ATE528421T1 - Verfahren zur herstellung von gruppe-iii- metallnitrid-materialien - Google Patents

Verfahren zur herstellung von gruppe-iii- metallnitrid-materialien

Info

Publication number
ATE528421T1
ATE528421T1 AT01998673T AT01998673T ATE528421T1 AT E528421 T1 ATE528421 T1 AT E528421T1 AT 01998673 T AT01998673 T AT 01998673T AT 01998673 T AT01998673 T AT 01998673T AT E528421 T1 ATE528421 T1 AT E528421T1
Authority
AT
Austria
Prior art keywords
group iii
iii metal
produce
crystal
nitride materials
Prior art date
Application number
AT01998673T
Other languages
English (en)
Inventor
Jerome Cuomo
N Williams
Eric Carlson
Andrew Hanser
Darin Thomas
Original Assignee
Univ North Carolina State
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ North Carolina State filed Critical Univ North Carolina State
Application granted granted Critical
Publication of ATE528421T1 publication Critical patent/ATE528421T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/08—Epitaxial-layer growth by condensing ionised vapours
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0063—Reactive sputtering characterised by means for introducing or removing gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/354—Introduction of auxiliary energy into the plasma
    • C23C14/355—Introduction of auxiliary energy into the plasma using electrons, e.g. triode sputtering
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/002—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/002—Controlling or regulating
    • C30B23/005—Controlling or regulating flux or flow of depositing species or vapour
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2921—Materials being crystalline insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3216—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
  • Recrystallisation Techniques (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
AT01998673T 2000-11-30 2001-11-30 Verfahren zur herstellung von gruppe-iii- metallnitrid-materialien ATE528421T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US25029700P 2000-11-30 2000-11-30
US25033700P 2000-11-30 2000-11-30
PCT/US2001/044930 WO2002044443A1 (en) 2000-11-30 2001-11-30 Methods and apparatus for producing m'n based materials

Publications (1)

Publication Number Publication Date
ATE528421T1 true ATE528421T1 (de) 2011-10-15

Family

ID=26940767

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01998673T ATE528421T1 (de) 2000-11-30 2001-11-30 Verfahren zur herstellung von gruppe-iii- metallnitrid-materialien

Country Status (7)

Country Link
US (2) US6692568B2 (de)
EP (1) EP1346085B1 (de)
JP (1) JP4184789B2 (de)
KR (1) KR100831751B1 (de)
AT (1) ATE528421T1 (de)
AU (2) AU2002219978A1 (de)
WO (2) WO2002044444A1 (de)

Families Citing this family (188)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5679152A (en) * 1994-01-27 1997-10-21 Advanced Technology Materials, Inc. Method of making a single crystals Ga*N article
IL159165A0 (en) * 2001-06-06 2004-06-01 Ammono Sp Zoo Process and apparatus for obtaining bulk monocrystalline gallium containing nitride
JP3758537B2 (ja) * 2001-07-23 2006-03-22 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体の製造方法
PL225235B1 (pl) * 2001-10-26 2017-03-31 Ammono Spółka Z Ograniczoną Odpowiedzialnością Objętościowy monokryształ azotkowy oraz jego zastosowanie jako podłoże do epitaksji
EP1453158A4 (de) * 2001-10-26 2007-09-19 Ammono Sp Zoo Nitridhalbleiterlaserelement und herstellungsverfahren dafür
US7125453B2 (en) * 2002-01-31 2006-10-24 General Electric Company High temperature high pressure capsule for processing materials in supercritical fluids
US6958572B2 (en) * 2002-02-06 2005-10-25 Ut-Battelle Llc Controlled non-normal alignment of catalytically grown nanostructures in a large-scale synthesis process
US8236103B2 (en) * 2002-02-15 2012-08-07 Showa Denko K.K. Group III nitride semiconductor crystal, production method thereof and group III nitride semiconductor epitaxial wafer
US7063741B2 (en) * 2002-03-27 2006-06-20 General Electric Company High pressure high temperature growth of crystalline group III metal nitrides
FR2839505B1 (fr) * 2002-05-07 2005-07-15 Univ Claude Bernard Lyon Procede pour modifier les proprietes d'une couche mince et substrat faisant application du procede
US20060138431A1 (en) * 2002-05-17 2006-06-29 Robert Dwilinski Light emitting device structure having nitride bulk single crystal layer
WO2003097906A1 (en) 2002-05-17 2003-11-27 Ammono Sp.Zo.O. Bulk single crystal production facility employing supercritical ammonia
AU2002354467A1 (en) 2002-05-17 2003-12-02 Ammono Sp.Zo.O. Light emitting element structure having nitride bulk single crystal layer
US6699760B2 (en) 2002-06-25 2004-03-02 Lucent Technologies, Inc. Method for growing layers of group III-nitride semiconductor having electrically passivated threading defects
CN100339512C (zh) * 2002-06-26 2007-09-26 波兰商艾蒙诺公司 获得大单晶含镓氮化物的方法的改进
US6858521B2 (en) * 2002-12-31 2005-02-22 Samsung Electronics Co., Ltd. Method for fabricating spaced-apart nanostructures
US7012266B2 (en) 2002-08-23 2006-03-14 Samsung Electronics Co., Ltd. MEMS-based two-dimensional e-beam nano lithography device and method for making the same
AU2003302019A1 (en) 2002-08-23 2004-06-15 The Regents Of The University Of California Improved microscale vacuum tube device and method for making same
WO2005004196A2 (en) * 2002-08-23 2005-01-13 Sungho Jin Article comprising gated field emission structures with centralized nanowires and method for making the same
US7811380B2 (en) * 2002-12-11 2010-10-12 Ammono Sp. Z O.O. Process for obtaining bulk mono-crystalline gallium-containing nitride
AU2003285769A1 (en) 2002-12-11 2004-06-30 Ammono Sp. Z O.O. A substrate for epitaxy and a method of preparing the same
US7001791B2 (en) * 2003-04-14 2006-02-21 University Of Florida GaN growth on Si using ZnO buffer layer
US7083993B2 (en) * 2003-04-15 2006-08-01 Luminus Devices, Inc. Methods of making multi-layer light emitting devices
DE10325549A1 (de) * 2003-06-05 2005-01-13 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum Erzeugen einer relaxierten Halbleiterschicht auf einem Halbleitersubstrat
US7170095B2 (en) * 2003-07-11 2007-01-30 Cree Inc. Semi-insulating GaN and method of making the same
JP4158646B2 (ja) * 2003-08-06 2008-10-01 トヨタ自動車株式会社 自動車フロントグリル及びその製造方法
US7052546B1 (en) * 2003-08-28 2006-05-30 Cape Simulations, Inc. High-purity crystal growth
US7122827B2 (en) 2003-10-15 2006-10-17 General Electric Company Monolithic light emitting devices based on wide bandgap semiconductor nanostructures and methods for making same
JP2005129666A (ja) * 2003-10-22 2005-05-19 Canon Inc 処理方法及び装置
US7323256B2 (en) * 2003-11-13 2008-01-29 Cree, Inc. Large area, uniformly low dislocation density GaN substrate and process for making the same
JP2005175028A (ja) * 2003-12-09 2005-06-30 Canon Inc プラズマ処理方法およびプラズマ処理装置
US7033912B2 (en) * 2004-01-22 2006-04-25 Cree, Inc. Silicon carbide on diamond substrates and related devices and methods
WO2005071720A1 (en) * 2004-01-26 2005-08-04 Showa Denko K.K. Group iii nitride semiconductor multilayer structure
US7612390B2 (en) * 2004-02-05 2009-11-03 Cree, Inc. Heterojunction transistors including energy barriers
JP2009091245A (ja) * 2004-03-23 2009-04-30 Sumitomo Electric Ind Ltd 窒化ガリウム基板及びエピタキシャル基板
CN1938457B (zh) * 2004-03-31 2011-11-30 日本碍子株式会社 氮化镓单晶的生长方法和氮化镓单晶
US7348076B2 (en) 2004-04-08 2008-03-25 Saint-Gobain Ceramics & Plastics, Inc. Single crystals and methods for fabricating same
PL1769105T3 (pl) * 2004-06-11 2014-11-28 Ammono S A Objętościowy monokrystaliczny azotek galu oraz sposób jego wytwarzania
US7855823B2 (en) * 2004-06-30 2010-12-21 Panasonic Corporation Acoustooptic device and optical imaging apparatus using the same
TWI408263B (zh) * 2004-07-01 2013-09-11 住友電氣工業股份有限公司 ＡｌｘＧａｙＩｎ１-ｘ-ｙＮ基板、ＡｌｘＧａｙＩｎ１-ｘ-ｙＮ基板之清潔方法、ＡｌＮ基板及ＡｌＮ基板之清潔方法
JP2008511985A (ja) * 2004-08-31 2008-04-17 エージェンシー フォー サイエンス，テクノロジー アンド リサーチ ナノ構造体及びそれを製造する方法
US7294324B2 (en) * 2004-09-21 2007-11-13 Cree, Inc. Low basal plane dislocation bulk grown SiC wafers
JP2006096588A (ja) * 2004-09-28 2006-04-13 Sumitomo Electric Ind Ltd 窒化ガリウム独立基板を製造する方法
KR100664986B1 (ko) * 2004-10-29 2007-01-09 삼성전기주식회사 나노로드를 이용한 질화물계 반도체 소자 및 그 제조 방법
PL371405A1 (pl) * 2004-11-26 2006-05-29 Ammono Sp.Z O.O. Sposób wytwarzania objętościowych monokryształów metodą wzrostu na zarodku
US7926440B1 (en) 2004-11-27 2011-04-19 Etamota Corporation Nanostructure synthesis apparatus and method
US7704324B2 (en) * 2005-01-25 2010-04-27 General Electric Company Apparatus for processing materials in supercritical fluids and methods thereof
US7919815B1 (en) * 2005-02-24 2011-04-05 Saint-Gobain Ceramics & Plastics, Inc. Spinel wafers and methods of preparation
US7687787B2 (en) * 2005-03-15 2010-03-30 Varian Semiconductor Equipment Associates, Inc. Profile adjustment in plasma ion implanter
CN101203933B (zh) * 2005-03-15 2010-05-19 瓦里安半导体设备公司 等离子体离子植入中的轮廓调整
US7422634B2 (en) * 2005-04-07 2008-09-09 Cree, Inc. Three inch silicon carbide wafer with low warp, bow, and TTV
US20090163384A1 (en) * 2007-12-22 2009-06-25 Lucent Technologies, Inc. Detection apparatus for biological materials and methods of making and using the same
US7276424B2 (en) * 2005-06-29 2007-10-02 Hewlett-Packard Development Company, L.P. Fabrication of aligned nanowire lattices
EP1739210B1 (de) * 2005-07-01 2012-03-07 Freiberger Compound Materials GmbH Verfahren zur Herstellung von dotierten Halbleiter-Einkristallen, und III-V-Halbleiter-Einkristall
US8946674B2 (en) * 2005-08-31 2015-02-03 University Of Florida Research Foundation, Inc. Group III-nitrides on Si substrates using a nanostructured interlayer
KR100707166B1 (ko) * 2005-10-12 2007-04-13 삼성코닝 주식회사 ＧａＮ 기판의 제조방법
CN100349264C (zh) * 2005-10-25 2007-11-14 西安电子科技大学 GaN基化合物材料上原位淀积高介电常数Al2O3和金属膜的方法
CN100370584C (zh) * 2005-10-25 2008-02-20 西安电子科技大学 GaAs基材料上原位淀积高介电常数Al2O3和金属膜的方法
CN100349265C (zh) * 2005-10-25 2007-11-14 西安电子科技大学 磷化铟材料上原位淀积高介电常数三氧化二铝和金属膜的方法
US7897490B2 (en) * 2005-12-12 2011-03-01 Kyma Technologies, Inc. Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancement
US8039412B2 (en) * 2005-12-20 2011-10-18 Momentive Performance Materials Inc. Crystalline composition, device, and associated method
US7935382B2 (en) * 2005-12-20 2011-05-03 Momentive Performance Materials, Inc. Method for making crystalline composition
US7942970B2 (en) * 2005-12-20 2011-05-17 Momentive Performance Materials Inc. Apparatus for making crystalline composition
GB2433648A (en) * 2005-12-21 2007-06-27 Durham Scient Crystals Ltd Radiation detector formed by deposition of bulk semiconductor crystal layers
GB2433447A (en) * 2005-12-21 2007-06-27 Durham Scient Crystals Ltd Bulk single crystal material and method of growth
JP5662001B2 (ja) * 2005-12-21 2015-01-28 クロメック リミテッド 半導体デバイス及びその製造方法
GB2435715A (en) * 2005-12-21 2007-09-05 Durham Scient Crystals Ltd Vapour phase epitaxial growth of thick II-VI semiconductor crystals
KR100695118B1 (ko) * 2005-12-27 2007-03-14 삼성코닝 주식회사 다중-프리스탠딩 ＧａＮ 웨이퍼의 제조방법
US7592211B2 (en) * 2006-01-17 2009-09-22 Cree, Inc. Methods of fabricating transistors including supported gate electrodes
US7709269B2 (en) 2006-01-17 2010-05-04 Cree, Inc. Methods of fabricating transistors including dielectrically-supported gate electrodes
JP4187175B2 (ja) 2006-03-13 2008-11-26 国立大学法人東北大学 窒化ガリウム系材料の製造方法
JP4647525B2 (ja) * 2006-03-20 2011-03-09 日本碍子株式会社 Ｉｉｉ族窒化物結晶の製造方法
GB2436398B (en) * 2006-03-23 2011-08-24 Univ Bath Growth method using nanostructure compliant layers and HVPE for producing high quality compound semiconductor materials
US8357243B2 (en) * 2008-06-12 2013-01-22 Sixpoint Materials, Inc. Method for testing group III-nitride wafers and group III-nitride wafers with test data
US20070240631A1 (en) * 2006-04-14 2007-10-18 Applied Materials, Inc. Epitaxial growth of compound nitride semiconductor structures
JP4983087B2 (ja) * 2006-04-27 2012-07-25 富士通セミコンダクター株式会社 成膜方法、半導体装置の製造方法、コンピュータ可読記録媒体、スパッタ処理装置
JP2009536605A (ja) * 2006-05-08 2009-10-15 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア アルミニウムを含むｉｉｉ族窒化物半導体化合物の成長方法及び材料。
US7879697B2 (en) * 2006-06-05 2011-02-01 Regents Of The University Of Minnesota Growth of low dislocation density Group-III nitrides and related thin-film structures
TW200806829A (en) * 2006-07-20 2008-02-01 Univ Nat Central Method for producing single crystal gallium nitride substrate
US7915624B2 (en) 2006-08-06 2011-03-29 Lightwave Photonics, Inc. III-nitride light-emitting devices with one or more resonance reflectors and reflective engineered growth templates for such devices, and methods
WO2008020599A1 (fr) 2006-08-18 2008-02-21 Showa Denko K.K. Procédé de fabrication d'un dispositif électroluminescent comportant un semi-conducteur formé d'un nitrure du groupe iii, dispositif électroluminescent correspondant et lampe
US8222057B2 (en) * 2006-08-29 2012-07-17 University Of Florida Research Foundation, Inc. Crack free multilayered devices, methods of manufacture thereof and articles comprising the same
JP5272361B2 (ja) * 2006-10-20 2013-08-28 豊田合成株式会社 スパッタ成膜装置およびスパッタ成膜装置用のバッキングプレート
US20080092819A1 (en) * 2006-10-24 2008-04-24 Applied Materials, Inc. Substrate support structure with rapid temperature change
WO2008061085A1 (en) * 2006-11-10 2008-05-22 University Of South Carolina Selectively doped semi-conductors and methods of making the same
JP5125098B2 (ja) * 2006-12-26 2013-01-23 信越半導体株式会社 窒化物半導体自立基板の製造方法
CN101681813B (zh) 2007-01-12 2012-07-11 昆南诺股份有限公司 氮化物纳米线及其制造方法
US7544591B2 (en) * 2007-01-18 2009-06-09 Hewlett-Packard Development Company, L.P. Method of creating isolated electrodes in a nanowire-based device
GB0701069D0 (en) 2007-01-19 2007-02-28 Univ Bath Nanostructure template and production of semiconductors using the template
KR100865767B1 (ko) 2007-03-15 2008-10-28 우진선행기술 주식회사 기판 슬림화 장치 및 기판 슬림화 방법
US20080314311A1 (en) * 2007-06-24 2008-12-25 Burrows Brian H Hvpe showerhead design
EP2171748A1 (de) 2007-07-26 2010-04-07 S.O.I.Tec Silicon on Insulator Technologies Epitaktische verfahren und damit gezüchtete templates
WO2009015337A1 (en) 2007-07-26 2009-01-29 S.O.I.Tec Silicon On Insulator Technologies Methods for producing improved epitaxial materials
US8652947B2 (en) 2007-09-26 2014-02-18 Wang Nang Wang Non-polar III-V nitride semiconductor and growth method
US8118934B2 (en) 2007-09-26 2012-02-21 Wang Nang Wang Non-polar III-V nitride material and production method
JP2009081406A (ja) * 2007-09-27 2009-04-16 Showa Denko Kk Ｉｉｉ族窒化物半導体発光素子及びその製造方法、並びにランプ
US7670933B1 (en) 2007-10-03 2010-03-02 Sandia Corporation Nanowire-templated lateral epitaxial growth of non-polar group III nitrides
US7745315B1 (en) 2007-10-03 2010-06-29 Sandia Corporation Highly aligned vertical GaN nanowires using submonolayer metal catalysts
US20090149008A1 (en) * 2007-10-05 2009-06-11 Applied Materials, Inc. Method for depositing group iii/v compounds
JP5272390B2 (ja) * 2007-11-29 2013-08-28 豊田合成株式会社 Ｉｉｉ族窒化物半導体の製造方法、ｉｉｉ族窒化物半導体発光素子の製造方法、及びｉｉｉ族窒化物半導体発光素子、並びにランプ
US20090194026A1 (en) * 2008-01-31 2009-08-06 Burrows Brian H Processing system for fabricating compound nitride semiconductor devices
JP2009190936A (ja) * 2008-02-14 2009-08-27 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物結晶の製造方法
WO2009108733A2 (en) 2008-02-25 2009-09-03 Lightwave Photonics, Inc. Current-injecting/tunneling light-emitting device and method
WO2009108700A1 (en) * 2008-02-25 2009-09-03 Sixpoint Materials, Inc. Method for producing group iii nitride wafers and group iii nitride wafers
KR20110018890A (ko) * 2008-05-06 2011-02-24 키마 테크놀로지스, 인코포레이티드 제ｉｉｉ족 질화물 주형 및 관련된 헤테로구조체, 장치, 및 그들의 제조 방법
US7994027B2 (en) * 2008-05-09 2011-08-09 George Mason Intellectual Properties, Inc. Microwave heating for semiconductor nanostructure fabrication
JP2009283785A (ja) * 2008-05-23 2009-12-03 Showa Denko Kk Ｉｉｉ族窒化物半導体積層構造体およびその製造方法
EP3330413B1 (de) * 2008-06-04 2020-09-09 SixPoint Materials, Inc. Verfahren zur züchtung von gruppe-iii-nitrid-kristallen mithilfe eines hochdruckgefässes
WO2009149299A1 (en) * 2008-06-04 2009-12-10 Sixpoint Materials Methods for producing improved crystallinty group iii-nitride crystals from initial group iii-nitride seed by ammonothermal growth
US8263951B2 (en) * 2008-06-13 2012-09-11 Fablab Inc. System and method for fabricating macroscopic objects, and nano-assembled objects obtained therewith
GB2460898B (en) 2008-06-19 2012-10-10 Wang Nang Wang Production of semiconductor material and devices using oblique angle etched templates
US8329295B2 (en) 2008-07-11 2012-12-11 Freiberger Compound Materials Gmbh Process for producing doped gallium arsenide substrate wafers having low optical absorption coefficient
US8486771B2 (en) * 2008-09-24 2013-07-16 Soitec Methods of forming relaxed layers of semiconductor materials, semiconductor structures, devices and engineered substrates including same
WO2010045567A1 (en) * 2008-10-16 2010-04-22 Sixpoint Materials, Inc. Reactor design for growing group iii nitride crystals and method of growing group iii nitride crystals
KR101408475B1 (ko) * 2008-10-30 2014-06-19 소이텍 감소된 격자 변형을 갖는 반도체 재료층들, 반도체 구조들, 디바이스들 및 이를 포함하는 가공된 기판을 형성하는 방법들
US8637383B2 (en) 2010-12-23 2014-01-28 Soitec Strain relaxation using metal materials and related structures
US8852341B2 (en) * 2008-11-24 2014-10-07 Sixpoint Materials, Inc. Methods for producing GaN nutrient for ammonothermal growth
US20100139554A1 (en) * 2008-12-08 2010-06-10 Applied Materials, Inc. Methods and apparatus for making gallium nitride and gallium aluminum nitride thin films
TWI398558B (zh) * 2009-03-11 2013-06-11 國立中山大學 氮化鎵立體磊晶結構及其製作方法
US20100273291A1 (en) * 2009-04-28 2010-10-28 Applied Materials, Inc. Decontamination of mocvd chamber using nh3 purge after in-situ cleaning
US20110079251A1 (en) * 2009-04-28 2011-04-07 Olga Kryliouk Method for in-situ cleaning of deposition systems
JP2012525718A (ja) * 2009-04-29 2012-10-22 アプライド マテリアルズ インコーポレイテッド ＨＶＰＥにおいてその場プレ−ＧａＮ堆積層を形成する方法
WO2010129718A2 (en) 2009-05-05 2010-11-11 Sixpoint Materials, Inc. Growth reactor for gallium-nitride crystals using ammonia and hydrogen chloride
US8507304B2 (en) * 2009-07-17 2013-08-13 Applied Materials, Inc. Method of forming a group III-nitride crystalline film on a patterned substrate by hydride vapor phase epitaxy (HVPE)
US8148241B2 (en) * 2009-07-31 2012-04-03 Applied Materials, Inc. Indium surfactant assisted HVPE of high quality gallium nitride and gallium nitride alloy films
US20110027973A1 (en) * 2009-07-31 2011-02-03 Applied Materials, Inc. Method of forming led structures
US20110104843A1 (en) * 2009-07-31 2011-05-05 Applied Materials, Inc. Method of reducing degradation of multi quantum well (mqw) light emitting diodes
CN102414801A (zh) 2009-08-27 2012-04-11 应用材料公司 在原位腔室清洁后的处理腔室去污方法
US20110064545A1 (en) * 2009-09-16 2011-03-17 Applied Materials, Inc. Substrate transfer mechanism with preheating features
EP2484816B1 (de) * 2009-09-28 2015-03-11 Tokuyama Corporation Verfahren zur herstellung eines laminats
US20110076400A1 (en) * 2009-09-30 2011-03-31 Applied Materials, Inc. Nanocrystalline diamond-structured carbon coating of silicon carbide
US20110081771A1 (en) * 2009-10-07 2011-04-07 Applied Materials, Inc. Multichamber split processes for led manufacturing
CN102597340B (zh) * 2009-11-10 2015-04-08 株式会社德山 叠层体的制造方法
US20110117376A1 (en) * 2009-11-17 2011-05-19 Mingwei Zhu Method of Gallium Nitride growth over metallic substrate using Vapor Phase Epitaxy
US20110140071A1 (en) * 2009-12-14 2011-06-16 Olga Kryliouk Nano-spherical group iii-nitride materials
US8716049B2 (en) * 2010-02-23 2014-05-06 Applied Materials, Inc. Growth of group III-V material layers by spatially confined epitaxy
US20110204376A1 (en) * 2010-02-23 2011-08-25 Applied Materials, Inc. Growth of multi-junction led film stacks with multi-chambered epitaxy system
US8765501B2 (en) 2010-03-01 2014-07-01 Applied Materials, Inc. Formation of group III-V material layers on patterned substrates
WO2011137967A1 (de) * 2010-05-04 2011-11-10 Oerlikon Trading Ag, Trübbach Verfahren zum funkenverdampfen mit keramischen targets
US20120049151A1 (en) * 2010-08-30 2012-03-01 Invenlux Corporation Light-emitting devices with two-dimensional composition-fluctuation active-region and method for fabricating the same
US9076827B2 (en) 2010-09-14 2015-07-07 Applied Materials, Inc. Transfer chamber metrology for improved device yield
US9023721B2 (en) 2010-11-23 2015-05-05 Soitec Methods of forming bulk III-nitride materials on metal-nitride growth template layers, and structures formed by such methods
FR2968831B1 (fr) 2010-12-08 2012-12-21 Soitec Silicon On Insulator Procedes de formation de materiaux massifs de nitrure iii sur des couches matricielles de croissance de nitrure de metal et structures formees par ces procedes
US8409895B2 (en) 2010-12-16 2013-04-02 Applied Materials, Inc. Gallium nitride-based LED fabrication with PVD-formed aluminum nitride buffer layer
US8980002B2 (en) 2011-05-20 2015-03-17 Applied Materials, Inc. Methods for improved growth of group III nitride semiconductor compounds
US8778783B2 (en) 2011-05-20 2014-07-15 Applied Materials, Inc. Methods for improved growth of group III nitride buffer layers
US8853086B2 (en) 2011-05-20 2014-10-07 Applied Materials, Inc. Methods for pretreatment of group III-nitride depositions
JP2012106907A (ja) * 2011-08-11 2012-06-07 Sumitomo Electric Ind Ltd ＧａＮ系膜の製造方法
JP2012106906A (ja) * 2011-08-11 2012-06-07 Sumitomo Electric Ind Ltd ＧａＮ系膜の製造方法
US9112048B2 (en) 2011-08-17 2015-08-18 Ramgoss Inc. Vertical field effect transistor on oxide semiconductor substrate
KR20140082738A (ko) 2011-09-29 2014-07-02 니트라이드 솔루션즈 인크. 무기 물질, 이를 제조하기 위한 방법 및 장치, 및 이의 용도
CN102560676B (zh) * 2012-01-18 2014-08-06 山东大学 一种使用减薄键合结构进行GaN单晶生长的方法
JP5885521B2 (ja) 2012-02-01 2016-03-15 三菱電機株式会社 炭化珪素半導体装置の製造方法
US9653286B2 (en) 2012-02-14 2017-05-16 Hexagem Ab Gallium nitride nanowire based electronics
DE102012203421A1 (de) * 2012-03-05 2013-09-05 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Halbleiterbauelement mit einer orientierten Schicht undVerfahren zu seiner Herstellung
US20140008660A1 (en) * 2012-03-14 2014-01-09 Lightwave Photonics, Inc. Materials, structures, and methods for optical and electrical iii-nitride semiconductor devices
DE102012103686B4 (de) 2012-04-26 2021-07-08 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Epitaxiesubstrat, Verfahren zur Herstellung eines Epitaxiesubstrats und optoelektronischer Halbleiterchip mit einem Epitaxiesubstrat
US8796097B2 (en) 2012-04-26 2014-08-05 University Of South Carolina Selectively area regrown III-nitride high electron mobility transistor
CN102828239B (zh) * 2012-08-24 2015-02-18 东莞市中镓半导体科技有限公司 一种通过缺陷应力去除技术自分离氮化镓单晶材料制备自支撑衬底的方法
CN102828251B (zh) * 2012-09-10 2015-02-18 中国科学院半导体研究所 氮化铝单晶材料制备方法
FR2997420B1 (fr) 2012-10-26 2017-02-24 Commissariat Energie Atomique Procede de croissance d'au moins un nanofil a partir d'une couche d'un metal de transition nitrure obtenue en deux etapes
FR2997557B1 (fr) 2012-10-26 2016-01-01 Commissariat Energie Atomique Dispositif electronique a nanofil(s) muni d'une couche tampon en metal de transition, procede de croissance d'au moins un nanofil, et procede de fabrication d'un dispositif
US9051638B2 (en) 2013-03-01 2015-06-09 Poole Ventura, Inc. In-situ sputtering apparatus
US9929310B2 (en) 2013-03-14 2018-03-27 Applied Materials, Inc. Oxygen controlled PVD aluminum nitride buffer for gallium nitride-based optoelectronic and electronic devices
DE102013103602A1 (de) * 2013-04-10 2014-10-16 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zu seiner Herstellung
US9312446B2 (en) * 2013-05-31 2016-04-12 Ngk Insulators, Ltd. Gallium nitride self-supported substrate, light-emitting device and manufacturing method therefor
JP6227128B2 (ja) * 2013-06-07 2017-11-08 グロ アーベーＧｌｏ Ａｂ マルチカラーｌｅｄ及びその製造方法
RU2543212C2 (ru) * 2013-07-02 2015-02-27 Юрий Георгиевич Шретер Способ выращивания эпитаксиальной пленки нитрида третьей группы на ростовой подложке
US9863903B2 (en) * 2013-08-01 2018-01-09 Honeywell International Inc. Condensation sensor systems and methods
US9574135B2 (en) * 2013-08-22 2017-02-21 Nanoco Technologies Ltd. Gas phase enhancement of emission color quality in solid state LEDs
WO2015047300A1 (en) * 2013-09-27 2015-04-02 Intel Corporation Forming led structures on silicon fins
CN108305923B (zh) * 2014-03-31 2020-09-15 日本碍子株式会社 多晶氮化镓自立基板和使用该多晶氮化镓自立基板的发光元件
DE102014109335A1 (de) * 2014-07-03 2016-01-07 Aixtron Se Verfahren zum Abscheiden säulenförmiger Strukturen
CN104178807A (zh) * 2014-08-06 2014-12-03 上海世山科技有限公司 一种利用热分解特性获得自支撑氮化镓基板的方法
US9928997B2 (en) 2014-12-14 2018-03-27 Applied Materials, Inc. Apparatus for PVD dielectric deposition
US10263144B2 (en) 2015-10-16 2019-04-16 Robbie J. Jorgenson System and method for light-emitting devices on lattice-matched metal substrates
JP6365992B2 (ja) * 2016-03-25 2018-08-01 パナソニックＩｐマネジメント株式会社 Ｉｉｉ族窒化物結晶製造方法及びｒａｍｏ４基板
KR102383837B1 (ko) 2016-05-26 2022-04-07 로비 조젠슨 3a족 질화물 성장 시스템 및 방법
US11047650B2 (en) 2017-09-29 2021-06-29 Saint-Gobain Ceramics & Plastics, Inc. Transparent composite having a laminated structure
KR102520379B1 (ko) * 2017-10-05 2023-04-10 헥사겜 아베 평면의 iii-n 반도체 층을 갖는 반도체 디바이스 및 제작 방법
CN109870863B (zh) * 2019-04-15 2021-06-11 哈尔滨工业大学 一种可通过电压调节等效发射率的热控皮肤及其在航天器中的应用
CN113161442B (zh) * 2021-04-22 2022-10-14 合肥工业大学 一种硅肖特基结线阵列近红外光电探测器
CN113668044B (zh) * 2021-07-14 2024-03-15 威科赛乐微电子股份有限公司 一种单晶再生长方法
WO2023214993A2 (en) * 2021-10-22 2023-11-09 The Regents Of The University Of Michigan Semiconductor heterostructures with quaternary iii-nitride alloy
US11688588B1 (en) * 2022-02-09 2023-06-27 Velvetch Llc Electron bias control signals for electron enhanced material processing
CN115787078B (zh) * 2022-12-22 2024-08-13 电子科技大学 一种高质量的错配层化合物的制备方法
US11869747B1 (en) 2023-01-04 2024-01-09 Velvetch Llc Atomic layer etching by electron wavefront
CN120581428A (zh) * 2025-06-05 2025-09-02 苏州晶和半导体科技有限公司 一种外延衬底结构的制备方法以及相关结构

Family Cites Families (72)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3600218A (en) 1968-05-15 1971-08-17 Ibm Method for depositing insulating films of silicon nitride and aluminum nitride
US3609471A (en) 1969-07-22 1971-09-28 Gen Electric Semiconductor device with thermally conductive dielectric barrier
US3716759A (en) 1970-10-12 1973-02-13 Gen Electric Electronic device with thermally conductive dielectric barrier
DE3167761D1 (en) 1980-01-16 1985-01-31 Nat Res Dev Method and apparatus for depositing coatings in a glow discharge
US4727047A (en) 1980-04-10 1988-02-23 Massachusetts Institute Of Technology Method of producing sheets of crystalline material
JPS5940227B2 (ja) * 1980-06-24 1984-09-28 富士通株式会社 リアクティブスパッタリング方法
JPS5816078A (ja) 1981-07-17 1983-01-29 Toshiba Corp プラズマエツチング装置
US4407712A (en) 1982-06-01 1983-10-04 The United States Of America As Represented By The Secretary Of The Army Hollow cathode discharge source of metal vapor
JPS59141498A (ja) * 1983-01-31 1984-08-14 Natl Res Inst For Metals モリブデン巨大粒または単結晶及びその製造法
US4521286A (en) 1983-03-09 1985-06-04 Unisearch Limited Hollow cathode sputter etcher
US4588490A (en) 1985-05-22 1986-05-13 International Business Machines Corporation Hollow cathode enhanced magnetron sputter device
US4637853A (en) 1985-07-29 1987-01-20 International Business Machines Corporation Hollow cathode enhanced plasma for high rate reactive ion etching and deposition
US4959136A (en) 1986-09-17 1990-09-25 Eastman Kodak Company Method for making an amorphous aluminum-nitrogen alloy layer
JPS63307254A (ja) 1987-06-08 1988-12-14 Matsushita Electric Ind Co Ltd 酸化物薄膜作製装置
US5573742A (en) 1987-10-29 1996-11-12 Martin Marietta Corporation Method for the preparation of high purity aluminum nitride
US4824544A (en) 1987-10-29 1989-04-25 International Business Machines Corporation Large area cathode lift-off sputter deposition device
US4963239A (en) 1988-01-29 1990-10-16 Hitachi, Ltd. Sputtering process and an apparatus for carrying out the same
US4915805A (en) 1988-11-21 1990-04-10 At&T Bell Laboratories Hollow cathode type magnetron apparatus construction
DE3844064A1 (de) 1988-12-28 1990-07-05 Leybold Ag Katodenzerstaeubungsvorrichtung nach dem magnetron-prinzip mit einer hohlkatode und einem zylindrischen target
US4985742A (en) 1989-07-07 1991-01-15 University Of Colorado Foundation, Inc. High temperature semiconductor devices having at least one gallium nitride layer
US5234560A (en) 1989-08-14 1993-08-10 Hauzer Holdings Bv Method and device for sputtering of films
GB9006073D0 (en) 1990-03-17 1990-05-16 D G Teer Coating Services Limi Magnetron sputter ion plating
US5073245A (en) 1990-07-10 1991-12-17 Hedgcoth Virgle L Slotted cylindrical hollow cathode/magnetron sputtering device
US5290393A (en) 1991-01-31 1994-03-01 Nichia Kagaku Kogyo K.K. Crystal growth method for gallium nitride-based compound semiconductor
WO1992016966A1 (en) * 1991-03-18 1992-10-01 Boston University A method for the preparation and doping of highly insulating monocrystalline gallium nitride thin films
US5228963A (en) 1991-07-01 1993-07-20 Himont Incorporated Hollow-cathode magnetron and method of making thin films
US5306662A (en) 1991-11-08 1994-04-26 Nichia Chemical Industries, Ltd. Method of manufacturing P-type compound semiconductor
US5270263A (en) * 1991-12-20 1993-12-14 Micron Technology, Inc. Process for depositing aluminum nitride (AlN) using nitrogen plasma sputtering
PL173917B1 (pl) 1993-08-10 1998-05-29 Ct Badan Wysokocisnieniowych P Sposób wytwarzania krystalicznej struktury wielowarstwowej
US5393993A (en) 1993-12-13 1995-02-28 Cree Research, Inc. Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices
US5587014A (en) 1993-12-22 1996-12-24 Sumitomo Chemical Company, Limited Method for manufacturing group III-V compound semiconductor crystals
JPH07202265A (ja) * 1993-12-27 1995-08-04 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物半導体の製造方法
US5679152A (en) 1994-01-27 1997-10-21 Advanced Technology Materials, Inc. Method of making a single crystals Ga*N article
US6440823B1 (en) 1994-01-27 2002-08-27 Advanced Technology Materials, Inc. Low defect density (Ga, Al, In)N and HVPE process for making same
US5838029A (en) 1994-08-22 1998-11-17 Rohm Co., Ltd. GaN-type light emitting device formed on a silicon substrate
US5914059A (en) * 1995-05-01 1999-06-22 United Technologies Corporation Method of repairing metallic articles by energy beam deposition with reduced power density
GB2318590B (en) 1995-07-10 1999-04-14 Cvc Products Inc Magnetron cathode apparatus and method for sputtering
US5882538A (en) * 1995-08-28 1999-03-16 Georgia Tech Research Corporation Method and apparatus for low energy electron enhanced etching of substrates
JP3409958B2 (ja) 1995-12-15 2003-05-26 株式会社東芝 半導体発光素子
JP2925004B2 (ja) 1996-03-22 1999-07-26 日本電気株式会社 窒化ガリウムの結晶成長方法
JP3879173B2 (ja) 1996-03-25 2007-02-07 住友電気工業株式会社 化合物半導体気相成長方法
JP3164016B2 (ja) 1996-05-31 2001-05-08 住友電気工業株式会社 発光素子および発光素子用ウエハの製造方法
US6020602A (en) * 1996-09-10 2000-02-01 Kabushiki Kaisha Toshba GaN based optoelectronic device and method for manufacturing the same
US5858086A (en) 1996-10-17 1999-01-12 Hunter; Charles Eric Growth of bulk single crystals of aluminum nitride
US5954874A (en) 1996-10-17 1999-09-21 Hunter; Charles Eric Growth of bulk single crystals of aluminum nitride from a melt
US5868837A (en) 1997-01-17 1999-02-09 Cornell Research Foundation, Inc. Low temperature method of preparing GaN single crystals
US6429402B1 (en) * 1997-01-24 2002-08-06 The Regents Of The University Of California Controlled laser production of elongated articles from particulates
EP0874405A3 (de) 1997-03-25 2004-09-15 Mitsubishi Cable Industries, Ltd. Element auf Basis von GaN mit niedriger Versetzungsdichte, seine Verwendung und Herstellungsverfahren
CA2258080C (en) 1997-04-11 2007-06-05 Nichia Chemical Industries, Ltd. Nitride semiconductor growth method, nitride semiconductor substrate, and nitride semiconductor device
PL186905B1 (pl) 1997-06-05 2004-03-31 Cantrum Badan Wysokocisnieniow Sposób wytwarzania wysokooporowych kryształów objętościowych GaN
US6270569B1 (en) 1997-06-11 2001-08-07 Hitachi Cable Ltd. Method of fabricating nitride crystal, mixture, liquid phase growth method, nitride crystal, nitride crystal powders, and vapor phase growth method
WO1999001594A1 (en) 1997-07-03 1999-01-14 Cbl Technologies Thermal mismatch compensation to produce free standing substrates by epitaxial deposition
US5915194A (en) 1997-07-03 1999-06-22 The United States Of America As Represented By The Administrator Of National Aeronautics And Space Administration Method for growth of crystal surfaces and growth of heteroepitaxial single crystal films thereon
US6071795A (en) 1998-01-23 2000-06-06 The Regents Of The University Of California Separation of thin films from transparent substrates by selective optical processing
JPH11209199A (ja) 1998-01-26 1999-08-03 Sumitomo Electric Ind Ltd ＧａＮ単結晶の合成方法
US6265289B1 (en) 1998-06-10 2001-07-24 North Carolina State University Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby
US6218280B1 (en) * 1998-06-18 2001-04-17 University Of Florida Method and apparatus for producing group-III nitrides
TW417315B (en) 1998-06-18 2001-01-01 Sumitomo Electric Industries GaN single crystal substrate and its manufacture method of the same
US6045612A (en) 1998-07-07 2000-04-04 Cree, Inc. Growth of bulk single crystals of aluminum nitride
US6252261B1 (en) 1998-09-30 2001-06-26 Nec Corporation GaN crystal film, a group III element nitride semiconductor wafer and a manufacturing process therefor
US6063185A (en) 1998-10-09 2000-05-16 Cree, Inc. Production of bulk single crystals of aluminum nitride, silicon carbide and aluminum nitride: silicon carbide alloy
US6288417B1 (en) 1999-01-07 2001-09-11 Xerox Corporation Light-emitting devices including polycrystalline gan layers and method of forming devices
US6177688B1 (en) 1998-11-24 2001-01-23 North Carolina State University Pendeoepitaxial gallium nitride semiconductor layers on silcon carbide substrates
US6255198B1 (en) 1998-11-24 2001-07-03 North Carolina State University Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby
US6372041B1 (en) 1999-01-08 2002-04-16 Gan Semiconductor Inc. Method and apparatus for single crystal gallium nitride (GaN) bulk synthesis
US6140669A (en) 1999-02-20 2000-10-31 Ohio University Gallium nitride doped with rare earth ions and method and structure for achieving visible light emission
US6426512B1 (en) * 1999-03-05 2002-07-30 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor device
US6406540B1 (en) 1999-04-27 2002-06-18 The United States Of America As Represented By The Secretary Of The Air Force Process and apparatus for the growth of nitride materials
US6290774B1 (en) 1999-05-07 2001-09-18 Cbl Technology, Inc. Sequential hydride vapor phase epitaxy
DE19929591A1 (de) 1999-06-28 2001-01-04 Max Planck Gesellschaft Herstellung von epitaktischen GaN-Schichten auf Substraten
JP4145437B2 (ja) 1999-09-28 2008-09-03 住友電気工業株式会社 単結晶ＧａＮの結晶成長方法及び単結晶ＧａＮ基板の製造方法と単結晶ＧａＮ基板
US6398867B1 (en) 1999-10-06 2002-06-04 General Electric Company Crystalline gallium nitride and method for forming crystalline gallium nitride

Also Published As

Publication number Publication date
WO2002044444A1 (en) 2002-06-06
AU2002219966A1 (en) 2002-06-11
EP1346085B1 (de) 2011-10-12
AU2002219978A1 (en) 2002-06-11
WO2002044443A1 (en) 2002-06-06
JP2004523450A (ja) 2004-08-05
EP1346085A4 (de) 2008-04-02
KR20030059299A (ko) 2003-07-07
KR100831751B1 (ko) 2008-05-23
US20020078881A1 (en) 2002-06-27
US6692568B2 (en) 2004-02-17
EP1346085A1 (de) 2003-09-24
US6784085B2 (en) 2004-08-31
US20020086534A1 (en) 2002-07-04
JP4184789B2 (ja) 2008-11-19

Similar Documents

Publication Publication Date Title
ATE528421T1 (de) Verfahren zur herstellung von gruppe-iii- metallnitrid-materialien
WO2002043466A3 (en) Non-thermionic sputter material transport device, methods of use, and materials produced thereby
WO2003036698A3 (en) Method of depositing high-quality sige on sige substrates
WO2004017365A3 (en) Deposition of amorphous silicon-containing films
TW200501451A (en) Growth of III-nitride films on mismatched substrates without conventional low temperature nucleation layers
TW200605194A (en) Method and apparatus of distributed plasma processing system for conformal ion stimulated nanoscale deposition process
DE502004003173D1 (de) Verfahren zur herstellung von substraten mit temperaturbeständigen schutzschichten
WO2007018555A3 (en) Ultratough cvd single crystal diamond and three dimensional growth thereof
ATE522637T1 (de) Verfahren zur herstellung eines sputtertargets
EP0838536A3 (de) Verfahren und Vorrichtung zum Abscheiden hochorientierter und reflektierender kristalliner Schichten
ATE308629T1 (de) Verfahren zur herstellung eines pvd al2o3 beschichteten schneidwerkzeugs
GB2372635B (en) Method of fabricating group-III nitride semiconductor crystals.
Higuchi et al. Selected area diamond deposition by control of the nucleation sites
EP1170397A3 (de) Abscheidung amorpher Siliziumschichten bei niedrigen Temperaturen mittels CVD mit hoher Plasmadichte
US5296119A (en) Defect-induced control of the structure of boron nitride
Tanabe et al. Effects of Ar ion beam bombardment on the formation of cubic BN in IBED
US20110223332A1 (en) Method for depositing cubic boron nitride thin film
CA2182245A1 (en) Process for Depositing Adherent Diamond Thin Films
DE3771897D1 (de) Verfahren zur herstellung von strukturierten epitaxialen schichten auf einem substrat.
JPH08144045A (ja) 立方晶窒化ホウ素被覆部材
Robinson The effects of a glow discharge on the nucleation characteristics of gold on polymer substrates
CN112670159B (zh) 一种铪基AlN厚膜及其制备方法
JPH05279854A (ja) ダイヤモンド膜の形成方法
JPS5817257B2 (ja) ホウ素被膜形成方法
Lu et al. Carbon nitride films synthesized by the reactive ionized cluster beam technique

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties