ATE449424T1 - Elektrisch löschbare und programmiebare nichtflüchtige halbleiterspeicheranordnung mit einschichtigem gatematerial und entsprechende speicherfläche - Google Patents

Elektrisch löschbare und programmiebare nichtflüchtige halbleiterspeicheranordnung mit einschichtigem gatematerial und entsprechende speicherfläche

Info

Publication number
ATE449424T1
ATE449424T1 AT03709915T AT03709915T ATE449424T1 AT E449424 T1 ATE449424 T1 AT E449424T1 AT 03709915 T AT03709915 T AT 03709915T AT 03709915 T AT03709915 T AT 03709915T AT E449424 T1 ATE449424 T1 AT E449424T1
Authority
AT
Austria
Prior art keywords
gate
transistor
zone
memory cell
active
Prior art date
Application number
AT03709915T
Other languages
English (en)
Inventor
Philippe Gendrier
Cyrille Dray
Richard Fournel
Sebastien Poirier
Daniel Caspar
Philippe Candelier
Original Assignee
St Microelectronics Sa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from FR0204690A external-priority patent/FR2838563B1/fr
Application filed by St Microelectronics Sa filed Critical St Microelectronics Sa
Application granted granted Critical
Publication of ATE449424T1 publication Critical patent/ATE449424T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/60—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the control gate being a doped region, e.g. single-poly memory cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0411—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having floating gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels

Landscapes

  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
AT03709915T 2002-04-15 2003-01-31 Elektrisch löschbare und programmiebare nichtflüchtige halbleiterspeicheranordnung mit einschichtigem gatematerial und entsprechende speicherfläche ATE449424T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR0204690A FR2838563B1 (fr) 2002-04-15 2002-04-15 Dispositif semiconducteur de memoire, non volatile, programmable et effacable electriquement, a une seule couche de materiau de grille
FR0209454A FR2838554B1 (fr) 2002-04-15 2002-07-25 Dispositif semiconducteur de memoire, non volatile, programmable et effacable electriquement, a une seule couche de materiau de grille, et plan memoire correspondant
PCT/FR2003/000311 WO2003088366A1 (fr) 2002-04-15 2003-01-31 Dispositif semiconducteur de memoire, non volatile, programmable et effacable electriquement, a une seule couche de materiau de grille, et plan memoire correspondant

Publications (1)

Publication Number Publication Date
ATE449424T1 true ATE449424T1 (de) 2009-12-15

Family

ID=28676465

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03709915T ATE449424T1 (de) 2002-04-15 2003-01-31 Elektrisch löschbare und programmiebare nichtflüchtige halbleiterspeicheranordnung mit einschichtigem gatematerial und entsprechende speicherfläche

Country Status (7)

Country Link
US (1) US7333362B2 (de)
EP (1) EP1495496B1 (de)
JP (1) JP4662529B2 (de)
AT (1) ATE449424T1 (de)
DE (1) DE60330130D1 (de)
FR (1) FR2838554B1 (de)
WO (1) WO2003088366A1 (de)

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JP2006202834A (ja) * 2005-01-18 2006-08-03 Seiko Epson Corp 半導体記憶装置および半導体記憶装置の製造方法
US7402874B2 (en) * 2005-04-29 2008-07-22 Texas Instruments Incorporated One time programmable EPROM fabrication in STI CMOS technology
JP2006344735A (ja) * 2005-06-08 2006-12-21 Seiko Epson Corp 半導体装置
FR2891398A1 (fr) * 2005-09-23 2007-03-30 St Microelectronics Sa Memoire non volatile reprogrammable
JP2007149947A (ja) * 2005-11-28 2007-06-14 Nec Electronics Corp 不揮発性メモリセル及びｅｅｐｒｏｍ
JP4435095B2 (ja) * 2006-01-04 2010-03-17 株式会社東芝 半導体システム
US20070247915A1 (en) * 2006-04-21 2007-10-25 Intersil Americas Inc. Multiple time programmable (MTP) PMOS floating gate-based non-volatile memory device for a general-purpose CMOS technology with thick gate oxide
CN100508169C (zh) * 2006-08-02 2009-07-01 联华电子股份有限公司 单层多晶硅可电除可程序只读存储单元的制造方法
US7759727B2 (en) 2006-08-21 2010-07-20 Intersil Americas Inc. Method and apparatus for shielding tunneling circuit and floating gate for integration of a floating gate voltage reference in a general purpose CMOS technology
JP4282705B2 (ja) * 2006-09-28 2009-06-24 株式会社東芝 エージングデバイス及びその製造方法
ES2322418B1 (es) * 2006-10-02 2010-03-22 Universidad De Almeria Sistema de coexpresion enzimatica para la produccion de d-aminoacidos.
US7663173B1 (en) * 2007-01-12 2010-02-16 National Semiconductor Corporation Non-volatile memory cell with poly filled trench as control gate and fully isolated substrate as charge storage
US7808034B1 (en) * 2007-01-12 2010-10-05 National Semiconductor Corporation Non-volatile memory cell with fully isolated substrate as charge storage
US7688627B2 (en) * 2007-04-24 2010-03-30 Intersil Americas Inc. Flash memory array of floating gate-based non-volatile memory cells
US7903465B2 (en) * 2007-04-24 2011-03-08 Intersil Americas Inc. Memory array of floating gate-based non-volatile memory cells
US8339862B2 (en) 2007-12-25 2012-12-25 Genusion, Inc. Nonvolatile semiconductor memory device
US8390052B2 (en) * 2008-04-02 2013-03-05 Sharp Kabushiki Kaisha Nonvolatile semiconductor memory device
TWI416713B (zh) * 2008-09-30 2013-11-21 國立大學法人九州工業大學 Floating Gate Type Nonvolatile Memory Configuration
US7983081B2 (en) * 2008-12-14 2011-07-19 Chip.Memory Technology, Inc. Non-volatile memory apparatus and method with deep N-well
US9324866B2 (en) 2012-01-23 2016-04-26 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and method for transistor with line end extension
JP5856836B2 (ja) * 2011-12-16 2016-02-10 セイコーインスツル株式会社 不揮発性半導体記憶装置
US10573751B2 (en) 2012-01-23 2020-02-25 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and method for providing line end extensions for fin-type active regions
JP2013187534A (ja) * 2012-03-08 2013-09-19 Ememory Technology Inc 消去可能プログラマブル単一ポリ不揮発性メモリ
EP2639817A1 (de) * 2012-03-12 2013-09-18 eMemory Technology Inc. Verfahren zum Herstellen einer Floating-gate-Speichervorrichtung mit einer einzelnen Polysiliziumschicht
CN102723333B (zh) * 2012-07-11 2014-09-03 无锡来燕微电子有限公司 一种具有p+浮栅电极的非挥发性记忆体及其制备方法
KR102166525B1 (ko) * 2014-04-18 2020-10-15 에스케이하이닉스 주식회사 단일층의 게이트를 갖는 불휘발성 메모리소자 및 그 동작방법과, 이를 이용한 메모리 셀어레이
CN108257963A (zh) * 2016-12-29 2018-07-06 北京同方微电子有限公司 一种闪存存储单元
US12051756B2 (en) * 2021-07-16 2024-07-30 Taiwan Semiconductor Manufacturing Company, Ltd. Flash memory device and method thereof

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Also Published As

Publication number Publication date
DE60330130D1 (de) 2009-12-31
EP1495496B1 (de) 2009-11-18
FR2838554B1 (fr) 2004-07-09
EP1495496A1 (de) 2005-01-12
FR2838554A1 (fr) 2003-10-17
JP2005522884A (ja) 2005-07-28
US7333362B2 (en) 2008-02-19
US20050219912A1 (en) 2005-10-06
JP4662529B2 (ja) 2011-03-30
WO2003088366A1 (fr) 2003-10-23

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