ATE426189T1 - Positive strahlungsempfindliche harzzusammensetzung - Google Patents

Positive strahlungsempfindliche harzzusammensetzung

Info

Publication number
ATE426189T1
ATE426189T1 AT06111812T AT06111812T ATE426189T1 AT E426189 T1 ATE426189 T1 AT E426189T1 AT 06111812 T AT06111812 T AT 06111812T AT 06111812 T AT06111812 T AT 06111812T AT E426189 T1 ATE426189 T1 AT E426189T1
Authority
AT
Austria
Prior art keywords
photoacid generator
resin composition
excimer laser
sensitive resin
radiation sensitive
Prior art date
Application number
AT06111812T
Other languages
English (en)
Inventor
Takayuki Tsuji
Tomoki Nagai
Kentarou Harada
Daisuke Shimizu
Original Assignee
Jsr Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jsr Corp filed Critical Jsr Corp
Application granted granted Critical
Publication of ATE426189T1 publication Critical patent/ATE426189T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
AT06111812T 2005-03-29 2006-03-28 Positive strahlungsempfindliche harzzusammensetzung ATE426189T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005093385 2005-03-29

Publications (1)

Publication Number Publication Date
ATE426189T1 true ATE426189T1 (de) 2009-04-15

Family

ID=37070938

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06111812T ATE426189T1 (de) 2005-03-29 2006-03-28 Positive strahlungsempfindliche harzzusammensetzung

Country Status (6)

Country Link
US (1) US7488566B2 (de)
EP (1) EP1840650B1 (de)
JP (1) JP4665810B2 (de)
AT (1) ATE426189T1 (de)
DE (1) DE602006005786D1 (de)
IL (1) IL174569A (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101264482B1 (ko) * 2008-05-30 2013-05-14 히타치가세이가부시끼가이샤 감광성 수지 조성물, 감광성 엘리먼트, 레지스트 패턴의 형성 방법 및 프린트 배선판의 제조방법
CN102207678B (zh) * 2010-01-25 2015-05-20 罗门哈斯电子材料有限公司 包含含氮化合物的光致抗蚀剂
JP7204343B2 (ja) 2017-06-06 2023-01-16 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP7414407B2 (ja) * 2018-06-13 2024-01-16 住友化学株式会社 カルボン酸塩、カルボン酸発生剤、レジスト組成物及びレジストパターンの製造方法
JP7285144B2 (ja) * 2018-06-28 2023-06-01 住友化学株式会社 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法
JP7475111B2 (ja) * 2018-11-14 2024-04-26 東京応化工業株式会社 レジストパターン形成方法、レジスト組成物及びその製造方法
US20200356001A1 (en) * 2019-05-10 2020-11-12 Rohm And Haas Electronic Materials Llc Photoresist compositions and methods of forming resist patterns with such compositions
US11852972B2 (en) 2020-10-30 2023-12-26 Rohm And Haas Electronic Materials Llc Photoresist compositions and pattern formation methods

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3215562B2 (ja) 1993-10-21 2001-10-09 信越化学工業株式会社 溶解阻害剤、その合成方法並びにそれを含有するレジスト材料
JP3082892B2 (ja) 1994-05-23 2000-08-28 日本電信電話株式会社 ポジ型レジスト材料
JP3661721B2 (ja) * 1996-10-15 2005-06-22 信越化学工業株式会社 化学増幅ポジ型レジスト材料
JP4007569B2 (ja) * 1999-09-06 2007-11-14 富士フイルム株式会社 ポジ型電子線又はｘ線レジスト組成物
JP4910238B2 (ja) * 2001-03-06 2012-04-04 Ｊｓｒ株式会社 化学増幅型感放射線性樹脂組成物
JP3988517B2 (ja) * 2001-04-27 2007-10-10 Ｊｓｒ株式会社 感放射線性樹脂組成物
US6824954B2 (en) * 2001-08-23 2004-11-30 Jsr Corporation Sulfonyloxime compound, and radiation sensitive acid generator, positive type radiation sensitive resin composition and negative type radiation sensitive resin composition using same
JP4192610B2 (ja) * 2002-11-18 2008-12-10 Ｊｓｒ株式会社 感放射線性樹脂組成物
JP3991222B2 (ja) * 2003-02-13 2007-10-17 信越化学工業株式会社 新規スルホニルジアゾメタン化合物、光酸発生剤、並びにそれを用いたレジスト材料及びパターン形成方法
JP4360264B2 (ja) * 2004-04-30 2009-11-11 Ｊｓｒ株式会社 ポジ型感放射線性樹脂組成物
JP4544085B2 (ja) * 2004-09-28 2010-09-15 Ｊｓｒ株式会社 ポジ型感放射線性樹脂組成物
EP1686424A3 (de) * 2005-01-27 2009-11-04 JSR Corporation Strahlungsempfindliche Harzzusammensetzung

Also Published As

Publication number Publication date
EP1840650B1 (de) 2009-03-18
US20060223010A1 (en) 2006-10-05
EP1840650A1 (de) 2007-10-03
DE602006005786D1 (de) 2009-04-30
IL174569A (en) 2010-11-30
US7488566B2 (en) 2009-02-10
JP2006309186A (ja) 2006-11-09
JP4665810B2 (ja) 2011-04-06
IL174569A0 (en) 2006-08-20

Similar Documents

Publication Publication Date Title
US9405187B2 (en) Salt, acid generator and resist composition
EP1480079A8 (de) Photoempfindliche Harzzusammensetzung
US20120052443A1 (en) Resist composition and method for producing resist pattern
TW200710576A (en) Positive resist composition and method of pattern formation with the same
ATE315245T1 (de) Strahlungsempfindliche harzzusammensetzung
TWI585143B (zh) 圖案形成方法、感光化射線性樹脂組成物、感放射線性樹脂組成物、抗蝕劑膜及電子元件的製造方法
EP0535653A1 (de) Lichtempfindliche Zusammensetzung
JP2001183837A5 (de)
ATE521016T1 (de) Verwendung einer positiven resist-zusammensetzung für immersions-lithographie, positive resist- zusammensetzung und immersions-lithographische strukturierungsmethode mit benutzung derselbigen
JP2011252145A (ja) 重合体及びレジスト組成物
JP2013235251A (ja) レジスト組成物及びレジストパターンの製造方法
JPH08160606A (ja) 化学増幅ポジ型レジスト材料
JP2002303980A5 (de)
ATE426189T1 (de) Positive strahlungsempfindliche harzzusammensetzung
JP2012230363A (ja) レジスト組成物及びレジストパターンの製造方法
US8663899B2 (en) Resist composition and method for producing resist pattern
KR20050074509A (ko) 감방사선성 수지 조성물
EP1343048A3 (de) Anthracenderivate und strahlungsempfindliche Harzzusammensetzung
JP2005099556A (ja) ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP2000019737A5 (de)
JP5286236B2 (ja) 感活性光線性又は感放射線性樹脂組成物、それを用いて形成した膜及びそれを用いたパターン形成方法
TW200513800A (en) Radiation-sensitive polymer composition and pattern forming method using the same
JPH11327145A5 (de)
JP2012001711A (ja) 化合物、樹脂及びレジスト組成物
US7132218B2 (en) Chemically amplified positive resist composition

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties