ATE521016T1 - Verwendung einer positiven resist-zusammensetzung für immersions-lithographie, positive resist- zusammensetzung und immersions-lithographische strukturierungsmethode mit benutzung derselbigen - Google Patents

Verwendung einer positiven resist-zusammensetzung für immersions-lithographie, positive resist- zusammensetzung und immersions-lithographische strukturierungsmethode mit benutzung derselbigen

Info

Publication number
ATE521016T1
ATE521016T1 AT06017164T AT06017164T ATE521016T1 AT E521016 T1 ATE521016 T1 AT E521016T1 AT 06017164 T AT06017164 T AT 06017164T AT 06017164 T AT06017164 T AT 06017164T AT E521016 T1 ATE521016 T1 AT E521016T1
Authority
AT
Austria
Prior art keywords
resist composition
positive resist
acid
immersion
same
Prior art date
Application number
AT06017164T
Other languages
English (en)
Inventor
Haruki Inabe
Hiromi Kanda
Kunihiko Kodama
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Application granted granted Critical
Publication of ATE521016T1 publication Critical patent/ATE521016T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/122—Sulfur compound containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/126—Halogen compound containing

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
AT06017164T 2005-08-19 2006-08-17 Verwendung einer positiven resist-zusammensetzung für immersions-lithographie, positive resist- zusammensetzung und immersions-lithographische strukturierungsmethode mit benutzung derselbigen ATE521016T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005238734A JP4695941B2 (ja) 2005-08-19 2005-08-19 液浸露光用ポジ型レジスト組成物及びそれを用いたパターン形成方法

Publications (1)

Publication Number Publication Date
ATE521016T1 true ATE521016T1 (de) 2011-09-15

Family

ID=37708127

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06017164T ATE521016T1 (de) 2005-08-19 2006-08-17 Verwendung einer positiven resist-zusammensetzung für immersions-lithographie, positive resist- zusammensetzung und immersions-lithographische strukturierungsmethode mit benutzung derselbigen

Country Status (6)

Country Link
US (2) US7803511B2 (de)
EP (1) EP1764647B1 (de)
JP (1) JP4695941B2 (de)
KR (1) KR101435470B1 (de)
AT (1) ATE521016T1 (de)
TW (1) TWI453540B (de)

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JP6106985B2 (ja) * 2011-08-22 2017-04-05 住友化学株式会社 レジスト組成物及び塩
JP6007913B2 (ja) * 2011-09-30 2016-10-19 Jsr株式会社 フォトレジスト組成物及びレジストパターン形成方法
JP5740287B2 (ja) * 2011-11-09 2015-06-24 富士フイルム株式会社 パターン形成方法、及び、電子デバイスの製造方法
JP5703247B2 (ja) 2012-03-02 2015-04-15 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、フォトマスクブランクス、及び、パターン形成方法
JP5856991B2 (ja) * 2012-05-21 2016-02-10 富士フイルム株式会社 化学増幅型レジスト組成物、ネガ型化学増幅型レジスト組成物、それを用いたレジスト膜、レジスト塗布マスクブランクス、フォトマスクの製造方法及びパターン形成方法、並びに、電子デバイスの製造方法
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Also Published As

Publication number Publication date
TW200722926A (en) 2007-06-16
EP1764647A2 (de) 2007-03-21
US20100310991A1 (en) 2010-12-09
KR101435470B1 (ko) 2014-08-28
JP2007052346A (ja) 2007-03-01
JP4695941B2 (ja) 2011-06-08
TWI453540B (zh) 2014-09-21
US8808975B2 (en) 2014-08-19
US20070042290A1 (en) 2007-02-22
US7803511B2 (en) 2010-09-28
EP1764647A3 (de) 2007-07-18
EP1764647B1 (de) 2011-08-17
KR20070021974A (ko) 2007-02-23

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