ATE475186T1 - Lesen einer nichtflüchtigen speicherzelle unter berücksichtigung des speicherstatus einer benachbarten speicherzelle - Google Patents
Lesen einer nichtflüchtigen speicherzelle unter berücksichtigung des speicherstatus einer benachbarten speicherzelleInfo
- Publication number
- ATE475186T1 ATE475186T1 AT07869872T AT07869872T ATE475186T1 AT E475186 T1 ATE475186 T1 AT E475186T1 AT 07869872 T AT07869872 T AT 07869872T AT 07869872 T AT07869872 T AT 07869872T AT E475186 T1 ATE475186 T1 AT E475186T1
- Authority
- AT
- Austria
- Prior art keywords
- memory cell
- adjacent
- considering
- reading
- coupling
- Prior art date
Links
- 230000008878 coupling Effects 0.000 abstract 2
- 238000010168 coupling process Methods 0.000 abstract 2
- 238000005859 coupling reaction Methods 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 230000001808 coupling effect Effects 0.000 abstract 1
- 230000005684 electric field Effects 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5642—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
- G11C16/3427—Circuits or methods to prevent or reduce disturbance of the state of a memory cell when neighbouring cells are read or written
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/52—Protection of memory contents; Detection of errors in memory contents
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Read Only Memory (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/618,569 US7495962B2 (en) | 2006-12-29 | 2006-12-29 | Alternating read mode |
| US11/618,578 US7440324B2 (en) | 2006-12-29 | 2006-12-29 | Apparatus with alternating read mode |
| PCT/US2007/088787 WO2008083137A1 (en) | 2006-12-29 | 2007-12-24 | Reading of a nonvolatile memory cell by taking account of the stored state of a neighboring memory cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE475186T1 true ATE475186T1 (de) | 2010-08-15 |
Family
ID=39358350
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT07869872T ATE475186T1 (de) | 2006-12-29 | 2007-12-24 | Lesen einer nichtflüchtigen speicherzelle unter berücksichtigung des speicherstatus einer benachbarten speicherzelle |
Country Status (8)
| Country | Link |
|---|---|
| EP (1) | EP2078303B1 (de) |
| JP (1) | JP5174829B2 (de) |
| KR (1) | KR101100359B1 (de) |
| CN (1) | CN101627443B (de) |
| AT (1) | ATE475186T1 (de) |
| DE (1) | DE602007007974D1 (de) |
| TW (1) | TWI397075B (de) |
| WO (1) | WO2008083137A1 (de) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7499319B2 (en) | 2006-03-03 | 2009-03-03 | Sandisk Corporation | Read operation for non-volatile storage with compensation for coupling |
| US7813181B2 (en) * | 2008-12-31 | 2010-10-12 | Sandisk Corporation | Non-volatile memory and method for sensing with pipelined corrections for neighboring perturbations |
| US8050092B2 (en) * | 2009-05-29 | 2011-11-01 | Seagate Technology Llc | NAND flash memory with integrated bit line capacitance |
| KR101678888B1 (ko) * | 2010-08-06 | 2016-12-07 | 삼성전자주식회사 | 비휘발성 메모리 장치의 데이터 판독 방법 |
| KR101810640B1 (ko) | 2010-11-26 | 2017-12-20 | 삼성전자주식회사 | 불휘발성 메모리 장치 및 메모리 시스템 그리고 그것의 읽기 방법 |
| KR102089532B1 (ko) | 2013-02-06 | 2020-03-16 | 삼성전자주식회사 | 메모리 컨트롤러, 메모리 시스템 및 메모리 시스템의 동작 방법 |
| KR102318561B1 (ko) | 2014-08-19 | 2021-11-01 | 삼성전자주식회사 | 스토리지 장치, 스토리지 장치의 동작 방법 |
| KR102294352B1 (ko) | 2015-04-20 | 2021-08-26 | 삼성전자주식회사 | 불휘발성 메모리 장치 및 그것의 프로그램 방법과 독출 방법 |
| JP6779838B2 (ja) * | 2017-06-28 | 2020-11-04 | キオクシア株式会社 | メモリシステムおよび制御方法 |
| CN107481758B (zh) * | 2017-08-09 | 2020-05-01 | 上海华虹宏力半导体制造有限公司 | 一种存储器的操作方法 |
| KR102531995B1 (ko) * | 2018-03-29 | 2023-05-15 | 에스케이하이닉스 주식회사 | 반도체 메모리 장치, 이를 포함하는 저장 장치 및 메모리 컨트롤러의 동작 방법 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1052646B1 (de) * | 1999-05-11 | 2004-07-14 | Fujitsu Limited | Nichtflüchtige Halbleiterspeicheranordnung, die eine Datenleseoperation während einer Datenschreib/lösch-Operation erlaubt |
| US6771536B2 (en) * | 2002-02-27 | 2004-08-03 | Sandisk Corporation | Operating techniques for reducing program and read disturbs of a non-volatile memory |
| US6781877B2 (en) * | 2002-09-06 | 2004-08-24 | Sandisk Corporation | Techniques for reducing effects of coupling between storage elements of adjacent rows of memory cells |
| US7196931B2 (en) * | 2002-09-24 | 2007-03-27 | Sandisk Corporation | Non-volatile memory and method with reduced source line bias errors |
| US7046568B2 (en) * | 2002-09-24 | 2006-05-16 | Sandisk Corporation | Memory sensing circuit and method for low voltage operation |
| JP3913704B2 (ja) | 2003-04-22 | 2007-05-09 | 株式会社東芝 | 不揮発性半導体記憶装置及びこれを用いた電子装置 |
| JP3884448B2 (ja) * | 2004-05-17 | 2007-02-21 | 株式会社東芝 | 半導体記憶装置 |
| US7372730B2 (en) | 2004-01-26 | 2008-05-13 | Sandisk Corporation | Method of reading NAND memory to compensate for coupling between storage elements |
| US7187585B2 (en) * | 2005-04-05 | 2007-03-06 | Sandisk Corporation | Read operation for non-volatile storage that includes compensation for coupling |
| US7196928B2 (en) * | 2005-04-05 | 2007-03-27 | Sandisk Corporation | Compensating for coupling during read operations of non-volatile memory |
| CN101395673B (zh) * | 2006-03-03 | 2011-09-21 | 桑迪士克股份有限公司 | 对浮动栅极耦合具有补偿的非易失性存储装置的读取操作 |
-
2007
- 2007-12-24 KR KR1020097016020A patent/KR101100359B1/ko active Active
- 2007-12-24 CN CN2007800508905A patent/CN101627443B/zh active Active
- 2007-12-24 DE DE602007007974T patent/DE602007007974D1/de active Active
- 2007-12-24 AT AT07869872T patent/ATE475186T1/de not_active IP Right Cessation
- 2007-12-24 WO PCT/US2007/088787 patent/WO2008083137A1/en not_active Ceased
- 2007-12-24 EP EP07869872A patent/EP2078303B1/de active Active
- 2007-12-24 JP JP2009544243A patent/JP5174829B2/ja not_active Expired - Fee Related
- 2007-12-26 TW TW096150404A patent/TWI397075B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| CN101627443A (zh) | 2010-01-13 |
| TW200849263A (en) | 2008-12-16 |
| KR20090117709A (ko) | 2009-11-12 |
| EP2078303B1 (de) | 2010-07-21 |
| JP5174829B2 (ja) | 2013-04-03 |
| WO2008083137A1 (en) | 2008-07-10 |
| DE602007007974D1 (de) | 2010-09-02 |
| KR101100359B1 (ko) | 2011-12-30 |
| TWI397075B (zh) | 2013-05-21 |
| CN101627443B (zh) | 2012-10-03 |
| EP2078303A1 (de) | 2009-07-15 |
| JP2010515202A (ja) | 2010-05-06 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |