ATE415646T1 - Methode und apparat für immersionslithographie - Google Patents
Methode und apparat für immersionslithographieInfo
- Publication number
- ATE415646T1 ATE415646T1 AT05447154T AT05447154T ATE415646T1 AT E415646 T1 ATE415646 T1 AT E415646T1 AT 05447154 T AT05447154 T AT 05447154T AT 05447154 T AT05447154 T AT 05447154T AT E415646 T1 ATE415646 T1 AT E415646T1
- Authority
- AT
- Austria
- Prior art keywords
- immersion liquid
- immersion
- substrate
- tensio
- surface tension
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 3
- 238000000671 immersion lithography Methods 0.000 title abstract 2
- 238000007654 immersion Methods 0.000 abstract 8
- 239000007788 liquid Substances 0.000 abstract 6
- 239000000758 substrate Substances 0.000 abstract 4
- 230000003287 optical effect Effects 0.000 abstract 2
- 239000000126 substance Substances 0.000 abstract 2
- 239000000203 mixture Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US58454104P | 2004-07-01 | 2004-07-01 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE415646T1 true ATE415646T1 (de) | 2008-12-15 |
Family
ID=34978684
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT05447154T ATE415646T1 (de) | 2004-07-01 | 2005-06-30 | Methode und apparat für immersionslithographie |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7224433B2 (de) |
| EP (1) | EP1612609B1 (de) |
| JP (1) | JP4809638B2 (de) |
| AT (1) | ATE415646T1 (de) |
| DE (1) | DE602005011204D1 (de) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040031167A1 (en) | 2002-06-13 | 2004-02-19 | Stein Nathan D. | Single wafer method and apparatus for drying semiconductor substrates using an inert gas air-knife |
| US20060001851A1 (en) * | 2004-07-01 | 2006-01-05 | Grant Robert B | Immersion photolithography system |
| EP2018597A1 (de) * | 2006-05-17 | 2009-01-28 | Micronic Laser Systems Ab | Prozess zur immersionsbelichtung eines substrats |
| JP4368365B2 (ja) | 2006-08-02 | 2009-11-18 | Tdk株式会社 | 液浸露光用基板およびその製造方法、ならびに液浸露光方法 |
| JP2009188241A (ja) * | 2008-02-07 | 2009-08-20 | Toshiba Corp | 液浸露光装置及び液浸露光方法 |
| NL2005666A (en) | 2009-12-18 | 2011-06-21 | Asml Netherlands Bv | A lithographic apparatus and a device manufacturing method. |
| NL2007182A (en) | 2010-08-23 | 2012-02-27 | Asml Netherlands Bv | Fluid handling structure, module for an immersion lithographic apparatus, lithographic apparatus and device manufacturing method. |
| JP2017538159A (ja) | 2014-12-19 | 2017-12-21 | エーエスエムエル ネザーランズ ビー.ブイ. | 流体取扱構造、リソグラフィ装置及びデバイス製造方法 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04305915A (ja) * | 1991-04-02 | 1992-10-28 | Nikon Corp | 密着型露光装置 |
| US5660642A (en) * | 1995-05-26 | 1997-08-26 | The Regents Of The University Of California | Moving zone Marangoni drying of wet objects using naturally evaporated solvent vapor |
| JP3747566B2 (ja) * | 1997-04-23 | 2006-02-22 | 株式会社ニコン | 液浸型露光装置 |
| US7367345B1 (en) * | 2002-09-30 | 2008-05-06 | Lam Research Corporation | Apparatus and method for providing a confined liquid for immersion lithography |
| US6788477B2 (en) * | 2002-10-22 | 2004-09-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus for method for immersion lithography |
| EP2495613B1 (de) * | 2002-11-12 | 2013-07-31 | ASML Netherlands B.V. | Lithografische Vorrichtung |
| KR100967835B1 (ko) * | 2002-12-13 | 2010-07-05 | 코닌클리케 필립스 일렉트로닉스 엔.브이. | 층상 스폿 조사 방법 및 장치에서의 액체 제거 |
| US6867844B2 (en) * | 2003-06-19 | 2005-03-15 | Asml Holding N.V. | Immersion photolithography system and method using microchannel nozzles |
-
2005
- 2005-06-30 JP JP2005191717A patent/JP4809638B2/ja not_active Expired - Fee Related
- 2005-06-30 DE DE602005011204T patent/DE602005011204D1/de not_active Expired - Lifetime
- 2005-06-30 EP EP05447154A patent/EP1612609B1/de not_active Ceased
- 2005-06-30 AT AT05447154T patent/ATE415646T1/de not_active IP Right Cessation
- 2005-07-01 US US11/174,103 patent/US7224433B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JP2006019742A (ja) | 2006-01-19 |
| EP1612609A3 (de) | 2006-05-10 |
| EP1612609A2 (de) | 2006-01-04 |
| EP1612609B1 (de) | 2008-11-26 |
| US7224433B2 (en) | 2007-05-29 |
| DE602005011204D1 (de) | 2009-01-08 |
| US20060000381A1 (en) | 2006-01-05 |
| JP4809638B2 (ja) | 2011-11-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |