EP1551060A4 - Fotodiodenarray und verfahren zu seiner herstellung - Google Patents

Fotodiodenarray und verfahren zu seiner herstellung

Info

Publication number
EP1551060A4
EP1551060A4 EP03748574A EP03748574A EP1551060A4 EP 1551060 A4 EP1551060 A4 EP 1551060A4 EP 03748574 A EP03748574 A EP 03748574A EP 03748574 A EP03748574 A EP 03748574A EP 1551060 A4 EP1551060 A4 EP 1551060A4
Authority
EP
European Patent Office
Prior art keywords
light incidence
photodiode array
incidence surface
semiconductor substrate
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP03748574A
Other languages
English (en)
French (fr)
Japanese (ja)
Other versions
EP1551060A1 (de
EP1551060B1 (de
Inventor
Katsumi Shibayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu Photonics KK
Original Assignee
Hamamatsu Photonics KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK
Priority to EP14168605.5A priority Critical patent/EP2768025B1/de
Priority to EP15192319.0A priority patent/EP2996148B1/de
Priority to EP12173415.6A priority patent/EP2506305B1/de
Publication of EP1551060A1 publication Critical patent/EP1551060A1/de
Publication of EP1551060A4 publication Critical patent/EP1551060A4/de
Application granted granted Critical
Publication of EP1551060B1 publication Critical patent/EP1551060B1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/107—Integrated devices having multiple elements covered by H10F30/00 in a repetitive configuration, e.g. radiation detectors comprising photodiode arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H10W20/0242—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias comprising etching via holes from the back sides of the chips, wafers or substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H10W20/0245—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias comprising use of blind vias during the manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H10W20/211—Through-semiconductor vias, e.g. TSVs
    • H10W20/212—Top-view shapes or dispositions, e.g. top-view layouts of the vias
    • H10W20/2125—Top-view shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H10W20/211—Through-semiconductor vias, e.g. TSVs
    • H10W20/216—Through-semiconductor vias, e.g. TSVs characterised by dielectric material at least partially filling the via holes, e.g. covering the through-semiconductor vias in the via holes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241—Dispositions, e.g. layouts
    • H10W72/242—Dispositions, e.g. layouts relative to the surface, e.g. recessed, protruding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/29—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/942—Dispositions of bond pads relative to underlying supporting features, e.g. bond pads, RDLs or vias

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
EP03748574A 2002-09-24 2003-09-24 Fotodiodenarray und verfahren zu seiner herstellung Expired - Lifetime EP1551060B1 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP14168605.5A EP2768025B1 (de) 2002-09-24 2003-09-24 Fotodiodenarray
EP15192319.0A EP2996148B1 (de) 2002-09-24 2003-09-24 Fotodiodenanordnung
EP12173415.6A EP2506305B1 (de) 2002-09-24 2003-09-24 Verfahren zur Herstellung eines Fotodiodenarray

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002277948 2002-09-24
JP2002277948 2002-09-24
PCT/JP2003/012163 WO2004030102A1 (ja) 2002-09-24 2003-09-24 フォトダイオードアレイ及びその製造方法

Related Child Applications (4)

Application Number Title Priority Date Filing Date
EP14168605.5A Division EP2768025B1 (de) 2002-09-24 2003-09-24 Fotodiodenarray
EP15192319.0A Division EP2996148B1 (de) 2002-09-24 2003-09-24 Fotodiodenanordnung
EP12173415.6A Division EP2506305B1 (de) 2002-09-24 2003-09-24 Verfahren zur Herstellung eines Fotodiodenarray
EP12173415.6A Division-Into EP2506305B1 (de) 2002-09-24 2003-09-24 Verfahren zur Herstellung eines Fotodiodenarray

Publications (3)

Publication Number Publication Date
EP1551060A1 EP1551060A1 (de) 2005-07-06
EP1551060A4 true EP1551060A4 (de) 2008-03-12
EP1551060B1 EP1551060B1 (de) 2012-08-15

Family

ID=32040414

Family Applications (4)

Application Number Title Priority Date Filing Date
EP12173415.6A Expired - Lifetime EP2506305B1 (de) 2002-09-24 2003-09-24 Verfahren zur Herstellung eines Fotodiodenarray
EP03748574A Expired - Lifetime EP1551060B1 (de) 2002-09-24 2003-09-24 Fotodiodenarray und verfahren zu seiner herstellung
EP15192319.0A Expired - Lifetime EP2996148B1 (de) 2002-09-24 2003-09-24 Fotodiodenanordnung
EP14168605.5A Expired - Lifetime EP2768025B1 (de) 2002-09-24 2003-09-24 Fotodiodenarray

Family Applications Before (1)

Application Number Title Priority Date Filing Date
EP12173415.6A Expired - Lifetime EP2506305B1 (de) 2002-09-24 2003-09-24 Verfahren zur Herstellung eines Fotodiodenarray

Family Applications After (2)

Application Number Title Priority Date Filing Date
EP15192319.0A Expired - Lifetime EP2996148B1 (de) 2002-09-24 2003-09-24 Fotodiodenanordnung
EP14168605.5A Expired - Lifetime EP2768025B1 (de) 2002-09-24 2003-09-24 Fotodiodenarray

Country Status (7)

Country Link
EP (4) EP2506305B1 (de)
JP (2) JP4554368B2 (de)
KR (1) KR101087866B1 (de)
CN (1) CN100399570C (de)
AU (1) AU2003268667A1 (de)
IL (1) IL167626A (de)
WO (1) WO2004030102A1 (de)

Families Citing this family (25)

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Publication number Priority date Publication date Assignee Title
US7517798B2 (en) 2005-09-01 2009-04-14 Micron Technology, Inc. Methods for forming through-wafer interconnects and structures resulting therefrom
US8569876B2 (en) 2006-11-22 2013-10-29 Tessera, Inc. Packaged semiconductor chips with array
US7791199B2 (en) 2006-11-22 2010-09-07 Tessera, Inc. Packaged semiconductor chips
EP2135280A2 (de) 2007-03-05 2009-12-23 Tessera, Inc. Chips mit rückseitigen kontakten, die durch durchkontaktierungen mit vorderseitigen kontakten verbunden werden
GB2449853B (en) 2007-06-04 2012-02-08 Detection Technology Oy Photodetector for imaging system
KR101538648B1 (ko) * 2007-07-31 2015-07-22 인벤사스 코포레이션 실리콘 쓰루 비아를 사용하는 반도체 패키지 공정
CN101640228B (zh) * 2008-07-30 2011-05-04 太聚能源股份有限公司 光电二极管结构及其制造方法
US9640437B2 (en) 2010-07-23 2017-05-02 Tessera, Inc. Methods of forming semiconductor elements using micro-abrasive particle stream
US8791575B2 (en) 2010-07-23 2014-07-29 Tessera, Inc. Microelectronic elements having metallic pads overlying vias
US8796135B2 (en) 2010-07-23 2014-08-05 Tessera, Inc. Microelectronic elements with rear contacts connected with via first or via middle structures
US8610259B2 (en) 2010-09-17 2013-12-17 Tessera, Inc. Multi-function and shielded 3D interconnects
US8847380B2 (en) * 2010-09-17 2014-09-30 Tessera, Inc. Staged via formation from both sides of chip
US8736066B2 (en) 2010-12-02 2014-05-27 Tessera, Inc. Stacked microelectronic assemby with TSVS formed in stages and carrier above chip
US8587126B2 (en) 2010-12-02 2013-11-19 Tessera, Inc. Stacked microelectronic assembly with TSVs formed in stages with plural active chips
US8637968B2 (en) 2010-12-02 2014-01-28 Tessera, Inc. Stacked microelectronic assembly having interposer connecting active chips
US8610264B2 (en) 2010-12-08 2013-12-17 Tessera, Inc. Compliant interconnects in wafers
JP5757835B2 (ja) * 2011-10-04 2015-08-05 浜松ホトニクス株式会社 分光センサの製造方法
JP5832852B2 (ja) * 2011-10-21 2015-12-16 浜松ホトニクス株式会社 光検出装置
JP5791461B2 (ja) * 2011-10-21 2015-10-07 浜松ホトニクス株式会社 光検出装置
JP6068955B2 (ja) 2012-11-28 2017-01-25 浜松ホトニクス株式会社 フォトダイオードアレイ
JP6068954B2 (ja) 2012-11-28 2017-01-25 浜松ホトニクス株式会社 フォトダイオードアレイ
JP5925711B2 (ja) * 2013-02-20 2016-05-25 浜松ホトニクス株式会社 検出器、ｐｅｔ装置及びｘ線ｃｔ装置
JP6541313B2 (ja) * 2014-07-31 2019-07-10 キヤノン株式会社 光電変換装置、及び撮像システム
CN110379766B (zh) * 2019-06-26 2023-05-09 中国电子科技集团公司第三十八研究所 一种倒金字塔型硅通孔垂直互联结构及制备方法
CN112054073A (zh) * 2020-06-24 2020-12-08 厦门市三安集成电路有限公司 一种带导光结构的光电二极管及其制作方法

Citations (3)

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Publication number Priority date Publication date Assignee Title
JPH0328759U (de) * 1989-07-27 1991-03-22
JPH0529483A (ja) * 1991-07-19 1993-02-05 Rohm Co Ltd 半導体集積装置
JP2001318155A (ja) * 2000-02-28 2001-11-16 Toshiba Corp 放射線検出器、およびｘ線ｃｔ装置

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JPS58188968A (ja) * 1982-04-28 1983-11-04 Fujitsu Ltd 固体撮像装置
JPH01258457A (ja) * 1988-04-08 1989-10-16 Nec Corp 半導体集積回路の実装構造およびその製造方法
JP2517375B2 (ja) * 1988-12-19 1996-07-24 三菱電機株式会社 固体撮像装置および該装置に用いられる電荷転送装置ならびにその製造方法
JPH04102066A (ja) * 1990-08-20 1992-04-03 Mitsubishi Electric Corp 加速度センサ及びその製造方法
JPH06177201A (ja) 1992-12-04 1994-06-24 Olympus Optical Co Ltd 半導体装置
JP4011695B2 (ja) * 1996-12-02 2007-11-21 株式会社東芝 マルチチップ半導体装置用チップおよびその形成方法
JPH11251316A (ja) * 1998-03-02 1999-09-17 Toshiba Corp マルチチップ半導体装置の製造方法
JP4708522B2 (ja) * 1999-11-19 2011-06-22 ルネサスエレクトロニクス株式会社 半導体装置
FR2805709B1 (fr) * 2000-02-28 2002-05-17 Commissariat Energie Atomique Connexion electrique entre deux faces d'un substrat et procede de realisation
JP2002057318A (ja) * 2000-08-07 2002-02-22 Sony Corp 固体撮像素子及びその製造方法
JP3599325B2 (ja) * 2001-02-09 2004-12-08 株式会社フジクラ 基板の貫通電極形成方法および貫通電極を有する基板

Patent Citations (3)

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Publication number Priority date Publication date Assignee Title
JPH0328759U (de) * 1989-07-27 1991-03-22
JPH0529483A (ja) * 1991-07-19 1993-02-05 Rohm Co Ltd 半導体集積装置
JP2001318155A (ja) * 2000-02-28 2001-11-16 Toshiba Corp 放射線検出器、およびｘ線ｃｔ装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2004030102A1 *

Also Published As

Publication number Publication date
KR20050057533A (ko) 2005-06-16
JP5198411B2 (ja) 2013-05-15
CN1685513A (zh) 2005-10-19
EP1551060A1 (de) 2005-07-06
JPWO2004030102A1 (ja) 2006-01-26
EP2996148A1 (de) 2016-03-16
KR101087866B1 (ko) 2011-11-30
WO2004030102A1 (ja) 2004-04-08
EP2506305A1 (de) 2012-10-03
EP2996148B1 (de) 2018-11-07
CN100399570C (zh) 2008-07-02
EP2506305B1 (de) 2014-11-05
EP1551060B1 (de) 2012-08-15
EP2768025B1 (de) 2016-01-06
JP4554368B2 (ja) 2010-09-29
EP2768025A1 (de) 2014-08-20
JP2010034591A (ja) 2010-02-12
IL167626A (en) 2010-11-30
AU2003268667A1 (en) 2004-04-19

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