ATE427563T1 - Hochproduzierbare sram-zellen in substraten mit hybrid-kristallorientierung - Google Patents

Hochproduzierbare sram-zellen in substraten mit hybrid-kristallorientierung

Info

Publication number
ATE427563T1
ATE427563T1 AT06777968T AT06777968T ATE427563T1 AT E427563 T1 ATE427563 T1 AT E427563T1 AT 06777968 T AT06777968 T AT 06777968T AT 06777968 T AT06777968 T AT 06777968T AT E427563 T1 ATE427563 T1 AT E427563T1
Authority
AT
Austria
Prior art keywords
transistors
pull
regions
pass
sram cell
Prior art date
Application number
AT06777968T
Other languages
English (en)
Inventor
Bruce Doris
Gregory Costrini
Oleg Gluschenkov
Meikei Leong
Nakgeuon Seong
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of ATE427563T1 publication Critical patent/ATE427563T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/903—FET configuration adapted for use as static memory cell
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/973—Substrate orientation

Landscapes

  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Transition And Organic Metals Composition Catalysts For Addition Polymerization (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
AT06777968T 2005-09-22 2006-07-25 Hochproduzierbare sram-zellen in substraten mit hybrid-kristallorientierung ATE427563T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/162,780 US7605447B2 (en) 2005-09-22 2005-09-22 Highly manufacturable SRAM cells in substrates with hybrid crystal orientation

Publications (1)

Publication Number Publication Date
ATE427563T1 true ATE427563T1 (de) 2009-04-15

Family

ID=37240213

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06777968T ATE427563T1 (de) 2005-09-22 2006-07-25 Hochproduzierbare sram-zellen in substraten mit hybrid-kristallorientierung

Country Status (9)

Country Link
US (1) US7605447B2 (de)
EP (1) EP1946375B1 (de)
JP (1) JP5039989B2 (de)
KR (1) KR101013083B1 (de)
CN (1) CN101268551A (de)
AT (1) ATE427563T1 (de)
DE (1) DE602006006088D1 (de)
TW (1) TW200721460A (de)
WO (1) WO2007039333A1 (de)

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US7531392B2 (en) * 2006-02-27 2009-05-12 International Business Machines Corporation Multi-orientation semiconductor-on-insulator (SOI) substrate, and method of fabricating same
US20090189227A1 (en) * 2008-01-25 2009-07-30 Toshiba America Electronic Components, Inc. Structures of sram bit cells
WO2010022971A1 (en) * 2008-08-29 2010-03-04 Advanced Micro Devices, Inc. Drive current adjustment for transistors formed in the same active region by locally providing embedded strain inducing semiconductor material in the active region
DE102008045034B4 (de) * 2008-08-29 2012-04-05 Advanced Micro Devices, Inc. Durchlassstromeinstellung für Transistoren, die im gleichen aktiven Gebiet hergestellt sind, durch lokales Vorsehen eines eingebetteten verformungsinduzierenden Halbleitermaterials in dem aktiven Gebiet
US8315084B2 (en) * 2010-03-10 2012-11-20 Taiwan Semiconductor Manufacturing Company, Ltd. Fully balanced dual-port memory cell
US20110235407A1 (en) * 2010-03-24 2011-09-29 Sun-Me Lim Semiconductor memory device and a method of manufacturing the same
US20120280324A1 (en) * 2010-11-03 2012-11-08 Texas Instruments Incorporated Sram structure and process with improved stability
CN102412252A (zh) * 2011-04-20 2012-04-11 上海华力微电子有限公司 一种局部化混合晶向应变硅cmos结构及其制备方法
CN102610573B (zh) * 2012-03-31 2014-04-02 上海华力微电子有限公司 一种提高静态随机存储器读出冗余度的方法
CN102683289B (zh) * 2012-05-04 2014-04-02 上海华力微电子有限公司 一种提高静态随机存储器写入冗余度的方法
CN102709252B (zh) * 2012-05-22 2014-11-05 上海华力微电子有限公司 一种提高静态随机存储器读出冗余度的方法
KR20140049356A (ko) 2012-10-17 2014-04-25 삼성전자주식회사 반도체 소자
KR102191215B1 (ko) 2013-12-20 2020-12-16 삼성전자주식회사 에스램 셀 및 그 제조 방법
CN104979293B (zh) * 2014-04-08 2018-05-04 中芯国际集成电路制造(上海)有限公司 一种半导体器件的制造方法
CN105097017A (zh) * 2014-05-20 2015-11-25 中芯国际集成电路制造(上海)有限公司 一种sram存储单元、sram存储器及其控制方法
US9251888B1 (en) 2014-09-15 2016-02-02 Taiwan Semiconductor Manufacturing Company, Ltd. SRAM cells with vertical gate-all-round MOSFETs
TWI571968B (zh) * 2014-11-20 2017-02-21 力晶科技股份有限公司 靜態隨機存取記憶體與其製造方法
US9859286B2 (en) * 2014-12-23 2018-01-02 International Business Machines Corporation Low-drive current FinFET structure for improving circuit density of ratioed logic in SRAM devices
TWI571970B (zh) * 2015-10-13 2017-02-21 力晶科技股份有限公司 靜態隨機存取記憶體及其製造方法
US11682450B2 (en) * 2021-07-15 2023-06-20 Taiwan Semiconductor Manufacturing Company, Ltd. SRAM performance optimization via transistor width and threshold voltage tuning

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JP3017860B2 (ja) * 1991-10-01 2000-03-13 株式会社東芝 半導体基体およびその製造方法とその半導体基体を用いた半導体装置
US5698893A (en) * 1995-01-03 1997-12-16 Motorola, Inc. Static-random-access memory cell with trench transistor and enhanced stability
JP2000232168A (ja) * 1999-02-10 2000-08-22 Sony Corp 半導体記憶装置
JP2002164445A (ja) * 2000-11-29 2002-06-07 Seiko Epson Corp 半導体記憶装置
JP2002368135A (ja) * 2001-06-12 2002-12-20 Hitachi Ltd 半導体記憶装置
JP3637299B2 (ja) * 2001-10-05 2005-04-13 松下電器産業株式会社 半導体記憶装置
US6967351B2 (en) * 2001-12-04 2005-11-22 International Business Machines Corporation Finfet SRAM cell using low mobility plane for cell stability and method for forming
US6642536B1 (en) * 2001-12-17 2003-11-04 Advanced Micro Devices, Inc. Hybrid silicon on insulator/bulk strained silicon technology
JP4294935B2 (ja) * 2002-10-17 2009-07-15 株式会社ルネサステクノロジ 半導体装置
US7183611B2 (en) * 2003-06-03 2007-02-27 Micron Technology, Inc. SRAM constructions, and electronic systems comprising SRAM constructions
US7329923B2 (en) 2003-06-17 2008-02-12 International Business Machines Corporation High-performance CMOS devices on hybrid crystal oriented substrates
US6815278B1 (en) 2003-08-25 2004-11-09 International Business Machines Corporation Ultra-thin silicon-on-insulator and strained-silicon-direct-on-insulator with hybrid crystal orientations
US6934182B2 (en) * 2003-10-03 2005-08-23 International Business Machines Corporation Method to improve cache capacity of SOI and bulk
US7112857B2 (en) * 2004-07-06 2006-09-26 Taiwan Semiconductor Manufacturing Co., Ltd. Devices with different electrical gate dielectric thicknesses but with substantially similar physical configurations
US7217978B2 (en) 2005-01-19 2007-05-15 International Business Machines Corporation SRAM memories and microprocessors having logic portions implemented in high-performance silicon substrates and SRAM array portions having field effect transistors with linked bodies and method for making same

Also Published As

Publication number Publication date
US7605447B2 (en) 2009-10-20
DE602006006088D1 (de) 2009-05-14
US20070063278A1 (en) 2007-03-22
WO2007039333A1 (en) 2007-04-12
KR20080046656A (ko) 2008-05-27
TW200721460A (en) 2007-06-01
KR101013083B1 (ko) 2011-02-14
EP1946375A1 (de) 2008-07-23
JP5039989B2 (ja) 2012-10-03
CN101268551A (zh) 2008-09-17
EP1946375B1 (de) 2009-04-01
JP2009509347A (ja) 2009-03-05

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