ATE442670T1 - Herstellungsmethode eines opto-elektronischen dünnfilmbauelementes - Google Patents
Herstellungsmethode eines opto-elektronischen dünnfilmbauelementesInfo
- Publication number
- ATE442670T1 ATE442670T1 AT99928916T AT99928916T ATE442670T1 AT E442670 T1 ATE442670 T1 AT E442670T1 AT 99928916 T AT99928916 T AT 99928916T AT 99928916 T AT99928916 T AT 99928916T AT E442670 T1 ATE442670 T1 AT E442670T1
- Authority
- AT
- Austria
- Prior art keywords
- region
- porous
- opto
- layer
- thin film
- Prior art date
Links
- 230000005693 optoelectronics Effects 0.000 title abstract 2
- 239000010409 thin film Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910021426 porous silicon Inorganic materials 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000006096 absorbing agent Substances 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/122—Active materials comprising only Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/40—Optical elements or arrangements
- H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
- H10F77/48—Back surface reflectors [BSR]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/40—Optical elements or arrangements
- H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
- H10F77/488—Reflecting light-concentrating means, e.g. parabolic mirrors or concentrators using total internal reflection
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
- Light Receiving Elements (AREA)
- Formation Of Insulating Films (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP98870147A EP0969522A1 (de) | 1998-07-03 | 1998-07-03 | Optoelektronisches Dünnfilm-Bauelement und dessen Herstellung |
| US9335298P | 1998-07-20 | 1998-07-20 | |
| PCT/BE1999/000085 WO2000002259A1 (en) | 1998-07-03 | 1999-07-02 | A thin-film opto-electronic device and a method of making it |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE442670T1 true ATE442670T1 (de) | 2009-09-15 |
Family
ID=26152270
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT99928916T ATE442670T1 (de) | 1998-07-03 | 1999-07-02 | Herstellungsmethode eines opto-elektronischen dünnfilmbauelementes |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US6683367B1 (de) |
| EP (1) | EP1103075B1 (de) |
| AT (1) | ATE442670T1 (de) |
| AU (1) | AU4593499A (de) |
| DE (1) | DE69941398D1 (de) |
| ES (1) | ES2333284T3 (de) |
| WO (1) | WO2000002259A1 (de) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1341222A1 (de) * | 2002-02-28 | 2003-09-03 | Interuniversitair Micro-Elektronica Centrum | Verfahren zur Herstellung einer Vorrichtung mit einer Halbleiterschicht auf einem Substrat mit nicht-angepasstem Gitter |
| US6955745B1 (en) * | 2002-08-01 | 2005-10-18 | University Of Florida Research Foundation, Inc. | Method of spark-processing silicon and resulting materials |
| EP1398837A1 (de) * | 2002-09-09 | 2004-03-17 | Interuniversitair Microelektronica Centrum ( Imec) | Photovoltaische Vorrichtung |
| US7022544B2 (en) * | 2002-12-18 | 2006-04-04 | International Business Machines Corporation | High speed photodiode with a barrier layer for blocking or eliminating slow photonic carriers and method for forming same |
| US20060027459A1 (en) * | 2004-05-28 | 2006-02-09 | Lake Shore Cryotronics, Inc. | Mesoporous silicon infrared filters and methods of making same |
| WO2006122774A1 (en) * | 2005-05-17 | 2006-11-23 | Interuniversitair Microelektronica Centrum Vzw | Method for the production of photovoltaic cells |
| US20070262296A1 (en) * | 2006-05-11 | 2007-11-15 | Matthias Bauer | Photodetectors employing germanium layers |
| US8174025B2 (en) * | 2006-06-09 | 2012-05-08 | Philips Lumileds Lighting Company, Llc | Semiconductor light emitting device including porous layer |
| US20090181492A1 (en) * | 2008-01-11 | 2009-07-16 | Peter Nunan | Nano-cleave a thin-film of silicon for solar cell fabrication |
| WO2009099071A1 (ja) * | 2008-02-04 | 2009-08-13 | The University Of Tokyo | シリコン太陽電池 |
| KR102061563B1 (ko) * | 2013-08-06 | 2020-01-02 | 삼성전자주식회사 | 반도체 발광소자 |
| JP6730820B2 (ja) | 2016-03-10 | 2020-07-29 | 株式会社東芝 | 光検出器およびこれを用いたライダー装置 |
| GB2597109B (en) * | 2020-07-16 | 2023-05-10 | Plessey Semiconductors Ltd | Strain relaxation layer |
| US11817479B2 (en) | 2021-09-29 | 2023-11-14 | Globalfoundries U.S. Inc. | Transistor with air gap under raised source/drain region in bulk semiconductor substrate |
| US12027582B2 (en) | 2021-10-05 | 2024-07-02 | Globalfoundries U.S. Inc. | IC structure including porous semiconductor layer under trench isolation |
| US11677000B2 (en) | 2021-10-07 | 2023-06-13 | Globalfoundries U.S. Inc. | IC structure including porous semiconductor layer under trench isolations adjacent source/drain regions |
| US12119352B2 (en) | 2022-01-06 | 2024-10-15 | Globalfoundries U.S. Inc. | IC structure including porous semiconductor layer in bulk substrate adjacent trench isolation |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4806996A (en) | 1986-04-10 | 1989-02-21 | American Telephone And Telegraph Company, At&T Bell Laboratories | Dislocation-free epitaxial layer on a lattice-mismatched porous or otherwise submicron patterned single crystal substrate |
| US4818337A (en) | 1986-04-11 | 1989-04-04 | University Of Delaware | Thin active-layer solar cell with multiple internal reflections |
| JPS63182811A (ja) * | 1987-01-26 | 1988-07-28 | Seiko Instr & Electronics Ltd | 化合物半導体のエピタキシヤル成長方法 |
| US5057163A (en) * | 1988-05-04 | 1991-10-15 | Astropower, Inc. | Deposited-silicon film solar cell |
| JPH0342818A (ja) * | 1989-07-10 | 1991-02-25 | Nippon Telegr & Teleph Corp <Ntt> | 化合物半導体装置とその製造方法 |
| JPH03235371A (ja) * | 1990-02-10 | 1991-10-21 | Sumitomo Electric Ind Ltd | タンデム型太陽電池の製造方法 |
| US5136351A (en) * | 1990-03-30 | 1992-08-04 | Sharp Kabushiki Kaisha | Photovoltaic device with porous metal layer |
| US5285078A (en) * | 1992-01-24 | 1994-02-08 | Nippon Steel Corporation | Light emitting element with employment of porous silicon and optical device utilizing light emitting element |
| JP3416163B2 (ja) * | 1992-01-31 | 2003-06-16 | キヤノン株式会社 | 半導体基板及びその作製方法 |
| JP2860028B2 (ja) | 1992-11-26 | 1999-02-24 | 株式会社フジクラ | 紫外線検知装置及びその製造方法 |
| DE4319413C2 (de) * | 1993-06-14 | 1999-06-10 | Forschungszentrum Juelich Gmbh | Interferenzfilter oder dielektrischer Spiegel |
| US5397429A (en) * | 1993-09-14 | 1995-03-14 | University Of Florida | Method of manufacturing photoluminescing porous silicon using spark erosion |
| US6107213A (en) * | 1996-02-01 | 2000-08-22 | Sony Corporation | Method for making thin film semiconductor |
| US5981400A (en) * | 1997-09-18 | 1999-11-09 | Cornell Research Foundation, Inc. | Compliant universal substrate for epitaxial growth |
| DE19743692A1 (de) * | 1997-10-02 | 1999-04-08 | Zae Bayern | Multifunktionsschicht zur Verbesserung des Wirkungsgrades von kristallinen Dünnschicht Silizium Solarzellen |
-
1999
- 1999-07-02 AU AU45934/99A patent/AU4593499A/en not_active Abandoned
- 1999-07-02 AT AT99928916T patent/ATE442670T1/de not_active IP Right Cessation
- 1999-07-02 US US09/743,076 patent/US6683367B1/en not_active Expired - Lifetime
- 1999-07-02 DE DE69941398T patent/DE69941398D1/de not_active Expired - Lifetime
- 1999-07-02 EP EP99928916A patent/EP1103075B1/de not_active Expired - Lifetime
- 1999-07-02 ES ES99928916T patent/ES2333284T3/es not_active Expired - Lifetime
- 1999-07-02 WO PCT/BE1999/000085 patent/WO2000002259A1/en not_active Ceased
-
2003
- 2003-08-19 US US10/644,690 patent/US6815247B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US20040087056A1 (en) | 2004-05-06 |
| AU4593499A (en) | 2000-01-24 |
| US6815247B2 (en) | 2004-11-09 |
| EP1103075A1 (de) | 2001-05-30 |
| ES2333284T3 (es) | 2010-02-18 |
| EP1103075B1 (de) | 2009-09-09 |
| US6683367B1 (en) | 2004-01-27 |
| WO2000002259A1 (en) | 2000-01-13 |
| DE69941398D1 (de) | 2009-10-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |