ATE470953T1 - Herstellungsverfahren für einen transistor auf einem soi-substrat - Google Patents

Herstellungsverfahren für einen transistor auf einem soi-substrat

Info

Publication number
ATE470953T1
ATE470953T1 AT02764986T AT02764986T ATE470953T1 AT E470953 T1 ATE470953 T1 AT E470953T1 AT 02764986 T AT02764986 T AT 02764986T AT 02764986 T AT02764986 T AT 02764986T AT E470953 T1 ATE470953 T1 AT E470953T1
Authority
AT
Austria
Prior art keywords
layer
silicon
channel region
transistor
production process
Prior art date
Application number
AT02764986T
Other languages
English (en)
Inventor
Jean-Pierre Joly
Original Assignee
Commissariat Energie Atomique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat Energie Atomique filed Critical Commissariat Energie Atomique
Application granted granted Critical
Publication of ATE470953T1 publication Critical patent/ATE470953T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H10D30/0323—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon comprising monocrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6725—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device having supplementary regions or layers for improving the flatness of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01356—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being a Group IV material and not being silicon, e.g. Ge, SiGe or SiGeC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/025—Manufacture or treatment forming recessed gates, e.g. by using local oxidation
    • H10D64/027—Manufacture or treatment forming recessed gates, e.g. by using local oxidation by etching at gate locations

Landscapes

  • Thin Film Transistor (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Diaphragms For Electromechanical Transducers (AREA)
  • Element Separation (AREA)
  • Bipolar Transistors (AREA)
AT02764986T 2001-07-19 2002-07-16 Herstellungsverfahren für einen transistor auf einem soi-substrat ATE470953T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0109665A FR2827705B1 (fr) 2001-07-19 2001-07-19 Transistor et procede de fabrication d'un transistor sur un substrat sige/soi
PCT/FR2002/002523 WO2003009404A2 (fr) 2001-07-19 2002-07-16 Transistor et procede de fabrication d'un transistor sur un substrat sige/soi

Publications (1)

Publication Number Publication Date
ATE470953T1 true ATE470953T1 (de) 2010-06-15

Family

ID=8865707

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02764986T ATE470953T1 (de) 2001-07-19 2002-07-16 Herstellungsverfahren für einen transistor auf einem soi-substrat

Country Status (6)

Country Link
US (1) US7153747B2 (de)
EP (1) EP1407486B1 (de)
AT (1) ATE470953T1 (de)
DE (1) DE60236657D1 (de)
FR (1) FR2827705B1 (de)
WO (1) WO2003009404A2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10335103B4 (de) 2003-07-31 2009-02-12 Advanced Micro Devices, Inc., Sunnyvale Feldeffekttransistor mit einer dotierten Gateelektrode mit reduzierter Gateverarmung und Verfahren zur Herstellung des Transistors
JP2007500936A (ja) * 2003-07-31 2007-01-18 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド ゲートの枯渇を低減した注入ゲート電極を有する電界効果型トランジスタ、及び、このトランジスタを製造する方法
FR2874454B1 (fr) 2004-08-19 2006-11-24 Commissariat Energie Atomique Element en couches minces et procede de fabrication associe
US7713858B2 (en) * 2006-03-31 2010-05-11 Intel Corporation Carbon nanotube-solder composite structures for interconnects, process of making same, packages containing same, and systems containing same
FR3011119B1 (fr) * 2013-09-23 2017-09-29 Commissariat Energie Atomique Procede de realisation d'un transistor
FR3116151A1 (fr) * 2020-11-10 2022-05-13 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de formation d’une structure de piegeage d’un substrat utile

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0682837B2 (ja) * 1982-09-16 1994-10-19 財団法人半導体研究振興会 半導体集積回路
KR970009054B1 (ko) * 1993-12-29 1997-06-03 현대전자산업 주식회사 평면구조 모스 트랜지스터 및 그 제조방법
JPH0870144A (ja) * 1994-08-26 1996-03-12 Sumitomo Electric Ind Ltd 超電導部品の作製方法
US6051473A (en) * 1996-11-22 2000-04-18 Advanced Micro Devices, Inc. Fabrication of raised source-drain transistor devices
US5846862A (en) * 1997-05-20 1998-12-08 Advanced Micro Devices Semiconductor device having a vertical active region and method of manufacture thereof
US6054355A (en) * 1997-06-30 2000-04-25 Kabushiki Kaisha Toshiba Method of manufacturing a semiconductor device which includes forming a dummy gate
US6054335A (en) * 1997-12-12 2000-04-25 Xerox Corporation Fabrication of scanning III-V compound light emitters integrated with Si-based actuators
FR2774214B1 (fr) * 1998-01-28 2002-02-08 Commissariat Energie Atomique PROCEDE DE REALISATION D'UNE STRUCTURE DE TYPE SEMI-CONDUCTEUR SUR ISOLANT ET EN PARTICULIER SiCOI
US6278165B1 (en) * 1998-06-29 2001-08-21 Kabushiki Kaisha Toshiba MIS transistor having a large driving current and method for producing the same
US6495402B1 (en) * 2001-02-06 2002-12-17 Advanced Micro Devices, Inc. Semiconductor-on-insulator (SOI) device having source/drain silicon-germanium regions and method of manufacture

Also Published As

Publication number Publication date
DE60236657D1 (de) 2010-07-22
FR2827705A1 (fr) 2003-01-24
WO2003009404A2 (fr) 2003-01-30
EP1407486B1 (de) 2010-06-09
US20040180521A1 (en) 2004-09-16
WO2003009404A3 (fr) 2003-04-03
FR2827705B1 (fr) 2003-10-24
EP1407486A2 (de) 2004-04-14
US7153747B2 (en) 2006-12-26

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Legal Events

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