ATE443782T1 - Verfahren zur herstellung einer auf nanodrähte basierten nanostruktur und verwendung als thermoelektrischer wandler - Google Patents

Verfahren zur herstellung einer auf nanodrähte basierten nanostruktur und verwendung als thermoelektrischer wandler

Info

Publication number
ATE443782T1
ATE443782T1 AT07354043T AT07354043T ATE443782T1 AT E443782 T1 ATE443782 T1 AT E443782T1 AT 07354043 T AT07354043 T AT 07354043T AT 07354043 T AT07354043 T AT 07354043T AT E443782 T1 ATE443782 T1 AT E443782T1
Authority
AT
Austria
Prior art keywords
nanowires
layer
nanodroplet
type semiconductor
electrically insulating
Prior art date
Application number
AT07354043T
Other languages
English (en)
Inventor
Marc Plissonnier
Frederic Gaillard
Raphael Salot
Jean-Antoine Gruss
Original Assignee
Commissariat Energie Atomique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat Energie Atomique filed Critical Commissariat Energie Atomique
Application granted granted Critical
Publication of ATE443782T1 publication Critical patent/ATE443782T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/89—Deposition of materials, e.g. coating, cvd, or ald
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2913—Rod, strand, filament or fiber
    • Y10T428/2933—Coated or with bond, impregnation or core
    • Y10T428/2971—Impregnation

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
AT07354043T 2006-07-20 2007-07-10 Verfahren zur herstellung einer auf nanodrähte basierten nanostruktur und verwendung als thermoelektrischer wandler ATE443782T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0606617A FR2904146B1 (fr) 2006-07-20 2006-07-20 Procede de fabrication d'une nanostructure a base de nanofils interconnectes,nanostructure et utilisation comme convertisseur thermoelectrique

Publications (1)

Publication Number Publication Date
ATE443782T1 true ATE443782T1 (de) 2009-10-15

Family

ID=37963577

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07354043T ATE443782T1 (de) 2006-07-20 2007-07-10 Verfahren zur herstellung einer auf nanodrähte basierten nanostruktur und verwendung als thermoelektrischer wandler

Country Status (7)

Country Link
US (1) US7868243B2 (de)
EP (1) EP1881092B1 (de)
JP (1) JP5183990B2 (de)
AT (1) ATE443782T1 (de)
DE (1) DE602007002525D1 (de)
ES (1) ES2332829T3 (de)
FR (1) FR2904146B1 (de)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104392933B (zh) 2007-08-21 2017-11-07 加州大学评议会 具有高性能热电性质的纳米结构
FR2923601B1 (fr) * 2007-11-12 2010-01-01 Commissariat Energie Atomique Detecteur de rayonnement electromagnetique a connexion par nanofil et procede de realisation
FR2923602B1 (fr) * 2007-11-12 2009-11-20 Commissariat Energie Atomique Detecteur de rayonnement electromagnetique a thermometre a nanofil et procede de realisation
JP2011040663A (ja) * 2009-08-18 2011-02-24 Hioki Ee Corp サーモパイル型赤外線検知素子およびその製造方法
JP5364549B2 (ja) * 2009-12-07 2013-12-11 日置電機株式会社 サーモパイル型赤外線検知素子およびその製造方法
IT1398955B1 (it) * 2010-03-22 2013-03-28 Itec Srl Radiatore di tipo alettato
CN103118777B (zh) 2010-05-24 2016-06-29 希路瑞亚技术公司 纳米线催化剂
CN103153842B (zh) * 2010-10-21 2015-04-08 惠普发展公司，有限责任合伙企业 形成带帽纳米柱
US9240328B2 (en) 2010-11-19 2016-01-19 Alphabet Energy, Inc. Arrays of long nanostructures in semiconductor materials and methods thereof
US8736011B2 (en) 2010-12-03 2014-05-27 Alphabet Energy, Inc. Low thermal conductivity matrices with embedded nanostructures and methods thereof
GB201021112D0 (en) 2010-12-13 2011-01-26 Ntnu Technology Transfer As Nanowires
WO2012088085A1 (en) * 2010-12-21 2012-06-28 Alphabet Energy, Inc. Arrays of filled nanostructures with protruding segments and methods thereof
CN103764276B (zh) 2011-05-24 2017-11-07 希路瑞亚技术公司 用于甲烷氧化偶合的催化剂
US20130158322A1 (en) 2011-11-29 2013-06-20 Siluria Technologies, Inc. Polymer templated nanowire catalysts
GB201200355D0 (en) * 2012-01-10 2012-02-22 Norwegian Univ Sci & Tech Ntnu Nanowires
US9446397B2 (en) 2012-02-03 2016-09-20 Siluria Technologies, Inc. Method for isolation of nanomaterials
US9051175B2 (en) 2012-03-07 2015-06-09 Alphabet Energy, Inc. Bulk nano-ribbon and/or nano-porous structures for thermoelectric devices and methods for making the same
DE102012203792A1 (de) 2012-03-12 2013-09-12 Siemens Aktiengesellschaft Infrarotsensor, Wärmebildkamera und Verfahren zum Herstellen einer Mikrostruktur aus thermoelektrischen Sensorstäben
CA2874043C (en) 2012-05-24 2021-09-14 Siluria Technologies, Inc. Catalytic forms and formulations
GB201211038D0 (en) 2012-06-21 2012-08-01 Norwegian Univ Sci & Tech Ntnu Solar cells
US9257627B2 (en) 2012-07-23 2016-02-09 Alphabet Energy, Inc. Method and structure for thermoelectric unicouple assembly
US9082930B1 (en) 2012-10-25 2015-07-14 Alphabet Energy, Inc. Nanostructured thermolectric elements and methods of making the same
DE102012224224A1 (de) * 2012-12-21 2014-06-26 Siemens Aktiengesellschaft Infrarotsensor mit einer Mikrostruktur mit mehreren Thermoelementen und einem Trägerelement
WO2014143880A1 (en) 2013-03-15 2014-09-18 Siluria Technologies, Inc. Catalysts for petrochemical catalysis
GB201311101D0 (en) 2013-06-21 2013-08-07 Norwegian Univ Sci & Tech Ntnu Semiconducting Films
US9691849B2 (en) 2014-04-10 2017-06-27 Alphabet Energy, Inc. Ultra-long silicon nanostructures, and methods of forming and transferring the same
WO2015168601A2 (en) 2014-05-02 2015-11-05 Siluria Technologies, Inc. Heterogeneous catalysts
HUE054014T2 (hu) 2014-09-17 2021-08-30 Lummus Technology Inc Katalizátorok metán oxidatív csatolására és etán oxidatív dehidrogenálására
CN108292694A (zh) 2015-07-13 2018-07-17 科莱约纳诺公司 纳米线/纳米锥形状的发光二极管及光检测器
US10347791B2 (en) 2015-07-13 2019-07-09 Crayonano As Nanowires or nanopyramids grown on graphitic substrate
EA201890238A1 (ru) 2015-07-31 2018-08-31 Крайонано Ас Способ выращивания нанопроволок или нанопирамидок на графитовых подложках
KR101765412B1 (ko) * 2016-02-23 2017-08-04 연세대학교 산학협력단 수소 센서 및 이의 제조방법
EP3429747A2 (de) 2016-03-16 2019-01-23 Siluria Technologies, Inc. Katalysatoren und verfahren für erdgasprozesse
GB201705755D0 (en) 2017-04-10 2017-05-24 Norwegian Univ Of Science And Tech (Ntnu) Nanostructure
CA3127339A1 (en) 2019-01-30 2020-08-06 Lummus Technology Llc Catalysts for oxidative coupling of methane
GB201913701D0 (en) 2019-09-23 2019-11-06 Crayonano As Composition of matter

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63169081A (ja) * 1987-01-07 1988-07-13 Tokai Kounetsu Kogyo Kk 炭化けい素と炭素からなる熱電対
JPH11261118A (ja) * 1998-03-16 1999-09-24 Ngk Insulators Ltd 熱電変換モジュール並びに半導体ユニットおよびその製造方法
CA2442985C (en) * 2001-03-30 2016-05-31 The Regents Of The University Of California Methods of fabricating nanostructures and nanowires and devices fabricated therefrom
AU2002359470A1 (en) * 2001-11-26 2003-06-10 Massachusetts Institute Of Technology Thick porous anodic alumina films and nanowire arrays grown on a solid substrate
US7135728B2 (en) * 2002-09-30 2006-11-14 Nanosys, Inc. Large-area nanoenabled macroelectronic substrates and uses therefor
WO2004088755A1 (en) * 2003-04-04 2004-10-14 Startskottet 22286 Ab Nanowhiskers with pn junctions and methods of fabricating thereof
US6969679B2 (en) 2003-11-25 2005-11-29 Canon Kabushiki Kaisha Fabrication of nanoscale thermoelectric devices
EP1754260A1 (de) * 2004-05-26 2007-02-21 Koninklijke Philips Electronics N.V. Elektrische einrichtung mit vertikaler komponente
JP2006093390A (ja) * 2004-09-24 2006-04-06 Matsushita Electric Ind Co Ltd 半導体素子および半導体回路

Also Published As

Publication number Publication date
US7868243B2 (en) 2011-01-11
EP1881092B1 (de) 2009-09-23
ES2332829T3 (es) 2010-02-12
FR2904146B1 (fr) 2008-10-17
JP5183990B2 (ja) 2013-04-17
EP1881092A1 (de) 2008-01-23
US20080142066A1 (en) 2008-06-19
JP2008132585A (ja) 2008-06-12
DE602007002525D1 (de) 2009-11-05
FR2904146A1 (fr) 2008-01-25

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