ATE462991T1 - Belichtungsapparat und verfahren zur herstellung einer vorrichtung - Google Patents

Belichtungsapparat und verfahren zur herstellung einer vorrichtung

Info

Publication number
ATE462991T1
ATE462991T1 AT03250001T AT03250001T ATE462991T1 AT E462991 T1 ATE462991 T1 AT E462991T1 AT 03250001 T AT03250001 T AT 03250001T AT 03250001 T AT03250001 T AT 03250001T AT E462991 T1 ATE462991 T1 AT E462991T1
Authority
AT
Austria
Prior art keywords
space
exposure apparatus
optical path
stage
forms
Prior art date
Application number
AT03250001T
Other languages
English (en)
Inventor
Noriyasu Hasegawa
Eiji Sakamoto
Shigeru Terashima
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2002032274A external-priority patent/JP2003234281A/ja
Priority claimed from JP2002377086A external-priority patent/JP3809416B2/ja
Application filed by Canon Kk filed Critical Canon Kk
Application granted granted Critical
Publication of ATE462991T1 publication Critical patent/ATE462991T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70933—Purge, e.g. exchanging fluid or gas to remove pollutants
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus

Landscapes

  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Environmental & Geological Engineering (AREA)
  • Atmospheric Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
AT03250001T 2002-01-07 2003-01-02 Belichtungsapparat und verfahren zur herstellung einer vorrichtung ATE462991T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002000689 2002-01-07
JP2002032274A JP2003234281A (ja) 2002-02-08 2002-02-08 露光装置、デバイス製造方法
JP2002377086A JP3809416B2 (ja) 2002-01-07 2002-12-26 走査露光装置及びそれを用いたデバイス製造方法

Publications (1)

Publication Number Publication Date
ATE462991T1 true ATE462991T1 (de) 2010-04-15

Family

ID=27348060

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03250001T ATE462991T1 (de) 2002-01-07 2003-01-02 Belichtungsapparat und verfahren zur herstellung einer vorrichtung

Country Status (4)

Country Link
US (3) US6934003B2 (de)
EP (1) EP1326139B1 (de)
AT (1) ATE462991T1 (de)
DE (1) DE60331874D1 (de)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6954255B2 (en) * 2001-06-15 2005-10-11 Canon Kabushiki Kaisha Exposure apparatus
TWI278721B (en) * 2002-04-09 2007-04-11 Nikon Corp Exposure method, exposure apparatus, and manufacturing method of device
TWI347741B (en) * 2003-05-30 2011-08-21 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
KR101162527B1 (ko) * 2003-09-03 2012-07-09 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
US20050153424A1 (en) * 2004-01-08 2005-07-14 Derek Coon Fluid barrier with transparent areas for immersion lithography
CN1954408B (zh) * 2004-06-04 2012-07-04 尼康股份有限公司 曝光装置、曝光方法及元件制造方法
US20070103661A1 (en) * 2004-06-04 2007-05-10 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US20070222959A1 (en) * 2004-06-10 2007-09-27 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
KR20070026603A (ko) * 2004-06-10 2007-03-08 가부시키가이샤 니콘 노광 장치, 노광 방법, 및 디바이스 제조 방법
US7522261B2 (en) * 2004-09-24 2009-04-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2006245400A (ja) * 2005-03-04 2006-09-14 Canon Inc 光学装置およびデバイス製造方法。
JP3977377B2 (ja) * 2005-03-04 2007-09-19 キヤノン株式会社 露光装置およびデバイス製造方法
JP2006269942A (ja) * 2005-03-25 2006-10-05 Canon Inc 露光装置及びデバイス製造方法
US20070024982A1 (en) * 2005-06-14 2007-02-01 Carl Zeiss Smt Ag Imaging system for a microlithographic projection exposure system
JP4708876B2 (ja) * 2005-06-21 2011-06-22 キヤノン株式会社 液浸露光装置
JP2007067344A (ja) * 2005-09-02 2007-03-15 Canon Inc 露光装置および方法ならびにデバイス製造方法
US20080073596A1 (en) * 2006-08-24 2008-03-27 Asml Netherlands B.V. Lithographic apparatus and method
JP4966922B2 (ja) * 2008-07-07 2012-07-04 東京エレクトロン株式会社 レジスト処理装置、レジスト塗布現像装置、およびレジスト処理方法
SG159467A1 (en) * 2008-09-02 2010-03-30 Asml Netherlands Bv Fluid handling structure, lithographic apparatus and device manufacturing method
NL2006243A (en) * 2010-03-19 2011-09-20 Asml Netherlands Bv A lithographic apparatus, an illumination system, a projection system and a method of manufacturing a device using a lithographic apparatus.
JP5241862B2 (ja) 2011-01-01 2013-07-17 キヤノン株式会社 露光装置及びデバイスの製造方法
NL2008954A (en) 2011-07-08 2013-01-09 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.
KR102136825B1 (ko) * 2011-11-17 2020-07-24 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치 및 디바이스 제조 방법
JP6169114B2 (ja) 2012-03-14 2017-07-26 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置
NL2010916A (en) * 2012-07-06 2014-01-07 Asml Netherlands Bv A lithographic apparatus.
NL2012291A (en) 2013-02-20 2014-08-21 Asml Netherlands Bv Gas flow optimization in reticle stage environment.
US9488924B2 (en) 2014-01-07 2016-11-08 Applied Materials Israel Ltd. Cleaning an object within a non-vacuumed environment
KR101947049B1 (ko) * 2014-07-16 2019-05-16 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치 및 디바이스 제조 방법
CN107771303B (zh) * 2015-04-21 2021-06-04 Asml荷兰有限公司 光刻设备
NL2016873A (en) 2015-07-02 2017-01-17 Asml Netherlands Bv A Substrate Holder, a Lithographic Apparatus and Method of Manufacturing Devices.
US10788764B2 (en) 2016-06-17 2020-09-29 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and a method of forming a particle shield
US10168626B2 (en) 2016-06-17 2019-01-01 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and a method of forming a particle shield
US11397385B2 (en) 2016-06-17 2022-07-26 Taiwan Semiconductor Manufacturing Company, Ltd Apparatus and a method of forming a particle shield
CN107783283B (zh) * 2016-08-30 2020-01-24 上海微电子装备（集团）股份有限公司 镜片防污染装置及方法
NL2019411A (en) * 2016-09-02 2018-03-06 Asml Netherlands Bv Lithographic Apparatus
CN109283797B (zh) * 2017-07-21 2021-04-30 上海微电子装备（集团）股份有限公司 物镜保护装置、物镜系统以及光刻设备
KR20210145153A (ko) * 2019-04-01 2021-12-01 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치 및 그와 관련된 방법
CN113333234B (zh) * 2020-03-03 2026-01-30 伊利诺斯工具制品有限公司 分配装置

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6030018B2 (ja) 1977-11-14 1985-07-13 三菱電機株式会社 露光装置
DE3447488A1 (de) * 1984-10-19 1986-05-07 Canon K.K., Tokio/Tokyo Projektionseinrichtung
US4801352A (en) * 1986-12-30 1989-01-31 Image Micro Systems, Inc. Flowing gas seal enclosure for processing workpiece surface with controlled gas environment and intense laser irradiation
EP0694817B1 (de) * 1988-09-02 2000-03-22 Canon Kabushiki Kaisha Belichtungsapparat
EP0357423B1 (de) * 1988-09-02 1995-03-15 Canon Kabushiki Kaisha Belichtungseinrichtung
JP2731950B2 (ja) * 1989-07-13 1998-03-25 キヤノン株式会社 露光方法
US5231291A (en) * 1989-08-01 1993-07-27 Canon Kabushiki Kaisha Wafer table and exposure apparatus with the same
DE69033002T2 (de) * 1989-10-02 1999-09-02 Canon K.K. Belichtungsvorrichtung
JP3306961B2 (ja) 1993-03-08 2002-07-24 株式会社ニコン 露光装置及び露光方法
US5559584A (en) * 1993-03-08 1996-09-24 Nikon Corporation Exposure apparatus
JP3459742B2 (ja) * 1996-01-17 2003-10-27 キヤノン株式会社 露光装置及びそれを用いたデバイスの製造方法
US6317479B1 (en) * 1996-05-17 2001-11-13 Canon Kabushiki Kaisha X-ray mask, and exposure method and apparatus using the same
JPH10214782A (ja) 1996-11-29 1998-08-11 Nikon Corp 露光装置
WO1999010917A1 (en) 1997-08-26 1999-03-04 Nikon Corporation Aligner, exposure method, method of pressure adjustment of projection optical system, and method of assembling aligner
JP3563935B2 (ja) 1997-09-30 2004-09-08 キヤノン株式会社 半導体製造用露光装置およびこれを用いた半導体デバイス製造プロセス
US5997963A (en) * 1998-05-05 1999-12-07 Ultratech Stepper, Inc. Microchamber
EP0957402B1 (de) 1998-05-15 2006-09-20 ASML Netherlands B.V. Lithographische Vorrichtung
JP2000200745A (ja) 1999-01-07 2000-07-18 Nikon Corp 投影露光装置
JP2000357643A (ja) * 1999-06-14 2000-12-26 Canon Inc 露光方法及びそれを用いた露光装置
EP1229573A4 (de) 1999-07-16 2006-11-08 Nikon Corp Belichtungsverfahren und -system
JP2001118783A (ja) 1999-10-21 2001-04-27 Nikon Corp 露光方法及び装置、並びにデバイス製造方法
TW480372B (en) * 1999-11-05 2002-03-21 Asm Lithography Bv Lithographic projection apparatus, method of manufacturing a device using the apparatus, and device manufactured according to the method
TW563002B (en) 1999-11-05 2003-11-21 Asml Netherlands Bv Lithographic projection apparatus, method of manufacturing a device using a lithographic projection apparatus, and device manufactured by the method
EP1098225A3 (de) 1999-11-05 2002-04-10 Asm Lithography B.V. Lithographischer Projektionsapparat mit Spülgassystem und Verfahren unter Verwendung desselben
US6933513B2 (en) * 1999-11-05 2005-08-23 Asml Netherlands B.V. Gas flushing system for use in lithographic apparatus
EP1098226A3 (de) 1999-11-05 2002-01-09 Asm Lithography B.V. Lithographischer Apparat mit Spülgassystem
JP2001250759A (ja) 2000-03-06 2001-09-14 Canon Inc 露光装置
JP2001284224A (ja) 2000-03-30 2001-10-12 Nikon Corp 露光装置及び露光方法
JP3869999B2 (ja) * 2000-03-30 2007-01-17 キヤノン株式会社 露光装置および半導体デバイス製造方法
JP3531914B2 (ja) 2000-04-14 2004-05-31 キヤノン株式会社 光学装置、露光装置及びデバイス製造方法
WO2001084241A1 (en) 2000-05-03 2001-11-08 Silicon Valley Group, Inc. Non-contact seal using purge gas
JP2001358056A (ja) * 2000-06-15 2001-12-26 Canon Inc 露光装置
JP4560182B2 (ja) * 2000-07-06 2010-10-13 キヤノン株式会社 減圧処理装置、半導体製造装置およびデバイス製造方法
JP2002198277A (ja) * 2000-12-22 2002-07-12 Canon Inc 補正装置、露光装置、デバイス製造方法及びデバイス
US6954255B2 (en) * 2001-06-15 2005-10-11 Canon Kabushiki Kaisha Exposure apparatus
JP2002373852A (ja) * 2001-06-15 2002-12-26 Canon Inc 露光装置

Also Published As

Publication number Publication date
US7738076B2 (en) 2010-06-15
EP1326139A2 (de) 2003-07-09
US6934003B2 (en) 2005-08-23
EP1326139A3 (de) 2004-10-13
US20050213063A1 (en) 2005-09-29
US20060274292A1 (en) 2006-12-07
EP1326139B1 (de) 2010-03-31
DE60331874D1 (de) 2010-05-12
US20030169407A1 (en) 2003-09-11
US7123343B2 (en) 2006-10-17

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