ATE449744T1 - Monolithisch integrierte einkristalline mikromechanische elemente - Google Patents

Monolithisch integrierte einkristalline mikromechanische elemente

Info

Publication number
ATE449744T1
ATE449744T1 AT07733870T AT07733870T ATE449744T1 AT E449744 T1 ATE449744 T1 AT E449744T1 AT 07733870 T AT07733870 T AT 07733870T AT 07733870 T AT07733870 T AT 07733870T AT E449744 T1 ATE449744 T1 AT E449744T1
Authority
AT
Austria
Prior art keywords
porous
domain
sacrificial layer
conducting property
exposed surface
Prior art date
Application number
AT07733870T
Other languages
English (en)
Original Assignee
Mta Mueszaki Fiz Es Anyagtudom
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mta Mueszaki Fiz Es Anyagtudom filed Critical Mta Mueszaki Fiz Es Anyagtudom
Application granted granted Critical
Publication of ATE449744T1 publication Critical patent/ATE449744T1/de

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00222—Integrating an electronic processing unit with a micromechanical structure
    • B81C1/00246—Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L5/00—Apparatus for, or methods of, measuring force, work, mechanical power, or torque, specially adapted for specific purposes
    • G01L5/22—Apparatus for, or methods of, measuring force, work, mechanical power, or torque, specially adapted for specific purposes for measuring the force applied to control members, e.g. control members of vehicles, triggers
    • G01L5/226—Apparatus for, or methods of, measuring force, work, mechanical power, or torque, specially adapted for specific purposes for measuring the force applied to control members, e.g. control members of vehicles, triggers to manipulators, e.g. the force due to gripping
    • G01L5/228—Apparatus for, or methods of, measuring force, work, mechanical power, or torque, specially adapted for specific purposes for measuring the force applied to control members, e.g. control members of vehicles, triggers to manipulators, e.g. the force due to gripping using tactile array force sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0264—Pressure sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0292—Sensors not provided for in B81B2201/0207 - B81B2201/0285
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/01—Suspended structures, i.e. structures allowing a movement
    • B81B2203/0127—Diaphragms, i.e. structures separating two media that can control the passage from one medium to another; Membranes, i.e. diaphragms with filtering function
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2207/00—Microstructural systems or auxiliary parts thereof
    • B81B2207/01—Microstructural systems or auxiliary parts thereof comprising a micromechanical device connected to control or processing electronics, i.e. Smart-MEMS
    • B81B2207/015—Microstructural systems or auxiliary parts thereof comprising a micromechanical device connected to control or processing electronics, i.e. Smart-MEMS the micromechanical device and the control or processing electronics being integrated on the same substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0111—Bulk micromachining
    • B81C2201/0115—Porous silicon
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/07—Integrating an electronic processing unit with a micromechanical structure
    • B81C2203/0707—Monolithic integration, i.e. the electronic processing unit is formed on or in the same substrate as the micromechanical structure
    • B81C2203/0714—Forming the micromechanical structure with a CMOS process
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/07—Integrating an electronic processing unit with a micromechanical structure
    • B81C2203/0707—Monolithic integration, i.e. the electronic processing unit is formed on or in the same substrate as the micromechanical structure
    • B81C2203/0742—Interleave, i.e. simultaneously forming the micromechanical structure and the CMOS circuit
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/42—Piezoelectric device making

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Pressure Sensors (AREA)
  • Micromachines (AREA)
  • Silicon Compounds (AREA)
  • Weting (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
AT07733870T 2006-06-13 2007-06-13 Monolithisch integrierte einkristalline mikromechanische elemente ATE449744T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
HU0600488A HUP0600488A2 (en) 2006-06-13 2006-06-13 Method for producing micromechanical elements can be integrated into cmos technology, carrying monolith si and monolith sio produced by porous si micromanufacturing process
PCT/HU2007/000053 WO2007144677A2 (en) 2006-06-13 2007-06-13 Cmos integrated process for fabricating monocrystalline silicon micromechanical elements by porous silicon micromachining and sensor chip comprising such element

Publications (1)

Publication Number Publication Date
ATE449744T1 true ATE449744T1 (de) 2009-12-15

Family

ID=89986840

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07733870T ATE449744T1 (de) 2006-06-13 2007-06-13 Monolithisch integrierte einkristalline mikromechanische elemente

Country Status (6)

Country Link
US (1) US8115240B2 (de)
EP (1) EP2027058B1 (de)
AT (1) ATE449744T1 (de)
DE (1) DE602007003470D1 (de)
HU (1) HUP0600488A2 (de)
WO (1) WO2007144677A2 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
HUP0600488A2 (en) * 2006-06-13 2008-05-28 Mta Mueszaki Fiz Es Anyagtudom Method for producing micromechanical elements can be integrated into cmos technology, carrying monolith si and monolith sio produced by porous si micromanufacturing process
TWI373450B (en) * 2009-07-29 2012-10-01 Pixart Imaging Inc Microelectronic device and method for fabricating mems resonator thereof
CN105664883B (zh) * 2009-09-01 2020-09-08 蓝区技术有限公司 用于气体处理的系统和方法
DE102011081033B4 (de) * 2011-08-16 2022-02-17 Robert Bosch Gmbh Verfahren zur Herstellung einer mikromechanischen Struktur und mikromechanische Struktur
CN103644985A (zh) * 2013-12-11 2014-03-19 江苏物联网研究发展中心 多量程cmos mems电容式压力传感器芯片
WO2018067136A1 (en) * 2016-10-05 2018-04-12 Hewlett-Packard Development Company, L.P. Insulated sensors
DE102017218883A1 (de) * 2017-10-23 2019-04-25 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Mikroelektromechanisches Bauteil sowie ein Verfahren zu seiner Herstellung

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4745812A (en) * 1987-03-25 1988-05-24 The United States Of America As Represented By The Secretary Of The Army Triaxial tactile sensor
US5055838A (en) * 1988-12-09 1991-10-08 The Regents Of The University Of Michigan Silicon tactile imaging array and method of making same
US5237879A (en) * 1991-10-11 1993-08-24 At&T Bell Laboratories Apparatus for dynamically varying the resolution of a tactile sensor array
CA2203297A1 (en) * 1991-12-13 1993-06-14 American Telephone And Telegraph Company Intelligent work surfaces
US5760530A (en) * 1992-12-22 1998-06-02 The United States Of America As Represented By The Secretary Of The Air Force Piezoelectric tactile sensor
JP3399660B2 (ja) * 1994-10-06 2003-04-21 株式会社東海理化電機製作所 表面型の加速度センサの製造方法
US5604144A (en) * 1995-05-19 1997-02-18 Kulite Semiconductor Products, Inc. Method for fabricating active devices on a thin membrane structure using porous silicon or porous silicon carbide
SG96541A1 (en) * 1997-08-14 2003-06-16 Inst Of Microelectronics Design of a novel tactile sensor
SG68002A1 (en) * 1997-11-25 1999-10-19 Inst Of Microelectronics Natio Cmos compatible integrated pressure sensor
DE10064494A1 (de) * 2000-12-22 2002-07-04 Bosch Gmbh Robert Verfahren zur Herstellung eines Halbleiterbauelements sowie ein nach dem Verfahren hergestelltes Halbleiterbauelement, wobei das Halbleiterbauelement insbesondere eine bewegliche Masse aufweist
US7521257B2 (en) * 2003-02-11 2009-04-21 The Board Of Regents Of The Nevada System Of Higher Education On Behalf Of The University Of Nevada, Reno Chemical sensor with oscillating cantilevered probe and mechanical stop
US7260980B2 (en) * 2003-03-11 2007-08-28 Adams Jesse D Liquid cell and passivated probe for atomic force microscopy and chemical sensing
WO2005001422A2 (en) * 2003-06-06 2005-01-06 The Board Of Trustees Of The University Of Illinois Sensor chip and apparatus for tactile and/or flow
GB2437753B8 (en) * 2004-10-01 2009-05-20 Nevada System Of Higher Education Cantilevered probe detector with piezoelectric element
FR2883372B1 (fr) * 2005-03-17 2007-06-29 Commissariat Energie Atomique Dispositif de mesure de force par detection resistive a double pont de wheastone
US8127623B2 (en) * 2005-05-18 2012-03-06 Pressure Profile Systems Inc. Capacitive tactile tile sensor
WO2007143123A2 (en) * 2006-06-02 2007-12-13 The Board Of Trustees Of The University Of Illinois Micromachined artificial haircell
HUP0600488A2 (en) * 2006-06-13 2008-05-28 Mta Mueszaki Fiz Es Anyagtudom Method for producing micromechanical elements can be integrated into cmos technology, carrying monolith si and monolith sio produced by porous si micromanufacturing process

Also Published As

Publication number Publication date
HU0600488D0 (en) 2006-08-28
EP2027058A2 (de) 2009-02-25
DE602007003470D1 (de) 2010-01-07
WO2007144677A8 (en) 2008-04-10
HUP0600488A2 (en) 2008-05-28
US20090261387A1 (en) 2009-10-22
EP2027058B1 (de) 2009-11-25
WO2007144677A3 (en) 2008-02-14
WO2007144677A2 (en) 2007-12-21
US8115240B2 (en) 2012-02-14

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