ATE463839T1 - Planar-oxidierungsverfahren zur herstellung eines lokalisierten vergrabenen isolators - Google Patents
Planar-oxidierungsverfahren zur herstellung eines lokalisierten vergrabenen isolatorsInfo
- Publication number
- ATE463839T1 ATE463839T1 AT06709234T AT06709234T ATE463839T1 AT E463839 T1 ATE463839 T1 AT E463839T1 AT 06709234 T AT06709234 T AT 06709234T AT 06709234 T AT06709234 T AT 06709234T AT E463839 T1 ATE463839 T1 AT E463839T1
- Authority
- AT
- Austria
- Prior art keywords
- producing
- planar
- buried insulator
- oxidization process
- layer
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6302—Non-deposition formation processes
- H10P14/6322—Formation by thermal treatments
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6302—Non-deposition formation processes
- H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
- H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/69—Inorganic materials
- H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
- H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
- H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
- H10P14/69391—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing aluminium, e.g. Al2O3
Landscapes
- Semiconductor Lasers (AREA)
- Formation Of Insulating Films (AREA)
- Materials For Medical Uses (AREA)
- Element Separation (AREA)
- Preparation Of Compounds By Using Micro-Organisms (AREA)
- Medicines Containing Material From Animals Or Micro-Organisms (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0501201A FR2881876B1 (fr) | 2005-02-07 | 2005-02-07 | Procede d'oxydation planaire pour realiser un isolant enterre localise |
| PCT/FR2006/000242 WO2006082322A1 (fr) | 2005-02-07 | 2006-02-02 | Procede d’oxydation planaire pour realiser un isolant enterre localise |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE463839T1 true ATE463839T1 (de) | 2010-04-15 |
Family
ID=34954516
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT06709234T ATE463839T1 (de) | 2005-02-07 | 2006-02-02 | Planar-oxidierungsverfahren zur herstellung eines lokalisierten vergrabenen isolators |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7932160B2 (de) |
| EP (1) | EP1856778B1 (de) |
| JP (1) | JP5101301B2 (de) |
| AT (1) | ATE463839T1 (de) |
| DE (1) | DE602006013429D1 (de) |
| FR (1) | FR2881876B1 (de) |
| WO (1) | WO2006082322A1 (de) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4347369B2 (ja) * | 2007-07-31 | 2009-10-21 | キヤノン株式会社 | 面発光レーザの製造方法 |
| JP4350774B2 (ja) | 2007-07-31 | 2009-10-21 | キヤノン株式会社 | 面発光レーザ |
| WO2009057764A1 (ja) * | 2007-10-31 | 2009-05-07 | Mitsubishi Chemical Corporation | エッチング方法およびそれを用いた光／電子デバイスの製造方法 |
| US9548355B1 (en) | 2015-06-24 | 2017-01-17 | International Business Machines Corporation | Compound finFET device including oxidized III-V fin isolator |
| US10262856B2 (en) * | 2016-12-16 | 2019-04-16 | The United States Of America, As Represented By The Secretary Of The Navy | Selective oxidation of transition metal nitride layers within compound semiconductor device structures |
| US20190341452A1 (en) | 2018-05-04 | 2019-11-07 | International Business Machines Corporation | Iii-v-segmented finfet free of wafer bonding |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02226780A (ja) * | 1989-02-28 | 1990-09-10 | Mitsubishi Electric Corp | 半導体レーザの製造方法 |
| JPH04354331A (ja) * | 1991-05-31 | 1992-12-08 | Sony Corp | ドライエッチング方法 |
| US5978408A (en) * | 1997-02-07 | 1999-11-02 | Xerox Corporation | Highly compact vertical cavity surface emitting lasers |
| JP2917971B2 (ja) * | 1997-06-11 | 1999-07-12 | 日本電気株式会社 | 面発光レーザ |
| US5896408A (en) * | 1997-08-15 | 1999-04-20 | Hewlett-Packard Company | Near planar native-oxide VCSEL devices and arrays using converging oxide ringlets |
| JP3745096B2 (ja) * | 1997-10-07 | 2006-02-15 | 松下電器産業株式会社 | 面発光半導体レーザおよびその製造方法 |
| JPH11145555A (ja) * | 1997-11-12 | 1999-05-28 | Oki Electric Ind Co Ltd | 面発光レーザ用ミラー構造およびその形成方法 |
| JP2000124549A (ja) * | 1998-10-15 | 2000-04-28 | Furukawa Electric Co Ltd:The | 半導体レーザ素子 |
| US6545335B1 (en) * | 1999-12-27 | 2003-04-08 | Xerox Corporation | Structure and method for electrical isolation of optoelectronic integrated circuits |
| US6674777B1 (en) * | 2000-08-31 | 2004-01-06 | Honeywell International Inc. | Protective side wall passivation for VCSEL chips |
| US20020182823A1 (en) * | 2001-04-18 | 2002-12-05 | Noriyuki Yokouchi | Wafer oxidation reactor and a method for forming a semiconductor device |
| DE10140791A1 (de) * | 2001-08-20 | 2003-03-13 | Mattson Thermal Products Gmbh | Verfahren zur thermischen Behandlung eines mehrere Schichten aufweisenden Substrats |
| US6891202B2 (en) * | 2001-12-14 | 2005-05-10 | Infinera Corporation | Oxygen-doped Al-containing current blocking layers in active semiconductor devices |
| JP2003168845A (ja) * | 2001-12-03 | 2003-06-13 | Hitachi Ltd | 半導体レーザ素子及びこれを用いた光モジュール、及び光システム |
| JP4442103B2 (ja) * | 2003-03-24 | 2010-03-31 | ソニー株式会社 | 面発光レーザ素子及びその製造方法 |
| US7054345B2 (en) * | 2003-06-27 | 2006-05-30 | Finisar Corporation | Enhanced lateral oxidation |
-
2005
- 2005-02-07 FR FR0501201A patent/FR2881876B1/fr not_active Expired - Fee Related
-
2006
- 2006-02-02 AT AT06709234T patent/ATE463839T1/de not_active IP Right Cessation
- 2006-02-02 EP EP06709234A patent/EP1856778B1/de not_active Expired - Lifetime
- 2006-02-02 JP JP2007553657A patent/JP5101301B2/ja not_active Expired - Fee Related
- 2006-02-02 WO PCT/FR2006/000242 patent/WO2006082322A1/fr not_active Ceased
- 2006-02-02 DE DE602006013429T patent/DE602006013429D1/de not_active Expired - Lifetime
- 2006-02-02 US US11/883,706 patent/US7932160B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US20080164560A1 (en) | 2008-07-10 |
| JP5101301B2 (ja) | 2012-12-19 |
| WO2006082322A1 (fr) | 2006-08-10 |
| EP1856778A1 (de) | 2007-11-21 |
| JP2008530774A (ja) | 2008-08-07 |
| FR2881876B1 (fr) | 2007-05-25 |
| DE602006013429D1 (de) | 2010-05-20 |
| FR2881876A1 (fr) | 2006-08-11 |
| US7932160B2 (en) | 2011-04-26 |
| EP1856778B1 (de) | 2010-04-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW200717653A (en) | A method of forming a silicon oxynitride film with tensile stress | |
| ATE343157T1 (de) | Methode zur bestimmung eines maskensatzes zur herstellung eines integrierten schaltkreises | |
| TW200701370A (en) | Super anneal for process induced strain modulation | |
| ATE512465T1 (de) | Verspannte halbleiter-einrichtungsstrukturen mit granularem halbleitermaterial | |
| TW200802628A (en) | Semiconductor structure and fabrications thereof | |
| JP2010534935A5 (de) | ||
| EP1211728A3 (de) | Halbleitervorrichtung und Verfahren zu deren Herstellung | |
| ATE541320T1 (de) | Beleuchter und verfahren zur herstellung eines derartigen beleuchters | |
| WO2008073926A3 (en) | Formation of epitaxial layers containing silicon | |
| TW200615715A (en) | Semiconductor processing using energized hydrogen gas and in combination with wet cleaning | |
| EP1705698A3 (de) | Verfahren zur Herstellung von verspanntem Silizium auf einem SOI-Substrat | |
| ATE548761T1 (de) | Verfahren zur selektiven dotierung von silizium | |
| SG142223A1 (en) | Methods for characterizing defects on silicon surfaces, etching composition for silicon surfaces and process of treating silicon surfaces with the etching composition | |
| ATE463839T1 (de) | Planar-oxidierungsverfahren zur herstellung eines lokalisierten vergrabenen isolators | |
| TW200623210A (en) | Recess gate and method for fabricating semiconductor device with the same | |
| DE60232855D1 (de) | Verfahren zur Herstellung von Halbleiteranordnungen mit Graben-Gate | |
| TW200630496A (en) | Method of producing film and film | |
| ATE418793T1 (de) | Halbleiterbauelement und verfahren zur herstellung eines solchen bauelements | |
| ATE555505T1 (de) | Verfahren zur herstellung eines halbleitersubstrats | |
| JP2002026389A5 (de) | ||
| ATE478063T1 (de) | Verfahren zur herstellung von alkylencarbonat | |
| DE602008006579D1 (de) | Herstellungsverfahren eines Leistungshalbleiterbauelements | |
| AR047403A1 (es) | Un substrato tratado poroso, un articulo absorbente para la higine personal tal como un panal que comprende dicho substrato y un metodo para tratar dicho subtrato. | |
| TW200514253A (en) | Semiconductor component and method of manufacturing same | |
| EP1176634A3 (de) | Verfahren zum anisotropen Trockenätzen von organischer Antireflexionsschichten |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |