ATE425279T1 - Wachstum von aluminium-einkristallen - Google Patents

Wachstum von aluminium-einkristallen

Info

Publication number
ATE425279T1
ATE425279T1 AT99937395T AT99937395T ATE425279T1 AT E425279 T1 ATE425279 T1 AT E425279T1 AT 99937395 T AT99937395 T AT 99937395T AT 99937395 T AT99937395 T AT 99937395T AT E425279 T1 ATE425279 T1 AT E425279T1
Authority
AT
Austria
Prior art keywords
single crystals
growth
aluminum single
aln
melt
Prior art date
Application number
AT99937395T
Other languages
English (en)
Inventor
Charles Hunter
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Inc filed Critical Cree Inc
Application granted granted Critical
Publication of ATE425279T1 publication Critical patent/ATE425279T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
AT99937395T 1997-10-06 1999-07-22 Wachstum von aluminium-einkristallen ATE425279T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/944,393 US5954874A (en) 1996-10-17 1997-10-06 Growth of bulk single crystals of aluminum nitride from a melt
PCT/US1999/016619 WO2001007690A1 (en) 1997-10-06 1999-07-22 Growth of bulk single crystals of aluminum

Publications (1)

Publication Number Publication Date
ATE425279T1 true ATE425279T1 (de) 2009-03-15

Family

ID=25481314

Family Applications (1)

Application Number Title Priority Date Filing Date
AT99937395T ATE425279T1 (de) 1997-10-06 1999-07-22 Wachstum von aluminium-einkristallen

Country Status (6)

Country Link
US (2) US5954874A (de)
EP (1) EP1226291B1 (de)
KR (1) KR100588424B1 (de)
CN (1) CN1174124C (de)
AT (1) ATE425279T1 (de)
WO (1) WO2001007690A1 (de)

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US5679152A (en) * 1994-01-27 1997-10-21 Advanced Technology Materials, Inc. Method of making a single crystals Ga*N article
US6958093B2 (en) * 1994-01-27 2005-10-25 Cree, Inc. Free-standing (Al, Ga, In)N and parting method for forming same
US5858086A (en) * 1996-10-17 1999-01-12 Hunter; Charles Eric Growth of bulk single crystals of aluminum nitride
US6048813A (en) * 1998-10-09 2000-04-11 Cree, Inc. Simulated diamond gemstones formed of aluminum nitride and aluminum nitride: silicon carbide alloys
US6596079B1 (en) 2000-03-13 2003-07-22 Advanced Technology Materials, Inc. III-V nitride substrate boule and method of making and using the same
ATE528421T1 (de) 2000-11-30 2011-10-15 Univ North Carolina State Verfahren zur herstellung von gruppe-iii- metallnitrid-materialien
US6787010B2 (en) 2000-11-30 2004-09-07 North Carolina State University Non-thermionic sputter material transport device, methods of use, and materials produced thereby
US6800876B2 (en) 2001-01-16 2004-10-05 Cree, Inc. Group III nitride LED with undoped cladding layer (5000.137)
US6906352B2 (en) 2001-01-16 2005-06-14 Cree, Inc. Group III nitride LED with undoped cladding layer and multiple quantum well
US6706114B2 (en) * 2001-05-21 2004-03-16 Cree, Inc. Methods of fabricating silicon carbide crystals
EP1401850A1 (de) 2001-06-20 2004-03-31 Nuevolution A/S Nukleosidderivate zur herstellung einer verbindungsbibliothek
US7638346B2 (en) 2001-12-24 2009-12-29 Crystal Is, Inc. Nitride semiconductor heterostructures and related methods
US20060005763A1 (en) * 2001-12-24 2006-01-12 Crystal Is, Inc. Method and apparatus for producing large, single-crystals of aluminum nitride
US8545629B2 (en) 2001-12-24 2013-10-01 Crystal Is, Inc. Method and apparatus for producing large, single-crystals of aluminum nitride
WO2004013070A2 (en) 2002-08-01 2004-02-12 Nuevolution A/S Multi-step synthesis of templated molecules
JP3935037B2 (ja) * 2002-09-30 2007-06-20 Ｄｏｗａホールディングス株式会社 アルミニウム−セラミックス接合基板の製造方法
PT2348125T (pt) 2002-10-30 2017-08-29 Nuevolution As Método para a síntese de um complexo bifuncional
AU2003291964A1 (en) 2002-12-19 2004-07-14 Nuevolution A/S Quasirandom structure and function guided synthesis methods
US20070026397A1 (en) 2003-02-21 2007-02-01 Nuevolution A/S Method for producing second-generation library
DE10335538A1 (de) * 2003-07-31 2005-02-24 Sicrystal Ag Verfahren und Vorrichtung zur AIN-Einkristall-Herstellung mit gasdurchlässiger Tiegelwand
EP1670939B1 (de) 2003-09-18 2009-11-04 Nuevolution A/S Methode zur Gewinnung struktureller Informationen kodierter Moleküle und zur Selektion von Verbindungen
US7087112B1 (en) * 2003-12-02 2006-08-08 Crystal Is, Inc. Nitride ceramics to mount aluminum nitride seed for sublimation growth
WO2005095681A1 (ja) * 2004-03-31 2005-10-13 Matsushita Electric Industrial Co., Ltd. Iii族元素窒化物結晶の製造方法、それに用いる製造装置、およびそれらにより得られた半導体素子
US7294199B2 (en) * 2004-06-10 2007-11-13 Sumitomo Electric Industries, Ltd. Nitride single crystal and producing method thereof
DE602004027361D1 (de) * 2004-06-30 2010-07-08 Sumitomo Electric Industries Verfahren zur Herstellung eines AlN-Einkristalles
JP4608970B2 (ja) * 2004-07-01 2011-01-12 住友電気工業株式会社 窒化物単結晶の製造方法
KR101077323B1 (ko) 2004-07-07 2011-10-26 스미토모덴키고교가부시키가이샤 질화물단결정 및 그 제조방법
JP4558584B2 (ja) * 2004-07-08 2010-10-06 日本碍子株式会社 窒化アルミニウム単結晶の製造方法
CN100447310C (zh) * 2004-07-15 2008-12-31 住友电气工业株式会社 氮化物单晶和其生产方法
JP4780720B2 (ja) * 2004-09-16 2011-09-28 日本碍子株式会社 ＡｌＮ単結晶の製造方法およびＡｌＮ単結晶
JP4603498B2 (ja) * 2005-03-14 2010-12-22 株式会社リコー Ｉｉｉ族窒化物結晶の製造方法及び製造装置
EP1775356A3 (de) * 2005-10-14 2009-12-16 Ricoh Company, Ltd. Kristallziehungsvorrichtung und Verfahren zur Herstellung von Gruppe-III-Nitrid Kristallen
EP1960570A2 (de) 2005-11-28 2008-08-27 Crystal Is, Inc. Grosse aluminiumnitridkristalle mit reduzierten defekten und herstellungsverfahren dafür
HUE056836T2 (hu) 2005-12-01 2022-03-28 Nuevolution As Enzimatikus kódolási eljárások nagy könyvtárak hatékony szintéziséhez
JP5281408B2 (ja) 2005-12-02 2013-09-04 クリスタル・イズ，インコーポレイテッド ドープされた窒化アルミニウム結晶及びそれを製造する方法
US9034103B2 (en) 2006-03-30 2015-05-19 Crystal Is, Inc. Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them
EP2007933B1 (de) 2006-03-30 2017-05-10 Crystal Is, Inc. Verfahren zur gesteuerten dotierung von aluminiumnitrid-massenkristallen
US9771666B2 (en) 2007-01-17 2017-09-26 Crystal Is, Inc. Defect reduction in seeded aluminum nitride crystal growth
US8323406B2 (en) 2007-01-17 2012-12-04 Crystal Is, Inc. Defect reduction in seeded aluminum nitride crystal growth
US8080833B2 (en) 2007-01-26 2011-12-20 Crystal Is, Inc. Thick pseudomorphic nitride epitaxial layers
CN101652832B (zh) 2007-01-26 2011-06-22 晶体公司 厚的赝晶氮化物外延层
US8088220B2 (en) * 2007-05-24 2012-01-03 Crystal Is, Inc. Deep-eutectic melt growth of nitride crystals
JP5257959B2 (ja) * 2009-04-24 2013-08-07 独立行政法人産業技術総合研究所 窒化アルミニウム単結晶の製造装置、窒化アルミニウム単結晶の製造方法
US20100314551A1 (en) * 2009-06-11 2010-12-16 Bettles Timothy J In-line Fluid Treatment by UV Radiation
WO2012003304A1 (en) 2010-06-30 2012-01-05 Crystal Is, Inc. Growth of large aluminum nitride single crystals with thermal-gradient control
US8962359B2 (en) 2011-07-19 2015-02-24 Crystal Is, Inc. Photon extraction from nitride ultraviolet light-emitting devices
US20140227527A1 (en) 2011-09-29 2014-08-14 Nitride Solutions Inc. Inorganic materials, methods and apparatus for making same, and uses thereof
JP6042545B2 (ja) 2012-08-23 2016-12-14 国立大学法人東京農工大学 高透明性窒化アルミニウム単結晶層、及びこれからなる素子
US9299883B2 (en) 2013-01-29 2016-03-29 Hexatech, Inc. Optoelectronic devices incorporating single crystalline aluminum nitride substrate
JP2016520992A (ja) 2013-03-14 2016-07-14 ヘクサテック，インコーポレイテッド 窒化アルミニウム単結晶基板を組込んだパワー半導体デバイス
JP6275817B2 (ja) 2013-03-15 2018-02-07 クリスタル アイエス, インコーポレーテッドCrystal Is, Inc. 仮像電子及び光学電子装置に対する平面コンタクト
US10060046B2 (en) * 2014-09-19 2018-08-28 Corner Star Limited Crystal puller for inhibiting melt contamination
CN109652859B (zh) * 2018-12-27 2024-04-26 北京大学东莞光电研究院 一种光气耦合晶体生长装置
CN111188091B (zh) * 2020-02-17 2021-09-03 山东大学 一种用于电阻法氮化铝晶体生长炉的热场及其装配方法

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Also Published As

Publication number Publication date
EP1226291B1 (de) 2009-03-11
EP1226291A4 (de) 2007-05-02
KR100588424B1 (ko) 2006-06-09
US5954874A (en) 1999-09-21
CN1174124C (zh) 2004-11-03
EP1226291A1 (de) 2002-07-31
KR20020034163A (ko) 2002-05-08
CN1361834A (zh) 2002-07-31
US6066205A (en) 2000-05-23
WO2001007690A1 (en) 2001-02-01

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