ATE413605T1 - Verfahren und vorrichtung zum testen elektrischer eigenschaften eines zu prüfenden objekts - Google Patents

Verfahren und vorrichtung zum testen elektrischer eigenschaften eines zu prüfenden objekts

Info

Publication number
ATE413605T1
ATE413605T1 AT07004065T AT07004065T ATE413605T1 AT E413605 T1 ATE413605 T1 AT E413605T1 AT 07004065 T AT07004065 T AT 07004065T AT 07004065 T AT07004065 T AT 07004065T AT E413605 T1 ATE413605 T1 AT E413605T1
Authority
AT
Austria
Prior art keywords
test
electrical properties
testing electrical
testing
electrode
Prior art date
Application number
AT07004065T
Other languages
English (en)
Inventor
Tadatomo Suga
Toshihiro Itoh
Shigekazu Komatsu
Kenichi Kataoka
Original Assignee
Tokyo Electron Ltd
Tadatomo Suga
Toshihiro Itoh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd, Tadatomo Suga, Toshihiro Itoh filed Critical Tokyo Electron Ltd
Application granted granted Critical
Publication of ATE413605T1 publication Critical patent/ATE413605T1/de

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/073—Multiple probes
    • G01R1/07307—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
    • G01R1/07357—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card with flexible bodies, e.g. buckling beams
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2886—Features relating to contacting the IC under test, e.g. probe heads; chucks
    • G01R31/2887—Features relating to contacting the IC under test, e.g. probe heads; chucks involving moving the probe head or the IC under test; docking stations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Engineering & Computer Science (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Investigating Strength Of Materials By Application Of Mechanical Stress (AREA)
  • Testing Electric Properties And Detecting Electric Faults (AREA)
AT07004065T 2003-06-09 2004-06-08 Verfahren und vorrichtung zum testen elektrischer eigenschaften eines zu prüfenden objekts ATE413605T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003164349A JP4387125B2 (ja) 2003-06-09 2003-06-09 検査方法及び検査装置

Publications (1)

Publication Number Publication Date
ATE413605T1 true ATE413605T1 (de) 2008-11-15

Family

ID=33508784

Family Applications (2)

Application Number Title Priority Date Filing Date
AT07004065T ATE413605T1 (de) 2003-06-09 2004-06-08 Verfahren und vorrichtung zum testen elektrischer eigenschaften eines zu prüfenden objekts
AT04745857T ATE378607T1 (de) 2003-06-09 2004-06-08 Verfahren und vorrichtung zum testen elektrischer eigenschaften eines zu prüfenden objekts

Family Applications After (1)

Application Number Title Priority Date Filing Date
AT04745857T ATE378607T1 (de) 2003-06-09 2004-06-08 Verfahren und vorrichtung zum testen elektrischer eigenschaften eines zu prüfenden objekts

Country Status (8)

Country Link
US (3) US7262613B2 (de)
EP (2) EP1637893B1 (de)
JP (1) JP4387125B2 (de)
KR (1) KR100810550B1 (de)
CN (1) CN100442068C (de)
AT (2) ATE413605T1 (de)
DE (2) DE602004010116T2 (de)
WO (1) WO2004109306A1 (de)

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WO2006080461A1 (ja) 2005-01-28 2006-08-03 Matsushita Electric Industrial Co., Ltd. 再生装置、プログラム、再生方法
EP1870714A4 (de) * 2005-03-31 2010-05-19 Octec Inc Mikrostruktur-sondenkarte und mikrostruktur-untersuchungseinrichtung, verfahren und computerprogramm
JP2006319209A (ja) * 2005-05-13 2006-11-24 Tokyo Electron Ltd パワーデバイス用の検査装置
JP5108238B2 (ja) * 2006-02-24 2012-12-26 東京エレクトロン株式会社 検査方法、検査装置及び制御プログラム
JP5016892B2 (ja) * 2006-10-17 2012-09-05 東京エレクトロン株式会社 検査装置及び検査方法
JP2008157818A (ja) * 2006-12-25 2008-07-10 Tokyo Electron Ltd 検査方法、検査装置及びプログラムを記憶したコンピュータ読み取り可能な記憶媒体
JP5020261B2 (ja) * 2006-12-27 2012-09-05 東京エレクトロン株式会社 検査方法、検査装置及びプログラムを記憶したコンピュータ読み取り可能な記憶媒体
JP4664334B2 (ja) * 2007-07-20 2011-04-06 東京エレクトロン株式会社 検査方法
JP4991495B2 (ja) * 2007-11-26 2012-08-01 東京エレクトロン株式会社 検査用保持部材及び検査用保持部材の製造方法
TWI362496B (en) * 2008-03-05 2012-04-21 Nanya Technology Corp Apparatus for testing chip and circuit of probe card
US8344746B2 (en) * 2008-09-29 2013-01-01 Thermo Fisher Scientific Inc. Probe interface for electrostatic discharge testing of an integrated circuit
CN101696992B (zh) * 2009-10-28 2013-03-27 上海宏力半导体制造有限公司 双极型晶体管的基区电阻的测量方法
JP5296117B2 (ja) * 2010-03-12 2013-09-25 東京エレクトロン株式会社 プローブ装置
US8620724B2 (en) * 2010-04-20 2013-12-31 Accenture Global Services Limited Integration framework for enterprise content management systems
JP5291157B2 (ja) * 2011-08-01 2013-09-18 東京エレクトロン株式会社 パワーデバイス用のプローブカード
JP5265746B2 (ja) * 2011-09-22 2013-08-14 東京エレクトロン株式会社 プローブ装置
CN103091514A (zh) * 2011-10-27 2013-05-08 无锡华润上华科技有限公司 手动探针台结构
WO2013108452A1 (ja) * 2012-01-20 2013-07-25 東京エレクトロン株式会社 支持基板及び基板の処理方法
JP2014107469A (ja) * 2012-11-29 2014-06-09 Tokyo Electron Ltd 半導体装置の製造方法及び製造装置
EP2838107B1 (de) 2013-08-14 2016-06-01 Fei Company Schaltungssonde für ladungsträgerstrahlsystem
JP6386923B2 (ja) * 2015-01-26 2018-09-05 三菱電機株式会社 半導体評価装置およびチャックステージの検査方法
JP6809049B2 (ja) * 2016-08-31 2021-01-06 日亜化学工業株式会社 発光装置の検査方法
JP7497629B2 (ja) * 2020-07-03 2024-06-11 富士電機株式会社 半導体チップの試験装置および試験方法

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GB8305967D0 (en) * 1983-03-04 1983-04-07 Univ Liverpool Material for treatment of spontaneous abortions
JPH0727951B2 (ja) 1987-04-15 1995-03-29 東京エレクトロン株式会社 ウエハ載置台
JPH02166746A (ja) 1988-12-21 1990-06-27 Tokyo Electron Ltd 測定装置
JP3208734B2 (ja) * 1990-08-20 2001-09-17 東京エレクトロン株式会社 プローブ装置
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US5557215A (en) * 1993-05-12 1996-09-17 Tokyo Electron Limited Self-bias measuring method, apparatus thereof and electrostatic chucking apparatus
JPH1164385A (ja) 1997-08-21 1999-03-05 Hitachi Electron Eng Co Ltd 検査用基板のプローブ
JP3642456B2 (ja) * 1998-02-24 2005-04-27 株式会社村田製作所 電子部品の検査方法および装置
CN1173665C (zh) * 1998-07-06 2004-11-03 亚历山大·帕斯特尔 估算皮肤阻抗变化的装置
JP2000164665A (ja) 1998-11-27 2000-06-16 Miyazaki Oki Electric Co Ltd 半導体集積回路装置及びその製造方法
US6492827B1 (en) * 1999-10-19 2002-12-10 Solid State Measurements, Inc. Non-invasive electrical measurement of semiconductor wafers
JP4841737B2 (ja) * 2000-08-21 2011-12-21 東京エレクトロン株式会社 検査方法及び検査装置
JP2002176142A (ja) * 2000-12-07 2002-06-21 Sanyo Electric Co Ltd 半導体装置の製造方法
JP4456325B2 (ja) * 2002-12-12 2010-04-28 東京エレクトロン株式会社 検査方法及び検査装置

Also Published As

Publication number Publication date
US7688088B2 (en) 2010-03-30
US20080174325A1 (en) 2008-07-24
EP1637893A4 (de) 2006-07-19
DE602004017655D1 (de) 2008-12-18
EP1637893B1 (de) 2007-11-14
EP1788401B1 (de) 2008-11-05
ATE378607T1 (de) 2007-11-15
CN1809757A (zh) 2006-07-26
DE602004010116D1 (de) 2007-12-27
WO2004109306A1 (ja) 2004-12-16
JP2005005331A (ja) 2005-01-06
CN100442068C (zh) 2008-12-10
US20060145716A1 (en) 2006-07-06
DE602004010116T2 (de) 2008-09-11
US7262613B2 (en) 2007-08-28
JP4387125B2 (ja) 2009-12-16
KR20060119719A (ko) 2006-11-24
EP1788401A1 (de) 2007-05-23
US20070063725A1 (en) 2007-03-22
EP1637893A1 (de) 2006-03-22
KR100810550B1 (ko) 2008-03-18

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