ATE440922T1 - Verfahren zum assemblieren von substraten mit wärmebehandlungen bei niedrigen temperaturen - Google Patents
Verfahren zum assemblieren von substraten mit wärmebehandlungen bei niedrigen temperaturenInfo
- Publication number
- ATE440922T1 ATE440922T1 AT07727896T AT07727896T ATE440922T1 AT E440922 T1 ATE440922 T1 AT E440922T1 AT 07727896 T AT07727896 T AT 07727896T AT 07727896 T AT07727896 T AT 07727896T AT E440922 T1 ATE440922 T1 AT E440922T1
- Authority
- AT
- Austria
- Prior art keywords
- low temperature
- temperature heat
- heat treatments
- assembling substrates
- substrates
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 title abstract 3
- 238000011282 treatment Methods 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
- C09J5/06—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers involving heating of the applied adhesive
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/10—Methods of surface bonding and/or assembly therefor
- Y10T156/1052—Methods of surface bonding and/or assembly therefor with cutting, punching, tearing or severing
- Y10T156/1059—Splitting sheet lamina in plane intermediate of faces
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
- Element Separation (AREA)
- Electroluminescent Light Sources (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Lining Or Joining Of Plastics Or The Like (AREA)
- Combinations Of Printed Boards (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0651290A FR2899594A1 (fr) | 2006-04-10 | 2006-04-10 | Procede d'assemblage de substrats avec traitements thermiques a basses temperatures |
| PCT/EP2007/053428 WO2007116038A1 (fr) | 2006-04-10 | 2007-04-06 | Procede d'assemblage de substrats avec traitements thermiques a basses temperatures |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE440922T1 true ATE440922T1 (de) | 2009-09-15 |
Family
ID=37544382
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT07727896T ATE440922T1 (de) | 2006-04-10 | 2007-04-06 | Verfahren zum assemblieren von substraten mit wärmebehandlungen bei niedrigen temperaturen |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US20090162991A1 (de) |
| EP (1) | EP2004768B1 (de) |
| JP (1) | JP5230601B2 (de) |
| AT (1) | ATE440922T1 (de) |
| DE (1) | DE602007002178D1 (de) |
| FR (1) | FR2899594A1 (de) |
| WO (1) | WO2007116038A1 (de) |
Families Citing this family (27)
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|---|---|---|---|---|
| US9173967B1 (en) | 2007-05-11 | 2015-11-03 | SDCmaterials, Inc. | System for and method of processing soft tissue and skin with fluids using temperature and pressure changes |
| US8507401B1 (en) | 2007-10-15 | 2013-08-13 | SDCmaterials, Inc. | Method and system for forming plug and play metal catalysts |
| JP2010045156A (ja) * | 2008-08-12 | 2010-02-25 | Toshiba Corp | 半導体装置の製造方法 |
| FR2938119B1 (fr) * | 2008-10-30 | 2011-04-22 | Soitec Silicon On Insulator | Procede de detachement de couches semi-conductrices a basse temperature |
| FR2942910B1 (fr) * | 2009-03-06 | 2011-09-30 | Soitec Silicon On Insulator | Procede de fabrication d'une heterostructure visant a reduire l'etat de contrainte en tension du substrat donneur |
| US9039916B1 (en) | 2009-12-15 | 2015-05-26 | SDCmaterials, Inc. | In situ oxide removal, dispersal and drying for copper copper-oxide |
| US8470112B1 (en) | 2009-12-15 | 2013-06-25 | SDCmaterials, Inc. | Workflow for novel composite materials |
| US9126191B2 (en) | 2009-12-15 | 2015-09-08 | SDCmaterials, Inc. | Advanced catalysts for automotive applications |
| US9149797B2 (en) | 2009-12-15 | 2015-10-06 | SDCmaterials, Inc. | Catalyst production method and system |
| US8803025B2 (en) | 2009-12-15 | 2014-08-12 | SDCmaterials, Inc. | Non-plugging D.C. plasma gun |
| US8652992B2 (en) | 2009-12-15 | 2014-02-18 | SDCmaterials, Inc. | Pinning and affixing nano-active material |
| US8557727B2 (en) | 2009-12-15 | 2013-10-15 | SDCmaterials, Inc. | Method of forming a catalyst with inhibited mobility of nano-active material |
| US8545652B1 (en) | 2009-12-15 | 2013-10-01 | SDCmaterials, Inc. | Impact resistant material |
| US8669202B2 (en) | 2011-02-23 | 2014-03-11 | SDCmaterials, Inc. | Wet chemical and plasma methods of forming stable PtPd catalysts |
| BR112014003781A2 (pt) | 2011-08-19 | 2017-03-21 | Sdcmaterials Inc | substratos revestidos para uso em catalisadores e conversores catalíticos e métodos para revestir substratos com composições de revestimento por imersão |
| FR2990054B1 (fr) * | 2012-04-27 | 2014-05-02 | Commissariat Energie Atomique | Procede de collage dans une atmosphere de gaz presentant un coefficient de joule-thomson negatif. |
| US9437474B2 (en) | 2012-09-05 | 2016-09-06 | Commissariat à l'énergie atomique et aux énergies alternative | Method for fabricating microelectronic devices with isolation trenches partially formed under active regions |
| US9511352B2 (en) | 2012-11-21 | 2016-12-06 | SDCmaterials, Inc. | Three-way catalytic converter using nanoparticles |
| US9156025B2 (en) | 2012-11-21 | 2015-10-13 | SDCmaterials, Inc. | Three-way catalytic converter using nanoparticles |
| JP2014103291A (ja) * | 2012-11-21 | 2014-06-05 | Renesas Electronics Corp | 半導体装置の製造方法 |
| US9586179B2 (en) | 2013-07-25 | 2017-03-07 | SDCmaterials, Inc. | Washcoats and coated substrates for catalytic converters and methods of making and using same |
| MX2016004759A (es) | 2013-10-22 | 2016-07-26 | Sdcmaterials Inc | Composiciones para trampas de oxidos de nitrogeno (nox) pobres. |
| CN106061600A (zh) | 2013-10-22 | 2016-10-26 | Sdc材料公司 | 用于重型柴油机的催化剂设计 |
| US9687811B2 (en) | 2014-03-21 | 2017-06-27 | SDCmaterials, Inc. | Compositions for passive NOx adsorption (PNA) systems and methods of making and using same |
| FR3040108B1 (fr) | 2015-08-12 | 2017-08-11 | Commissariat Energie Atomique | Procede de fabrication d'une structure semi-conductrice avec collage direct temporaire exploitant une couche poreuse |
| FR3085957B1 (fr) | 2018-09-14 | 2021-01-29 | Commissariat Energie Atomique | Procede de collage temporaire avec adhesif thermoplastique incorporant une couronne rigide |
| FR3088480B1 (fr) | 2018-11-09 | 2020-12-04 | Commissariat Energie Atomique | Procede de collage avec desorption stimulee electroniquement |
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| JP2535957B2 (ja) | 1987-09-29 | 1996-09-18 | ソニー株式会社 | 半導体基板 |
| JPH02194519A (ja) | 1989-01-23 | 1990-08-01 | Nippon Telegr & Teleph Corp <Ntt> | 複合半導体基板およびその製造方法 |
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| US5395788A (en) * | 1991-03-15 | 1995-03-07 | Shin Etsu Handotai Co., Ltd. | Method of producing semiconductor substrate |
| JP2726583B2 (ja) * | 1991-11-18 | 1998-03-11 | 三菱マテリアルシリコン株式会社 | 半導体基板 |
| JPH0799295A (ja) * | 1993-06-07 | 1995-04-11 | Canon Inc | 半導体基体の作成方法及び半導体基体 |
| JP2662495B2 (ja) | 1993-06-28 | 1997-10-15 | 住友シチックス株式会社 | 接着半導体基板の製造方法 |
| JP2856030B2 (ja) | 1993-06-29 | 1999-02-10 | 信越半導体株式会社 | 結合ウエーハの製造方法 |
| US5668045A (en) * | 1994-11-30 | 1997-09-16 | Sibond, L.L.C. | Process for stripping outer edge of BESOI wafers |
| US5937312A (en) * | 1995-03-23 | 1999-08-10 | Sibond L.L.C. | Single-etch stop process for the manufacture of silicon-on-insulator wafers |
| JPH0917984A (ja) | 1995-06-29 | 1997-01-17 | Sumitomo Sitix Corp | 貼り合わせsoi基板の製造方法 |
| US5869386A (en) * | 1995-09-28 | 1999-02-09 | Nec Corporation | Method of fabricating a composite silicon-on-insulator substrate |
| JP3352896B2 (ja) | 1997-01-17 | 2002-12-03 | 信越半導体株式会社 | 貼り合わせ基板の作製方法 |
| JP3352902B2 (ja) | 1997-02-21 | 2002-12-03 | 信越半導体株式会社 | 貼り合わせ基板の作製方法 |
| US6159824A (en) * | 1997-05-12 | 2000-12-12 | Silicon Genesis Corporation | Silicon-on-silicon wafer bonding process using a thin film blister-separation method |
| US5877070A (en) * | 1997-05-31 | 1999-03-02 | Max-Planck Society | Method for the transfer of thin layers of monocrystalline material to a desirable substrate |
| JP3132425B2 (ja) | 1997-06-20 | 2001-02-05 | 日本電気株式会社 | 衛星イントラネットサービスにおける通信時間短縮方式 |
| FR2767416B1 (fr) * | 1997-08-12 | 1999-10-01 | Commissariat Energie Atomique | Procede de fabrication d'un film mince de materiau solide |
| US6306729B1 (en) * | 1997-12-26 | 2001-10-23 | Canon Kabushiki Kaisha | Semiconductor article and method of manufacturing the same |
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| JP3635200B2 (ja) | 1998-06-04 | 2005-04-06 | 信越半導体株式会社 | Soiウェーハの製造方法 |
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| DE19943101C2 (de) | 1999-09-09 | 2002-06-20 | Wacker Siltronic Halbleitermat | Verfahren zur Herstellung einer gebondeten Halbleiterscheibe |
| JP3632531B2 (ja) | 1999-11-17 | 2005-03-23 | 株式会社デンソー | 半導体基板の製造方法 |
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| FR2834123B1 (fr) * | 2001-12-21 | 2005-02-04 | Soitec Silicon On Insulator | Procede de report de couches minces semi-conductrices et procede d'obtention d'une plaquette donneuse pour un tel procede de report |
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| FR2839385B1 (fr) * | 2002-05-02 | 2004-07-23 | Soitec Silicon On Insulator | Procede de decollement de couches de materiau |
| WO2003098695A1 (en) | 2002-05-20 | 2003-11-27 | Sumitomo Mitsubishi Silicon Corporation | Laminated substrate, method of manufacturing the substrate, and wafer outer periphery pressing jigs used for the method |
| EP2164096B1 (de) | 2002-07-17 | 2012-09-05 | Soitec | Verfahren zur Glättung der Kontur einer nützlichen, auf ein Trägersubstrat übertragenen Materialschicht |
| EP1429381B1 (de) * | 2002-12-10 | 2011-07-06 | S.O.I.Tec Silicon on Insulator Technologies | Verfahren zur Herstellung eines Verbundmaterials |
| US7122095B2 (en) * | 2003-03-14 | 2006-10-17 | S.O.I.Tec Silicon On Insulator Technologies S.A. | Methods for forming an assembly for transfer of a useful layer |
| FR2852445B1 (fr) | 2003-03-14 | 2005-05-20 | Soitec Silicon On Insulator | Procede de realisation de substrats ou composants sur substrats avec transfert de couche utile, pour la microelectronique, l'optoelectronique ou l'optique |
| EP1482548B1 (de) * | 2003-05-26 | 2016-04-13 | Soitec | Verfahren zur Herstellung von Halbleiterscheiben |
| US6841848B2 (en) * | 2003-06-06 | 2005-01-11 | Analog Devices, Inc. | Composite semiconductor wafer and a method for forming the composite semiconductor wafer |
| WO2005027217A1 (ja) * | 2003-09-08 | 2005-03-24 | Sumco Corporation | Soiウェーハおよびその製造方法 |
| FR2860842B1 (fr) * | 2003-10-14 | 2007-11-02 | Tracit Technologies | Procede de preparation et d'assemblage de substrats |
| US7442992B2 (en) * | 2004-05-19 | 2008-10-28 | Sumco Corporation | Bonded SOI substrate, and method for manufacturing the same |
| JP4918229B2 (ja) | 2005-05-31 | 2012-04-18 | 信越半導体株式会社 | 貼り合わせウエーハの製造方法 |
| FR2935535B1 (fr) | 2008-09-02 | 2010-12-10 | S O I Tec Silicon On Insulator Tech | Procede de detourage mixte. |
-
2006
- 2006-04-10 FR FR0651290A patent/FR2899594A1/fr not_active Withdrawn
-
2007
- 2007-04-06 US US12/296,250 patent/US20090162991A1/en not_active Abandoned
- 2007-04-06 EP EP07727896A patent/EP2004768B1/de active Active
- 2007-04-06 DE DE602007002178T patent/DE602007002178D1/de active Active
- 2007-04-06 WO PCT/EP2007/053428 patent/WO2007116038A1/fr not_active Ceased
- 2007-04-06 AT AT07727896T patent/ATE440922T1/de not_active IP Right Cessation
- 2007-04-06 JP JP2009504710A patent/JP5230601B2/ja active Active
-
2011
- 2011-10-14 US US13/273,982 patent/US8530331B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US8530331B2 (en) | 2013-09-10 |
| WO2007116038A1 (fr) | 2007-10-18 |
| FR2899594A1 (fr) | 2007-10-12 |
| US20090162991A1 (en) | 2009-06-25 |
| US20120088352A1 (en) | 2012-04-12 |
| EP2004768B1 (de) | 2009-08-26 |
| JP2009533854A (ja) | 2009-09-17 |
| JP5230601B2 (ja) | 2013-07-10 |
| DE602007002178D1 (de) | 2009-10-08 |
| EP2004768A1 (de) | 2008-12-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |