ATE423226T1 - Suszeptorsystem - Google Patents

Suszeptorsystem

Info

Publication number
ATE423226T1
ATE423226T1 AT02808223T AT02808223T ATE423226T1 AT E423226 T1 ATE423226 T1 AT E423226T1 AT 02808223 T AT02808223 T AT 02808223T AT 02808223 T AT02808223 T AT 02808223T AT E423226 T1 ATE423226 T1 AT E423226T1
Authority
AT
Austria
Prior art keywords
piece
constituted
hand side
wall
side wall
Prior art date
Application number
AT02808223T
Other languages
English (en)
Inventor
Giacomo Maccalli
Gianluca Valente
Olle Kordina
Franco Preti
Danilo Crippa
Original Assignee
E T C Epitaxial Technology Ct
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by E T C Epitaxial Technology Ct filed Critical E T C Epitaxial Technology Ct
Application granted granted Critical
Publication of ATE423226T1 publication Critical patent/ATE423226T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/14—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B14/00—Crucible or pot furnaces
    • F27B14/06—Crucible or pot furnaces heated electrically, e.g. induction crucible furnaces with or without any other source of heat
    • F27B14/061—Induction furnaces
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0462—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/36—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations using air tracks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/78—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using vacuum or suction, e.g. Bernoulli chucks

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Chemical Vapour Deposition (AREA)
  • Gripping On Spindles (AREA)
  • Resistance Welding (AREA)
  • Supply And Installment Of Electrical Components (AREA)
  • Control And Other Processes For Unpacking Of Materials (AREA)
  • Processing Of Meat And Fish (AREA)
  • Paper (AREA)
  • General Induction Heating (AREA)
AT02808223T 2002-12-10 2002-12-10 Suszeptorsystem ATE423226T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/IT2002/000774 WO2004053188A1 (en) 2002-12-10 2002-12-10 Susceptor system

Publications (1)

Publication Number Publication Date
ATE423226T1 true ATE423226T1 (de) 2009-03-15

Family

ID=32500473

Family Applications (2)

Application Number Title Priority Date Filing Date
AT02808223T ATE423226T1 (de) 2002-12-10 2002-12-10 Suszeptorsystem
AT03812670T ATE380263T1 (de) 2002-12-10 2003-06-11 Halterungssystem für eine behandlungsvorrichtung

Family Applications After (1)

Application Number Title Priority Date Filing Date
AT03812670T ATE380263T1 (de) 2002-12-10 2003-06-11 Halterungssystem für eine behandlungsvorrichtung

Country Status (9)

Country Link
US (2) US7615121B2 (de)
EP (2) EP1570108B1 (de)
JP (2) JP2006513559A (de)
KR (1) KR20050085503A (de)
CN (2) CN1708602A (de)
AT (2) ATE423226T1 (de)
AU (2) AU2002368439A1 (de)
DE (2) DE60231256D1 (de)
WO (2) WO2004053188A1 (de)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE423226T1 (de) 2002-12-10 2009-03-15 E T C Epitaxial Technology Ct Suszeptorsystem
DE60237240D1 (de) 2002-12-10 2010-09-16 E T C Epitaxial Technology Ct Suszeptorsystem
US8028531B2 (en) * 2004-03-01 2011-10-04 GlobalFoundries, Inc. Mitigating heat in an integrated circuit
CN100529198C (zh) * 2004-06-09 2009-08-19 Etc外延技术中心有限公司 用于处理装置的支承系统
CN101001978B (zh) * 2004-07-22 2010-10-13 东洋炭素株式会社 衬托器
ITMI20041677A1 (it) * 2004-08-30 2004-11-30 E T C Epitaxial Technology Ct Processo di pulitura e processo operativo per un reattore cvd.
KR100618868B1 (ko) * 2004-10-19 2006-08-31 삼성전자주식회사 스핀 장치
DE102004062553A1 (de) * 2004-12-24 2006-07-06 Aixtron Ag CVD-Reaktor mit RF-geheizter Prozesskammer
ITMI20052498A1 (it) * 2005-12-28 2007-06-29 Lpe Spa Camera di reazione a temperatura differenziata
JP5051875B2 (ja) * 2006-12-25 2012-10-17 東京エレクトロン株式会社 成膜装置および成膜方法
KR100885180B1 (ko) * 2006-12-27 2009-02-23 세메스 주식회사 기판 지지유닛, 그리고 상기 기판 지지유닛을 구비하는기판처리장치 및 방법
IL198123A0 (en) * 2008-04-18 2009-12-24 Snecma Propulsion Solide A heat treatment oven with inductive heating
KR20130107001A (ko) * 2012-03-21 2013-10-01 엘지이노텍 주식회사 증착 장치
ITCO20130073A1 (it) 2013-12-19 2015-06-20 Lpe Spa Camera di reazione di un reattore per crescite epitassiali adatta per l'uso con un dispositivo di carico/scarico e reattore
JP6800022B2 (ja) 2014-07-03 2020-12-16 エルピーイー ソシエタ ペル アチオニ 基板を操作するためのツール、操作方法およびエピタキシャル反応器
KR102343103B1 (ko) * 2015-07-10 2021-12-28 주식회사 테스 유기금속화학기상증착장치
JP6648627B2 (ja) * 2016-04-27 2020-02-14 三菱電機株式会社 炭化珪素エピタキシャルウエハの製造方法、炭化珪素半導体装置の製造方法及び炭化珪素エピタキシャルウエハの製造装置
CN107435165A (zh) * 2016-05-26 2017-12-05 北京北方华创微电子装备有限公司 一种外延反应腔和化学气相外延设备
EP3497259A1 (de) * 2016-08-09 2019-06-19 Singulus Technologies AG System und verfahren zur gasphasenabscheidung
KR101885026B1 (ko) * 2017-03-22 2018-08-02 오충석 웨이퍼 회전장치
DE102018131751A1 (de) * 2018-12-11 2020-06-18 Aixtron Se Suszeptor eines CVD-Reaktors
IT201800011158A1 (it) 2018-12-17 2020-06-17 Lpe Spa Camera di reazione per un reattore epitassiale di materiale semiconduttore con sezione longitudinale non-uniforme e reattore
CN110331439A (zh) * 2019-07-22 2019-10-15 杭州弘晟智能科技有限公司 一种用于碳化硅外延的加热装置
CN114450781A (zh) 2019-10-03 2022-05-06 洛佩诗公司 具有装载/卸载组的处理装置和外延反应器
US12522949B2 (en) 2019-10-03 2026-01-13 Lpe S.P.A. Treating arrangement with storage chamber and epitaxial reactor
US12522947B2 (en) 2019-10-03 2026-01-13 Lpe S.P.A. Treating arrangement with transfer chamber and epitaxial reactor
CN112648937B (zh) * 2019-10-13 2023-01-06 中北大学 带有防转机构的孔检测装置与检测方法
IT201900022047A1 (it) * 2019-11-25 2021-05-25 Lpe Spa Dispositivo di supporto substrati per una camera di reazione di un reattore epitassiale con rotazione a flusso di gas, camera di reazione e reattore epitassiale
CN110760820A (zh) * 2019-12-05 2020-02-07 深圳市志橙半导体材料有限公司 一种气相沉积炉内气体悬浮装置
CN112951739B (zh) * 2019-12-10 2024-12-06 圆益Ips股份有限公司 基板支撑架及基板处理装置
IT202000021517A1 (it) 2020-09-11 2022-03-11 Lpe Spa Metodo per deposizione cvd di carburo di silicio con drogaggio di tipo n e reattore epitassiale
KR102854645B1 (ko) * 2020-11-18 2025-09-04 주식회사 원익아이피에스 기판 지지 조립체 및 기판 처리 장치
CN114686973B (zh) * 2022-03-18 2023-11-14 复旦大学 一种半导体薄膜生长感应加热式设备的反应腔结构
CN115537919B (zh) * 2022-11-01 2024-01-19 江苏汉印机电科技股份有限公司 一种高温气悬浮旋转机构
IT202300018780A1 (it) 2023-09-13 2025-03-13 Lpe Spa Reattore per deposizione epitassiale di materiale semiconduttore su substrati con slitta scorrevole per camera di reazione
IT202300021816A1 (it) 2023-10-19 2025-04-19 Lpe Spa Sistema di misurazione di velocità angolare per substrati utilizzati in reattori di deposizione epitassiale
JP2026028237A (ja) 2024-08-06 2026-02-19 エルピーイー・エッセ・ピ・ア 反応器部品からの炭化ケイ素膜のエッチング
KR20260038827A (ko) 2024-09-12 2026-03-19 엘피이 에스피에이 반응 챔버 부품으로부터 실리콘 카바이드 박막의 광자-보조 화학적 식각

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1458222A (en) 1973-03-12 1976-12-08 Electricity Council Furnaces for the production of tubular or cyclindrical ceramic articles
US3980854A (en) 1974-11-15 1976-09-14 Rca Corporation Graphite susceptor structure for inductively heating semiconductor wafers
JPH0669027B2 (ja) 1983-02-21 1994-08-31 株式会社日立製作所 半導体ウエハの薄膜形成方法
US4794217A (en) 1985-04-01 1988-12-27 Qing Hua University Induction system for rapid heat treatment of semiconductor wafers
FR2596070A1 (fr) 1986-03-21 1987-09-25 Labo Electronique Physique Dispositif comprenant un suscepteur plan tournant parallelement a un plan de reference autour d'un axe perpendiculaire a ce plan
FR2650841A1 (fr) 1989-08-11 1991-02-15 Thomson Tubes Electroniques Dispositif de depot d'un materiau sur un support thermiquement conducteur
US5155062A (en) 1990-12-20 1992-10-13 Cree Research, Inc. Method for silicon carbide chemical vapor deposition using levitated wafer system
US5106204A (en) 1991-03-25 1992-04-21 Dunham James L High unit load gas bearing
US5226383A (en) 1992-03-12 1993-07-13 Bell Communications Research, Inc. Gas foil rotating substrate holder
US5221356A (en) 1992-10-08 1993-06-22 Northern Telecom Limited Apparatus for manufacturing semiconductor wafers
SE9500326D0 (sv) 1995-01-31 1995-01-31 Abb Research Ltd Method for protecting the susceptor during epitaxial growth by CVD and a device for epitaxial growth by CVD
SE9600705D0 (sv) * 1996-02-26 1996-02-26 Abb Research Ltd A susceptor for a device for epitaxially growing objects and such a device
US5788777A (en) 1997-03-06 1998-08-04 Burk, Jr.; Albert A. Susceptor for an epitaxial growth factor
US6005226A (en) 1997-11-24 1999-12-21 Steag-Rtp Systems Rapid thermal processing (RTP) system with gas driven rotating substrate
DE10055033A1 (de) 2000-11-07 2002-05-08 Aixtron Ag CVD-Reaktor mit grafitschaum-isoliertem, rohrförmigen Suszeptor
DE10055182A1 (de) 2000-11-08 2002-05-29 Aixtron Ag CVD-Reaktor mit von einem Gasstrom drehgelagerten und -angetriebenen Substrathalter
DE10056029A1 (de) 2000-11-11 2002-05-16 Aixtron Ag Verfahren und Vorrichtung zur Temperatursteuerung der Oberflächentemperaturen von Substraten in einem CVD-Reaktor
US6569250B2 (en) 2001-01-08 2003-05-27 Cree, Inc. Gas-driven rotation apparatus and method for forming silicon carbide layers
DE10132448A1 (de) * 2001-07-04 2003-01-23 Aixtron Ag CVD-Vorrichtung mit differenziert temperiertem Substrathalter
ITMI20020306A1 (it) 2002-02-15 2003-08-18 Lpe Spa Suscettore dotato di rientranze e reattore epitassiale che utilizza lo stesso
US6797069B2 (en) 2002-04-08 2004-09-28 Cree, Inc. Gas driven planetary rotation apparatus and methods for forming silicon carbide layers
ATE423226T1 (de) 2002-12-10 2009-03-15 E T C Epitaxial Technology Ct Suszeptorsystem
DE60237240D1 (de) * 2002-12-10 2010-09-16 E T C Epitaxial Technology Ct Suszeptorsystem
CN100529198C (zh) 2004-06-09 2009-08-19 Etc外延技术中心有限公司 用于处理装置的支承系统

Also Published As

Publication number Publication date
DE60317932T2 (de) 2008-11-27
EP1570108B1 (de) 2009-02-18
WO2004053188A1 (en) 2004-06-24
AU2003242999A1 (en) 2004-06-30
EP1570108A1 (de) 2005-09-07
US7387687B2 (en) 2008-06-17
DE60317932D1 (de) 2008-01-17
AU2002368439A1 (en) 2004-06-30
US20060054091A1 (en) 2006-03-16
EP1581667B1 (de) 2007-12-05
CN1714169A (zh) 2005-12-28
JP2006509363A (ja) 2006-03-16
ATE380263T1 (de) 2007-12-15
US20060118048A1 (en) 2006-06-08
WO2004053189A1 (en) 2004-06-24
CN1708602A (zh) 2005-12-14
DE60231256D1 (de) 2009-04-02
JP2006513559A (ja) 2006-04-20
US7615121B2 (en) 2009-11-10
KR20050085503A (ko) 2005-08-29
EP1581667A1 (de) 2005-10-05

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