ATE476740T1 - Löschen nichtflüchtiger speicher unter verwendung individueller überprüfung und zusätzlichen löschens von untergruppen von speicherzellen - Google Patents

Löschen nichtflüchtiger speicher unter verwendung individueller überprüfung und zusätzlichen löschens von untergruppen von speicherzellen

Info

Publication number
ATE476740T1
ATE476740T1 AT06739859T AT06739859T ATE476740T1 AT E476740 T1 ATE476740 T1 AT E476740T1 AT 06739859 T AT06739859 T AT 06739859T AT 06739859 T AT06739859 T AT 06739859T AT E476740 T1 ATE476740 T1 AT E476740T1
Authority
AT
Austria
Prior art keywords
subset
erased
elements
verified
erasing
Prior art date
Application number
AT06739859T
Other languages
English (en)
Inventor
Gerrit Hemink
Teruhiko Kamei
Original Assignee
Sandisk Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/296,055 external-priority patent/US7403424B2/en
Application filed by Sandisk Corp filed Critical Sandisk Corp
Application granted granted Critical
Publication of ATE476740T1 publication Critical patent/ATE476740T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/344—Arrangements for verifying correct erasure or for detecting overerased cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G11C11/5635—Erasing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells
    • G11C16/3409—Circuits or methods to recover overerased nonvolatile memory cells detected during erase verification, usually by means of a "soft" programming step
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/344—Arrangements for verifying correct erasure or for detecting overerased cells
    • G11C16/3445—Circuits or methods to verify correct erasure of nonvolatile memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/344—Arrangements for verifying correct erasure or for detecting overerased cells
    • G11C16/345—Circuits or methods to detect overerased nonvolatile memory cells, usually during erasure verification
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3468—Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3468—Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing
    • G11C16/3472—Circuits or methods to verify correct erasure of nonvolatile memory cells whilst erasing is in progress, e.g. by detecting onset or cessation of current flow in cells and using the detector output to terminate erasure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3468—Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing
    • G11C16/3477—Circuits or methods to prevent overerasing of nonvolatile memory cells, e.g. by detecting onset or cessation of current flow in cells and using the detector output to terminate erasing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/562—Multilevel memory programming aspects
    • G11C2211/5621—Multilevel programming verification
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
    • G11C2216/12—Reading and writing aspects of erasable programmable read-only memories
    • G11C2216/18—Flash erasure of all the cells in an array, sector or block simultaneously

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Storage Device Security (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
AT06739859T 2005-03-31 2006-03-29 Löschen nichtflüchtiger speicher unter verwendung individueller überprüfung und zusätzlichen löschens von untergruppen von speicherzellen ATE476740T1 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US66704305P 2005-03-31 2005-03-31
US11/296,055 US7403424B2 (en) 2005-03-31 2005-12-06 Erasing non-volatile memory using individual verification and additional erasing of subsets of memory cells
US11/296,028 US7400537B2 (en) 2005-03-31 2005-12-06 Systems for erasing non-volatile memory using individual verification and additional erasing of subsets of memory cells
PCT/US2006/011340 WO2006105120A1 (en) 2005-03-31 2006-03-29 Erasing non-volatile memory using individual verification and additional erasing of subsets of memory cells

Publications (1)

Publication Number Publication Date
ATE476740T1 true ATE476740T1 (de) 2010-08-15

Family

ID=36615715

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06739859T ATE476740T1 (de) 2005-03-31 2006-03-29 Löschen nichtflüchtiger speicher unter verwendung individueller überprüfung und zusätzlichen löschens von untergruppen von speicherzellen

Country Status (8)

Country Link
EP (1) EP1864293B1 (de)
JP (1) JP4796125B2 (de)
KR (1) KR100921014B1 (de)
CN (1) CN101213614B (de)
AT (1) ATE476740T1 (de)
DE (1) DE602006015930D1 (de)
TW (1) TWI306606B (de)
WO (1) WO2006105120A1 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4990978B2 (ja) * 2006-10-13 2012-08-01 サンディスク コーポレイション 不揮発性記憶素子における部分的な消去と消去の検証
US7499338B2 (en) * 2006-10-13 2009-03-03 Sandisk Corporation Partitioned soft programming in non-volatile memory
KR100908562B1 (ko) * 2007-11-29 2009-07-21 주식회사 하이닉스반도체 불휘발성 메모리 소자의 소거 방법
KR100954946B1 (ko) * 2008-05-20 2010-04-27 주식회사 하이닉스반도체 불휘발성 메모리 소자의 소거 방법
KR100953063B1 (ko) * 2008-05-23 2010-04-14 주식회사 하이닉스반도체 불휘발성 메모리 장치의 소거 방법
US7839690B2 (en) * 2008-12-11 2010-11-23 Sandisk Corporation Adaptive erase and soft programming for memory
CN102376367B (zh) * 2010-08-10 2015-05-27 旺宏电子股份有限公司 于一存储集成电路上进行擦除操作的方法与装置
JP5259666B2 (ja) * 2010-09-22 2013-08-07 株式会社東芝 不揮発性半導体記憶装置
KR101281706B1 (ko) * 2011-02-28 2013-07-03 에스케이하이닉스 주식회사 불휘발성 메모리 장치 및 그의 소거 동작 제어 방법
US8488382B1 (en) * 2011-12-21 2013-07-16 Sandisk Technologies Inc. Erase inhibit for 3D non-volatile memory
US8787094B2 (en) 2012-04-18 2014-07-22 Sandisk Technologies Inc. Soft erase operation for 3D non-volatile memory with selective inhibiting of passed bits
US9019775B2 (en) 2012-04-18 2015-04-28 Sandisk Technologies Inc. Erase operation for 3D non-volatile memory with controllable gate-induced drain leakage current
KR102218735B1 (ko) 2014-01-21 2021-02-23 삼성전자주식회사 불휘발성 메모리 장치를 포함하는 메모리 시스템 및 그것의 소거 방법
JP6088602B2 (ja) * 2015-08-12 2017-03-01 ウィンボンド エレクトロニクス コーポレーション 不揮発性半導体記憶装置
KR102384959B1 (ko) * 2015-10-30 2022-04-11 에스케이하이닉스 주식회사 저장 장치, 이를 포함하는 메모리 시스템 및 이의 동작 방법
KR102377469B1 (ko) * 2015-11-02 2022-03-23 삼성전자주식회사 불휘발성 메모리 장치, 불휘발성 메모리 장치를 포함하는 스토리지 장치 및 불휘발성 메모리 장치의 동작 방법
CN106326780B (zh) * 2016-08-18 2019-05-17 佛山中科芯蔚科技有限公司 一种物理芯片指纹生成方法及系统
KR102643658B1 (ko) * 2016-11-10 2024-03-07 에스케이하이닉스 주식회사 반도체 메모리 장치 및 그것의 동작 방법
CN107507645A (zh) * 2017-07-28 2017-12-22 东芯半导体有限公司 一种避免数据擦除出错的闪存装置
US10877687B2 (en) * 2018-06-29 2020-12-29 Micron Technology, Inc. Erasure of multiple blocks in memory devices
US10916310B2 (en) * 2019-05-10 2021-02-09 Macronix International Co., Ltd. Memory system, memory controller, and memory control method
US11037632B1 (en) * 2020-03-25 2021-06-15 Macronix International Co., Ltd. Multi-tier 3D memory and erase method thereof
CN113409872B (zh) * 2021-06-30 2024-03-12 芯天下技术股份有限公司 一种抑制闪存过擦除的方法、装置、电子设备及存储介质

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Publication number Priority date Publication date Assignee Title
JPH08306196A (ja) * 1995-04-28 1996-11-22 Toshiba Corp 不揮発性半導体記憶装置
JPH09320282A (ja) * 1996-05-27 1997-12-12 Sharp Corp 不揮発性半導体記憶装置の消去制御方法
JP2000236031A (ja) * 1999-02-16 2000-08-29 Toshiba Corp 不揮発性半導体記憶装置
US6381174B1 (en) * 2001-03-12 2002-04-30 Micron Technology, Inc. Non-volatile memory device with redundant columns
JP2003178590A (ja) * 2001-12-11 2003-06-27 Toshiba Corp 不揮発性半導体記憶装置
US6891752B1 (en) * 2002-07-31 2005-05-10 Advanced Micro Devices System and method for erase voltage control during multiple sector erase of a flash memory device
JP4005895B2 (ja) * 2002-09-30 2007-11-14 株式会社東芝 不揮発性半導体メモリ装置

Also Published As

Publication number Publication date
TWI306606B (en) 2009-02-21
CN101213614A (zh) 2008-07-02
EP1864293A1 (de) 2007-12-12
CN101213614B (zh) 2012-05-16
KR100921014B1 (ko) 2009-10-09
EP1864293B1 (de) 2010-08-04
KR20080007553A (ko) 2008-01-22
DE602006015930D1 (de) 2010-09-16
JP4796125B2 (ja) 2011-10-19
WO2006105120A1 (en) 2006-10-05
TW200703342A (en) 2007-01-16
JP2008536247A (ja) 2008-09-04

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