ATE502893T1 - Ätzverfahren mit verwendung eines opfersubstrats - Google Patents

Ätzverfahren mit verwendung eines opfersubstrats

Info

Publication number
ATE502893T1
ATE502893T1 AT05851235T AT05851235T ATE502893T1 AT E502893 T1 ATE502893 T1 AT E502893T1 AT 05851235 T AT05851235 T AT 05851235T AT 05851235 T AT05851235 T AT 05851235T AT E502893 T1 ATE502893 T1 AT E502893T1
Authority
AT
Austria
Prior art keywords
silicon substrate
etching method
sacrificial substrate
sacrificial
separate
Prior art date
Application number
AT05851235T
Other languages
English (en)
Inventor
Jeffrey Birkmeyer
Stephen Deming
Original Assignee
Fujifilm Dimatix Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Dimatix Inc filed Critical Fujifilm Dimatix Inc
Application granted granted Critical
Publication of ATE502893T1 publication Critical patent/ATE502893T1/de

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00Manufacture or treatment of devices or systems in or on a substrate
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41JTYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01Ink jet
    • B41J2/135Nozzles
    • B41J2/16Production of nozzles
    • B41J2/1607Production of print heads with piezoelectric elements
    • B41J2/161Production of print heads with piezoelectric elements of film type, deformed by bending and disposed on a diaphragm
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41JTYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01Ink jet
    • B41J2/135Nozzles
    • B41J2/16Production of nozzles
    • B41J2/1621Manufacturing processes
    • B41J2/1623Manufacturing processes bonding and adhesion
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41JTYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01Ink jet
    • B41J2/135Nozzles
    • B41J2/16Production of nozzles
    • B41J2/1621Manufacturing processes
    • B41J2/1626Manufacturing processes etching
    • B41J2/1628Manufacturing processes etching dry etching
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41JTYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01Ink jet
    • B41J2/135Nozzles
    • B41J2/16Production of nozzles
    • B41J2/1621Manufacturing processes
    • B41J2/1626Manufacturing processes etching
    • B41J2/1629Manufacturing processes etching wet etching
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41JTYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01Ink jet
    • B41J2/135Nozzles
    • B41J2/16Production of nozzles
    • B41J2/1621Manufacturing processes
    • B41J2/1631Manufacturing processes photolithography
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41JTYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01Ink jet
    • B41J2/135Nozzles
    • B41J2/16Production of nozzles
    • B41J2/1621Manufacturing processes
    • B41J2/1632Manufacturing processes machining
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41JTYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01Ink jet
    • B41J2/135Nozzles
    • B41J2/16Production of nozzles
    • B41J2/1621Manufacturing processes
    • B41J2/1635Manufacturing processes dividing the wafer into individual chips
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41JTYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01Ink jet
    • B41J2/135Nozzles
    • B41J2/16Production of nozzles
    • B41J2/1621Manufacturing processes
    • B41J2/1637Manufacturing processes molding
    • B41J2/1639Manufacturing processes molding sacrificial molding
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41JTYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01Ink jet
    • B41J2/135Nozzles
    • B41J2/16Production of nozzles
    • B41J2/1621Manufacturing processes
    • B41J2/164Manufacturing processes thin film formation
    • B41J2/1645Manufacturing processes thin film formation thin film formation by spincoating
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C99/00Subject matter not provided for in other groups of this subclass
    • B81C99/0005Apparatus specially adapted for the manufacture or treatment of microstructural devices or systems, or methods for manufacturing the same
    • B81C99/001Apparatus specially adapted for the manufacture or treatment of microstructural devices or systems, or methods for manufacturing the same for cutting, cleaving or grinding
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C99/00Subject matter not provided for in other groups of this subclass
    • B81C99/0075Manufacture of substrate-free structures
    • B81C99/008Manufacture of substrate-free structures separating the processed structure from a mother substrate
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01Manufacture or treatment
    • H10W10/011Manufacture or treatment of isolation regions comprising dielectric materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10Isolation regions comprising dielectric materials
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41JTYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01Ink jet
    • B41J2/135Nozzles
    • B41J2/14Structure thereof only for on-demand ink jet heads
    • B41J2002/14403Structure thereof only for on-demand ink jet heads including a filter
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/53Means to assemble or disassemble
    • Y10T29/53983Work-supported apparatus

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mechanical Engineering (AREA)
  • Micromachines (AREA)
  • Particle Formation And Scattering Control In Inkjet Printers (AREA)
  • Weting (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AT05851235T 2004-10-21 2005-10-21 Ätzverfahren mit verwendung eines opfersubstrats ATE502893T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US62150704P 2004-10-21 2004-10-21
PCT/US2005/038007 WO2006047326A1 (en) 2004-10-21 2005-10-21 Sacrificial substrate for etching

Publications (1)

Publication Number Publication Date
ATE502893T1 true ATE502893T1 (de) 2011-04-15

Family

ID=35735134

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05851235T ATE502893T1 (de) 2004-10-21 2005-10-21 Ätzverfahren mit verwendung eines opfersubstrats

Country Status (9)

Country Link
US (1) US7622048B2 (de)
EP (1) EP1814817B1 (de)
JP (1) JP5313501B2 (de)
KR (1) KR101263276B1 (de)
CN (1) CN101080360B (de)
AT (1) ATE502893T1 (de)
DE (1) DE602005027102D1 (de)
TW (1) TWI401739B (de)
WO (1) WO2006047326A1 (de)

Families Citing this family (77)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060276008A1 (en) * 2005-06-02 2006-12-07 Vesa-Pekka Lempinen Thinning
EP1910085B1 (de) * 2005-07-01 2012-08-01 Fujifilm Dimatix, Inc. Nicht benetzender überzug auf einem fluidejektor
US7779522B2 (en) * 2006-05-05 2010-08-24 Fujifilm Dimatix, Inc. Method for forming a MEMS
US7425465B2 (en) * 2006-05-15 2008-09-16 Fujifilm Diamatix, Inc. Method of fabricating a multi-post structures on a substrate
US8619378B2 (en) 2010-11-15 2013-12-31 DigitalOptics Corporation MEMS Rotational comb drive Z-stage
US8768157B2 (en) 2011-09-28 2014-07-01 DigitalOptics Corporation MEMS Multiple degree of freedom actuator
JP5357768B2 (ja) * 2006-12-01 2013-12-04 フジフィルム ディマティックス, インコーポレイテッド 液体吐出装置上への非湿潤性コーティング
JP2010517816A (ja) * 2007-01-31 2010-05-27 フジフィルム ディマティックス, インコーポレイテッド コンフィギュラブル・メモリを有するプリンタ
US8455271B2 (en) * 2007-03-29 2013-06-04 Xerox Corporation Highly integrated wafer bonded MEMS devices with release-free membrane manufacture for high density print heads
EP1997638B1 (de) 2007-05-30 2012-11-21 Océ-Technologies B.V. Verfahren zur Erzeugung eines Arrays piezoelektrischer Aktuatoren auf einer Membran
JP2009083140A (ja) * 2007-09-27 2009-04-23 Fujifilm Corp 液体吐出ヘッド及びその製造方法
JP2011522717A (ja) * 2008-05-21 2011-08-04 富士フイルム株式会社 液滴吐出装置の駆動
WO2009142929A1 (en) * 2008-05-23 2009-11-26 Fujifilm Corporation Method and apparatus for substrate bonding
EP2332169B1 (de) * 2008-09-18 2016-02-24 Fujifilm Dimatix, Inc. Kleben auf einem siliziumsubstrat mit einer kerbe
US8173030B2 (en) 2008-09-30 2012-05-08 Eastman Kodak Company Liquid drop ejector having self-aligned hole
JP2012507418A (ja) 2008-10-30 2012-03-29 富士フイルム株式会社 流体吐出装置上の非湿潤性被膜
US8147630B2 (en) * 2008-11-16 2012-04-03 Suss Microtec Lithography, Gmbh Method and apparatus for wafer bonding with enhanced wafer mating
JP5241017B2 (ja) * 2009-02-10 2013-07-17 富士フイルム株式会社 液体吐出ヘッド及び液体吐出装置並びに画像形成装置
US8061820B2 (en) * 2009-02-19 2011-11-22 Fujifilm Corporation Ring electrode for fluid ejection
JP5207544B2 (ja) * 2009-02-24 2013-06-12 富士フイルム株式会社 インクジェットヘッドの製造方法及びインクジェット記録装置
US8931431B2 (en) * 2009-03-25 2015-01-13 The Regents Of The University Of Michigan Nozzle geometry for organic vapor jet printing
US8613496B2 (en) * 2009-03-25 2013-12-24 The Regents Of The University Of Michigan Compact organic vapor jet printing print head
US8950459B2 (en) 2009-04-16 2015-02-10 Suss Microtec Lithography Gmbh Debonding temporarily bonded semiconductor wafers
US8262200B2 (en) * 2009-09-15 2012-09-11 Fujifilm Corporation Non-wetting coating on a fluid ejector
NL2005265A (en) 2009-10-07 2011-04-11 Asml Netherlands Bv Imprint lithography apparatus and method.
US20110168317A1 (en) * 2010-01-12 2011-07-14 Fujifilm Corporation Controlled Bond Wave Over Patterned Wafer
CN102905903B (zh) * 2010-05-27 2015-04-22 惠普发展公司,有限责任合伙企业 打印头和相关方法和系统
JP2013538446A (ja) 2010-07-26 2013-10-10 富士フイルム株式会社 湾曲圧電膜を有するデバイスの形成
US8358925B2 (en) 2010-11-15 2013-01-22 DigitalOptics Corporation MEMS Lens barrel with MEMS actuators
US8521017B2 (en) 2010-11-15 2013-08-27 DigitalOptics Corporation MEMS MEMS actuator alignment
US8947797B2 (en) 2010-11-15 2015-02-03 DigitalOptics Corporation MEMS Miniature MEMS actuator assemblies
US8803256B2 (en) 2010-11-15 2014-08-12 DigitalOptics Corporation MEMS Linearly deployed actuators
US9515579B2 (en) 2010-11-15 2016-12-06 Digitaloptics Corporation MEMS electrical contact systems and methods
US8637961B2 (en) 2010-11-15 2014-01-28 DigitalOptics Corporation MEMS MEMS actuator device
US9061883B2 (en) 2010-11-15 2015-06-23 DigitalOptics Corporation MEMS Actuator motion control features
US8337103B2 (en) 2010-11-15 2012-12-25 DigitalOptics Corporation MEMS Long hinge actuator snubbing
US8941192B2 (en) 2010-11-15 2015-01-27 DigitalOptics Corporation MEMS MEMS actuator device deployment
US9052567B2 (en) 2010-11-15 2015-06-09 DigitalOptics Corporation MEMS Actuator inside of motion control
US8605375B2 (en) 2010-11-15 2013-12-10 DigitalOptics Corporation MEMS Mounting flexure contacts
US8547627B2 (en) 2010-11-15 2013-10-01 DigitalOptics Corporation MEMS Electrical routing
US8430580B2 (en) 2010-11-15 2013-04-30 DigitalOptics Corporation MEMS Rotationally deployed actuators
US8884381B2 (en) 2010-11-15 2014-11-11 DigitalOptics Corporation MEMS Guard trench
US9019390B2 (en) 2011-09-28 2015-04-28 DigitalOptics Corporation MEMS Optical image stabilization using tangentially actuated MEMS devices
US8604663B2 (en) 2010-11-15 2013-12-10 DigitalOptics Corporation MEMS Motion controlled actuator
US8608393B2 (en) 2010-11-15 2013-12-17 DigitalOptics Corporation MEMS Capillary actuator deployment
US9352962B2 (en) 2010-11-15 2016-05-31 DigitalOptics Corporation MEMS MEMS isolation structures
US9070861B2 (en) 2011-02-15 2015-06-30 Fujifilm Dimatix, Inc. Piezoelectric transducers using micro-dome arrays
US8628677B2 (en) 2011-03-31 2014-01-14 Fujifilm Corporation Forming curved features using a shadow mask
US8404132B2 (en) 2011-03-31 2013-03-26 Fujifilm Corporation Forming a membrane having curved features
SG193904A1 (en) * 2011-04-11 2013-11-29 Ev Group E Thallner Gmbh Flexible carrier mount, device and method for detaching a carrier substrate
US8450213B2 (en) 2011-04-13 2013-05-28 Fujifilm Corporation Forming a membrane having curved features
CN102295266B (zh) * 2011-06-30 2015-03-04 西北工业大学 一种获得精密齐整棱边的mems划片方法
US8855476B2 (en) 2011-09-28 2014-10-07 DigitalOptics Corporation MEMS MEMS-based optical image stabilization
US8869625B2 (en) 2011-09-28 2014-10-28 DigitalOptics Corporation MEMS MEMS actuator/sensor
US9281763B2 (en) 2011-09-28 2016-03-08 DigitalOptics Corporation MEMS Row and column actuator control
US8571405B2 (en) 2011-09-28 2013-10-29 DigitalOptics Corporation MEMS Surface mount actuator
US9350271B2 (en) 2011-09-28 2016-05-24 DigitalOptics Corporation MEMS Cascaded electrostatic actuator
US8616791B2 (en) 2011-09-28 2013-12-31 DigitalOptics Corporation MEMS Rotationally deployed actuator devices
US8853975B2 (en) 2011-09-28 2014-10-07 DigitalOptics Corporation MEMS Electrostatic actuator control
WO2013091714A1 (de) 2011-12-22 2013-06-27 Ev Group E. Thallner Gmbh Biegsame substrathalterung, vorrichtung und verfahren zum lösen eines ersten substrats
CN104422548B (zh) * 2013-08-28 2016-12-28 中芯国际集成电路制造(北京)有限公司 电容式压力传感器及其形成方法
US9508586B2 (en) 2014-10-17 2016-11-29 Taiwan Semiconductor Manufacturing Company, Ltd. Debonding schemes
US9630836B2 (en) * 2015-09-30 2017-04-25 Mems Drive, Inc. Simplified MEMS device fabrication process
TW201737766A (zh) * 2016-01-21 2017-10-16 康寧公司 處理基板的方法
TWI663121B (zh) * 2018-11-07 2019-06-21 研能科技股份有限公司 微流道結構之製造方法
TWI686350B (zh) * 2018-11-07 2020-03-01 研能科技股份有限公司 微流道結構
CN111151311B (zh) * 2018-11-07 2021-10-12 研能科技股份有限公司 微流道结构的制造方法
TWI722339B (zh) * 2018-11-23 2021-03-21 研能科技股份有限公司 微流體致動器
TWI666165B (zh) * 2018-11-23 2019-07-21 研能科技股份有限公司 微流體致動器之製造方法
CN111217317B (zh) * 2018-11-23 2023-09-05 研能科技股份有限公司 微流体致动器的制造方法
CN111217316B (zh) * 2018-11-23 2025-05-13 研能科技股份有限公司 微流体致动器
TWI710517B (zh) * 2018-11-30 2020-11-21 研能科技股份有限公司 微流體致動器
CN111252727B (zh) * 2018-11-30 2025-05-27 研能科技股份有限公司 微流体致动器
US11433670B2 (en) 2019-04-29 2022-09-06 Hewlett-Packard Development Company, L.P. Conductive elements electrically coupled to fluidic dies
US11864465B2 (en) * 2020-05-22 2024-01-02 Wisconsin Alumni Research Foundation Integration of semiconductor membranes with piezoelectric substrates
WO2022071605A1 (ja) * 2020-10-02 2022-04-07 株式会社村田製作所 弾性波装置及び弾性波装置の製造方法
WO2022094350A1 (en) * 2020-10-29 2022-05-05 Board Of Regents, The University Of Texas System Equipment and process technologies for catalyst influenced chemical etching

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2752332B1 (fr) * 1996-08-12 1998-09-11 Commissariat Energie Atomique Dispositif de decollement de plaquettes et procede de mise en oeuvre de ce dispositif
US6146979A (en) * 1997-05-12 2000-11-14 Silicon Genesis Corporation Pressurized microbubble thin film separation process using a reusable substrate
US6393685B1 (en) * 1997-06-10 2002-05-28 The Regents Of The University Of California Microjoinery methods and devices
US6103585A (en) * 1998-06-09 2000-08-15 Siemens Aktiengesellschaft Method of forming deep trench capacitors
JP3901862B2 (ja) * 1998-12-21 2007-04-04 信越半導体株式会社 ウェーハの結合方法
JP2000349265A (ja) * 1999-03-26 2000-12-15 Canon Inc 半導体部材の作製方法
KR100327336B1 (ko) 1999-08-03 2002-03-06 윤종용 미세 구조물 제조에 사용되는 물질층 식각 방법 및 이를 이용한 리소그래피 마스크 제조 방법
DE19958803C1 (de) * 1999-12-07 2001-08-30 Fraunhofer Ges Forschung Verfahren und Vorrichtung zum Handhaben von Halbleitersubstraten bei der Prozessierung und/oder Bearbeitung
US6902987B1 (en) * 2000-02-16 2005-06-07 Ziptronix, Inc. Method for low temperature bonding and bonded structure
US6326285B1 (en) * 2000-02-24 2001-12-04 International Business Machines Corporation Simultaneous multiple silicon on insulator (SOI) wafer production
US6808956B2 (en) * 2000-12-27 2004-10-26 Honeywell International Inc. Thin micromachined structures
JP3764343B2 (ja) * 2001-02-28 2006-04-05 株式会社東芝 半導体装置の製造方法
US7045878B2 (en) * 2001-05-18 2006-05-16 Reveo, Inc. Selectively bonded thin film layer and substrate layer for processing of useful devices
US6586315B1 (en) 2001-12-21 2003-07-01 Texas Instruments Incorporated Whole wafer MEMS release process
FR2834381B1 (fr) * 2002-01-03 2004-02-27 Soitec Silicon On Insulator Dispositif de coupe de couche d'un substrat, et procede associe
FR2834380B1 (fr) * 2002-01-03 2005-02-18 Soitec Silicon On Insulator Dispositif de coupe de couche d'un substrat, et procede associe
KR100566810B1 (ko) * 2004-04-20 2006-04-03 한국전자통신연구원 근접광 탐침의 제작 방법

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EP1814817A1 (de) 2007-08-08
TW200618100A (en) 2006-06-01
KR20070073919A (ko) 2007-07-10
US7622048B2 (en) 2009-11-24
DE602005027102D1 (de) 2011-05-05
WO2006047326A1 (en) 2006-05-04
JP2008517780A (ja) 2008-05-29
JP5313501B2 (ja) 2013-10-09
KR101263276B1 (ko) 2013-05-10
EP1814817B1 (de) 2011-03-23
TWI401739B (zh) 2013-07-11
HK1105943A1 (en) 2008-02-29
US20080020573A1 (en) 2008-01-24
CN101080360B (zh) 2012-10-31
CN101080360A (zh) 2007-11-28
WO2006047326B1 (en) 2006-06-15

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