-09-08 2017-03-27 샌디스크 테크놀로지스 엘엘씨 고체-상태 저장 디바이스 상에서 데이터를 캐싱하는 장치, 시스템, 및 방법
KR101796116B1 (ko) 2010-10-20 2017-11-10 삼성전자 주식회사 반도체 장치, 이를 포함하는 메모리 모듈, 메모리 시스템 및 그 동작방법
US8966184B2 (en) 2011-01-31 2015-02-24 Intelligent Intellectual Property Holdings 2, LLC. Apparatus, system, and method for managing eviction of data
US8874823B2 (en) 2011-02-15 2014-10-28 Intellectual Property Holdings 2 Llc Systems and methods for managing data input/output operations
US9201677B2 (en) 2011-05-23 2015-12-01 Intelligent Intellectual Property Holdings 2 Llc Managing data input/output operations
US9003104B2 (en) 2011-02-15 2015-04-07 Intelligent Intellectual Property Holdings 2 Llc Systems and methods for a file-level cache
WO2012116369A2 (en) 2011-02-25 2012-08-30 Fusion-Io, Inc. Apparatus, system, and method for managing contents of a cache
US9251052B2 (en) 2012-01-12 2016-02-02 Intelligent Intellectual Property Holdings 2 Llc Systems and methods for profiling a non-volatile cache having a logical-to-physical translation layer
US10102117B2 (en) 2012-01-12 2018-10-16 Sandisk Technologies Llc Systems and methods for cache and storage device coordination
US9767032B2 (en) 2012-01-12 2017-09-19 Sandisk Technologies Llc Systems and methods for cache endurance
US9251086B2 (en) 2012-01-24 2016-02-02 SanDisk Technologies, Inc. Apparatus, system, and method for managing a cache
US9116812B2 (en) 2012-01-27 2015-08-25 Intelligent Intellectual Property Holdings 2 Llc Systems and methods for a de-duplication cache
US10019353B2 (en) 2012-03-02 2018-07-10 Longitude Enterprise Flash S.A.R.L. Systems and methods for referencing data on a storage medium
US9612966B2 (en) 2012-07-03 2017-04-04 Sandisk Technologies Llc Systems, methods and apparatus for a virtual machine cache
US10339056B2 (en) 2012-07-03 2019-07-02 Sandisk Technologies Llc Systems, methods and apparatus for cache transfers
US10346095B2 (en) 2012-08-31 2019-07-09 Sandisk Technologies, Llc Systems, methods, and interfaces for adaptive cache persistence
US9842053B2 (en) 2013-03-15 2017-12-12 Sandisk Technologies Llc Systems and methods for persistent cache logging
US10114562B2 (en) 2014-09-16 2018-10-30 Sandisk Technologies Llc Adaptive block allocation in nonvolatile memory
US9817593B1 (en) 2016-07-11 2017-11-14 Sandisk Technologies Llc Block management in non-volatile memory system with non-blocking control sync system
JP7528012B2 (ja) * 2021-03-23 2024-08-05 キオクシア株式会社 メモリコントローラおよびメモリシステム

Family Cites Families (91)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4210959A (en) * 1978-05-10 1980-07-01 Apple Computer, Inc. Controller for magnetic disc, recorder, or the like
FR2426938A1 (fr) * 1978-05-26 1979-12-21 Cii Honeywell Bull Dispositif de detection de secteurs defectueux et d'allocation de secteurs de remplacement dans une memoire a disques
US4355376A (en) * 1980-09-30 1982-10-19 Burroughs Corporation Apparatus and method for utilizing partially defective memory devices
JPS5764383A (en) * 1980-10-03 1982-04-19 Toshiba Corp Address converting method and its device
JPS57132256A (en) * 1981-02-09 1982-08-16 Sony Corp Memory device
JPS5877034A (ja) * 1981-10-30 1983-05-10 Hitachi Ltd 記録方法
US4450559A (en) * 1981-12-24 1984-05-22 International Business Machines Corporation Memory system with selective assignment of spare locations
JPS58215795A (ja) * 1982-06-08 1983-12-15 Toshiba Corp 不揮発性メモリ装置
JPS58215794A (ja) * 1982-06-08 1983-12-15 Toshiba Corp 不揮発性メモリ装置
US4498146A (en) * 1982-07-30 1985-02-05 At&T Bell Laboratories Management of defects in storage media
JPS5945695A (ja) * 1982-09-07 1984-03-14 Fujitsu Ltd Icメモリ
US4710871A (en) * 1982-11-01 1987-12-01 Ncr Corporation Data transmitting and receiving apparatus
AU557723B2 (en) * 1982-12-17 1987-01-08 Blue Circle Southern Cement Ltd. Electronic memory system
JPS59162695A (ja) * 1983-03-07 1984-09-13 Nec Corp 記憶装置
US4896262A (en) * 1984-02-24 1990-01-23 Kabushiki Kaisha Meidensha Emulation device for converting magnetic disc memory mode signal from computer into semiconductor memory access mode signal for semiconductor memory
JPS60212900A (ja) * 1984-04-09 1985-10-25 Nec Corp 半導体固定記憶装置
JPS6196598A (ja) * 1984-10-17 1986-05-15 Fuji Electric Co Ltd 電気的消去可能なp−romのカウントデ−タ記憶方法
US4654847A (en) * 1984-12-28 1987-03-31 International Business Machines Apparatus for automatically correcting erroneous data and for storing the corrected data in a common pool alternate memory array
JPS61208673A (ja) * 1985-03-12 1986-09-17 Matsushita Electric Ind Co Ltd 情報記録再生装置
US4744062A (en) * 1985-04-23 1988-05-10 Hitachi, Ltd. Semiconductor integrated circuit with nonvolatile memory
JPS62102482A (ja) * 1985-10-28 1987-05-12 Matsushita Electric Ind Co Ltd 情報記録再生装置
JP2664137B2 (ja) * 1985-10-29 1997-10-15 凸版印刷株式会社 Icカード
US4800520A (en) * 1985-10-29 1989-01-24 Kabushiki Kaisha Toshiba Portable electronic device with garbage collection function
US4746998A (en) * 1985-11-20 1988-05-24 Seagate Technology, Inc. Method for mapping around defective sectors in a disc drive
US4924331A (en) * 1985-11-20 1990-05-08 Seagate Technology, Inc. Method for mapping around defective sectors in a disc drive
US4757474A (en) * 1986-01-28 1988-07-12 Fujitsu Limited Semiconductor memory device having redundancy circuit portion
JP2685173B2 (ja) * 1986-05-31 1997-12-03 キヤノン株式会社 メモリ書き込み制御方法
JPH07109717B2 (ja) * 1986-05-31 1995-11-22 キヤノン株式会社 メモリ書き込み制御方法
US4953122A (en) * 1986-10-31 1990-08-28 Laserdrive Ltd. Pseudo-erasable and rewritable write-once optical disk memory system
JPS63183700A (ja) * 1987-01-26 1988-07-29 Mitsubishi Electric Corp Eepromアクセス方法
US5268870A (en) * 1988-06-08 1993-12-07 Eliyahou Harari Flash EEPROM system and intelligent programming and erasing methods therefor
US5293560A (en) * 1988-06-08 1994-03-08 Eliyahou Harari Multi-state flash EEPROM system using incremental programing and erasing methods
US5268319A (en) * 1988-06-08 1993-12-07 Eliyahou Harari Highly compact EPROM and flash EEPROM devices
US5198380A (en) * 1988-06-08 1993-03-30 Sundisk Corporation Method of highly compact EPROM and flash EEPROM devices
US5168465A (en) * 1988-06-08 1992-12-01 Eliyahou Harari Highly compact EPROM and flash EEPROM devices
US5268318A (en) * 1988-06-08 1993-12-07 Eliyahou Harari Highly compact EPROM and flash EEPROM devices
US4914529A (en) * 1988-07-18 1990-04-03 Western Digital Corp. Data disk defect handling using relocation ID fields
US5070474A (en) * 1988-07-26 1991-12-03 Disk Emulation Systems, Inc. Disk emulation system
DE69024086T2 (de) * 1989-04-13 1996-06-20 Sundisk Corp EEprom-System mit Blocklöschung
US5535328A (en) * 1989-04-13 1996-07-09 Sandisk Corporation Non-volatile memory system card with flash erasable sectors of EEprom cells including a mechanism for substituting defective cells
US5226168A (en) * 1989-04-25 1993-07-06 Seiko Epson Corporation Semiconductor memory configured to emulate floppy and hard disk magnetic storage based upon a determined storage capacity of the semiconductor memory
US5200959A (en) * 1989-10-17 1993-04-06 Sundisk Corporation Device and method for defect handling in semi-conductor memory
US5303198A (en) * 1990-09-28 1994-04-12 Fuji Photo Film Co., Ltd. Method of recording data in memory card having EEPROM and memory card system using the same
EP0489204B1 (de) * 1990-12-04 1995-08-16 Hewlett-Packard Limited Wiederprogrammierbare Datenspeicherungsanlage
GB2251324B (en) * 1990-12-31 1995-05-10 Intel Corp File structure for a non-volatile semiconductor memory
US5396468A (en) * 1991-03-15 1995-03-07 Sundisk Corporation Streamlined write operation for EEPROM system
US5504760A (en) * 1991-03-15 1996-04-02 Sandisk Corporation Mixed data encoding EEPROM system
US5270979A (en) * 1991-03-15 1993-12-14 Sundisk Corporation Method for optimum erasing of EEPROM
US5663901A (en) * 1991-04-11 1997-09-02 Sandisk Corporation Computer memory cards using flash EEPROM integrated circuit chips and memory-controller systems
JPH04332999A (ja) * 1991-05-07 1992-11-19 Hitachi Koki Co Ltd メモリの使用方法
JP2582487B2 (ja) * 1991-07-12 1997-02-19 インターナショナル・ビジネス・マシーンズ・コーポレイション 半導体メモリを用いた外部記憶システム及びその制御方法
US5430859A (en) * 1991-07-26 1995-07-04 Sundisk Corporation Solid state memory system including plural memory chips and a serialized bus
GB9116480D0 (en) * 1991-07-30 1991-09-11 Inmos Ltd Read and write circuitry for a memory
GB9116493D0 (en) * 1991-07-30 1991-09-11 Inmos Ltd Read and write circuitry for a memory
US5438573A (en) * 1991-09-13 1995-08-01 Sundisk Corporation Flash EEPROM array data and header file structure
US5778418A (en) * 1991-09-27 1998-07-07 Sandisk Corporation Mass computer storage system having both solid state and rotating disk types of memory
TW261687B (de) * 1991-11-26 1995-11-01 Hitachi Seisakusyo Kk
JPH05151097A (ja) * 1991-11-28 1993-06-18 Fujitsu Ltd 書換回数制限型メモリのデータ管理方式
JPH05233426A (ja) * 1992-02-20 1993-09-10 Fujitsu Ltd フラッシュ・メモリ使用方法
US5532962A (en) * 1992-05-20 1996-07-02 Sandisk Corporation Soft errors handling in EEPROM devices
US5315541A (en) * 1992-07-24 1994-05-24 Sundisk Corporation Segmented column memory array
US5428621A (en) * 1992-09-21 1995-06-27 Sundisk Corporation Latent defect handling in EEPROM devices
JP3641280B2 (ja) * 1992-10-30 2005-04-20 インテル・コーポレーション フラッシュeepromアレイのクリーン・アップすべきブロックを決定する方法
US5337275A (en) * 1992-10-30 1994-08-09 Intel Corporation Method for releasing space in flash EEPROM memory array to allow the storage of compressed data
US5357475A (en) * 1992-10-30 1994-10-18 Intel Corporation Method for detaching sectors in a flash EEPROM memory array
US5341330A (en) * 1992-10-30 1994-08-23 Intel Corporation Method for writing to a flash memory array during erase suspend intervals
US5485595A (en) * 1993-03-26 1996-01-16 Cirrus Logic, Inc. Flash memory mass storage architecture incorporating wear leveling technique without using cam cells
US5388083A (en) * 1993-03-26 1995-02-07 Cirrus Logic, Inc. Flash memory mass storage architecture
US5479638A (en) * 1993-03-26 1995-12-26 Cirrus Logic, Inc. Flash memory mass storage architecture incorporation wear leveling technique
JPH06332806A (ja) * 1993-05-25 1994-12-02 Hitachi Ltd フラッシュメモリを記憶媒体とする記憶システムおよびその制御方法
JPH0714392A (ja) * 1993-06-14 1995-01-17 Toshiba Corp 不揮発性半導体メモリおよびそれを使用した半導体ディスク装置
US5519847A (en) * 1993-06-30 1996-05-21 Intel Corporation Method of pipelining sequential writes in a flash memory
US5353256A (en) * 1993-06-30 1994-10-04 Intel Corporation Block specific status information in a memory device
US5422842A (en) * 1993-07-08 1995-06-06 Sundisk Corporation Method and circuit for simultaneously programming and verifying the programming of selected EEPROM cells
US5566314A (en) * 1993-08-30 1996-10-15 Lucent Technologies Inc. Flash memory device employing unused cell arrays to update files
JPH07141258A (ja) * 1993-11-15 1995-06-02 Toshiba Corp データ記録再生装置
US5661053A (en) * 1994-05-25 1997-08-26 Sandisk Corporation Method of making dense flash EEPROM cell array and peripheral supporting circuits formed in deposited field oxide with the use of spacers
JPH07302176A (ja) * 1994-05-09 1995-11-14 Toshiba Corp 半導体ディスク装置
US5508971A (en) * 1994-10-17 1996-04-16 Sandisk Corporation Programmable power generation circuit for flash EEPROM memory systems
JP3059349B2 (ja) * 1994-12-19 2000-07-04 シャープ株式会社 Icカード、及びフラッシュメモリの並列処理方法
US6081878A (en) * 1997-03-31 2000-06-27 Lexar Media, Inc. Increasing the memory performance of flash memory devices by writing sectors simultaneously to multiple flash memory devices
US6091666A (en) * 1996-10-04 2000-07-18 Sony Corporation Nonvolatile flash memory with fast data programming operation
JP3586993B2 (ja) * 1996-10-04 2004-11-10 ソニー株式会社 半導体不揮発性記憶装置
JPH10228765A (ja) * 1996-10-31 1998-08-25 Sony Corp 半導体記憶装置
US6047352A (en) * 1996-10-29 2000-04-04 Micron Technology, Inc. Memory system, method and predecoding circuit operable in different modes for selectively accessing multiple blocks of memory cells for simultaneous writing or erasure
JP3159105B2 (ja) * 1997-02-21 2001-04-23 日本電気株式会社 不揮発性半導体記憶装置及びその書込方法
US5822245A (en) * 1997-03-26 1998-10-13 Atmel Corporation Dual buffer flash memory architecture with multiple operating modes
US5822244A (en) * 1997-09-24 1998-10-13 Motorola, Inc. Method and apparatus for suspending a program/erase operation in a flash memory
JP3550293B2 (ja) * 1997-12-26 2004-08-04 株式会社ルネサステクノロジ 不揮発性メモリを用いた高速書換可能な記憶装置および該記憶装置のデータ書換方法
US6032248A (en) * 1998-04-29 2000-02-29 Atmel Corporation Microcontroller including a single memory module having a data memory sector and a code memory sector and supporting simultaneous read/write access to both sectors
WO2000030116A1 (en) * 1998-11-17 2000-05-25 Lexar Media, Inc. Method and apparatus for memory control circuit

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DE60040484D1 (de) 2008-11-20
US6141249A (en) 2000-10-31
AU6942100A (en) 2001-04-10
EP1242868A1 (de) 2002-09-25
JP2010152913A (ja) 2010-07-08
EP1242868B1 (de) 2008-10-08
EP1242868A4 (de) 2005-06-15
JP2003508861A (ja) 2003-03-04
WO2001018640A1 (en) 2001-03-15

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