ATE434835T1 - Halbleiterphotodiode und herstellungsverfahren dafür - Google Patents

Halbleiterphotodiode und herstellungsverfahren dafür

Info

Publication number
ATE434835T1
ATE434835T1 AT06701208T AT06701208T ATE434835T1 AT E434835 T1 ATE434835 T1 AT E434835T1 AT 06701208 T AT06701208 T AT 06701208T AT 06701208 T AT06701208 T AT 06701208T AT E434835 T1 ATE434835 T1 AT E434835T1
Authority
AT
Austria
Prior art keywords
region
conductivity type
semiconductor
photodiode
photodiod
Prior art date
Application number
AT06701208T
Other languages
English (en)
Inventor
Radivoje Popovic
Zhen Xiao
Original Assignee
Ecole Polytech
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ecole Polytech filed Critical Ecole Polytech
Application granted granted Critical
Publication of ATE434835T1 publication Critical patent/ATE434835T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/107—Integrated devices having multiple elements covered by H10F30/00 in a repetitive configuration, e.g. radiation detectors comprising photodiode arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/148—Shapes of potential barriers

Landscapes

  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
AT06701208T 2005-01-11 2006-01-10 Halbleiterphotodiode und herstellungsverfahren dafür ATE434835T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP05100128A EP1679749A1 (de) 2005-01-11 2005-01-11 Halbleiter Photodiode und Verfahren zur Herstellung
PCT/EP2006/050103 WO2006074990A1 (en) 2005-01-11 2006-01-10 Semiconductor photodiode and method of making

Publications (1)

Publication Number Publication Date
ATE434835T1 true ATE434835T1 (de) 2009-07-15

Family

ID=34938502

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06701208T ATE434835T1 (de) 2005-01-11 2006-01-10 Halbleiterphotodiode und herstellungsverfahren dafür

Country Status (6)

Country Link
US (1) US20080150069A1 (de)
EP (2) EP1679749A1 (de)
JP (1) JP2008527702A (de)
AT (1) ATE434835T1 (de)
DE (1) DE602006007438D1 (de)
WO (1) WO2006074990A1 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10475831B2 (en) 2015-09-17 2019-11-12 Sony Semiconductor Solutions Corporation Solid-state image sensing device, electronic device, and method for manufacturing solid-state image sensing device

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TWI443817B (zh) 2006-07-03 2014-07-01 濱松赫德尼古斯股份有限公司 Photodiode array
EP1936390A1 (de) * 2006-12-20 2008-06-25 Ecole Polytechnique Federale De Lausanne Epfl - Sti - Imm - Lmis3 Halbleiterbauteil zum Messen von ultra kleinen elektrischen Strömen und kleinen Spannungen
US7964435B2 (en) * 2007-03-07 2011-06-21 Princeton Lightware, Inc. Method for dopant diffusion
US8969117B2 (en) 2007-03-07 2015-03-03 Princeton Lightwave, Inc. Method for forming a buried p-n junction and articles formed thereby
US8044436B2 (en) 2007-03-07 2011-10-25 Princeton Lightwave, Inc. Avalanche photodiode having controlled breakdown voltage
JP2008305857A (ja) * 2007-06-05 2008-12-18 Mitsubishi Electric Corp 光半導体装置
US8198650B2 (en) 2008-12-08 2012-06-12 General Electric Company Semiconductor devices and systems
US8138531B2 (en) * 2009-09-17 2012-03-20 International Business Machines Corporation Structures, design structures and methods of fabricating global shutter pixel sensor cells
JP5218610B2 (ja) * 2011-07-08 2013-06-26 三菱電機株式会社 光半導体装置
FR2994002A1 (fr) * 2012-07-28 2014-01-31 St Microelectronics Sa Procede de determination d'un modele mathematique du comportement d'une diode a jonction pn et dispositif correspondant
GB201311055D0 (en) 2013-06-21 2013-08-07 St Microelectronics Res & Dev Single-photon avalanche diode and an array thereof
GB2524044B (en) * 2014-03-12 2019-03-27 Teledyne E2V Uk Ltd CMOS Image sensor
US10192892B2 (en) 2015-05-29 2019-01-29 Palo Alto Research Center Incorporated Active matrix backplane formed using thin film optocouplers
US9946135B2 (en) * 2015-05-29 2018-04-17 Palo Alto Research Center Incorporated High voltage thin film optical switch
WO2017184226A1 (en) 2016-01-28 2017-10-26 Massachusetts Institute Of Technology Apparatus, systems, and methods for waveguide-coupled resonant photon detection
US10397529B2 (en) 2017-04-28 2019-08-27 Palo Alto Research Center Incorporated Transparent optical coupler active matrix array
EP3435419A1 (de) 2017-07-26 2019-01-30 ams AG Halbleiterbauelement mit einzelelektronenzählfunktion mit einem avalanche bipolartransistor
CN111466027B (zh) * 2017-12-08 2023-06-16 国立大学法人静冈大学 光电转换元件和固态摄像装置
JP2019212684A (ja) * 2018-05-31 2019-12-12 株式会社クオンタムドライブ 可視光無線通信用の受光装置
EP4128354A4 (de) * 2020-03-31 2024-04-17 National Research Council of Canada Nahbereichs-infrarot-bildgebungssysteme
FR3121282B1 (fr) * 2021-03-25 2023-12-22 St Microelectronics Crolles 2 Sas Photodiode SPAD
CN113690336B (zh) * 2021-09-13 2024-02-27 武汉新芯集成电路制造有限公司 单光子雪崩二极管及其制作方法
CN114093962B (zh) * 2021-11-22 2024-04-09 季华实验室 单光子雪崩二极管和光电探测器阵列
CN114203852A (zh) * 2021-12-10 2022-03-18 季华实验室 单光子雪崩二极管和光电探测器阵列
CN121772288A (zh) * 2026-03-02 2026-03-31 北京中科新微特科技开发股份有限公司 一种金属-氧化物半导体场效应晶体管及其制备方法

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NL8101883A (nl) * 1981-04-16 1982-11-16 Philips Nv Ladingsgekoppelde inrichting.
US4837607A (en) * 1984-04-25 1989-06-06 Josef Kemmer Large-area, low capacitance semiconductor arrangement
JPH08125210A (ja) * 1994-10-24 1996-05-17 Jiyousuke Nakada 受光素子及び受光素子アレイ並びにそれらを用いた電解装置
EP1191598B1 (de) 2000-01-18 2007-12-19 Siemens Schweiz AG Verfahren zur Herstellung eines Halbleiter-Photosensors
US6504158B2 (en) * 2000-12-04 2003-01-07 General Electric Company Imaging array minimizing leakage currents
JP2002286959A (ja) * 2000-12-28 2002-10-03 Canon Inc 半導体装置、光電融合基板、及びそれらの製造方法
IES20010616A2 (en) 2001-06-28 2002-05-15 Nat Microelectronics Res Ct Microelectronic device and method of its manufacture

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10475831B2 (en) 2015-09-17 2019-11-12 Sony Semiconductor Solutions Corporation Solid-state image sensing device, electronic device, and method for manufacturing solid-state image sensing device

Also Published As

Publication number Publication date
DE602006007438D1 (de) 2009-08-06
EP1679749A1 (de) 2006-07-12
WO2006074990A1 (en) 2006-07-20
EP1839343B1 (de) 2009-06-24
US20080150069A1 (en) 2008-06-26
EP1839343A1 (de) 2007-10-03
JP2008527702A (ja) 2008-07-24

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