ATE468611T1 - Einzelelektrontransistoren und verfahren zur herstellung - Google Patents

Einzelelektrontransistoren und verfahren zur herstellung

Info

Publication number
ATE468611T1
ATE468611T1 AT02756451T AT02756451T ATE468611T1 AT E468611 T1 ATE468611 T1 AT E468611T1 AT 02756451 T AT02756451 T AT 02756451T AT 02756451 T AT02756451 T AT 02756451T AT E468611 T1 ATE468611 T1 AT E468611T1
Authority
AT
Austria
Prior art keywords
insulating layer
electrode
nanoparticle
electrodes
substrate
Prior art date
Application number
AT02756451T
Other languages
English (en)
Inventor
Louis Brousseau
Original Assignee
Univ North Carolina State
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ North Carolina State filed Critical Univ North Carolina State
Application granted granted Critical
Publication of ATE468611T1 publication Critical patent/ATE468611T1/de

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4146—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS involving nanosized elements, e.g. nanotubes, nanowires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/402—Single electron transistors; Coulomb blockade transistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/936—Specified use of nanostructure for electronic or optoelectronic application in a transistor or 3-terminal device
    • Y10S977/937—Single electron transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • General Health & Medical Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
AT02756451T 2001-07-13 2002-07-12 Einzelelektrontransistoren und verfahren zur herstellung ATE468611T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/905,319 US6483125B1 (en) 2001-07-13 2001-07-13 Single electron transistors in which the thickness of an insulating layer defines spacing between electrodes
PCT/US2002/022137 WO2003007384A2 (en) 2001-07-13 2002-07-12 Single-electron transistors and fabrication methods

Publications (1)

Publication Number Publication Date
ATE468611T1 true ATE468611T1 (de) 2010-06-15

Family

ID=25420626

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02756451T ATE468611T1 (de) 2001-07-13 2002-07-12 Einzelelektrontransistoren und verfahren zur herstellung

Country Status (8)

Country Link
US (2) US6483125B1 (de)
EP (1) EP1407492B1 (de)
JP (1) JP4814487B2 (de)
AT (1) ATE468611T1 (de)
AU (1) AU2002322459A1 (de)
DE (1) DE60236436D1 (de)
TW (1) TW557546B (de)
WO (1) WO2003007384A2 (de)

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KR102685937B1 (ko) 2017-01-19 2024-07-17 로스웰 엠이 아이엔씨. 2차원 레이어 재료를 포함하는 솔리드 스테이트 시퀀싱 디바이스들
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CN110651182B (zh) 2017-05-09 2022-12-30 罗斯威尔生命技术公司 用于分子传感器的结合探针电路
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Also Published As

Publication number Publication date
AU2002322459A1 (en) 2003-01-29
WO2003007384A2 (en) 2003-01-23
EP1407492B1 (de) 2010-05-19
DE60236436D1 (de) 2010-07-01
JP4814487B2 (ja) 2011-11-16
JP2005526371A (ja) 2005-09-02
US6483125B1 (en) 2002-11-19
WO2003007384A3 (en) 2003-05-08
US20030025133A1 (en) 2003-02-06
US6784082B2 (en) 2004-08-31
TW557546B (en) 2003-10-11
EP1407492A2 (de) 2004-04-14

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