ATE435229T1 - Verfahren zur reinigung von als vorläufer bei der abscheidung chemischer dämpfe verwendeten organosilicium-zusammensetzungen - Google Patents
Verfahren zur reinigung von als vorläufer bei der abscheidung chemischer dämpfe verwendeten organosilicium-zusammensetzungenInfo
- Publication number
- ATE435229T1 ATE435229T1 AT08151076T AT08151076T ATE435229T1 AT E435229 T1 ATE435229 T1 AT E435229T1 AT 08151076 T AT08151076 T AT 08151076T AT 08151076 T AT08151076 T AT 08151076T AT E435229 T1 ATE435229 T1 AT E435229T1
- Authority
- AT
- Austria
- Prior art keywords
- precursors
- vapor deposition
- chemical vapor
- compositions used
- purifying
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 3
- 239000000203 mixture Substances 0.000 title abstract 3
- 238000005229 chemical vapour deposition Methods 0.000 title 1
- 239000002243 precursor Substances 0.000 title 1
- 239000002253 acid Substances 0.000 abstract 3
- 239000012535 impurity Substances 0.000 abstract 2
- 150000003839 salts Chemical class 0.000 abstract 2
- YENOLDYITNSPMQ-UHFFFAOYSA-N carboxysilicon Chemical compound OC([Si])=O YENOLDYITNSPMQ-UHFFFAOYSA-N 0.000 abstract 1
- 239000002244 precipitate Substances 0.000 abstract 1
- 239000000047 product Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
- C07F7/18—Compounds having one or more C—Si linkages as well as one or more C—O—Si linkages
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
- C07F7/20—Purification, separation
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US89945807P | 2007-02-05 | 2007-02-05 | |
| US11/753,073 US20080188679A1 (en) | 2007-02-05 | 2007-05-24 | Method Of Purifying Organosilicon Compositions Used As Precursors In Chemical Vapor Desposition |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE435229T1 true ATE435229T1 (de) | 2009-07-15 |
Family
ID=39471826
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT08151076T ATE435229T1 (de) | 2007-02-05 | 2008-02-05 | Verfahren zur reinigung von als vorläufer bei der abscheidung chemischer dämpfe verwendeten organosilicium-zusammensetzungen |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20080188679A1 (de) |
| EP (1) | EP1953168B1 (de) |
| JP (1) | JP2008189671A (de) |
| KR (1) | KR100936109B1 (de) |
| AT (1) | ATE435229T1 (de) |
| DE (1) | DE602008000031D1 (de) |
| TW (1) | TW200835695A (de) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070287849A1 (en) | 2006-06-13 | 2007-12-13 | Air Products And Chemicals, Inc. | Low-Impurity Organosilicon Product As Precursor For CVD |
| DE102007037858B4 (de) | 2007-08-10 | 2012-04-19 | Infineon Technologies Ag | Halbleiterbauelement mit verbessertem dynamischen Verhalten |
| DE102009001088A1 (de) * | 2009-02-23 | 2010-08-26 | Wacker Chemie Ag | Verfahren zur Herstellung und Stabilisierung von Oligoaminosilanen |
| US9337018B2 (en) * | 2012-06-01 | 2016-05-10 | Air Products And Chemicals, Inc. | Methods for depositing films with organoaminodisilane precursors |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SE453688B (sv) | 1985-11-13 | 1988-02-22 | Tommy Kedbrant | Tilluftsdon |
| US5084588A (en) * | 1990-07-05 | 1992-01-28 | Union Carbide Chemicals & Plastics Technology Corporation | Reducing halide contamination in alkoxy silanes |
| US5210254A (en) * | 1992-03-31 | 1993-05-11 | Union Carbide Chemicals & Plastics Technology Corporation | Acidic halide neutralization in alkoxysilanes |
| DE19516386A1 (de) | 1995-05-04 | 1996-11-07 | Huels Chemische Werke Ag | Verfahren zur Herstellung von an chlorfunktionellen Organosilanen armen bzw. freien aminofunktionellen Organosilanen |
| US6054379A (en) * | 1998-02-11 | 2000-04-25 | Applied Materials, Inc. | Method of depositing a low k dielectric with organo silane |
| US6100415A (en) * | 1998-03-16 | 2000-08-08 | Japan Pionics Co., Ltd. | Purified alkoxide and process for purifying crude alkoxide |
| DE19821156B4 (de) * | 1998-05-12 | 2006-04-06 | Degussa Ag | Verfahren zur Minderung von Resthalogengehalten und Farbzahlverbesserung in Alkoxysilanen oder Alkoxysilan-basierenden Zusammensetzungen und die Verwendung von Aktivkohle dazu |
| US6150552A (en) * | 1998-06-30 | 2000-11-21 | Great Lakes Chemical Corporation | Efficient methods for making tetrahalophthalate esters having excellent purity |
| ATE272065T1 (de) * | 1998-11-06 | 2004-08-15 | Degussa | Verfahren zur herstellung von alkoxysilanen |
| US6583048B2 (en) * | 2001-01-17 | 2003-06-24 | Air Products And Chemicals, Inc. | Organosilicon precursors for interlayer dielectric films with low dielectric constants |
| DE10143568C2 (de) * | 2001-09-05 | 2003-07-03 | Degussa | Verfahren zur Behandlung von Aminosilanverfärbungen |
| WO2005028486A1 (en) * | 2003-09-12 | 2005-03-31 | Honeywell International Inc. | Methods of refining silane compounds |
| US6861546B1 (en) * | 2004-02-03 | 2005-03-01 | Dow Corning Corporation | Method of purifying alkoxysilanes |
-
2007
- 2007-05-24 US US11/753,073 patent/US20080188679A1/en not_active Abandoned
-
2008
- 2008-02-04 TW TW097104346A patent/TW200835695A/zh unknown
- 2008-02-05 DE DE602008000031T patent/DE602008000031D1/de not_active Expired - Fee Related
- 2008-02-05 AT AT08151076T patent/ATE435229T1/de not_active IP Right Cessation
- 2008-02-05 EP EP08151076A patent/EP1953168B1/de not_active Not-in-force
- 2008-02-05 JP JP2008025003A patent/JP2008189671A/ja not_active Withdrawn
- 2008-02-05 KR KR1020080011517A patent/KR100936109B1/ko not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US20080188679A1 (en) | 2008-08-07 |
| EP1953168B1 (de) | 2009-07-01 |
| JP2008189671A (ja) | 2008-08-21 |
| KR20080073247A (ko) | 2008-08-08 |
| KR100936109B1 (ko) | 2010-01-11 |
| DE602008000031D1 (de) | 2009-08-13 |
| TW200835695A (en) | 2008-09-01 |
| EP1953168A1 (de) | 2008-08-06 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |