ATE469365T1 - Verfahren zur herstellung eines schlitzwellenleiters - Google Patents

Verfahren zur herstellung eines schlitzwellenleiters

Info

Publication number
ATE469365T1
ATE469365T1 AT07119452T AT07119452T ATE469365T1 AT E469365 T1 ATE469365 T1 AT E469365T1 AT 07119452 T AT07119452 T AT 07119452T AT 07119452 T AT07119452 T AT 07119452T AT E469365 T1 ATE469365 T1 AT E469365T1
Authority
AT
Austria
Prior art keywords
silicon
trenches
silicon oxide
layer
etch stop
Prior art date
Application number
AT07119452T
Other languages
English (en)
Inventor
Emmanuel Jordana
Jean-Marc Fedeli
Melhaoui Loubna El
Original Assignee
Commissariat Energie Atomique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat Energie Atomique filed Critical Commissariat Energie Atomique
Application granted granted Critical
Publication of ATE469365T1 publication Critical patent/ATE469365T1/de

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G02B6/1223—Basic optical elements, e.g. light-guiding paths high refractive index type, i.e. high-contrast waveguides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/107—Subwavelength-diameter waveguides, e.g. nanowires
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method
    • G02B6/131—Integrated optical circuits characterised by the manufacturing method by using epitaxial growth
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method
    • G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12035—Materials
    • G02B2006/12061—Silicon

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optical Integrated Circuits (AREA)
  • Variable-Direction Aerials And Aerial Arrays (AREA)
  • Platform Screen Doors And Railroad Systems (AREA)
  • Recrystallisation Techniques (AREA)
AT07119452T 2006-10-31 2007-10-29 Verfahren zur herstellung eines schlitzwellenleiters ATE469365T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0654669A FR2907916B1 (fr) 2006-10-31 2006-10-31 Nouvelle structure de guide a fente

Publications (1)

Publication Number Publication Date
ATE469365T1 true ATE469365T1 (de) 2010-06-15

Family

ID=37775562

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07119452T ATE469365T1 (de) 2006-10-31 2007-10-29 Verfahren zur herstellung eines schlitzwellenleiters

Country Status (5)

Country Link
US (1) US7972522B2 (de)
EP (1) EP1918744B1 (de)
AT (1) ATE469365T1 (de)
DE (1) DE602007006738D1 (de)
FR (1) FR2907916B1 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2968776B1 (fr) * 2010-12-13 2012-12-28 Commissariat Energie Atomique Procédé pour réaliser un guide optique a fente sur silicium
US9246230B2 (en) 2011-02-11 2016-01-26 AMI Research & Development, LLC High performance low profile antennas
US8824843B2 (en) 2011-02-11 2014-09-02 AMI Research & Development, LLC Leaky mode solar receiver using continuous wedge lens
US9806425B2 (en) 2011-02-11 2017-10-31 AMI Research & Development, LLC High performance low profile antennas
KR101618189B1 (ko) * 2011-09-22 2016-05-04 인텔 코포레이션 슬롯형 도파관 변조기 디바이스를 위한 슬롯형 y-커플링 도파관
US9281424B2 (en) 2012-01-24 2016-03-08 AMI Research & Development, LLC Wideband light energy waveguide and detector
US9557480B2 (en) 2013-11-06 2017-01-31 R.A. Miller Industries, Inc. Graphene coupled MIM rectifier especially for use in monolithic broadband infrared energy collector
FR3024781B1 (fr) 2014-08-11 2017-12-15 Commissariat Energie Atomique Procede de fabrication d'un guide optique
WO2018096038A1 (en) * 2016-11-23 2018-05-31 Rockley Photonics Limited Electro-optically active device
US10162200B1 (en) * 2017-06-19 2018-12-25 Taiwan Semiconductor Manufacturing Company Ltd. Electro-optic phase modulator and method of manufacturing the same
US11500157B1 (en) * 2019-03-22 2022-11-15 Ciena Corporation Silicon Selective Epitaxial Growth (SEG) applied to a Silicon on Insulator (SOI) wafer to provide a region of customized thickness
CN111522094B (zh) * 2020-05-06 2021-01-19 贵阳学院 一种box形氮化硅波导及其制备方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4473598A (en) * 1982-06-30 1984-09-25 International Business Machines Corporation Method of filling trenches with silicon and structures
US5888876A (en) * 1996-04-09 1999-03-30 Kabushiki Kaisha Toshiba Deep trench filling method using silicon film deposition and silicon migration
US5793913A (en) * 1996-07-10 1998-08-11 Northern Telecom Limited Method for the hybrid integration of discrete elements on a semiconductor substrate
US5841931A (en) 1996-11-26 1998-11-24 Massachusetts Institute Of Technology Methods of forming polycrystalline semiconductor waveguides for optoelectronic integrated circuits, and devices formed thereby
US6228691B1 (en) * 1999-06-30 2001-05-08 Intel Corp. Silicon-on-insulator devices and method for producing the same
US20030000918A1 (en) 2001-06-29 2003-01-02 Kheraj Nizar S. Method for fabricating a protective cap for an optical waveguide core of a planar lightwave circuit device
US20040077178A1 (en) 2002-10-17 2004-04-22 Applied Materials, Inc. Method for laterally etching a semiconductor structure
JP2005128419A (ja) * 2003-10-27 2005-05-19 Nec Corp 光導波路構造およびその作製方法
US7162133B2 (en) 2004-08-20 2007-01-09 Agency For Science Technology And Research Method to trim and smooth high index contrast waveguide structures
US7519257B2 (en) * 2004-11-24 2009-04-14 Cornell Research Foundation, Inc. Waveguide structure for guiding light in low-index material
EP1955383B1 (de) * 2005-11-10 2011-07-27 Cornell Research Foundation, Inc. Lichtemittierende schlitzwellenleiteranordnung

Also Published As

Publication number Publication date
FR2907916A1 (fr) 2008-05-02
DE602007006738D1 (de) 2010-07-08
US7972522B2 (en) 2011-07-05
EP1918744B1 (de) 2010-05-26
US20080099425A1 (en) 2008-05-01
EP1918744A1 (de) 2008-05-07
FR2907916B1 (fr) 2009-01-23

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Legal Events

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