ATE441652T1 - Flüchtige ketoiminat- und diiminat-metallkomplexe - Google Patents

Flüchtige ketoiminat- und diiminat-metallkomplexe

Info

Publication number
ATE441652T1
ATE441652T1 AT05028247T AT05028247T ATE441652T1 AT E441652 T1 ATE441652 T1 AT E441652T1 AT 05028247 T AT05028247 T AT 05028247T AT 05028247 T AT05028247 T AT 05028247T AT E441652 T1 ATE441652 T1 AT E441652T1
Authority
AT
Austria
Prior art keywords
ketoiminate
metal
diiminate
volatile
metal complexes
Prior art date
Application number
AT05028247T
Other languages
English (en)
Inventor
John Anthony Thomas Norman
Original Assignee
Air Prod & Chem
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Air Prod & Chem filed Critical Air Prod & Chem
Application granted granted Critical
Publication of ATE441652T1 publication Critical patent/ATE441652T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F1/00—Compounds containing elements of Groups 1 or 11 of the Periodic Table
    • C07F1/08—Copper compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F1/00—Compounds containing elements of Groups 1 or 11 of the Periodic Table
    • C07F1/005—Compounds containing elements of Groups 1 or 11 of the Periodic Table without C-Metal linkages
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F1/00—Compounds containing elements of Groups 1 or 11 of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F1/00—Compounds containing elements of Groups 1 or 11 of the Periodic Table
    • C07F1/10—Silver compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F1/00—Compounds containing elements of Groups 1 or 11 of the Periodic Table
    • C07F1/12—Gold compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Vapour Deposition (AREA)
  • Nitrogen Condensed Heterocyclic Rings (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
AT05028247T 2004-12-30 2005-12-22 Flüchtige ketoiminat- und diiminat-metallkomplexe ATE441652T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US64033804P 2004-12-30 2004-12-30
US11/111,452 US7205422B2 (en) 2004-12-30 2005-04-21 Volatile metal β-ketoiminate and metal β-diiminate complexes

Publications (1)

Publication Number Publication Date
ATE441652T1 true ATE441652T1 (de) 2009-09-15

Family

ID=35994647

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05028247T ATE441652T1 (de) 2004-12-30 2005-12-22 Flüchtige ketoiminat- und diiminat-metallkomplexe

Country Status (7)

Country Link
US (1) US7205422B2 (de)
EP (1) EP1676850B1 (de)
JP (2) JP4643452B2 (de)
KR (2) KR100824913B1 (de)
AT (1) ATE441652T1 (de)
DE (1) DE602005016361D1 (de)
TW (1) TWI307723B (de)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7323581B1 (en) * 1990-07-06 2008-01-29 Advanced Technology Materials, Inc. Source reagent compositions and method for forming metal films on a substrate by chemical vapor deposition
WO2001093685A1 (en) * 2000-06-06 2001-12-13 Woodholdings Environmental, Inc. Preservative compositions for wood products
US7964031B2 (en) * 2000-06-06 2011-06-21 Dow Corning Corporation Compositions for treating materials and methods of treating same
US7192470B2 (en) * 2003-05-27 2007-03-20 Woodholdings Environmental, Inc. Preservative compositions for materials and method of preserving same
US8721783B2 (en) * 2000-06-06 2014-05-13 Dow Corning Corporation Compositions for treating materials and methods of treating same
US6960675B2 (en) * 2003-10-14 2005-11-01 Advanced Technology Materials, Inc. Tantalum amide complexes for depositing tantalum-containing films, and method of making same
US7205422B2 (en) * 2004-12-30 2007-04-17 Air Products And Chemicals, Inc. Volatile metal β-ketoiminate and metal β-diiminate complexes
US7947814B2 (en) * 2006-04-25 2011-05-24 Air Products And Chemicals, Inc. Metal complexes of polydentate beta-ketoiminates
US7605078B2 (en) * 2006-09-29 2009-10-20 Tokyo Electron Limited Integration of a variable thickness copper seed layer in copper metallization
US8795771B2 (en) 2006-10-27 2014-08-05 Sean T. Barry ALD of metal-containing films using cyclopentadienyl compounds
US7778063B2 (en) * 2006-11-08 2010-08-17 Symetrix Corporation Non-volatile resistance switching memories and methods of making same
US20080107801A1 (en) * 2006-11-08 2008-05-08 Symetrix Corporation Method of making a variable resistance memory
US20080276970A1 (en) * 2007-05-09 2008-11-13 John Christopher Cameron Apparatus and method for treating materials with compositions
EP2014790A1 (de) 2007-06-21 2009-01-14 Air Products and Chemicals, Inc. Verfahren zur Herstellung von deckenden Kupferdünnfilmen mittels Aufdampfung
US8283485B2 (en) * 2007-06-21 2012-10-09 Air Products And Chemicals, Inc. Process for selectively depositing copper thin films on substrates with copper and ruthenium areas via vapor deposition
US8263795B2 (en) * 2007-11-05 2012-09-11 Air Products And Chemicals, Inc. Copper precursors for thin film deposition
EP2060577B1 (de) 2007-11-05 2013-08-21 Air Products and Chemicals, Inc. Kupfervorstufen für Dünnschichtauftragung
US7691984B2 (en) * 2007-11-27 2010-04-06 Air Products And Chemicals, Inc. Metal complexes of tridentate β-ketoiminates
DE102007058571B4 (de) * 2007-12-05 2012-02-16 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Substrat mit einer Kupfer enthaltenden Beschichtung und Verfahren zu deren Herstellung mittels Atomic Layer Deposition und Verwendung des Verfahrens
EP2288626A4 (de) * 2008-05-19 2013-10-16 Univ California Durch ketondiiminliganden unterstützte übergangsmetallinitiatoren für die homopolymerisation von olefinen und die copolymerisation von olefinen mit polaren comonomeren
TW200951241A (en) * 2008-05-30 2009-12-16 Sigma Aldrich Co Methods of forming ruthenium-containing films by atomic layer deposition
US7919409B2 (en) * 2008-08-15 2011-04-05 Air Products And Chemicals, Inc. Materials for adhesion enhancement of copper film on diffusion barriers
US9528182B2 (en) * 2009-06-22 2016-12-27 Arkema Inc. Chemical vapor deposition using N,O polydentate ligand complexes of metals
US9079923B2 (en) 2010-08-05 2015-07-14 Air Products And Chemicals, Inc. Multidentate ketoimine ligands for metal complexes
US20130143402A1 (en) * 2010-08-20 2013-06-06 Nanmat Technology Co., Ltd. Method of forming Cu thin film
EP2665857B1 (de) 2011-01-18 2017-11-08 Dow Corning Corporation Verfahren zur behandlung von substraten mit halosilanen
US8617305B2 (en) 2011-01-25 2013-12-31 Air Products And Chemicals, Inc. Metal complexes for metal-containing film deposition
KR102168174B1 (ko) 2014-03-19 2020-10-20 삼성전자주식회사 니켈 화합물 및 이를 이용한 박막 형성 방법
CN104264123B (zh) * 2014-09-19 2015-04-22 中南民族大学 一种用于催化甲醇合成反应的CuNi合金薄膜的原子层沉积制备方法
KR20160062675A (ko) 2014-11-25 2016-06-02 (주)마이크로켐 신규 니켈-비스베타케토이미네이트 전구체 및 이를 이용한 니켈 함유 필름 증착방법
US11046629B2 (en) * 2018-02-02 2021-06-29 Kanto Denka Kogyo Co., Ltd. Method of producing compound having butadiene skeleton containing hydrogen and fluorine and/or chlorine
WO2019154945A1 (en) 2018-02-12 2019-08-15 Merck Patent Gmbh Methods of vapor deposition of ruthenium using an oxygen-free co-reactant

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5098516A (en) 1990-12-31 1992-03-24 Air Products And Chemicals, Inc. Processes for the chemical vapor deposition of copper and etching of copper
JP3079814B2 (ja) 1992-11-11 2000-08-21 三菱マテリアル株式会社 銅膜形成用材料
DE4305453A1 (de) * 1993-02-23 1994-08-25 Bayer Ag Reaktivfarbstoffblaumischungen mit verbesserter Metamerie
KR20000013302A (ko) 1998-08-06 2000-03-06 최형수 화학 증착법을 위한 유기 구리 전구체
US6589329B1 (en) 2000-03-09 2003-07-08 Advanced Technology Materials, Inc. Composition and process for production of copper circuitry in microelectronic device structures
WO2001068580A1 (en) 2000-03-14 2001-09-20 Nissan Chemical Industries, Ltd. β-DIKETONATOCOPPER(I) COMPLEX CONTAINING ALLENE COMPOUND AS LIGAND AND PROCESS FOR PRODUCING THE SAME
US20020013487A1 (en) 2000-04-03 2002-01-31 Norman John Anthony Thomas Volatile precursors for deposition of metals and metal-containing films
JP4660924B2 (ja) 2000-12-25 2011-03-30 東ソー株式会社 安定化された銅錯体及びその製造方法
WO2003044242A2 (en) 2001-11-16 2003-05-30 Applied Materials, Inc. Atomic layer deposition of copper using a reducing gas and non-fluorinated copper precursors
US6552209B1 (en) 2002-06-24 2003-04-22 Air Products And Chemicals, Inc. Preparation of metal imino/amino complexes for metal oxide and metal nitride thin films
DE10229040A1 (de) * 2002-06-28 2004-01-29 Solvay Barium Strontium Gmbh Neue Erdalkalimetallkomplexe und ihre Verwendung
US6869876B2 (en) 2002-11-05 2005-03-22 Air Products And Chemicals, Inc. Process for atomic layer deposition of metal films
US20040247905A1 (en) 2003-04-16 2004-12-09 Bradley Alexander Zak Volatile copper(I) complexes for deposition of copper films by atomic layer deposition
US20050227007A1 (en) * 2004-04-08 2005-10-13 Bradley Alexander Z Volatile copper(I) complexes for deposition of copper films by atomic layer deposition
US7034169B1 (en) * 2004-12-30 2006-04-25 Air Products And Chemicals, Inc. Volatile metal β-ketoiminate complexes
US7205422B2 (en) * 2004-12-30 2007-04-17 Air Products And Chemicals, Inc. Volatile metal β-ketoiminate and metal β-diiminate complexes

Also Published As

Publication number Publication date
EP1676850B1 (de) 2009-09-02
TWI307723B (en) 2009-03-21
KR100824913B1 (ko) 2008-04-23
JP4643452B2 (ja) 2011-03-02
JP2006193523A (ja) 2006-07-27
US20060145142A1 (en) 2006-07-06
JP2010180221A (ja) 2010-08-19
TW200622025A (en) 2006-07-01
DE602005016361D1 (de) 2009-10-15
KR20070074516A (ko) 2007-07-12
KR20060093012A (ko) 2006-08-23
US7205422B2 (en) 2007-04-17
EP1676850A1 (de) 2006-07-05

Similar Documents

Publication Publication Date Title
ATE441652T1 (de) Flüchtige ketoiminat- und diiminat-metallkomplexe
ATE409702T1 (de) Flüchtige ketoiminat-metallkomplexe
Lin et al. Mechanistic studies of palladium thin film growth from palladium (II) β-diketonates. 1. Spectroscopic studies of the reactions of bis (hexafluoroacetylacetonato) palladium (II) on copper surfaces
WO2009054462A1 (ja) 複合粒子担持物、該複合粒子担持物の製造方法、及び該複合粒子担持物を化学合成用の触媒として用いた化合物の製造方法
Ramos et al. Precursor design and reaction mechanisms for the atomic layer deposition of metal films
TW200717709A (en) A method for forming a ruthenium metal layer on a patterned substrate
ATE519870T1 (de) Verfahren zur abscheidung von metallschichten aus metallcarbonylvorläufern
JP2002285333A5 (de)
JP2011181961A5 (de)
TW200706683A (en) Beta-diketiminate ligand sources and metal-containing compounds thereof, and systems and methods including same
TW200705017A (en) Wire structure, method for fabricating wire, thin film transistor substrate, and method for fabricating the thin film transistor substrate
GB0723314D0 (en) Coating systems containing rhodium aluminide-based layers
WO2009016980A1 (ja) 無電解めっきにより金属薄膜を形成しためっき物およびその製造方法
DE60234457D1 (de) Substrat mit katalysatorzusammensetzungen auf oberflächen gegenüberliegender seiten und herstellungsverfahren dafür
WO2009016979A1 (ja) 無電解めっきにより金属薄膜を形成しためっき物及びその製造方法
Hiebel et al. Self-assembly of acetate adsorbates drives atomic rearrangement on the Au (110) surface
WO2010081959A3 (fr) Complexes organometalliques pour le depot chimique en phase vapeur de platine
Kim et al. Atomic layer deposition of nickel using a heteroleptic Ni precursor with NH3 and selective deposition on defects of graphene
TW200706682A (en) Unsymmetrical ligand sources, reduced symmetry metal-containing compounds, and systems and methods including same
Xu et al. A strategy for fabricating nanoporous gold films through chemical dealloying of electrochemically deposited Au-Sn alloys
TW200644164A (en) Method for forming a barrier/seed layer for copper metallization
WO2007087795A3 (de) Oligodynamisch wirksame vorrichtung und verfahren zu ihrer herstellung
WO2009059915A3 (de) Goldhaltige nickelschicht
TW200709427A (en) Wire structure, a method for fabricating a wire, a thin film transistor substrate, and a method for fabricating the thin film transistor substrate
WO2007019435A3 (en) Atomic layer deposition of metal-containing films using surface-activating agents

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties