ATE418793T1 - Halbleiterbauelement und verfahren zur herstellung eines solchen bauelements - Google Patents

Halbleiterbauelement und verfahren zur herstellung eines solchen bauelements

Info

Publication number
ATE418793T1
ATE418793T1 AT04710457T AT04710457T ATE418793T1 AT E418793 T1 ATE418793 T1 AT E418793T1 AT 04710457 T AT04710457 T AT 04710457T AT 04710457 T AT04710457 T AT 04710457T AT E418793 T1 ATE418793 T1 AT E418793T1
Authority
AT
Austria
Prior art keywords
semiconductor region
conductivity type
component
semiconductor
regions
Prior art date
Application number
AT04710457T
Other languages
English (en)
Inventor
Dalen Rob Van
Gerrit Koops
Original Assignee
Nxp Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nxp Bv filed Critical Nxp Bv
Application granted granted Critical
Publication of ATE418793T1 publication Critical patent/ATE418793T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/20—Breakdown diodes, e.g. avalanche diodes
    • H10D8/25—Zener diodes 

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Transition And Organic Metals Composition Catalysts For Addition Polymerization (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
AT04710457T 2003-02-18 2004-02-12 Halbleiterbauelement und verfahren zur herstellung eines solchen bauelements ATE418793T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP03100367 2003-02-18

Publications (1)

Publication Number Publication Date
ATE418793T1 true ATE418793T1 (de) 2009-01-15

Family

ID=32892944

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04710457T ATE418793T1 (de) 2003-02-18 2004-02-12 Halbleiterbauelement und verfahren zur herstellung eines solchen bauelements

Country Status (9)

Country Link
US (2) US7482669B2 (de)
EP (1) EP1597772B1 (de)
JP (1) JP2006518107A (de)
KR (1) KR20050095787A (de)
CN (1) CN100477284C (de)
AT (1) ATE418793T1 (de)
DE (1) DE602004018614D1 (de)
TW (1) TW200501430A (de)
WO (1) WO2004075303A1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006518107A (ja) * 2003-02-18 2006-08-03 コーニンクレッカ　フィリップス　エレクトロニクス　エヌ　ヴィ 半導体装置及びそのような装置の製造方法
EP1866970A1 (de) * 2005-03-22 2007-12-19 University College Cork-National University of Ireland, Cork Diodenstruktur
US20070077738A1 (en) * 2005-10-03 2007-04-05 Aram Tanielian Fabrication of small scale matched bi-polar TVS devices having reduced parasitic losses
CN102117839B (zh) * 2010-01-05 2013-07-24 比亚迪股份有限公司 一种包含pn结的半导体电子器件
US9105682B2 (en) * 2011-02-28 2015-08-11 Infineon Technologies Austria Ag Semiconductor component with improved dynamic behavior
US8987858B2 (en) * 2013-03-18 2015-03-24 General Electric Company Method and system for transient voltage suppression
CN104022147B (zh) * 2014-06-09 2017-05-24 苏州市职业大学 一种瞬态电压抑制半导体器件
US10157904B2 (en) * 2017-03-31 2018-12-18 Alpha And Omega Semiconductor (Cayman) Ltd. High surge bi-directional transient voltage suppressor
DE102018113573B4 (de) 2018-06-07 2022-11-03 Semikron Elektronik Gmbh & Co. Kg Patentabteilung Diode mit einem Halbleiterkörper
GB2586599A (en) * 2019-08-27 2021-03-03 Mqsemi Ag Electrically shorted PN junctions and functional semiconductor designs for the same
CN118610273B (zh) * 2024-08-07 2024-10-18 芯联先锋集成电路制造(绍兴)有限公司 稳压二极管及其制备方法、半导体集成结构

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US4003072A (en) * 1972-04-20 1977-01-11 Sony Corporation Semiconductor device with high voltage breakdown resistance
JPS542077A (en) * 1977-06-08 1979-01-09 Hitachi Ltd Semiconductor switching element
US4356503A (en) * 1978-06-14 1982-10-26 General Electric Company Latching transistor
JPS6011815B2 (ja) * 1979-07-09 1985-03-28 三菱電機株式会社 サイリスタ
JPS5691478A (en) * 1979-12-26 1981-07-24 Hitachi Ltd Manufacture of punch-through type diode
JPS5773956A (en) * 1980-10-27 1982-05-08 Hitachi Ltd Glass coated semiconductor device
US4782379A (en) * 1981-11-23 1988-11-01 General Electric Company Semiconductor device having rapid removal of majority carriers from an active base region thereof at device turn-off and method of fabricating this device
JPS60142559A (ja) * 1983-12-29 1985-07-27 Fujitsu Ltd プログラマブル・リ−ド・オンリ・メモリ
JPS6384066A (ja) * 1986-09-26 1988-04-14 Semiconductor Res Found 集積化光トリガ・光クエンチ静電誘導サイリスタ及びその製造方法
EP0270975B1 (de) * 1986-12-01 1994-11-09 Kabushiki Kaisha Toshiba Halbleiter-Schaltanordnung mit einer Anodenkurzschlussstruktur
US4821095A (en) * 1987-03-12 1989-04-11 General Electric Company Insulated gate semiconductor device with extra short grid and method of fabrication
GB8713440D0 (en) * 1987-06-09 1987-07-15 Texas Instruments Ltd Semiconductor device
US4967256A (en) * 1988-07-08 1990-10-30 Texas Instruments Incorporated Overvoltage protector
WO1991003842A1 (fr) * 1989-08-31 1991-03-21 Nippondenso Co., Ltd. Transistor bipolaire a grille isolee
JP3321185B2 (ja) * 1990-09-28 2002-09-03 株式会社東芝 高耐圧半導体装置
JP3081739B2 (ja) * 1992-10-20 2000-08-28 三菱電機株式会社 絶縁ゲート型半導体装置及びその製造方法
DE69315813T2 (de) * 1992-12-28 1998-06-10 Koninkl Philips Electronics Nv Kaskodenschaltungsstruktur mit bipolaren Epitoxial-Transistoren und niedrig gelegenem Basisanschluss
US5479031A (en) * 1993-09-10 1995-12-26 Teccor Electronics, Inc. Four layer overvoltage protection device having buried regions aligned with shorting dots to increase the accuracy of overshoot voltage value
JP3240827B2 (ja) * 1994-05-19 2001-12-25 日産自動車株式会社 ダイオード
US5969400A (en) * 1995-03-15 1999-10-19 Kabushiki Kaisha Toshiba High withstand voltage semiconductor device
US6081009A (en) * 1997-11-10 2000-06-27 Intersil Corporation High voltage mosfet structure
DE60030059T2 (de) * 1999-04-08 2007-03-29 Koninklijke Philips Electronics N.V. Durchbruchsdiode und verfahren zur herstellung
JP2003523634A (ja) * 2000-02-15 2003-08-05 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 半導体装置およびその製造方法
JP3636345B2 (ja) * 2000-03-17 2005-04-06 富士電機デバイステクノロジー株式会社 半導体素子および半導体素子の製造方法
US6448589B1 (en) * 2000-05-19 2002-09-10 Teccor Electronics, L.P. Single side contacts for a semiconductor device
JP2006518107A (ja) * 2003-02-18 2006-08-03 コーニンクレッカ　フィリップス　エレクトロニクス　エヌ　ヴィ 半導体装置及びそのような装置の製造方法
US6862162B2 (en) * 2003-04-23 2005-03-01 Teccor Electronics, Lp Thyristor circuit providing overcurrent protection to a low impedance load

Also Published As

Publication number Publication date
US7482669B2 (en) 2009-01-27
CN100477284C (zh) 2009-04-08
US20060145191A1 (en) 2006-07-06
US7728404B2 (en) 2010-06-01
KR20050095787A (ko) 2005-09-30
US20090026500A1 (en) 2009-01-29
TW200501430A (en) 2005-01-01
JP2006518107A (ja) 2006-08-03
CN1751396A (zh) 2006-03-22
WO2004075303A1 (en) 2004-09-02
EP1597772A1 (de) 2005-11-23
DE602004018614D1 (de) 2009-02-05
EP1597772B1 (de) 2008-12-24

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