ATE434835T1 - Halbleiterphotodiode und herstellungsverfahren dafür - Google Patents
Halbleiterphotodiode und herstellungsverfahren dafürInfo
- Publication number
- ATE434835T1 ATE434835T1 AT06701208T AT06701208T ATE434835T1 AT E434835 T1 ATE434835 T1 AT E434835T1 AT 06701208 T AT06701208 T AT 06701208T AT 06701208 T AT06701208 T AT 06701208T AT E434835 T1 ATE434835 T1 AT E434835T1
- Authority
- AT
- Austria
- Prior art keywords
- region
- conductivity type
- semiconductor
- photodiode
- photodiod
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/107—Integrated devices having multiple elements covered by H10F30/00 in a repetitive configuration, e.g. radiation detectors comprising photodiode arrays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
- H10F77/148—Shapes of potential barriers
Landscapes
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP05100128A EP1679749A1 (de) | 2005-01-11 | 2005-01-11 | Halbleiter Photodiode und Verfahren zur Herstellung |
| PCT/EP2006/050103 WO2006074990A1 (en) | 2005-01-11 | 2006-01-10 | Semiconductor photodiode and method of making |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE434835T1 true ATE434835T1 (de) | 2009-07-15 |
Family
ID=34938502
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT06701208T ATE434835T1 (de) | 2005-01-11 | 2006-01-10 | Halbleiterphotodiode und herstellungsverfahren dafür |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20080150069A1 (de) |
| EP (2) | EP1679749A1 (de) |
| JP (1) | JP2008527702A (de) |
| AT (1) | ATE434835T1 (de) |
| DE (1) | DE602006007438D1 (de) |
| WO (1) | WO2006074990A1 (de) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10475831B2 (en) | 2015-09-17 | 2019-11-12 | Sony Semiconductor Solutions Corporation | Solid-state image sensing device, electronic device, and method for manufacturing solid-state image sensing device |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2040308B1 (de) | 2006-07-03 | 2016-04-20 | Hamamatsu Photonics K.K. | Fotodiodengruppe |
| EP1936390A1 (de) * | 2006-12-20 | 2008-06-25 | Ecole Polytechnique Federale De Lausanne Epfl - Sti - Imm - Lmis3 | Halbleiterbauteil zum Messen von ultra kleinen elektrischen Strömen und kleinen Spannungen |
| US7964435B2 (en) * | 2007-03-07 | 2011-06-21 | Princeton Lightware, Inc. | Method for dopant diffusion |
| US8044436B2 (en) | 2007-03-07 | 2011-10-25 | Princeton Lightwave, Inc. | Avalanche photodiode having controlled breakdown voltage |
| US8969117B2 (en) | 2007-03-07 | 2015-03-03 | Princeton Lightwave, Inc. | Method for forming a buried p-n junction and articles formed thereby |
| JP2008305857A (ja) * | 2007-06-05 | 2008-12-18 | Mitsubishi Electric Corp | 光半導体装置 |
| US8198650B2 (en) | 2008-12-08 | 2012-06-12 | General Electric Company | Semiconductor devices and systems |
| US8138531B2 (en) * | 2009-09-17 | 2012-03-20 | International Business Machines Corporation | Structures, design structures and methods of fabricating global shutter pixel sensor cells |
| JP5218610B2 (ja) * | 2011-07-08 | 2013-06-26 | 三菱電機株式会社 | 光半導体装置 |
| FR2994002A1 (fr) * | 2012-07-28 | 2014-01-31 | St Microelectronics Sa | Procede de determination d'un modele mathematique du comportement d'une diode a jonction pn et dispositif correspondant |
| GB201311055D0 (en) | 2013-06-21 | 2013-08-07 | St Microelectronics Res & Dev | Single-photon avalanche diode and an array thereof |
| GB2524044B (en) * | 2014-03-12 | 2019-03-27 | Teledyne E2V Uk Ltd | CMOS Image sensor |
| US9946135B2 (en) * | 2015-05-29 | 2018-04-17 | Palo Alto Research Center Incorporated | High voltage thin film optical switch |
| US10192892B2 (en) | 2015-05-29 | 2019-01-29 | Palo Alto Research Center Incorporated | Active matrix backplane formed using thin film optocouplers |
| WO2017184226A1 (en) | 2016-01-28 | 2017-10-26 | Massachusetts Institute Of Technology | Apparatus, systems, and methods for waveguide-coupled resonant photon detection |
| US10397529B2 (en) | 2017-04-28 | 2019-08-27 | Palo Alto Research Center Incorporated | Transparent optical coupler active matrix array |
| EP3435419A1 (de) | 2017-07-26 | 2019-01-30 | ams AG | Halbleiterbauelement mit einzelelektronenzählfunktion mit einem avalanche bipolartransistor |
| CN111466027B (zh) * | 2017-12-08 | 2023-06-16 | 国立大学法人静冈大学 | 光电转换元件和固态摄像装置 |
| JP2019212684A (ja) * | 2018-05-31 | 2019-12-12 | 株式会社クオンタムドライブ | 可視光無線通信用の受光装置 |
| WO2021198839A1 (en) * | 2020-03-31 | 2021-10-07 | National Research Council Of Canada | Short range infrared imaging systems |
| FR3121282B1 (fr) * | 2021-03-25 | 2023-12-22 | St Microelectronics Crolles 2 Sas | Photodiode SPAD |
| CN113690336B (zh) * | 2021-09-13 | 2024-02-27 | 武汉新芯集成电路制造有限公司 | 单光子雪崩二极管及其制作方法 |
| CN114093962B (zh) * | 2021-11-22 | 2024-04-09 | 季华实验室 | 单光子雪崩二极管和光电探测器阵列 |
| CN114203852A (zh) * | 2021-12-10 | 2022-03-18 | 季华实验室 | 单光子雪崩二极管和光电探测器阵列 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL8101883A (nl) * | 1981-04-16 | 1982-11-16 | Philips Nv | Ladingsgekoppelde inrichting. |
| US4837607A (en) * | 1984-04-25 | 1989-06-06 | Josef Kemmer | Large-area, low capacitance semiconductor arrangement |
| JPH08125210A (ja) * | 1994-10-24 | 1996-05-17 | Jiyousuke Nakada | 受光素子及び受光素子アレイ並びにそれらを用いた電解装置 |
| EP1191598B1 (de) * | 2000-01-18 | 2007-12-19 | Siemens Schweiz AG | Verfahren zur Herstellung eines Halbleiter-Photosensors |
| US6504158B2 (en) * | 2000-12-04 | 2003-01-07 | General Electric Company | Imaging array minimizing leakage currents |
| JP2002286959A (ja) * | 2000-12-28 | 2002-10-03 | Canon Inc | 半導体装置、光電融合基板、及びそれらの製造方法 |
| IES20010616A2 (en) | 2001-06-28 | 2002-05-15 | Nat Microelectronics Res Ct | Microelectronic device and method of its manufacture |
-
2005
- 2005-01-11 EP EP05100128A patent/EP1679749A1/de not_active Withdrawn
-
2006
- 2006-01-10 WO PCT/EP2006/050103 patent/WO2006074990A1/en not_active Ceased
- 2006-01-10 AT AT06701208T patent/ATE434835T1/de not_active IP Right Cessation
- 2006-01-10 US US11/795,175 patent/US20080150069A1/en not_active Abandoned
- 2006-01-10 JP JP2007549902A patent/JP2008527702A/ja active Pending
- 2006-01-10 DE DE602006007438T patent/DE602006007438D1/de not_active Expired - Fee Related
- 2006-01-10 EP EP06701208A patent/EP1839343B1/de not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10475831B2 (en) | 2015-09-17 | 2019-11-12 | Sony Semiconductor Solutions Corporation | Solid-state image sensing device, electronic device, and method for manufacturing solid-state image sensing device |
Also Published As
| Publication number | Publication date |
|---|---|
| EP1839343B1 (de) | 2009-06-24 |
| WO2006074990A1 (en) | 2006-07-20 |
| EP1839343A1 (de) | 2007-10-03 |
| US20080150069A1 (en) | 2008-06-26 |
| EP1679749A1 (de) | 2006-07-12 |
| JP2008527702A (ja) | 2008-07-24 |
| DE602006007438D1 (de) | 2009-08-06 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |