ATE424621T1 - Belichtungssystem mit einem geladenen teilchenstrahl - Google Patents

Belichtungssystem mit einem geladenen teilchenstrahl

Info

Publication number
ATE424621T1
ATE424621T1 AT05801831T AT05801831T ATE424621T1 AT E424621 T1 ATE424621 T1 AT E424621T1 AT 05801831 T AT05801831 T AT 05801831T AT 05801831 T AT05801831 T AT 05801831T AT E424621 T1 ATE424621 T1 AT E424621T1
Authority
AT
Austria
Prior art keywords
charged particle
exposure system
particle beam
apertures
shift registers
Prior art date
Application number
AT05801831T
Other languages
English (en)
Inventor
Elmar Platzgummer
Rainer Knippelmeyer
Original Assignee
Zeiss Carl Sms Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zeiss Carl Sms Gmbh filed Critical Zeiss Carl Sms Gmbh
Application granted granted Critical
Publication of ATE424621T1 publication Critical patent/ATE424621T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/045—Beam blanking or chopping, i.e. arrangements for momentarily interrupting exposure to the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. program control
    • H01J37/3023—Program control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/043—Beam blanking
    • H01J2237/0435—Multi-aperture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30472—Controlling the beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31752—Lithography using particular beams or near-field effects, e.g. STM-like techniques
    • H01J2237/31754—Lithography using particular beams or near-field effects, e.g. STM-like techniques using electron beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31774—Multi-beam

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Beam Exposure (AREA)
AT05801831T 2005-10-28 2005-10-28 Belichtungssystem mit einem geladenen teilchenstrahl ATE424621T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2005/011593 WO2007048433A1 (en) 2005-10-28 2005-10-28 Charged particle beam exposure system

Publications (1)

Publication Number Publication Date
ATE424621T1 true ATE424621T1 (de) 2009-03-15

Family

ID=36675947

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05801831T ATE424621T1 (de) 2005-10-28 2005-10-28 Belichtungssystem mit einem geladenen teilchenstrahl

Country Status (6)

Country Link
US (1) US8026495B2 (de)
EP (1) EP1943660B9 (de)
JP (1) JP4843679B2 (de)
AT (1) ATE424621T1 (de)
DE (1) DE602005013134D1 (de)
WO (1) WO2007048433A1 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102709143B (zh) * 2003-09-05 2016-03-09 卡尔蔡司Smt有限责任公司 电子光学排布结构、多电子分束检验系统和方法
JP5663717B2 (ja) * 2005-09-06 2015-02-04 カール ツァイス マイクロスコピー ゲーエムベーハーＣａｒｌ Ｚｅｉｓｓ Ｍｉｃｒｏｓｃｏｐｙ Ｇｍｂｈ 荷電粒子システム
US8026495B2 (en) 2005-10-28 2011-09-27 Carl Zeiss Sms Gmbh Charged particle beam exposure system
US8294125B2 (en) * 2009-11-18 2012-10-23 Kla-Tencor Corporation High-sensitivity and high-throughput electron beam inspection column enabled by adjustable beam-limiting aperture
EP2750165B1 (de) 2011-10-03 2016-07-13 Param Corporation Elektronenstrahllithografisches verfahren
JP5963139B2 (ja) * 2011-10-03 2016-08-03 株式会社Ｐａｒａｍ 電子ビーム描画方法および描画装置
JP6014342B2 (ja) 2012-03-22 2016-10-25 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
KR102231730B1 (ko) * 2012-06-26 2021-03-24 케이엘에이 코포레이션 각도 분해형 반사율 측정에서의 스캐닝 및 광학 계측으로부터 회절의 알고리즘적 제거
JP6087570B2 (ja) * 2012-10-15 2017-03-01 キヤノン株式会社 描画装置、および物品の製造方法
JP2014116518A (ja) * 2012-12-11 2014-06-26 Canon Inc 描画装置及び物品の製造方法
NL2010760C2 (en) * 2013-05-03 2014-11-04 Mapper Lithography Ip Bv Beam grid layout.
JP6147642B2 (ja) * 2013-10-11 2017-06-14 株式会社ニューフレアテクノロジー マルチ荷電粒子ビームのブランキング装置
JP6230881B2 (ja) * 2013-11-12 2017-11-15 株式会社ニューフレアテクノロジー マルチ荷電粒子ビームのブランキング装置及びマルチ荷電粒子ビーム描画方法
WO2015191105A1 (en) * 2014-06-13 2015-12-17 Intel Corporation Ebeam three beam aperture array
TWI578364B (zh) 2014-09-03 2017-04-11 Nuflare Technology Inc Inspection method of masking device with multiple charged particle beam
JP2019114748A (ja) * 2017-12-26 2019-07-11 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画方法及びマルチ荷電粒子ビーム描画装置
DE102018202421B3 (de) 2018-02-16 2019-07-11 Carl Zeiss Microscopy Gmbh Vielstrahl-Teilchenstrahlsystem
EP3703100A1 (de) * 2019-02-27 2020-09-02 FEI Company Ladungsteilchenstrahlvorrichtung zur inspektion einer probe mit einer vielzahl von ladungsteilchenteilstrahlen
EP3985710A1 (de) * 2020-10-15 2022-04-20 ASML Netherlands B.V. Lochmuster zur definition von multistrahlen

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JPS6169125A (ja) 1984-08-06 1986-04-09 Nippon Telegr & Teleph Corp <Ntt> 荷電ビ−ム露光装置
US4909864A (en) * 1986-09-16 1990-03-20 Kawasaki Steel Corp. Method of producing extra-low iron loss grain oriented silicon steel sheets
US5262341A (en) * 1989-05-19 1993-11-16 Fujitsu Limited Blanking aperture array and charged particle beam exposure method
KR950002578B1 (ko) * 1991-03-13 1995-03-23 후지쓰 가부시끼가이샤 전자빔 노광방법
JP3194541B2 (ja) * 1992-07-24 2001-07-30 富士通株式会社 電子ビーム露光装置
JP3310400B2 (ja) * 1993-02-19 2002-08-05 富士通株式会社 電子ビーム露光方法および露光装置
US5369282A (en) * 1992-08-03 1994-11-29 Fujitsu Limited Electron beam exposure method and system for exposing a pattern on a substrate with an improved accuracy and throughput
JP3200503B2 (ja) * 1993-06-25 2001-08-20 富士通株式会社 電子ビーム露光装置
JP3678749B2 (ja) * 1994-01-13 2005-08-03 アイエムエス イオネン マイクロファブルカティオンズ システメ ゲーエムベーハー 粒子ビーム、特にイオンの光学像投影システム
JPH07273006A (ja) 1994-03-29 1995-10-20 Fujitsu Ltd 荷電粒子ビーム露光方法及びその装置
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DE19946447B4 (de) * 1998-10-13 2012-01-19 Ims Nanofabrication Ag Teilchenoptisches Abbildungssystem für Lithographiezwecke
WO2001075947A1 (en) * 2000-04-04 2001-10-11 Advantest Corporation Multibeam exposure apparatus comprising multiaxis electron lens, multiaxis electron lens for focusing electron beams, and method for manufacturing semiconductor device
US6768125B2 (en) * 2002-01-17 2004-07-27 Ims Nanofabrication, Gmbh Maskless particle-beam system for exposing a pattern on a substrate
EP2302457B1 (de) * 2002-10-25 2016-03-30 Mapper Lithography Ip B.V. Lithographisches System
GB2408383B (en) * 2003-10-28 2006-05-10 Ims Nanofabrication Gmbh Pattern-definition device for maskless particle-beam exposure apparatus
GB2412232A (en) 2004-03-15 2005-09-21 Ims Nanofabrication Gmbh Particle-optical projection system
GB2413694A (en) * 2004-04-30 2005-11-02 Ims Nanofabrication Gmbh Particle-beam exposure apparatus
GB2414111B (en) * 2004-04-30 2010-01-27 Ims Nanofabrication Gmbh Advanced pattern definition for particle-beam processing
US8026495B2 (en) 2005-10-28 2011-09-27 Carl Zeiss Sms Gmbh Charged particle beam exposure system

Also Published As

Publication number Publication date
EP1943660B9 (de) 2009-09-09
WO2007048433A1 (en) 2007-05-03
EP1943660B1 (de) 2009-03-04
US20090212240A1 (en) 2009-08-27
JP2009514200A (ja) 2009-04-02
EP1943660A1 (de) 2008-07-16
DE602005013134D1 (de) 2009-04-16
US8026495B2 (en) 2011-09-27
JP4843679B2 (ja) 2011-12-21

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