ATE462545T1 - Verfahren zur herstellung einer halbleitervorrichtung und dadurch hergestellte halbleitervorrichtung - Google Patents

Verfahren zur herstellung einer halbleitervorrichtung und dadurch hergestellte halbleitervorrichtung

Info

Publication number
ATE462545T1
ATE462545T1 AT07714631T AT07714631T ATE462545T1 AT E462545 T1 ATE462545 T1 AT E462545T1 AT 07714631 T AT07714631 T AT 07714631T AT 07714631 T AT07714631 T AT 07714631T AT E462545 T1 ATE462545 T1 AT E462545T1
Authority
AT
Austria
Prior art keywords
semiconductor device
producing
produced therefrom
mold
unsealed
Prior art date
Application number
AT07714631T
Other languages
English (en)
Inventor
Yoshitsugu Morita
Minoru Isshiki
Hiroshi Ueki
Tomoko Kato
Original Assignee
Dow Corning Toray Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Corning Toray Co Ltd filed Critical Dow Corning Toray Co Ltd
Application granted granted Critical
Publication of ATE462545T1 publication Critical patent/ATE462545T1/de

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
    • B29C43/02—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles
    • B29C43/18—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles incorporating preformed parts or layers, e.g. compression moulding around inserts or for coating articles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
    • B29C43/32—Component parts, details or accessories; Auxiliary operations
    • B29C43/50—Removing moulded articles
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • C08L83/06—Polysiloxanes containing silicon bound to oxygen-containing groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/14—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H10W74/016—Manufacture or treatment using moulds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/47—Encapsulations, e.g. protective coatings characterised by their materials comprising organic materials, e.g. plastics or resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Casting Or Compression Moulding Of Plastics Or The Like (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Epoxy Resins (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AT07714631T 2006-02-23 2007-02-14 Verfahren zur herstellung einer halbleitervorrichtung und dadurch hergestellte halbleitervorrichtung ATE462545T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006046872A JP5207591B2 (ja) 2006-02-23 2006-02-23 半導体装置の製造方法および半導体装置
PCT/JP2007/053131 WO2007099823A1 (en) 2006-02-23 2007-02-14 Method of manufacturing a semiconductor device and a semiconductor device produced thereby

Publications (1)

Publication Number Publication Date
ATE462545T1 true ATE462545T1 (de) 2010-04-15

Family

ID=38016612

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07714631T ATE462545T1 (de) 2006-02-23 2007-02-14 Verfahren zur herstellung einer halbleitervorrichtung und dadurch hergestellte halbleitervorrichtung

Country Status (10)

Country Link
US (1) US8802506B2 (de)
EP (1) EP1986832B1 (de)
JP (1) JP5207591B2 (de)
KR (1) KR101349619B1 (de)
CN (1) CN101389461B (de)
AT (1) ATE462545T1 (de)
DE (1) DE602007005610D1 (de)
MY (1) MY149696A (de)
TW (1) TW200741906A (de)
WO (1) WO2007099823A1 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4931366B2 (ja) * 2005-04-27 2012-05-16 東レ・ダウコーニング株式会社 硬化性シリコーン組成物および電子部品
JP5285846B2 (ja) * 2006-09-11 2013-09-11 東レ・ダウコーニング株式会社 硬化性シリコーン組成物および電子部品
JP5306592B2 (ja) * 2006-12-04 2013-10-02 東レ・ダウコーニング株式会社 硬化性エポキシ樹脂組成物、硬化物、およびその用途
JP5547369B2 (ja) * 2007-09-28 2014-07-09 東レ・ダウコーニング株式会社 硬化性液状エポキシ樹脂組成物およびその硬化物
JP5422109B2 (ja) 2007-10-16 2014-02-19 東レ・ダウコーニング株式会社 硬化性シリコーン組成物およびその硬化物
US8427269B1 (en) * 2009-06-29 2013-04-23 VI Chip, Inc. Encapsulation method and apparatus for electronic modules
WO2012053526A1 (ja) * 2010-10-20 2012-04-26 旭化成イーマテリアルズ株式会社 酸化物ナノ粒子反応生成物及びシリコーン組成物
US9679783B2 (en) * 2011-08-11 2017-06-13 Taiwan Semiconductor Manufacturing Company, Ltd. Molding wafer chamber
DE102011082157A1 (de) * 2011-09-06 2013-03-07 Osram Opto Semiconductors Gmbh Presswerkzeug und Verfahrenzum Herstellen eines Silikonelements
TWI473839B (zh) * 2011-11-25 2015-02-21 Ｌｇ化學股份有限公司 可固化組成物
TWI505551B (zh) * 2012-05-28 2015-10-21 Wistron Neweb Corp 天線的形成方法及壓合頭
US20150221578A1 (en) * 2014-02-05 2015-08-06 Infineon Technologies Ag Semiconductor package and method for producing a semiconductor
US10020262B2 (en) * 2016-06-30 2018-07-10 Intel Corporation High resolution solder resist material for silicon bridge application
CN110462875B (zh) 2017-02-08 2023-04-18 埃肯有机硅美国公司 具有改进的热管理的二次电池组
US11028269B2 (en) 2017-05-19 2021-06-08 Shin-Etsu Chemical Co., Ltd Silicone-modified epoxy resin composition and semiconductor device
CN108770212B (zh) * 2018-07-12 2023-07-25 深圳智慧者机器人科技有限公司 Pcb板自动包胶装置
EP3734065B1 (de) * 2019-04-30 2023-06-07 memetis GmbH Aktuatoranordnung
KR20220069996A (ko) * 2019-09-23 2022-05-27 피피지 인더스트리즈 오하이오 인코포레이티드 경화성 조성물
CN112873810A (zh) * 2019-11-29 2021-06-01 复盛应用科技股份有限公司 高尔夫球杆头盖片制造方法及模具
US11729915B1 (en) 2022-03-22 2023-08-15 Tactotek Oy Method for manufacturing a number of electrical nodes, electrical node module, electrical node, and multilayer structure

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR930001988B1 (ko) * 1988-04-05 1993-03-20 미쓰비시뎅끼 가부시끼가이샤 반도체 봉지용 에폭시 수지조성물
JPH0611795B2 (ja) * 1990-05-28 1994-02-16 信越化学工業株式会社 エポキシ基含有シリコーンエラストマー微粉末
JP3251655B2 (ja) 1992-08-05 2002-01-28 東レ・ダウコーニング・シリコーン株式会社 ジオルガノポリシロキサンおよびその製造方法
CN2160156Y (zh) * 1993-04-08 1994-03-30 深圳市沙头角展业公司 柔性半导体彩色发光带
JP2812139B2 (ja) * 1993-04-27 1998-10-22 信越化学工業株式会社 エポキシ樹脂組成物
JPH07133351A (ja) * 1993-11-08 1995-05-23 Shin Etsu Chem Co Ltd エポキシ変性シリコーンの製造方法
JP3288185B2 (ja) * 1994-10-07 2002-06-04 日立化成工業株式会社 電子部品封止用エポキシ樹脂成形材料及びそれを用いた半導体装置
JP3516764B2 (ja) 1995-03-08 2004-04-05 アピックヤマダ株式会社 リリースフィルムを用いる樹脂モールド装置及び樹脂モールド方法
JPH1177733A (ja) 1997-09-01 1999-03-23 Apic Yamada Kk 樹脂モールド方法及び樹脂モールド装置
JP3388537B2 (ja) 1998-05-15 2003-03-24 信越化学工業株式会社 半導体封止用エポキシ樹脂組成物及び半導体装置
JP4577536B2 (ja) * 1998-12-28 2010-11-10 ナガセケムテックス株式会社 エポキシ樹脂組成物およびそれを用いてｌｓｉを封止する方法
WO2000044806A1 (en) * 1999-01-29 2000-08-03 Arakawa Chemical Industries, Ltd. Hardener for epoxy resin, epoxy resin composition, and process for producing silane-modified phenolic resin
JP3494586B2 (ja) 1999-03-26 2004-02-09 アピックヤマダ株式会社 樹脂封止装置及び樹脂封止方法
JP3796648B2 (ja) * 1999-04-15 2006-07-12 信越化学工業株式会社 エポキシ樹脂組成物並びにこのエポキシ樹脂組成物を用いた積層フィルム及び半導体装置
JP4948716B2 (ja) * 2001-06-29 2012-06-06 東レ・ダウコーニング株式会社 硬化性エポキシ樹脂組成物
US6632892B2 (en) * 2001-08-21 2003-10-14 General Electric Company Composition comprising silicone epoxy resin, hydroxyl compound, anhydride and curing catalyst
JP4607429B2 (ja) 2003-03-25 2011-01-05 東レ・ダウコーニング株式会社 半導体装置の製造方法および半導体装置
KR100517075B1 (ko) * 2003-08-11 2005-09-26 삼성전자주식회사 반도체 소자 제조 방법
JP4803339B2 (ja) * 2003-11-20 2011-10-26 信越化学工業株式会社 エポキシ・シリコーン混成樹脂組成物及び発光半導体装置
JP5101788B2 (ja) * 2003-12-22 2012-12-19 東レ・ダウコーニング株式会社 半導体装置の製造方法および半導体装置
JP4903987B2 (ja) 2004-03-19 2012-03-28 東レ・ダウコーニング株式会社 半導体装置の製造方法
JP2006063092A (ja) 2004-07-29 2006-03-09 Dow Corning Toray Co Ltd 硬化性オルガノポリシロキサン組成物、その硬化方法、光半導体装置および接着促進剤
JP4676735B2 (ja) * 2004-09-22 2011-04-27 東レ・ダウコーニング株式会社 光半導体装置の製造方法および光半導体装置
JP5166677B2 (ja) * 2005-03-15 2013-03-21 東レ・ダウコーニング株式会社 硬化性シリコーン組成物および電子部品
JP5004433B2 (ja) * 2005-04-27 2012-08-22 東レ・ダウコーニング株式会社 硬化性シリコーン組成物およびその硬化物
JP4931366B2 (ja) * 2005-04-27 2012-05-16 東レ・ダウコーニング株式会社 硬化性シリコーン組成物および電子部品
JP5238157B2 (ja) * 2006-12-25 2013-07-17 東レ・ダウコーニング株式会社 硬化性シリコーン組成物および電子部品
JP5248012B2 (ja) * 2006-12-25 2013-07-31 東レ・ダウコーニング株式会社 硬化性シリコーン組成物

Also Published As

Publication number Publication date
KR101349619B1 (ko) 2014-02-14
EP1986832A1 (de) 2008-11-05
CN101389461A (zh) 2009-03-18
US8802506B2 (en) 2014-08-12
DE602007005610D1 (de) 2010-05-12
EP1986832B1 (de) 2010-03-31
WO2007099823A1 (en) 2007-09-07
JP5207591B2 (ja) 2013-06-12
JP2007224146A (ja) 2007-09-06
KR20080108089A (ko) 2008-12-11
MY149696A (en) 2013-09-30
CN101389461B (zh) 2011-02-09
TW200741906A (en) 2007-11-01
US20100213623A1 (en) 2010-08-26

Similar Documents

Publication Publication Date Title
DE602007005610D1 (de) Verfahren zur herstellung einer halbleitervorrichtung und dadurch hergestellte halbleitervorrichtung
ATE536558T1 (de) Optische bauelemente und silikonzusammensetzungen sowie verfahren zur herstellung der optischen bauelemente
TWI299748B (en) Adhesive composition, its manufacturing method, and adhesive film, substrate for carrying a semiconductor device and semiconductor device using such adhesive composition
TW200507042A (en) Process for fabricating electronic components using liquid injection molding
TW200640979A (en) Cured product of epoxy resin composition and method for producing the same, and photosemiconductor device using the same
DE602004023734D1 (de) Lösungsmittel-modifizierte harz-zusammensetzungen und verwendungsverfahren dafür
TW200715615A (en) PLCC package with integrated lens and method for making the package
MY156659A (en) Resin composition for encapsulating semiconductor and semiconductor device
ATE466903T1 (de) Härtbare silikonzusammensetzung und elektronikbauteil
SG158878A1 (en) Epoxy resin composition, method of rendering the same latent, and semiconductor device
PH12022550215A1 (en) Insulating resin composition, insulating resin cured body, layered body and circuit base board
EP4485074A4 (de) Harzzusammensetzung, gehärteter artikel, laminat, verfahren zur herstellung des gehärteten artikels, verfahren zur herstellung des laminats und halbleiterbauelement
TW201130058A (en) Method for manufacturing terminal structure and method for manufacturing electronic device
MY157414A (en) Epoxy resin composition and semiconductor device
SI2307360T1 (sl) Postopek za izdelavo oblikovanih teles z uporabo meĺ anice aminov z derivati gvanidina
ATE409712T1 (de) Epoxidharz zusammensetzung
TW200639982A (en) Method of manufacturing semiconductor device and compression molding device
ATE440125T1 (de) Oberflächenmodifiziertes corund sowie harzzusammensetzung
TW200501208A (en) Adhesive sheet for manufacturing semiconductor device, semiconductor device and manufacturing method using the same
WO2008117489A1 (ja) 半導体装置製造用接着フィルム
TW200624380A (en) Low-adhesion material and mold for molding resin using the same
SG158772A1 (en) Liquid resin composition, semiconductor chip with an adhesive layer, method of producing such materials, and semiconductor devices
TW200634095A (en) Polyoxyalkyleneamine modified polyamidepolyimide resin and composition thereof
TW200637901A (en) Flame-retardant curing agent containing phosphorus and its manufacturing method
JP2008078492A5 (de)

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties