ATE417361T1 - Leistungstransistor mit intern kombinierten tiefpass- und bandpass-anpassungsstufen - Google Patents

Leistungstransistor mit intern kombinierten tiefpass- und bandpass-anpassungsstufen

Info

Publication number
ATE417361T1
ATE417361T1 AT01273315T AT01273315T ATE417361T1 AT E417361 T1 ATE417361 T1 AT E417361T1 AT 01273315 T AT01273315 T AT 01273315T AT 01273315 T AT01273315 T AT 01273315T AT E417361 T1 ATE417361 T1 AT E417361T1
Authority
AT
Austria
Prior art keywords
power transistor
bandpass
pass
combined low
internally combined
Prior art date
Application number
AT01273315T
Other languages
English (en)
Inventor
Anton Roodnat
Original Assignee
Nxp Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nxp Bv filed Critical Nxp Bv
Application granted granted Critical
Publication of ATE417361T1 publication Critical patent/ATE417361T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
    • G03C1/00—Photosensitive materials
    • G03C1/005—Silver halide emulsions; Preparation thereof; Physical treatment thereof; Incorporation of additives therein
    • G03C1/06—Silver halide emulsions; Preparation thereof; Physical treatment thereof; Incorporation of additives therein with non-macromolecular additives
    • G03C1/08—Sensitivity-increasing substances
    • G03C1/10—Organic substances
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
    • G03C5/00—Photographic processes or agents therefor; Regeneration of such processing agents
    • G03C5/26—Processes using silver-salt-containing photosensitive materials or agents therefor
    • G03C5/29—Development processes or agents therefor
    • G03C5/30—Developers
    • G03C2005/3007—Ascorbic acid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H10W44/226—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF] for HF amplifiers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07551—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting
    • H10W72/07554—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting changes in dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H10W72/5473—Dispositions of multiple bond wires multiple bond wires connected to a common bond pad
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/753—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/759—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a laterally-adjacent discrete passive device

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Amplifiers (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Details Of Television Scanning (AREA)
AT01273315T 2001-01-18 2001-12-17 Leistungstransistor mit intern kombinierten tiefpass- und bandpass-anpassungsstufen ATE417361T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP01200168 2001-01-18

Publications (1)

Publication Number Publication Date
ATE417361T1 true ATE417361T1 (de) 2008-12-15

Family

ID=8179760

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01273315T ATE417361T1 (de) 2001-01-18 2001-12-17 Leistungstransistor mit intern kombinierten tiefpass- und bandpass-anpassungsstufen

Country Status (7)

Country Link
US (1) US6646321B2 (de)
EP (1) EP1356521B1 (de)
JP (1) JP4319407B2 (de)
KR (1) KR20020086645A (de)
AT (1) ATE417361T1 (de)
DE (1) DE60136961D1 (de)
WO (1) WO2002058149A1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7187249B2 (en) 2004-09-24 2007-03-06 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Interconnecting a port of a microwave circuit package and a microwave component mounted in the microwave circuit package
US7268627B2 (en) * 2004-11-03 2007-09-11 Theta Microelectronics, Inc. Pre-matching of distributed and push-pull power transistors
US7528062B2 (en) * 2006-10-25 2009-05-05 Freescale Semiconductor, Inc. Integrated matching network and method for manufacturing integrated matching networks
KR100878708B1 (ko) 2007-09-04 2009-01-14 알.에프 에이치아이씨 주식회사 고출력 반도체 소자 패키지 및 방법
KR100973751B1 (ko) * 2009-11-20 2010-08-04 리플래시기술 주식회사 수로교의 익스펜션 조인트 보수공법
US7986184B2 (en) 2009-12-18 2011-07-26 Nxp B.V. Radio frequency amplifier with effective decoupling
EP2388815A1 (de) 2010-05-10 2011-11-23 Nxp B.V. Transistorgehäuse
EP2458730B8 (de) 2010-11-29 2015-08-05 Nxp B.V. Hochfrequenzverstärker
EP2463905B1 (de) 2010-12-10 2014-10-01 Nxp B.V. Gekapselter HF Transistor mit speziellen Spannungsversorgungsanschlüssen
US9419580B2 (en) 2014-10-31 2016-08-16 Raytheon Company Output matching network having a single combined series and shunt capacitor component
JP6560287B2 (ja) * 2016-09-16 2019-08-14 株式会社東芝 マイクロ波半導体装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3969752A (en) * 1973-12-03 1976-07-13 Power Hybrids, Inc. Hybrid transistor
US4168507A (en) * 1977-11-21 1979-09-18 Motorola, Inc. Structure and technique for achieving reduced inductive effect of undesired components of common lead inductance in a semiconductive RF power package
US4200880A (en) * 1978-03-28 1980-04-29 Microwave Semiconductor Corp. Microwave transistor with distributed output shunt tuning
JP2728322B2 (ja) * 1991-09-05 1998-03-18 三菱電機株式会社 半導体装置
US5635751A (en) * 1991-09-05 1997-06-03 Mitsubishi Denki Kabushiki Kaisha High frequency transistor with reduced parasitic inductance
JP2864841B2 (ja) * 1992-02-04 1999-03-08 三菱電機株式会社 高周波高出力トランジスタ
US5315156A (en) * 1992-11-30 1994-05-24 Sgs-Thomson Microelectronics, Inc. Transistor device layout
EP0878025B1 (de) * 1996-11-05 2004-04-14 Koninklijke Philips Electronics N.V. Halbleitervorrichtung mit hochfrequenz-bipolar-transistor auf einem isolierenden substrat
US5880517A (en) * 1998-02-04 1999-03-09 Northrop Grumman Corporation Microwave power transistor having matched impedance with integrated DC blocking capacitor and manufacturing method therefor
US6194774B1 (en) * 1999-03-10 2001-02-27 Samsung Electronics Co., Ltd. Inductor including bonding wires
US6181200B1 (en) * 1999-04-09 2001-01-30 Integra Technologies, Inc. Radio frequency power device
JP2001111364A (ja) * 1999-10-12 2001-04-20 Nec Corp マイクロ波増幅器

Also Published As

Publication number Publication date
US6646321B2 (en) 2003-11-11
WO2002058149A1 (en) 2002-07-25
US20020109203A1 (en) 2002-08-15
JP2004523111A (ja) 2004-07-29
DE60136961D1 (de) 2009-01-22
KR20020086645A (ko) 2002-11-18
EP1356521A1 (de) 2003-10-29
JP4319407B2 (ja) 2009-08-26
EP1356521B1 (de) 2008-12-10

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