ATE555505T1 - Verfahren zur herstellung eines halbleitersubstrats - Google Patents
Verfahren zur herstellung eines halbleitersubstratsInfo
- Publication number
- ATE555505T1 ATE555505T1 AT09715749T AT09715749T ATE555505T1 AT E555505 T1 ATE555505 T1 AT E555505T1 AT 09715749 T AT09715749 T AT 09715749T AT 09715749 T AT09715749 T AT 09715749T AT E555505 T1 ATE555505 T1 AT E555505T1
- Authority
- AT
- Austria
- Prior art keywords
- semiconductor layer
- modified
- semiconductor substrate
- producing
- providing
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
Landscapes
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP08290176A EP2096683B1 (de) | 2008-02-26 | 2008-02-26 | Verfahren zur Herstellung eines Halbleitersubstrats |
| EP09290097 | 2009-02-11 | ||
| PCT/EP2009/001382 WO2009106330A1 (en) | 2008-02-26 | 2009-02-26 | Method for fabricating a semiconductor substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE555505T1 true ATE555505T1 (de) | 2012-05-15 |
Family
ID=40707751
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT09715749T ATE555505T1 (de) | 2008-02-26 | 2009-02-26 | Verfahren zur herstellung eines halbleitersubstrats |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8575010B2 (de) |
| EP (1) | EP2255395B1 (de) |
| JP (1) | JP4810649B2 (de) |
| KR (1) | KR101595307B1 (de) |
| CN (2) | CN101904017A (de) |
| AT (1) | ATE555505T1 (de) |
| WO (1) | WO2009106330A1 (de) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2957190B1 (fr) * | 2010-03-02 | 2012-04-27 | Soitec Silicon On Insulator | Procede de realisation d'une structure multicouche avec detourage par effets thermomecaniques. |
| US8455292B2 (en) * | 2011-09-09 | 2013-06-04 | International Business Machines Corporation | Deposition of germanium film |
| WO2014020387A1 (en) | 2012-07-31 | 2014-02-06 | Soitec | Methods of forming semiconductor structures including mems devices and integrated circuits on opposing sides of substrates, and related structures and devices |
| FR2995447B1 (fr) | 2012-09-07 | 2014-09-05 | Soitec Silicon On Insulator | Procede de separation d'au moins deux substrats selon une interface choisie |
| KR20220141707A (ko) | 2021-04-13 | 2022-10-20 | 김지현 | 물류창고용 렉 가이드 장치 |
| JP7759028B2 (ja) * | 2022-02-15 | 2025-10-23 | 日産自動車株式会社 | 冷却装置 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5137837A (en) * | 1990-08-20 | 1992-08-11 | Hughes Aircraft Company | Radiation-hard, high-voltage semiconductive device structure fabricated on SOI substrate |
| US5336879A (en) * | 1993-05-28 | 1994-08-09 | David Sarnoff Research Center, Inc. | Pixel array having image forming pixel elements integral with peripheral circuit elements |
| US6326280B1 (en) * | 1995-02-02 | 2001-12-04 | Sony Corporation | Thin film semiconductor and method for making thin film semiconductor |
| FR2845523B1 (fr) * | 2002-10-07 | 2005-10-28 | Procede pour realiser un substrat par transfert d'une plaquette donneuse comportant des especes etrangeres, et plaquette donneuse associee | |
| EP1570528B1 (de) * | 2002-12-09 | 2019-05-29 | Quantum Semiconductor, LLC | Cmos-bildsensor |
| FR2855910B1 (fr) * | 2003-06-06 | 2005-07-15 | Commissariat Energie Atomique | Procede d'obtention d'une couche tres mince par amincissement par auto-portage provoque |
| US7180098B2 (en) * | 2004-04-05 | 2007-02-20 | Legerity, Inc. | Optical isolator device, and method of making same |
| JP2006134915A (ja) * | 2004-11-02 | 2006-05-25 | Sony Corp | 半導体基板、固体撮像装置および固体撮像装置の製造方法 |
| US7723215B2 (en) * | 2005-02-11 | 2010-05-25 | Sarnoff Corporation | Dark current reduction in back-illuminated imaging sensors and method of fabricating same |
| US7238583B2 (en) * | 2005-02-11 | 2007-07-03 | Sarnoff Corporation | Back-illuminated imaging device and method of fabricating same |
| JP4618064B2 (ja) * | 2005-09-12 | 2011-01-26 | ソニー株式会社 | 半導体装置およびその製造方法 |
| US7777229B2 (en) * | 2006-09-11 | 2010-08-17 | Sarnoff Corporation | Method and apparatus for reducing smear in back-illuminated imaging sensors |
| US7541256B2 (en) * | 2007-03-28 | 2009-06-02 | Sarnoff Corporation | Method of fabricating back-illuminated imaging sensors using a bump bonding technique |
| US7985612B2 (en) * | 2008-02-19 | 2011-07-26 | Sri International | Method and device for reducing crosstalk in back illuminated imagers |
| JP2011522421A (ja) * | 2008-05-28 | 2011-07-28 | サーノフ コーポレーション | 極薄シリコン・オン・インシュレータ基板を使用した背面照射型撮像装置 |
| WO2009146264A1 (en) * | 2008-05-30 | 2009-12-03 | Sarnoff Corporation | Method for electronically pinning a back surface of a back-illuminated imager fabricated on a utsoi wafer |
| WO2009146256A1 (en) * | 2008-05-30 | 2009-12-03 | Sarnoff Corporation | High-efficiency thinned imager with reduced boron updiffusion |
-
2009
- 2009-02-26 US US12/918,935 patent/US8575010B2/en active Active
- 2009-02-26 KR KR1020107015399A patent/KR101595307B1/ko active Active
- 2009-02-26 EP EP09715749A patent/EP2255395B1/de active Active
- 2009-02-26 CN CN2009801014367A patent/CN101904017A/zh active Pending
- 2009-02-26 JP JP2010547127A patent/JP4810649B2/ja active Active
- 2009-02-26 CN CN201210068928.4A patent/CN102623470B/zh active Active
- 2009-02-26 AT AT09715749T patent/ATE555505T1/de active
- 2009-02-26 WO PCT/EP2009/001382 patent/WO2009106330A1/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| JP4810649B2 (ja) | 2011-11-09 |
| JP2011513947A (ja) | 2011-04-28 |
| CN101904017A (zh) | 2010-12-01 |
| CN102623470B (zh) | 2015-11-18 |
| EP2255395B1 (de) | 2012-04-25 |
| CN102623470A (zh) | 2012-08-01 |
| WO2009106330A1 (en) | 2009-09-03 |
| EP2255395A1 (de) | 2010-12-01 |
| KR101595307B1 (ko) | 2016-02-26 |
| KR20100134551A (ko) | 2010-12-23 |
| US20110024868A1 (en) | 2011-02-03 |
| US8575010B2 (en) | 2013-11-05 |
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