ATE380263T1 - Halterungssystem für eine behandlungsvorrichtung - Google Patents

Halterungssystem für eine behandlungsvorrichtung

Info

Publication number
ATE380263T1
ATE380263T1 AT03812670T AT03812670T ATE380263T1 AT E380263 T1 ATE380263 T1 AT E380263T1 AT 03812670 T AT03812670 T AT 03812670T AT 03812670 T AT03812670 T AT 03812670T AT E380263 T1 ATE380263 T1 AT E380263T1
Authority
AT
Austria
Prior art keywords
piece
constituted
hand side
wall
side wall
Prior art date
Application number
AT03812670T
Other languages
English (en)
Inventor
Natale Speciale
Gianluca Valente
Danilo Crippa
Franco Preti
Original Assignee
E T C Epitaxial Technology Ct
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by E T C Epitaxial Technology Ct filed Critical E T C Epitaxial Technology Ct
Application granted granted Critical
Publication of ATE380263T1 publication Critical patent/ATE380263T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/14—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B14/00—Crucible or pot furnaces
    • F27B14/06—Crucible or pot furnaces heated electrically, e.g. induction crucible furnaces with or without any other source of heat
    • F27B14/061—Induction furnaces
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0462—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/36—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations using air tracks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/78—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using vacuum or suction, e.g. Bernoulli chucks

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Engineering & Computer Science (AREA)
  • Chemical Vapour Deposition (AREA)
  • Gripping On Spindles (AREA)
  • Resistance Welding (AREA)
  • Supply And Installment Of Electrical Components (AREA)
  • Processing Of Meat And Fish (AREA)
  • Paper (AREA)
  • Control And Other Processes For Unpacking Of Materials (AREA)
  • General Induction Heating (AREA)
AT03812670T 2002-12-10 2003-06-11 Halterungssystem für eine behandlungsvorrichtung ATE380263T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/IT2002/000774 WO2004053188A1 (en) 2002-12-10 2002-12-10 Susceptor system

Publications (1)

Publication Number Publication Date
ATE380263T1 true ATE380263T1 (de) 2007-12-15

Family

ID=32500473

Family Applications (2)

Application Number Title Priority Date Filing Date
AT02808223T ATE423226T1 (de) 2002-12-10 2002-12-10 Suszeptorsystem
AT03812670T ATE380263T1 (de) 2002-12-10 2003-06-11 Halterungssystem für eine behandlungsvorrichtung

Family Applications Before (1)

Application Number Title Priority Date Filing Date
AT02808223T ATE423226T1 (de) 2002-12-10 2002-12-10 Suszeptorsystem

Country Status (9)

Country Link
US (2) US7615121B2 (de)
EP (2) EP1570108B1 (de)
JP (2) JP2006513559A (de)
KR (1) KR20050085503A (de)
CN (2) CN1708602A (de)
AT (2) ATE423226T1 (de)
AU (2) AU2002368439A1 (de)
DE (2) DE60231256D1 (de)
WO (2) WO2004053188A1 (de)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2002368439A1 (en) * 2002-12-10 2004-06-30 Etc Srl Susceptor system
ATE476536T1 (de) * 2002-12-10 2010-08-15 E T C Epitaxial Technology Ct Suszeptorsystem
US8028531B2 (en) * 2004-03-01 2011-10-04 GlobalFoundries, Inc. Mitigating heat in an integrated circuit
EP1651802B1 (de) * 2004-06-09 2011-03-09 E.T.C. Epitaxial Technology Center SRL Halterungssystem für behandlungsapparaturen
WO2006008941A1 (ja) 2004-07-22 2006-01-26 Toyo Tanso Co., Ltd. サセプタ
ITMI20041677A1 (it) * 2004-08-30 2004-11-30 E T C Epitaxial Technology Ct Processo di pulitura e processo operativo per un reattore cvd.
KR100618868B1 (ko) * 2004-10-19 2006-08-31 삼성전자주식회사 스핀 장치
DE102004062553A1 (de) * 2004-12-24 2006-07-06 Aixtron Ag CVD-Reaktor mit RF-geheizter Prozesskammer
ITMI20052498A1 (it) * 2005-12-28 2007-06-29 Lpe Spa Camera di reazione a temperatura differenziata
JP5051875B2 (ja) * 2006-12-25 2012-10-17 東京エレクトロン株式会社 成膜装置および成膜方法
KR100885180B1 (ko) * 2006-12-27 2009-02-23 세메스 주식회사 기판 지지유닛, 그리고 상기 기판 지지유닛을 구비하는기판처리장치 및 방법
IL198123A0 (en) * 2008-04-18 2009-12-24 Snecma Propulsion Solide A heat treatment oven with inductive heating
KR20130107001A (ko) * 2012-03-21 2013-10-01 엘지이노텍 주식회사 증착 장치
ITCO20130073A1 (it) 2013-12-19 2015-06-20 Lpe Spa Camera di reazione di un reattore per crescite epitassiali adatta per l'uso con un dispositivo di carico/scarico e reattore
WO2016001863A1 (en) 2014-07-03 2016-01-07 Lpe S.P.A. Tool for manipulating substrates, manipulation method and epitaxial reactor
KR102343103B1 (ko) * 2015-07-10 2021-12-28 주식회사 테스 유기금속화학기상증착장치
JP6648627B2 (ja) 2016-04-27 2020-02-14 三菱電機株式会社 炭化珪素エピタキシャルウエハの製造方法、炭化珪素半導体装置の製造方法及び炭化珪素エピタキシャルウエハの製造装置
CN107435165A (zh) * 2016-05-26 2017-12-05 北京北方华创微电子装备有限公司 一种外延反应腔和化学气相外延设备
WO2018028873A1 (en) * 2016-08-09 2018-02-15 Singulus Technologies Ag A non-contact substrate carrier for simultaneous rotation and levitation of a substrate
KR101885026B1 (ko) * 2017-03-22 2018-08-02 오충석 웨이퍼 회전장치
DE102018131751A1 (de) * 2018-12-11 2020-06-18 Aixtron Se Suszeptor eines CVD-Reaktors
IT201800011158A1 (it) 2018-12-17 2020-06-17 Lpe Spa Camera di reazione per un reattore epitassiale di materiale semiconduttore con sezione longitudinale non-uniforme e reattore
CN110331439A (zh) * 2019-07-22 2019-10-15 杭州弘晟智能科技有限公司 一种用于碳化硅外延的加热装置
EP4022239A1 (de) 2019-10-03 2022-07-06 LPE S.p.A. Behandlungsanordnung mit lade-/entladegruppe und epitaxialreaktor
WO2021064650A1 (en) 2019-10-03 2021-04-08 Lpe S.P.A. Treating arrangement with transfer chamber and epitaxial reactor
EP4022240A1 (de) 2019-10-03 2022-07-06 LPE S.p.A. Behandlungsanordnung mit speicherkammer und epitaxialreaktor
CN112648937B (zh) * 2019-10-13 2023-01-06 中北大学 带有防转机构的孔检测装置与检测方法
IT201900022047A1 (it) 2019-11-25 2021-05-25 Lpe Spa Dispositivo di supporto substrati per una camera di reazione di un reattore epitassiale con rotazione a flusso di gas, camera di reazione e reattore epitassiale
CN110760820A (zh) * 2019-12-05 2020-02-07 深圳市志橙半导体材料有限公司 一种气相沉积炉内气体悬浮装置
CN112951739B (zh) * 2019-12-10 2024-12-06 圆益Ips股份有限公司 基板支撑架及基板处理装置
IT202000021517A1 (it) 2020-09-11 2022-03-11 Lpe Spa Metodo per deposizione cvd di carburo di silicio con drogaggio di tipo n e reattore epitassiale
KR102854645B1 (ko) * 2020-11-18 2025-09-04 주식회사 원익아이피에스 기판 지지 조립체 및 기판 처리 장치
CN114686973B (zh) * 2022-03-18 2023-11-14 复旦大学 一种半导体薄膜生长感应加热式设备的反应腔结构
CN115537919B (zh) * 2022-11-01 2024-01-19 江苏汉印机电科技股份有限公司 一种高温气悬浮旋转机构
IT202300018780A1 (it) 2023-09-13 2025-03-13 Lpe Spa Reattore per deposizione epitassiale di materiale semiconduttore su substrati con slitta scorrevole per camera di reazione
IT202300021816A1 (it) 2023-10-19 2025-04-19 Lpe Spa Sistema di misurazione di velocità angolare per substrati utilizzati in reattori di deposizione epitassiale
CN121693021A (zh) 2024-09-12 2026-03-17 Lpe公司 来自反应室部分的碳化硅膜的光子辅助化学蚀刻

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1458222A (en) 1973-03-12 1976-12-08 Electricity Council Furnaces for the production of tubular or cyclindrical ceramic articles
US3980854A (en) * 1974-11-15 1976-09-14 Rca Corporation Graphite susceptor structure for inductively heating semiconductor wafers
JPH0669027B2 (ja) * 1983-02-21 1994-08-31 株式会社日立製作所 半導体ウエハの薄膜形成方法
US4794217A (en) * 1985-04-01 1988-12-27 Qing Hua University Induction system for rapid heat treatment of semiconductor wafers
FR2596070A1 (fr) * 1986-03-21 1987-09-25 Labo Electronique Physique Dispositif comprenant un suscepteur plan tournant parallelement a un plan de reference autour d'un axe perpendiculaire a ce plan
FR2650841A1 (fr) 1989-08-11 1991-02-15 Thomson Tubes Electroniques Dispositif de depot d'un materiau sur un support thermiquement conducteur
US5155062A (en) * 1990-12-20 1992-10-13 Cree Research, Inc. Method for silicon carbide chemical vapor deposition using levitated wafer system
US5106204A (en) * 1991-03-25 1992-04-21 Dunham James L High unit load gas bearing
US5226383A (en) * 1992-03-12 1993-07-13 Bell Communications Research, Inc. Gas foil rotating substrate holder
US5221356A (en) * 1992-10-08 1993-06-22 Northern Telecom Limited Apparatus for manufacturing semiconductor wafers
SE9500326D0 (sv) * 1995-01-31 1995-01-31 Abb Research Ltd Method for protecting the susceptor during epitaxial growth by CVD and a device for epitaxial growth by CVD
SE9600705D0 (sv) * 1996-02-26 1996-02-26 Abb Research Ltd A susceptor for a device for epitaxially growing objects and such a device
US5788777A (en) * 1997-03-06 1998-08-04 Burk, Jr.; Albert A. Susceptor for an epitaxial growth factor
US6005226A (en) * 1997-11-24 1999-12-21 Steag-Rtp Systems Rapid thermal processing (RTP) system with gas driven rotating substrate
DE10055033A1 (de) * 2000-11-07 2002-05-08 Aixtron Ag CVD-Reaktor mit grafitschaum-isoliertem, rohrförmigen Suszeptor
DE10055182A1 (de) 2000-11-08 2002-05-29 Aixtron Ag CVD-Reaktor mit von einem Gasstrom drehgelagerten und -angetriebenen Substrathalter
DE10056029A1 (de) * 2000-11-11 2002-05-16 Aixtron Ag Verfahren und Vorrichtung zur Temperatursteuerung der Oberflächentemperaturen von Substraten in einem CVD-Reaktor
US6569250B2 (en) * 2001-01-08 2003-05-27 Cree, Inc. Gas-driven rotation apparatus and method for forming silicon carbide layers
DE10132448A1 (de) * 2001-07-04 2003-01-23 Aixtron Ag CVD-Vorrichtung mit differenziert temperiertem Substrathalter
ITMI20020306A1 (it) 2002-02-15 2003-08-18 Lpe Spa Suscettore dotato di rientranze e reattore epitassiale che utilizza lo stesso
US6797069B2 (en) * 2002-04-08 2004-09-28 Cree, Inc. Gas driven planetary rotation apparatus and methods for forming silicon carbide layers
AU2002368439A1 (en) 2002-12-10 2004-06-30 Etc Srl Susceptor system
ATE476536T1 (de) * 2002-12-10 2010-08-15 E T C Epitaxial Technology Ct Suszeptorsystem
EP1651802B1 (de) * 2004-06-09 2011-03-09 E.T.C. Epitaxial Technology Center SRL Halterungssystem für behandlungsapparaturen

Also Published As

Publication number Publication date
US20060118048A1 (en) 2006-06-08
WO2004053189A1 (en) 2004-06-24
US7387687B2 (en) 2008-06-17
CN1714169A (zh) 2005-12-28
US7615121B2 (en) 2009-11-10
AU2002368439A1 (en) 2004-06-30
DE60231256D1 (de) 2009-04-02
EP1570108A1 (de) 2005-09-07
CN1708602A (zh) 2005-12-14
JP2006513559A (ja) 2006-04-20
US20060054091A1 (en) 2006-03-16
ATE423226T1 (de) 2009-03-15
KR20050085503A (ko) 2005-08-29
DE60317932D1 (de) 2008-01-17
EP1581667B1 (de) 2007-12-05
AU2003242999A1 (en) 2004-06-30
DE60317932T2 (de) 2008-11-27
EP1581667A1 (de) 2005-10-05
EP1570108B1 (de) 2009-02-18
JP2006509363A (ja) 2006-03-16
WO2004053188A1 (en) 2004-06-24

Similar Documents

Publication Publication Date Title
ATE380263T1 (de) Halterungssystem für eine behandlungsvorrichtung
ATE476536T1 (de) Suszeptorsystem
TWI267161B (en) Wafer susceptor
IL149666A0 (en) INHIBITING GENE EXPRESSION WITH DsRNA
IL159446A0 (en) Needle electrode
WO2011006018A3 (en) Apparatus and method for plasma processing
ATE353472T1 (de) Plasmabehandlungsvorrichtung und -verfahren
MY120869A (en) Plasma treatment apparatus and method
SI1454508T1 (sl) Upogibno električno vezje za gretje, obsegajočemetalizirano tkanino
SE1267869T5 (de)
ATE103344T1 (de) Verfahren zur erzeugung von schichten aus harten kohlenstoffmodifikationen und vorrichtung zur durchfuehrung des verfahrens.
YU63800A (sh) Uređaj i postupak za obradu kontinualnog električno provodljivog materijala
DE69907767D1 (de) Verfahren zum thermischen Bearbeiten von Werkstücken mittels einer thermischen übertragenden Flüssigkeit und Kondensationsofen zur Durchführung des Verfahrens
MX2020007236A (es) Unidad de temperatura en un dispositivo de horno para el tratamiento de calor de una pletina.
WO2003104397A3 (en) ANTISENSE MODULATION OF PROTEIN KINASE GR 6 EXPRESSION
UA27736C2 (uk) Спосіб безперервного виготовлення електрода без домішок для дугових електропечей
DE69802881D1 (de) Verfahren zur thermischen Behandlung eines feuerfesten, dielektrischen Körpers, zum Beispiel aus Glas, mittels Plasma
AU2003234342A8 (en) Ablated slam-dependent entry
DK1629697T3 (da) Pladeelement med lagdelt opvarmning
NO20022358L (no) Plasmabehandlingsapparat med en elektrisk ledende vegg
GB9924941D0 (en) Treatment of dyskinesia
YU22802A (sh) Izonipekotamidi za lečenje poremećaja nastalih posredstvom integrina
NO20060793L (no) Elektrisk tilforselsenhet i innretning for elektrokjemisk behandling
MXPA04001048A (es) Imidazopiridinas sustituidas con alquilo, para el tratamiento de trastornos gastrointestinales.
JPH06136509A (ja) プラズマ浸炭炉

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties