MA31786B1 - Station d'essai permettant de tester un courant de fuite à travers le boîtier isolant de composants électroniques de puissance, et procédé correspondant - Google Patents

Station d'essai permettant de tester un courant de fuite à travers le boîtier isolant de composants électroniques de puissance, et procédé correspondant

Info

Publication number
MA31786B1
MA31786B1 MA32787A MA32787A MA31786B1 MA 31786 B1 MA31786 B1 MA 31786B1 MA 32787 A MA32787 A MA 32787A MA 32787 A MA32787 A MA 32787A MA 31786 B1 MA31786 B1 MA 31786B1
Authority
MA
Morocco
Prior art keywords
test station
leakage current
testing
insulating box
electronic power
Prior art date
Application number
MA32787A
Other languages
Arabic (ar)
English (en)
Inventor
Davy Cretenet
Michel Charpie
Original Assignee
Ismeca Semiconductor Holding
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ismeca Semiconductor Holding filed Critical Ismeca Semiconductor Holding
Publication of MA31786B1 publication Critical patent/MA31786B1/fr

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/12—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing
    • G01R31/1227—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing of components, parts or materials
    • G01R31/1263—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing of components, parts or materials of solid or fluid materials, e.g. insulation films, bulk material; of semiconductors or LV electronic components or parts; of cable, line or wire insulation
    • G01R31/129—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing of components, parts or materials of solid or fluid materials, e.g. insulation films, bulk material; of semiconductors or LV electronic components or parts; of cable, line or wire insulation of components or parts made of semiconducting materials; of LV components or parts
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/50—Testing of electric apparatus, lines, cables or components for short-circuits, continuity, leakage current or incorrect line connections
    • G01R31/52—Testing for short-circuits, leakage current or ground faults
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/263—Circuits therefor for testing thyristors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2642—Testing semiconductor operation lifetime or reliability, e.g. by accelerated life tests
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2896—Testing of IC packages; Test features related to IC packages

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Testing Electric Properties And Detecting Electric Faults (AREA)

Abstract

L'invention porte sur une station d'essai (6) permettant de tester un courant de fuite à travers le boîtier isolant (42) de composants électroniques de puissance (3), ladite station d'essai comprenant : des premières parties de contact (36) pour appliquer une première tension d'essai sur une ou plusieurs broches (40) desdits composants testés, des secondes parties de contact (24, 37, 370, 25, 26) pour appliquer une seconde tension d'essai sur plusieurs faces externes dudit boîtier isolant desdits composants testés. La station d'essai est caractérisée par le fait que lesdites secondes parties de contact sont agencées pour entrer en contact avec plusieurs faces mutuellement orthogonales desdits composants électroniques de puissance (3).
MA32787A 2007-10-30 2010-04-23 Station d'essai permettant de tester un courant de fuite à travers le boîtier isolant de composants électroniques de puissance, et procédé correspondant MA31786B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP07119668A EP2056117B1 (fr) 2007-10-30 2007-10-30 Station de test pour tester le courant de fuite dans l'emballage isolant des composants électroniques d'alimentation, et procédé correspondant
PCT/EP2008/064752 WO2009056610A1 (fr) 2007-10-30 2008-10-30 Station d'essai permettant de tester un courant de fuite à travers le boîtier isolant de composants électroniques de puissance, et procédé correspondant

Publications (1)

Publication Number Publication Date
MA31786B1 true MA31786B1 (fr) 2010-10-01

Family

ID=39149226

Family Applications (1)

Application Number Title Priority Date Filing Date
MA32787A MA31786B1 (fr) 2007-10-30 2010-04-23 Station d'essai permettant de tester un courant de fuite à travers le boîtier isolant de composants électroniques de puissance, et procédé correspondant

Country Status (8)

Country Link
EP (1) EP2056117B1 (fr)
CN (1) CN101868732A (fr)
AT (1) ATE473451T1 (fr)
DE (1) DE602007007629D1 (fr)
MA (1) MA31786B1 (fr)
MY (1) MY152349A (fr)
TW (1) TW200928388A (fr)
WO (1) WO2009056610A1 (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011018650B4 (de) 2010-04-22 2015-05-07 Elowerk Gmbh & Co.Kg Verfahren zum Testen eines elektrischen Bauelementes und Verwendung
JP5817361B2 (ja) * 2011-09-08 2015-11-18 富士電機株式会社 半導体素子の特性試験装置およびその装置を用いた半導体素子の特性試験方法
CN103163361B (zh) * 2011-12-13 2015-10-21 英业达股份有限公司 电子元件与检测系统的组合与电子元件的检测方法
KR101979713B1 (ko) * 2012-11-12 2019-05-17 삼성전자 주식회사 반도체 장치의 테스트 방법 및 반도체 테스트 장비
CN104502823A (zh) * 2015-01-04 2015-04-08 无锡罗姆半导体科技有限公司 双台面结构双向可控硅封装的测试方法
KR102228290B1 (ko) * 2017-03-09 2021-03-17 이스메카 세미컨덕터 홀딩 에스.아. 전기부품을 테스트하기 위한 테스트 어셈블리 및 방법
CN109116208A (zh) * 2018-06-28 2019-01-01 武汉钢铁有限公司 一种电力模块的快速检测装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6073375A (ja) * 1983-09-30 1985-04-25 Oki Electric Ind Co Ltd 半導体装置の試験方法
US4806857A (en) * 1986-04-11 1989-02-21 Oki Electric Industry Co., Ltd. Apparatus for testing semiconductor devices
JPH0769385B2 (ja) * 1986-05-09 1995-07-31 沖電気工業株式会社 半導体装置の試験方法及びその装置

Also Published As

Publication number Publication date
DE602007007629D1 (de) 2010-08-19
EP2056117A1 (fr) 2009-05-06
MY152349A (en) 2014-09-15
TW200928388A (en) 2009-07-01
WO2009056610A1 (fr) 2009-05-07
ATE473451T1 (de) 2010-07-15
CN101868732A (zh) 2010-10-20
EP2056117B1 (fr) 2010-07-07

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