ATE425279T1 - Wachstum von aluminium-einkristallen - Google Patents

Wachstum von aluminium-einkristallen

Info

Publication number
ATE425279T1
ATE425279T1 AT99937395T AT99937395T ATE425279T1 AT E425279 T1 ATE425279 T1 AT E425279T1 AT 99937395 T AT99937395 T AT 99937395T AT 99937395 T AT99937395 T AT 99937395T AT E425279 T1 ATE425279 T1 AT E425279T1
Authority
AT
Austria
Prior art keywords
single crystals
growth
aluminum single
aln
melt
Prior art date
Application number
AT99937395T
Other languages
English (en)
Inventor
Charles Hunter
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Inc filed Critical Cree Inc
Application granted granted Critical
Publication of ATE425279T1 publication Critical patent/ATE425279T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
AT99937395T 1997-10-06 1999-07-22 Wachstum von aluminium-einkristallen ATE425279T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/944,393 US5954874A (en) 1996-10-17 1997-10-06 Growth of bulk single crystals of aluminum nitride from a melt
PCT/US1999/016619 WO2001007690A1 (en) 1997-10-06 1999-07-22 Growth of bulk single crystals of aluminum

Publications (1)

Publication Number Publication Date
ATE425279T1 true ATE425279T1 (de) 2009-03-15

Family

ID=25481314

Family Applications (1)

Application Number Title Priority Date Filing Date
AT99937395T ATE425279T1 (de) 1997-10-06 1999-07-22 Wachstum von aluminium-einkristallen

Country Status (6)

Country Link
US (2) US5954874A (de)
EP (1) EP1226291B1 (de)
KR (1) KR100588424B1 (de)
CN (1) CN1174124C (de)
AT (1) ATE425279T1 (de)
WO (1) WO2001007690A1 (de)

Families Citing this family (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5679152A (en) * 1994-01-27 1997-10-21 Advanced Technology Materials, Inc. Method of making a single crystals Ga*N article
US6958093B2 (en) * 1994-01-27 2005-10-25 Cree, Inc. Free-standing (Al, Ga, In)N and parting method for forming same
US5858086A (en) * 1996-10-17 1999-01-12 Hunter; Charles Eric Growth of bulk single crystals of aluminum nitride
US6048813A (en) * 1998-10-09 2000-04-11 Cree, Inc. Simulated diamond gemstones formed of aluminum nitride and aluminum nitride: silicon carbide alloys
US6596079B1 (en) * 2000-03-13 2003-07-22 Advanced Technology Materials, Inc. III-V nitride substrate boule and method of making and using the same
AU2002219978A1 (en) 2000-11-30 2002-06-11 Kyma Technologies, Inc. Method and apparatus for producing miiin columns and miiin materials grown thereon
WO2002043466A2 (en) 2000-11-30 2002-06-06 North Carolina State University Non-thermionic sputter material transport device, methods of use, and materials produced thereby
US6906352B2 (en) 2001-01-16 2005-06-14 Cree, Inc. Group III nitride LED with undoped cladding layer and multiple quantum well
US6800876B2 (en) 2001-01-16 2004-10-05 Cree, Inc. Group III nitride LED with undoped cladding layer (5000.137)
US6706114B2 (en) * 2001-05-21 2004-03-16 Cree, Inc. Methods of fabricating silicon carbide crystals
US7727713B2 (en) 2001-06-20 2010-06-01 Nuevolution A/S Templated molecules and methods for using such molecules
US20060005763A1 (en) 2001-12-24 2006-01-12 Crystal Is, Inc. Method and apparatus for producing large, single-crystals of aluminum nitride
US7638346B2 (en) * 2001-12-24 2009-12-29 Crystal Is, Inc. Nitride semiconductor heterostructures and related methods
US8545629B2 (en) 2001-12-24 2013-10-01 Crystal Is, Inc. Method and apparatus for producing large, single-crystals of aluminum nitride
AU2003247266A1 (en) 2002-08-01 2004-02-23 Nuevolution A/S Multi-step synthesis of templated molecules
JP3935037B2 (ja) * 2002-09-30 2007-06-20 Ｄｏｗａホールディングス株式会社 アルミニウム−セラミックス接合基板の製造方法
CN102838654B (zh) 2002-10-30 2016-05-18 纽韦卢森公司 合成双功能复合物的方法
DE60330406D1 (de) 2002-12-19 2010-01-14 Nuevolution As Durch quasizufallsstrukturen und funktionen geführte synthesemethode
US20070026397A1 (en) 2003-02-21 2007-02-01 Nuevolution A/S Method for producing second-generation library
DE10335538A1 (de) * 2003-07-31 2005-02-24 Sicrystal Ag Verfahren und Vorrichtung zur AIN-Einkristall-Herstellung mit gasdurchlässiger Tiegelwand
ATE447626T1 (de) 2003-09-18 2009-11-15 Nuevolution As Methode zur gewinnung struktureller informationen kodierter moleküle und zur selektion von verbindungen
US7087112B1 (en) * 2003-12-02 2006-08-08 Crystal Is, Inc. Nitride ceramics to mount aluminum nitride seed for sublimation growth
CN100494520C (zh) * 2004-03-31 2009-06-03 松下电器产业株式会社 制造第iii族元素氮化物晶体的方法、其中所用的制造装置以及由此制造的半导体元件
US7294199B2 (en) * 2004-06-10 2007-11-13 Sumitomo Electric Industries, Ltd. Nitride single crystal and producing method thereof
EP1612300B1 (de) * 2004-06-30 2010-05-26 Sumitomo Electric Industries, Ltd. Verfahren zur Herstellung eines AlN-Einkristalles
JP4608970B2 (ja) * 2004-07-01 2011-01-12 住友電気工業株式会社 窒化物単結晶の製造方法
KR101077323B1 (ko) 2004-07-07 2011-10-26 스미토모덴키고교가부시키가이샤 질화물단결정 및 그 제조방법
JP4558584B2 (ja) * 2004-07-08 2010-10-06 日本碍子株式会社 窒化アルミニウム単結晶の製造方法
CN100447310C (zh) * 2004-07-15 2008-12-31 住友电气工业株式会社 氮化物单晶和其生产方法
KR101357460B1 (ko) * 2004-09-16 2014-02-03 엔지케이 인슐레이터 엘티디 Ａｉｎ 단결정의 제조 방법 및 ａｉｎ 단결정
JP4603498B2 (ja) * 2005-03-14 2010-12-22 株式会社リコー Ｉｉｉ族窒化物結晶の製造方法及び製造装置
EP1775356A3 (de) * 2005-10-14 2009-12-16 Ricoh Company, Ltd. Kristallziehungsvorrichtung und Verfahren zur Herstellung von Gruppe-III-Nitrid Kristallen
EP1960570A2 (de) * 2005-11-28 2008-08-27 Crystal Is, Inc. Grosse aluminiumnitridkristalle mit reduzierten defekten und herstellungsverfahren dafür
LT3018206T (lt) 2005-12-01 2021-12-10 Nuevolution A/S Fermentiniai kodavimo būdai, skirti didelių bibliotekų efektyviai sintezei
WO2007065018A2 (en) 2005-12-02 2007-06-07 Crystal Is, Inc. Doped aluminum nitride crystals and methods of making them
US9034103B2 (en) 2006-03-30 2015-05-19 Crystal Is, Inc. Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them
WO2007123735A1 (en) 2006-03-30 2007-11-01 Crystal Is, Inc. Methods for controllable doping of aluminum nitride bulk crystals
US9771666B2 (en) 2007-01-17 2017-09-26 Crystal Is, Inc. Defect reduction in seeded aluminum nitride crystal growth
US9028612B2 (en) 2010-06-30 2015-05-12 Crystal Is, Inc. Growth of large aluminum nitride single crystals with thermal-gradient control
WO2008088838A1 (en) 2007-01-17 2008-07-24 Crystal Is, Inc. Defect reduction in seeded aluminum nitride crystal growth
WO2008094464A2 (en) 2007-01-26 2008-08-07 Crystal Is, Inc. Thick pseudomorphic nitride epitaxial layers
US8080833B2 (en) 2007-01-26 2011-12-20 Crystal Is, Inc. Thick pseudomorphic nitride epitaxial layers
US8088220B2 (en) * 2007-05-24 2012-01-03 Crystal Is, Inc. Deep-eutectic melt growth of nitride crystals
CA2759530C (en) * 2009-04-24 2015-01-20 National Institute Of Advanced Industrial Science And Technology Apparatus for manufacturing aluminum nitride single crystal, method for manufacturing aluminum nitride single crystal, and aluminum nitride single crystal
US20100314551A1 (en) * 2009-06-11 2010-12-16 Bettles Timothy J In-line Fluid Treatment by UV Radiation
US8962359B2 (en) 2011-07-19 2015-02-24 Crystal Is, Inc. Photon extraction from nitride ultraviolet light-emitting devices
US20140227527A1 (en) 2011-09-29 2014-08-14 Nitride Solutions Inc. Inorganic materials, methods and apparatus for making same, and uses thereof
WO2014031119A1 (en) 2012-08-23 2014-02-27 National University Corporation Tokyo University Of Agriculture And Technology Highly transparent aluminum nitride single crystalline layers and devices made therefrom
EP2951869A1 (de) 2013-01-29 2015-12-09 Hexatech Inc. Optoelektronische vorrichtungen mit einem einkristallinen aluminiumnitridsubstrat
EP2973719B1 (de) 2013-03-14 2021-04-21 Hexatech Inc. Leistungshalbleiterbauelemente mit einem einkristallinen aluminiumnitridsubstrat
WO2014151264A1 (en) 2013-03-15 2014-09-25 Crystal Is, Inc. Planar contacts to pseudomorphic electronic and optoelectronic devices
US10060046B2 (en) * 2014-09-19 2018-08-28 Corner Star Limited Crystal puller for inhibiting melt contamination
CN109652859B (zh) * 2018-12-27 2024-04-26 北京大学东莞光电研究院 一种光气耦合晶体生长装置
CN111188091B (zh) * 2020-02-17 2021-09-03 山东大学 一种用于电阻法氮化铝晶体生长炉的热场及其装配方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US34861A (en) * 1862-04-01 Improved washing-machine
US3121062A (en) * 1961-06-22 1964-02-11 Herbert J Gonld Vapor phase crystallization
US3275415A (en) * 1964-02-27 1966-09-27 Westinghouse Electric Corp Apparatus for and preparation of silicon carbide single crystals
NL6615059A (de) * 1966-10-25 1968-04-26
US4147572A (en) * 1976-10-18 1979-04-03 Vodakov Jury A Method for epitaxial production of semiconductor silicon carbide utilizing a close-space sublimation deposition technique
GB2001046B (en) * 1977-07-14 1982-06-30 Secr Defence Synthesis of aluminium nitride
US4152182A (en) * 1978-05-15 1979-05-01 International Business Machines Corporation Process for producing electronic grade aluminum nitride films utilizing the reduction of aluminum oxide
US4382837A (en) * 1981-06-30 1983-05-10 International Business Machines Corporation Epitaxial crystal fabrication of SiC:AlN
US4489128A (en) * 1981-06-30 1984-12-18 International Business Machines Corporation Structure containing epitaxial crystals on a substrate
US4597949A (en) * 1983-03-31 1986-07-01 Massachusetts Institute Of Technology Apparatus for growing crystals
JPS61291494A (ja) * 1985-06-19 1986-12-22 Sharp Corp 炭化珪素単結晶基板の製造方法
US4866005A (en) 1987-10-26 1989-09-12 North Carolina State University Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide
JP2650744B2 (ja) * 1988-12-28 1997-09-03 シャープ株式会社 発光ダイオード
JP3214868B2 (ja) * 1991-07-19 2001-10-02 ローム株式会社 ヘテロ接合バイポーラトランジスタの製造方法
US5270263A (en) * 1991-12-20 1993-12-14 Micron Technology, Inc. Process for depositing aluminum nitride (AlN) using nitrogen plasma sputtering
US5433167A (en) * 1992-02-04 1995-07-18 Sharp Kabushiki Kaisha Method of producing silicon-carbide single crystals by sublimation recrystallization process using a seed crystal
US5587014A (en) * 1993-12-22 1996-12-24 Sumitomo Chemical Company, Limited Method for manufacturing group III-V compound semiconductor crystals
US5683505A (en) * 1994-11-08 1997-11-04 Sumitomo Sitix Corporation Process for producing single crystals
US5858086A (en) * 1996-10-17 1999-01-12 Hunter; Charles Eric Growth of bulk single crystals of aluminum nitride
US6048813A (en) * 1998-10-09 2000-04-11 Cree, Inc. Simulated diamond gemstones formed of aluminum nitride and aluminum nitride: silicon carbide alloys

Also Published As

Publication number Publication date
EP1226291A4 (de) 2007-05-02
KR100588424B1 (ko) 2006-06-09
WO2001007690A1 (en) 2001-02-01
CN1361834A (zh) 2002-07-31
EP1226291B1 (de) 2009-03-11
US5954874A (en) 1999-09-21
US6066205A (en) 2000-05-23
EP1226291A1 (de) 2002-07-31
KR20020034163A (ko) 2002-05-08
CN1174124C (zh) 2004-11-03

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