ATE365818T1 - Einkristalliner diamant - Google Patents

Einkristalliner diamant

Info

Publication number
ATE365818T1
ATE365818T1 AT03797475T AT03797475T ATE365818T1 AT E365818 T1 ATE365818 T1 AT E365818T1 AT 03797475 T AT03797475 T AT 03797475T AT 03797475 T AT03797475 T AT 03797475T AT E365818 T1 ATE365818 T1 AT E365818T1
Authority
AT
Austria
Prior art keywords
diamond
cvd
substrate
single crystalline
single crystal
Prior art date
Application number
AT03797475T
Other languages
English (en)
Inventor
Geoffrey Alan Scarsbrook
Philip Maurice Martineau
Daniel James Twitchen
Original Assignee
Element Six Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Element Six Ltd filed Critical Element Six Ltd
Application granted granted Critical
Publication of ATE365818T1 publication Critical patent/ATE365818T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
AT03797475T 2002-09-20 2003-09-19 Einkristalliner diamant ATE365818T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB0221949.1A GB0221949D0 (en) 2002-09-20 2002-09-20 Single crystal diamond

Publications (1)

Publication Number Publication Date
ATE365818T1 true ATE365818T1 (de) 2007-07-15

Family

ID=9944519

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03797475T ATE365818T1 (de) 2002-09-20 2003-09-19 Einkristalliner diamant

Country Status (16)

Country Link
US (3) US20040177803A1 (de)
EP (1) EP1543181B1 (de)
JP (3) JP4949627B2 (de)
KR (1) KR101078970B1 (de)
CN (5) CN101319361B (de)
AT (1) ATE365818T1 (de)
AU (1) AU2003263447A1 (de)
CA (1) CA2496710C (de)
DE (1) DE60314648T2 (de)
ES (1) ES2287565T3 (de)
GB (6) GB0221949D0 (de)
IL (1) IL166897A (de)
RU (1) RU2332532C2 (de)
TW (1) TWI323299B (de)
WO (1) WO2004027123A1 (de)
ZA (1) ZA200501294B (de)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
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EP1290251B8 (de) * 2000-06-15 2006-02-01 Element Six (PTY) Ltd Dicke einkristalline diamantschicht, verfahren zur herstellung der schicht und edelsteine hergestellt durch bearbeitung der schicht
CZ302228B6 (cs) 2000-06-15 2011-01-05 Element Six (Pty) Ltd Monokrystalická diamantová vrstva pripravená chemickým vylucováním z plynné fáze
GB0130004D0 (en) * 2001-12-14 2002-02-06 Diamanx Products Ltd Coloured diamond
GB0130005D0 (en) * 2001-12-14 2002-02-06 Diamanx Products Ltd Boron doped diamond
RU2328563C2 (ru) * 2002-09-06 2008-07-10 Элемент Сикс Лимитед Цветные алмазы
GB0221949D0 (en) 2002-09-20 2002-10-30 Diamanx Products Ltd Single crystal diamond
GB0227261D0 (en) 2002-11-21 2002-12-31 Element Six Ltd Optical quality diamond material
KR100683574B1 (ko) * 2004-10-19 2007-02-16 한국과학기술연구원 기하학적 형태의 다이아몬드 쉘 및 그 제조방법
JP5163920B2 (ja) * 2005-03-28 2013-03-13 住友電気工業株式会社 ダイヤモンド単結晶基板の製造方法及びダイヤモンド単結晶基板
WO2007029269A1 (en) * 2005-09-05 2007-03-15 Rajneesh Bhandari Synthesis of large homoepitaxial monocrystalline diamond
US9133566B2 (en) 2005-12-09 2015-09-15 Element Six Technologies Limited High crystalline quality synthetic diamond
JP2010517263A (ja) 2007-01-22 2010-05-20 エレメント シックス リミテッド ダイヤモンド電子デバイス及びそれらの製造方法
US8342164B2 (en) * 2008-05-09 2013-01-01 SCIO Diamond Technology Corporation Gemstone production from CVD diamond plate
JP4803464B2 (ja) * 2008-07-04 2011-10-26 独立行政法人産業技術総合研究所 単結晶ダイヤモンドの表面損傷の除去方法
GB0813491D0 (en) 2008-07-23 2008-08-27 Element Six Ltd Diamond Material
GB0813490D0 (en) * 2008-07-23 2008-08-27 Element Six Ltd Solid state material
US9157170B2 (en) 2009-12-21 2015-10-13 Element Six Technologies Limited Single crystal diamond material
GB2476306B (en) * 2009-12-21 2012-07-11 Element Six Ltd Single crystal diamond material
US9017633B2 (en) * 2010-01-18 2015-04-28 Element Six Technologies Limited CVD single crystal diamond material
GB201000768D0 (en) * 2010-01-18 2010-03-03 Element Six Ltd CVD single crystal diamond material
GB201021985D0 (en) 2010-12-24 2011-02-02 Element Six Ltd Dislocation engineering in single crystal synthetic diamond material
JP6360041B2 (ja) 2013-04-09 2018-07-18 住友電気工業株式会社 単結晶ダイヤモンドおよびダイヤモンド工具
GB201310212D0 (en) * 2013-06-07 2013-07-24 Element Six Ltd Post-synthesis processing of diamond and related super-hard materials
KR102392424B1 (ko) * 2014-07-22 2022-05-02 스미토모덴키고교가부시키가이샤 단결정 다이아몬드 및 그 제조 방법, 단결정 다이아몬드를 포함하는 공구, 및 단결정 다이아몬드를 포함하는 부품
JP6041229B2 (ja) * 2015-10-29 2016-12-07 住友電気工業株式会社 ダイヤモンド複合体、ダイヤモンド複合体の製造方法、及び単結晶ダイヤモンドの製造方法
JP6217949B2 (ja) * 2016-11-10 2017-10-25 住友電気工業株式会社 単結晶ダイヤモンド
EP3538689A1 (de) * 2016-11-10 2019-09-18 Element Six Technologies Limited Synthese von dickem einzelkristalldiamantmaterial durch chemische abscheidung aus der dampfphase
TWI706061B (zh) * 2017-04-26 2020-10-01 新加坡商二A 科技有限公司 大單晶鑽石及其生產方法
CN107675249B (zh) * 2017-09-08 2020-07-07 西安电子科技大学 单晶金刚石的扩径生长方法
ES2724214B2 (es) 2018-03-01 2020-01-15 Business Res And Diamonds S L Procedimiento para la obtencion de diamantes sinteticos a partir de la sacarosa y equipo para llevar a cabo dicho procedimiento
CN108360065A (zh) * 2018-04-12 2018-08-03 西安交通大学 一种生长单晶金刚石的方法及生长结构
CN108908762A (zh) * 2018-06-15 2018-11-30 西安碳星半导体科技有限公司 Cvd生长宝石级厚单晶金刚石切割方法
CN108754600A (zh) * 2018-06-26 2018-11-06 西安交通大学 一种拼接生长大面积单晶金刚石的方法
CN108677246A (zh) * 2018-06-26 2018-10-19 西安交通大学 一种横向搭桥拼接生长大面积单晶金刚石的方法
GB201811162D0 (en) 2018-07-06 2018-08-29 Element Six Tech Ltd Method of manufacture of single crystal synthetic diamond material
CN108977880A (zh) * 2018-08-29 2018-12-11 西安交通大学 一种交叉拼接生长大面积单晶金刚石的方法
GB201918883D0 (en) * 2019-12-19 2020-02-05 Element Six Tech Ltd Method for producing chemical vapour deposition diamond
CA3168480A1 (en) * 2020-01-20 2021-07-29 M7D Corporation Method of growing larger diamonds
GB2614521A (en) 2021-10-19 2023-07-12 Element Six Tech Ltd CVD single crystal diamond
GB2614522B (en) 2021-10-19 2024-04-03 Element Six Tech Ltd CVD single crystal diamond
GB202305972D0 (en) 2023-04-24 2023-06-07 Element Six Tech Ltd Method of manufacturing single crystal diamonds
GB2630986A (en) 2023-06-16 2024-12-18 Element Six Tech Ltd Single crystal diamond product
CN119800501B (zh) * 2024-12-31 2026-01-27 江苏超芯星半导体有限公司 一种单晶金刚石及其制备方法和用途

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JPH01103994A (ja) * 1987-10-16 1989-04-21 Sumitomo Electric Ind Ltd ダイヤモンドの単結晶成長方法
JP2571795B2 (ja) 1987-11-17 1997-01-16 住友電気工業株式会社 紫色ダイヤモンドおよびその製造方法
US5127983A (en) * 1989-05-22 1992-07-07 Sumitomo Electric Industries, Ltd. Method of producing single crystal of high-pressure phase material
US5360479A (en) * 1990-07-02 1994-11-01 General Electric Company Isotopically pure single crystal epitaxial diamond films and their preparation
US5614019A (en) * 1992-06-08 1997-03-25 Air Products And Chemicals, Inc. Method for the growth of industrial crystals
JPH0687691A (ja) * 1992-09-04 1994-03-29 Sumitomo Electric Ind Ltd ダイヤモンドの製造方法およびダイヤモンドの製造方法に使用するダイヤモンド単結晶基材
JPH06227895A (ja) * 1993-02-04 1994-08-16 Sumitomo Electric Ind Ltd ダイヤモンドの合成法
US5474021A (en) * 1992-09-24 1995-12-12 Sumitomo Electric Industries, Ltd. Epitaxial growth of diamond from vapor phase
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JP3314444B2 (ja) 1993-03-15 2002-08-12 住友電気工業株式会社 赤色ダイヤモンドおよび桃色ダイヤモンド
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JPH113994A (ja) 1997-06-11 1999-01-06 Miyazaki Oki Electric Co Ltd 突起構造の形成方法、ｌｄｄ構造の形成方法、配線形成方法、およびトレンチ形成方法
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CZ302228B6 (cs) * 2000-06-15 2011-01-05 Element Six (Pty) Ltd Monokrystalická diamantová vrstva pripravená chemickým vylucováním z plynné fáze
EP1290251B8 (de) * 2000-06-15 2006-02-01 Element Six (PTY) Ltd Dicke einkristalline diamantschicht, verfahren zur herstellung der schicht und edelsteine hergestellt durch bearbeitung der schicht
JP3968968B2 (ja) * 2000-07-10 2007-08-29 住友電気工業株式会社 単結晶ＧａＮ基板の製造方法
JP2002265296A (ja) * 2001-03-09 2002-09-18 Kobe Steel Ltd ダイヤモンド薄膜及びその製造方法
GB0130005D0 (en) * 2001-12-14 2002-02-06 Diamanx Products Ltd Boron doped diamond
GB0130004D0 (en) * 2001-12-14 2002-02-06 Diamanx Products Ltd Coloured diamond
RU2328563C2 (ru) * 2002-09-06 2008-07-10 Элемент Сикс Лимитед Цветные алмазы
GB0221949D0 (en) 2002-09-20 2002-10-30 Diamanx Products Ltd Single crystal diamond
GB0227261D0 (en) * 2002-11-21 2002-12-31 Element Six Ltd Optical quality diamond material

Also Published As

Publication number Publication date
CA2496710C (en) 2011-09-06
CN1681976B (zh) 2010-04-07
RU2332532C2 (ru) 2008-08-27
AU2003263447A1 (en) 2004-04-08
US20040177803A1 (en) 2004-09-16
CN101319359A (zh) 2008-12-10
HK1078906A1 (zh) 2006-03-24
GB2429215A (en) 2007-02-21
CN101319360B (zh) 2012-12-26
EP1543181B1 (de) 2007-06-27
JP4949627B2 (ja) 2012-06-13
JP2011168487A (ja) 2011-09-01
HK1127789A1 (en) 2009-10-09
KR20050067394A (ko) 2005-07-01
JP2010001215A (ja) 2010-01-07
GB2429213A (en) 2007-02-21
HK1127790A1 (zh) 2009-10-09
ES2287565T3 (es) 2007-12-16
GB0221949D0 (en) 2002-10-30
CN101319359B (zh) 2012-05-30
HK1127791A1 (en) 2009-10-09
JP2006508881A (ja) 2006-03-16
JP5312281B2 (ja) 2013-10-09
GB2409468B (en) 2007-03-28
US9518338B2 (en) 2016-12-13
CN101319361B (zh) 2011-06-29
CA2496710A1 (en) 2004-04-01
CN101319361A (zh) 2008-12-10
US9816202B2 (en) 2017-11-14
CN101319360A (zh) 2008-12-10
GB2409468A (en) 2005-06-29
GB2429212B (en) 2007-04-18
IL166897A (en) 2009-12-24
GB2429212A (en) 2007-02-21
GB0623781D0 (en) 2007-01-10
GB0623784D0 (en) 2007-01-10
EP1543181A1 (de) 2005-06-22
RU2005111972A (ru) 2006-12-10
CN1681976A (zh) 2005-10-12
US20170037539A1 (en) 2017-02-09
DE60314648D1 (de) 2007-08-09
GB0623783D0 (en) 2007-01-10
GB0508004D0 (en) 2005-05-25
DE60314648T2 (de) 2007-10-25
HK1127792A1 (en) 2009-10-09
KR101078970B1 (ko) 2011-11-01
JP5717518B2 (ja) 2015-05-13
GB2429214A (en) 2007-02-21
TW200422446A (en) 2004-11-01
CN101319358A (zh) 2008-12-10
CN101319358B (zh) 2012-01-25
ZA200501294B (en) 2006-11-29
US20080085233A1 (en) 2008-04-10
TWI323299B (en) 2010-04-11
WO2004027123A1 (en) 2004-04-01
GB2429213B (en) 2007-04-18
GB0623782D0 (en) 2007-01-10

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