ATE449412T1 - Nichtflüchtiger speicher und beschleunigtes testverfahren für zugehörigen adressendekodierer durch zugefügte modifizierte dummy-speicherzellen - Google Patents

Nichtflüchtiger speicher und beschleunigtes testverfahren für zugehörigen adressendekodierer durch zugefügte modifizierte dummy-speicherzellen

Info

Publication number
ATE449412T1
ATE449412T1 AT02741000T AT02741000T ATE449412T1 AT E449412 T1 ATE449412 T1 AT E449412T1 AT 02741000 T AT02741000 T AT 02741000T AT 02741000 T AT02741000 T AT 02741000T AT E449412 T1 ATE449412 T1 AT E449412T1
Authority
AT
Austria
Prior art keywords
volatile memory
memory cells
cells
testing method
address decoder
Prior art date
Application number
AT02741000T
Other languages
English (en)
Inventor
Steffen Gappisch
Georg Farkas
Original Assignee
Nxp Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nxp Bv filed Critical Nxp Bv
Application granted granted Critical
Publication of ATE449412T1 publication Critical patent/ATE449412T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
    • G11C29/24—Accessing extra cells, e.g. dummy cells or redundant cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters

Landscapes

  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Read Only Memory (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
AT02741000T 2001-06-29 2002-06-28 Nichtflüchtiger speicher und beschleunigtes testverfahren für zugehörigen adressendekodierer durch zugefügte modifizierte dummy-speicherzellen ATE449412T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP01115963 2001-06-29
PCT/IB2002/002489 WO2003003379A1 (en) 2001-06-29 2002-06-28 Non-volatile memory and accelerated test method for address decoder by added modified dummy memory cells

Publications (1)

Publication Number Publication Date
ATE449412T1 true ATE449412T1 (de) 2009-12-15

Family

ID=8177907

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02741000T ATE449412T1 (de) 2001-06-29 2002-06-28 Nichtflüchtiger speicher und beschleunigtes testverfahren für zugehörigen adressendekodierer durch zugefügte modifizierte dummy-speicherzellen

Country Status (8)

Country Link
US (1) US7664998B2 (de)
EP (1) EP1405316B1 (de)
JP (1) JP2004531020A (de)
KR (1) KR100901963B1 (de)
CN (1) CN100568395C (de)
AT (1) ATE449412T1 (de)
DE (1) DE60234446D1 (de)
WO (1) WO2003003379A1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2878644A1 (fr) * 2004-11-30 2006-06-02 St Microelectronics Sa Test d'un decodeur d'adresses de memoire non volatile
US7499372B2 (en) * 2005-05-30 2009-03-03 Seiko Epson Corporation Semiconductor memory device
US8526254B2 (en) * 2008-04-03 2013-09-03 Sidense Corp. Test cells for an unprogrammed OTP memory array
IT1397374B1 (it) 2009-12-30 2013-01-10 St Microelectronics Srl Soluzione integrata per l'individuazione dei componenti difettosi in dispositivi di memoria
CN103093832A (zh) * 2013-02-26 2013-05-08 上海宏力半导体制造有限公司 嵌入式闪存的失效测试方法
US11520507B1 (en) * 2021-08-19 2022-12-06 SK Hynix Inc. System and method for test precondition generation based on factory-formatted state of memory device

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5693189A (en) * 1979-12-18 1981-07-28 Fujitsu Ltd Field programable element
JPS63152100A (ja) * 1986-12-15 1988-06-24 Nec Corp 半導体記憶装置
JPH03241598A (ja) * 1990-02-19 1991-10-28 Fujitsu Ltd シグネチャー回路
JPH04106795A (ja) * 1990-08-28 1992-04-08 Nec Corp 半導体記憶装置
JP3223524B2 (ja) * 1991-06-20 2001-10-29 富士通株式会社 半導体記憶装置
JPH0563162A (ja) * 1991-08-30 1993-03-12 Sharp Corp 半導体記憶装置
JPH05189988A (ja) * 1992-01-10 1993-07-30 Sharp Corp 半導体記憶装置
JP2834364B2 (ja) * 1992-03-31 1998-12-09 シャープ株式会社 半導体記憶装置
US5357471A (en) * 1992-03-20 1994-10-18 National Semiconductor Corporation Fault locator architecture and method for memories
DE4223532A1 (de) * 1992-07-17 1994-01-20 Philips Patentverwaltung Schaltungsanordnung zum Prüfen der Adressierung wenigstens einer Matrix
DE4317175A1 (de) * 1993-05-22 1994-11-24 Bosch Gmbh Robert Selbsttesteinrichtung für Speicheranordnungen, Decoder od. dgl.
US5606193A (en) * 1994-10-03 1997-02-25 Sharp Kabushiki Kaisha DRAM and MROM cells with similar structure
TW318933B (en) * 1996-03-08 1997-11-01 Hitachi Ltd Semiconductor IC device having a memory and a logic circuit implemented with a single chip
JPH10320989A (ja) * 1997-05-16 1998-12-04 Toshiba Microelectron Corp 不揮発性半導体メモリ
US6950336B2 (en) * 2000-05-03 2005-09-27 Emosyn America, Inc. Method and apparatus for emulating an electrically erasable programmable read only memory (EEPROM) using non-volatile floating gate memory cells

Also Published As

Publication number Publication date
KR20040014948A (ko) 2004-02-18
EP1405316B1 (de) 2009-11-18
CN100568395C (zh) 2009-12-09
JP2004531020A (ja) 2004-10-07
US20040188716A1 (en) 2004-09-30
DE60234446D1 (de) 2009-12-31
KR100901963B1 (ko) 2009-06-10
WO2003003379A1 (en) 2003-01-09
CN1520597A (zh) 2004-08-11
US7664998B2 (en) 2010-02-16
EP1405316A1 (de) 2004-04-07

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