ATE426250T1 - Verfahren zum entfernen von kurzschluss- abschnitten einer solarzelle - Google Patents

Verfahren zum entfernen von kurzschluss- abschnitten einer solarzelle

Info

Publication number
ATE426250T1
ATE426250T1 AT04077491T AT04077491T ATE426250T1 AT E426250 T1 ATE426250 T1 AT E426250T1 AT 04077491 T AT04077491 T AT 04077491T AT 04077491 T AT04077491 T AT 04077491T AT E426250 T1 ATE426250 T1 AT E426250T1
Authority
AT
Austria
Prior art keywords
solar cell
pseudo
voltage
cell element
wave
Prior art date
Application number
AT04077491T
Other languages
English (en)
Inventor
Katsuhiko Hayashi
Masataka Kondo
Original Assignee
Kaneka Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP11079078A external-priority patent/JP3049241B1/ja
Priority claimed from JP11079077A external-priority patent/JP3050546B1/ja
Application filed by Kaneka Corp filed Critical Kaneka Corp
Application granted granted Critical
Publication of ATE426250T1 publication Critical patent/ATE426250T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/135—Application of a bias; Current injection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S136/00—Batteries: thermoelectric and photoelectric
    • Y10S136/29—Testing, calibrating, treating, e.g. aging

Landscapes

  • Photovoltaic Devices (AREA)
AT04077491T 1999-03-24 1999-07-01 Verfahren zum entfernen von kurzschluss- abschnitten einer solarzelle ATE426250T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP11079078A JP3049241B1 (ja) 1999-03-24 1999-03-24 太陽電池の短絡部除去方法
JP11079077A JP3050546B1 (ja) 1999-03-24 1999-03-24 太陽電池の短絡部除去方法

Publications (1)

Publication Number Publication Date
ATE426250T1 true ATE426250T1 (de) 2009-04-15

Family

ID=26420146

Family Applications (2)

Application Number Title Priority Date Filing Date
AT04077491T ATE426250T1 (de) 1999-03-24 1999-07-01 Verfahren zum entfernen von kurzschluss- abschnitten einer solarzelle
AT99305189T ATE281699T1 (de) 1999-03-24 1999-07-01 Verfahren zum entfernen von kurzschluss- abschnitten einer solarzelle

Family Applications After (1)

Application Number Title Priority Date Filing Date
AT99305189T ATE281699T1 (de) 1999-03-24 1999-07-01 Verfahren zum entfernen von kurzschluss- abschnitten einer solarzelle

Country Status (6)

Country Link
US (1) US6228662B1 (de)
EP (2) EP1494294B1 (de)
AT (2) ATE426250T1 (de)
AU (1) AU763332B2 (de)
DE (2) DE69921607T2 (de)
ES (2) ES2324100T3 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU766466B2 (en) * 1999-05-14 2003-10-16 Kaneka Corporation Reverse biasing apparatus for solar battery module
JP2004241618A (ja) * 2003-02-06 2004-08-26 Canon Inc 光起電力素子の製造方法
JP2006013403A (ja) * 2004-06-29 2006-01-12 Sanyo Electric Co Ltd 太陽電池、太陽電池モジュール、その製造方法およびその修復方法
JP5062684B2 (ja) * 2008-02-13 2012-10-31 シャープ株式会社 薄膜光電変換モジュールの製造方法および製造装置
JP5186552B2 (ja) * 2008-03-31 2013-04-17 株式会社アルバック 太陽電池の製造方法および太陽電池の製造装置
WO2010091025A2 (en) * 2009-02-04 2010-08-12 Applied Materials, Inc. Metrology and inspection suite for a solar production line
TWI387113B (zh) * 2009-02-05 2013-02-21 聯相光電股份有限公司 薄膜太陽能電池模組及其修補方法
TWI419350B (zh) * 2009-02-06 2013-12-11 財團法人工業技術研究院 太陽能電池模組修復裝置與修復方法
JP5476641B2 (ja) * 2009-09-03 2014-04-23 株式会社日本マイクロニクス 電池短絡部除去装置及び方法、並びに、電池短絡部除去電圧決定装置及び方法
US8164818B2 (en) 2010-11-08 2012-04-24 Soladigm, Inc. Electrochromic window fabrication methods
US20120288968A1 (en) * 2011-05-12 2012-11-15 Ming-Teng Hsieh Method for repairing a semiconductor structure having a current-leakage issue
US9885934B2 (en) 2011-09-14 2018-02-06 View, Inc. Portable defect mitigators for electrochromic windows
US9507232B2 (en) 2011-09-14 2016-11-29 View, Inc. Portable defect mitigator for electrochromic windows
US9341912B2 (en) 2012-03-13 2016-05-17 View, Inc. Multi-zone EC windows
ES2683188T3 (es) 2012-03-13 2018-09-25 View, Inc. Mitigación estenopeica para dispositivos ópticos
HK1208403A1 (en) 2012-05-18 2016-03-04 View, Inc. Circumscribing defects in optical devices
CN103456831B (zh) * 2012-06-01 2015-11-18 上海宇航系统工程研究所 低轨等离子体环境高压太阳电池阵弧光放电抑制方法
ITMI20130482A1 (it) * 2013-03-29 2014-09-30 St Microelectronics Srl Dispositivo elettronico integrato per il monitoraggio di pressione all'interno di una struttura solida
GB2565337A (en) * 2017-08-10 2019-02-13 Power Roll Ltd Energy storage
DE102018001057B4 (de) * 2018-02-07 2025-12-04 Ce Cell Engineering Gmbh Verfahren zur Verbesserung des ohmschen Kontaktverhaltens zwischen einem Kontaktgitter und einer Emitterschicht einer Siliziumsolarzelle

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4166918A (en) 1978-07-19 1979-09-04 Rca Corporation Method of removing the effects of electrical shorts and shunts created during the fabrication process of a solar cell
JPS5683981A (en) 1979-12-13 1981-07-08 Matsushita Electric Ind Co Ltd Semiconductor device and manufacture
US4464823A (en) 1982-10-21 1984-08-14 Energy Conversion Devices, Inc. Method for eliminating short and latent short circuit current paths in photovoltaic devices
JPS5994468A (ja) 1982-11-19 1984-05-31 Sumitomo Electric Ind Ltd 薄膜電子装置の短絡部の除去方法
AU2042183A (en) 1983-08-03 1985-02-07 Energy Conversion Devices Inc. Eliminating short circuits in photovoltaic devices
JPS6185873A (ja) 1984-10-04 1986-05-01 Fuji Electric Co Ltd 薄膜半導体素子の製造方法
AU580903B2 (en) 1986-01-29 1989-02-02 Semiconductor Energy Laboratory Co. Ltd. Method for manufacturing photoelectric conversion devices
JPS6341081A (ja) 1986-08-07 1988-02-22 Fuji Electric Co Ltd 薄膜半導体装置の製造方法
JPS6388869A (ja) 1986-10-01 1988-04-19 Kanegafuchi Chem Ind Co Ltd アモルファス太陽電池のピンホール消滅装置
JPH0323677A (ja) 1989-06-20 1991-01-31 Semiconductor Energy Lab Co Ltd 半導体装置のリペア方法
US5281541A (en) * 1990-09-07 1994-01-25 Canon Kabushiki Kaisha Method for repairing an electrically short-circuited semiconductor device, and process for producing a semiconductor device utilizing said method
JP3740618B2 (ja) 1996-06-17 2006-02-01 株式会社カネカ 太陽電池の短絡部除去方法及び該短絡部除去装置
JP3755551B2 (ja) 1996-06-25 2006-03-15 株式会社カネカ 太陽電池の短絡部除去方法及び該短絡部除去装置

Also Published As

Publication number Publication date
EP1039553A3 (de) 2002-04-10
DE69921607D1 (de) 2004-12-09
ATE281699T1 (de) 2004-11-15
AU763332B2 (en) 2003-07-17
US6228662B1 (en) 2001-05-08
EP1039553A2 (de) 2000-09-27
EP1494294A2 (de) 2005-01-05
EP1494294B1 (de) 2009-03-18
ES2324100T3 (es) 2009-07-30
EP1494294A3 (de) 2006-04-05
DE69940618D1 (de) 2009-04-30
DE69921607T2 (de) 2005-11-10
ES2232083T3 (es) 2005-05-16
AU3684299A (en) 2000-09-28
EP1039553B1 (de) 2004-11-03

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