ATE469420T1 - System und verfahren zur verwendung eines on-chip-schreibcache eines nichtflüchtigen speichers - Google Patents

System und verfahren zur verwendung eines on-chip-schreibcache eines nichtflüchtigen speichers

Info

Publication number
ATE469420T1
ATE469420T1 AT05854199T AT05854199T ATE469420T1 AT E469420 T1 ATE469420 T1 AT E469420T1 AT 05854199 T AT05854199 T AT 05854199T AT 05854199 T AT05854199 T AT 05854199T AT E469420 T1 ATE469420 T1 AT E469420T1
Authority
AT
Austria
Prior art keywords
write cache
volatile memory
chip write
volatile
array
Prior art date
Application number
AT05854199T
Other languages
English (en)
Inventor
Kevin M Conley
Yoram Cedar
Original Assignee
Sandisk Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sandisk Corp filed Critical Sandisk Corp
Application granted granted Critical
Publication of ATE469420T1 publication Critical patent/ATE469420T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/08—Addressing or allocation; Relocation in hierarchically structured memory systems, e.g. virtual memory systems
    • G06F12/0802—Addressing of a memory level in which the access to the desired data or data block requires associative addressing means, e.g. caches
    • G06F12/0893—Caches characterised by their organisation or structure
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023—Free address space management
    • G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
    • G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/08—Addressing or allocation; Relocation in hierarchically structured memory systems, e.g. virtual memory systems
    • G06F12/0802—Addressing of a memory level in which the access to the desired data or data block requires associative addressing means, e.g. caches
    • G06F12/0804—Addressing of a memory level in which the access to the desired data or data block requires associative addressing means, e.g. caches with main memory updating
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G11C16/3427—Circuits or methods to prevent or reduce disturbance of the state of a memory cell when neighbouring cells are read or written
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/72—Details relating to flash memory management
    • G06F2212/7203—Temporary buffering, e.g. using volatile buffer or dedicated buffer blocks
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/22—Control and timing of internal memory operations
    • G11C2207/2245—Memory devices with an internal cache buffer
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
    • G11C2216/12—Reading and writing aspects of erasable programmable read-only memories
    • G11C2216/14—Circuits or methods to write a page or sector of information simultaneously into a nonvolatile memory, typically a complete row or word line in flash memory

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Memory System Of A Hierarchy Structure (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
AT05854199T 2004-12-21 2005-12-14 System und verfahren zur verwendung eines on-chip-schreibcache eines nichtflüchtigen speichers ATE469420T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/021,200 US7882299B2 (en) 2004-12-21 2004-12-21 System and method for use of on-chip non-volatile memory write cache
PCT/US2005/045431 WO2006068916A1 (en) 2004-12-21 2005-12-14 System and method for use of on-chip non-volatile memory write cache

Publications (1)

Publication Number Publication Date
ATE469420T1 true ATE469420T1 (de) 2010-06-15

Family

ID=36283836

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05854199T ATE469420T1 (de) 2004-12-21 2005-12-14 System und verfahren zur verwendung eines on-chip-schreibcache eines nichtflüchtigen speichers

Country Status (8)

Country Link
US (1) US7882299B2 (de)
EP (1) EP1829047B1 (de)
JP (1) JP4834676B2 (de)
KR (2) KR20100022026A (de)
AT (1) ATE469420T1 (de)
DE (1) DE602005021544D1 (de)
TW (1) TW200634823A (de)
WO (1) WO2006068916A1 (de)

Families Citing this family (87)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7356641B2 (en) * 2001-08-28 2008-04-08 International Business Machines Corporation Data management in flash memory
US9010645B2 (en) * 2003-06-13 2015-04-21 Michael Arnouse Portable computing system and portable computer for use with same
US7702848B2 (en) * 2004-06-10 2010-04-20 Marvell World Trade Ltd. Adaptive storage system including hard disk drive with flash interface
US7788427B1 (en) * 2005-05-05 2010-08-31 Marvell International Ltd. Flash memory interface for disk drive
US7617359B2 (en) * 2004-06-10 2009-11-10 Marvell World Trade Ltd. Adaptive storage system including hard disk drive with flash interface
US7730335B2 (en) 2004-06-10 2010-06-01 Marvell World Trade Ltd. Low power computer with main and auxiliary processors
US7882299B2 (en) 2004-12-21 2011-02-01 Sandisk Corporation System and method for use of on-chip non-volatile memory write cache
KR101185614B1 (ko) * 2005-01-31 2012-09-28 삼성전자주식회사 절전모드가 아닌 동작상태저장과 전원차단으로 구현하는시스템의 소비전력 감소 방법 및 장치
EP2016494A4 (de) * 2006-02-14 2010-02-03 Atmel Corp Beschreiben und einstellen von flash-speichern
US8245109B2 (en) * 2006-03-31 2012-08-14 Hewlett-Packard Development Company, L.P. Error checking and correction (ECC) system and method
US20090282185A1 (en) * 2006-06-30 2009-11-12 Nxp B.V. Flash memory device and a method for using the same
US20080263324A1 (en) 2006-08-10 2008-10-23 Sehat Sutardja Dynamic core switching
JP4304676B2 (ja) * 2006-10-31 2009-07-29 日本電気株式会社 データ転送装置、データ転送方法、及びコンピュータ装置
KR100833512B1 (ko) * 2006-12-08 2008-05-29 한국전자통신연구원 태그의 센싱 데이터 저장 장치 및 그 방법
US7502255B2 (en) * 2007-03-07 2009-03-10 Sandisk Corporation Method for cache page copy in a non-volatile memory
US7499320B2 (en) 2007-03-07 2009-03-03 Sandisk Corporation Non-volatile memory with cache page copy
US8140908B2 (en) * 2007-06-22 2012-03-20 Microsoft Corporation System and method of client side analysis for identifying failing RAM after a user mode or kernel mode exception
JP4743174B2 (ja) * 2007-06-29 2011-08-10 Ｔｄｋ株式会社 メモリコントローラ及びメモリコントローラを備えるフラッシュメモリシステム、並びにフラッシュメモリの制御方法
US9032154B2 (en) * 2007-12-13 2015-05-12 Sandisk Technologies Inc. Integration of secure data transfer applications for generic IO devices
US20090201748A1 (en) * 2008-02-11 2009-08-13 Sony Corporation Removable nonvolatile memory system with destructive read
USRE49124E1 (en) 2008-02-13 2022-07-05 Arnouse Digital Devices Corp. Mobile data center
US11113228B2 (en) 2008-02-13 2021-09-07 Arnouse Digital Devices Corporation Portable computing system and portable computer for use with same
US10235323B2 (en) 2008-02-13 2019-03-19 Michael Arnouse Portable computing system and portable computer for use with same
TWI350453B (en) * 2008-06-13 2011-10-11 Phison Electronics Corp Method, system and controller thereof for transmitting and dispatching data stream
TWI399651B (zh) * 2008-09-12 2013-06-21 Communication protocol method and system for input / output device
TWI405209B (zh) * 2009-04-01 2013-08-11 Phison Electronics Corp 資料管理方法及使用此方法的快閃儲存系統與控制器
US8832353B2 (en) * 2009-04-07 2014-09-09 Sandisk Technologies Inc. Host stop-transmission handling
US8027195B2 (en) * 2009-06-05 2011-09-27 SanDisk Technologies, Inc. Folding data stored in binary format into multi-state format within non-volatile memory devices
US8102705B2 (en) 2009-06-05 2012-01-24 Sandisk Technologies Inc. Structure and method for shuffling data within non-volatile memory devices
US8132045B2 (en) * 2009-06-16 2012-03-06 SanDisk Technologies, Inc. Program failure handling in nonvolatile memory
US8307241B2 (en) * 2009-06-16 2012-11-06 Sandisk Technologies Inc. Data recovery in multi-level cell nonvolatile memory
US20110002169A1 (en) * 2009-07-06 2011-01-06 Yan Li Bad Column Management with Bit Information in Non-Volatile Memory Systems
EP2317442A1 (de) 2009-10-29 2011-05-04 Thomson Licensing Festkörperspeicher mit verringerter Anzahl von zum Teil gefüllten Seiten
US20110153912A1 (en) * 2009-12-18 2011-06-23 Sergey Anatolievich Gorobets Maintaining Updates of Multi-Level Non-Volatile Memory in Binary Non-Volatile Memory
US8144512B2 (en) * 2009-12-18 2012-03-27 Sandisk Technologies Inc. Data transfer flows for on-chip folding
US8468294B2 (en) * 2009-12-18 2013-06-18 Sandisk Technologies Inc. Non-volatile memory with multi-gear control using on-chip folding of data
US8725935B2 (en) 2009-12-18 2014-05-13 Sandisk Technologies Inc. Balanced performance for on-chip folding of non-volatile memories
TWI424438B (zh) * 2009-12-30 2014-01-21 Asolid Technology Co Ltd 非揮發性記憶體控制裝置及其多階重新排序方法
WO2011082703A1 (de) * 2010-01-08 2011-07-14 Hyperstone Gmbh Verfahren zur verwaltung von flashspeichern mit multi-level-zellen
JP5520747B2 (ja) * 2010-08-25 2014-06-11 株式会社日立製作所 キャッシュを搭載した情報装置及びコンピュータ読み取り可能な記憶媒体
JP5414656B2 (ja) 2010-12-01 2014-02-12 株式会社東芝 データ記憶装置、メモリ制御装置及びメモリ制御方法
KR20120091648A (ko) * 2011-02-09 2012-08-20 삼성전자주식회사 비휘발성 메모리, 이를 포함하는 시스템, 및 이의 프로그램 방법
US20120221809A1 (en) * 2011-02-28 2012-08-30 Hitachi, Ltd. Storage apparatus and data processing method of the same
US9342446B2 (en) 2011-03-29 2016-05-17 SanDisk Technologies, Inc. Non-volatile memory system allowing reverse eviction of data updates to non-volatile binary cache
US9898402B2 (en) 2011-07-01 2018-02-20 Micron Technology, Inc. Unaligned data coalescing
US8687453B2 (en) * 2011-10-12 2014-04-01 Wisconsin Alumni Research Foundation Energy efficient processor having heterogeneous cache
US9911470B2 (en) 2011-12-15 2018-03-06 Nvidia Corporation Fast-bypass memory circuit
US8842473B2 (en) 2012-03-15 2014-09-23 Sandisk Technologies Inc. Techniques for accessing column selecting shift register with skipped entries in non-volatile memories
US10101769B2 (en) 2012-04-10 2018-10-16 Michael Arnouse Mobile data center
US8681548B2 (en) 2012-05-03 2014-03-25 Sandisk Technologies Inc. Column redundancy circuitry for non-volatile memory
CN103632712A (zh) 2012-08-27 2014-03-12 辉达公司 存储单元和存储器
US9058126B2 (en) * 2012-09-10 2015-06-16 Texas Instruments Incorporated Nonvolatile logic array with retention flip flops to reduce switching power during wakeup
US9076506B2 (en) 2012-09-28 2015-07-07 Sandisk Technologies Inc. Variable rate parallel to serial shift register
US8897080B2 (en) 2012-09-28 2014-11-25 Sandisk Technologies Inc. Variable rate serial to parallel shift register
US9490035B2 (en) 2012-09-28 2016-11-08 SanDisk Technologies, Inc. Centralized variable rate serializer and deserializer for bad column management
US9685207B2 (en) 2012-12-04 2017-06-20 Nvidia Corporation Sequential access memory with master-slave latch pairs and method of operating
US9081712B2 (en) * 2012-12-21 2015-07-14 Dell Products, L.P. System and method for using solid state storage systems as a cache for the storage of temporary data
KR20150098649A (ko) 2012-12-22 2015-08-28 퀄컴 인코포레이티드 비-휘발성 메모리의 이용을 통한 휘발성 메모리의 전력 소비 감소
US9405621B2 (en) * 2012-12-28 2016-08-02 Super Talent Technology, Corp. Green eMMC device (GeD) controller with DRAM data persistence, data-type splitting, meta-page grouping, and diversion of temp files for enhanced flash endurance
US9281817B2 (en) 2012-12-31 2016-03-08 Nvidia Corporation Power conservation using gray-coded address sequencing
US9384839B2 (en) * 2013-03-07 2016-07-05 Sandisk Technologies Llc Write sequence providing write abort protection
US9037902B2 (en) 2013-03-15 2015-05-19 Sandisk Technologies Inc. Flash memory techniques for recovering from write interrupt resulting from voltage fault
US10141930B2 (en) 2013-06-04 2018-11-27 Nvidia Corporation Three state latch
US20150089118A1 (en) * 2013-09-20 2015-03-26 Sandisk Technologies Inc. Methods, systems, and computer readable media for partition and cache restore
US9218282B2 (en) 2013-10-31 2015-12-22 Micron Technology, Inc. Memory system data management
US9323614B2 (en) 2013-11-06 2016-04-26 Wisconsin Alumni Research Foundation Dynamic error handling for on-chip memory structures
KR20160007972A (ko) * 2014-07-10 2016-01-21 삼성전자주식회사 불 휘발성 메모리 장치 및 메모리 컨트롤러, 그리고 그것의 동작 방법
JP5804584B1 (ja) * 2014-10-30 2015-11-04 ウィンボンド エレクトロニクス コーポレーション Ｎａｎｄ型フラッシュメモリのプログラム方法
US9934872B2 (en) 2014-10-30 2018-04-03 Sandisk Technologies Llc Erase stress and delta erase loop count methods for various fail modes in non-volatile memory
US9224502B1 (en) 2015-01-14 2015-12-29 Sandisk Technologies Inc. Techniques for detection and treating memory hole to local interconnect marginality defects
US10032524B2 (en) 2015-02-09 2018-07-24 Sandisk Technologies Llc Techniques for determining local interconnect defects
US9269446B1 (en) 2015-04-08 2016-02-23 Sandisk Technologies Inc. Methods to improve programming of slow cells
US9564219B2 (en) 2015-04-08 2017-02-07 Sandisk Technologies Llc Current based detection and recording of memory hole-interconnect spacing defects
KR102739276B1 (ko) * 2016-09-20 2024-12-05 삼성전자주식회사 메모리 컨트롤러의 동작 방법과, 이를 포함하는 장치들의 동작 방법들
US10318423B2 (en) 2016-12-14 2019-06-11 Macronix International Co., Ltd. Methods and systems for managing physical information of memory units in a memory device
EP3394758A4 (de) * 2017-01-23 2019-02-20 Micron Technology, Inc. Behandlung eines teilweise geschriebenen blocks
US10318417B2 (en) * 2017-03-31 2019-06-11 Intel Corporation Persistent caching of memory-side cache content
FR3072476A1 (fr) * 2017-10-13 2019-04-19 Proton World International N.V. Unite logique de memoire pour memoire flash
US11037627B2 (en) 2017-11-29 2021-06-15 Western Digital Technologies, Inc. Cell block allocation for hybrid dual write
KR102243923B1 (ko) 2018-12-31 2021-04-22 강원대학교산학협력단 캐쉬를 동반한 효율적인 페이지 컬렉션 매핑을 이용하는 비휘발성 메모리 장치 및 그 동작 방법
KR102904092B1 (ko) 2019-05-17 2025-12-24 양쯔 메모리 테크놀로지스 씨오., 엘티디. 정적 랜덤 액세스 메모리가 있는 3차원 메모리 디바이스
CN110291586B (zh) 2019-05-17 2020-10-30 长江存储科技有限责任公司 具有静态随机存取存储器的三维存储器件的高速缓存程序操作
KR102456176B1 (ko) * 2020-05-21 2022-10-19 에스케이하이닉스 주식회사 메모리 컨트롤러 및 그 동작 방법
US11573891B2 (en) 2019-11-25 2023-02-07 SK Hynix Inc. Memory controller for scheduling commands based on response for receiving write command, storage device including the memory controller, and operating method of the memory controller and the storage device
US11816343B2 (en) 2020-11-30 2023-11-14 Western Digital Technologies, Inc. Data storage device enabling latches of non-volatile memory dies for use as externally-accessible volatile memory
US11966621B2 (en) * 2022-02-17 2024-04-23 Sandisk Technologies Llc Non-volatile storage system with program execution decoupled from dataload
US12197329B2 (en) * 2022-12-09 2025-01-14 Advanced Micro Devices, Inc. Range-based cache flushing

Family Cites Families (96)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4725945A (en) 1984-09-18 1988-02-16 International Business Machines Corp. Distributed cache in dynamic rams
JPH01302444A (ja) * 1988-05-31 1989-12-06 Toshiba Corp 論理アドレスキャッシュ制御方式
US5095344A (en) 1988-06-08 1992-03-10 Eliyahou Harari Highly compact eprom and flash eeprom devices
US5043940A (en) 1988-06-08 1991-08-27 Eliyahou Harari Flash EEPROM memory systems having multistate storage cells
US5070032A (en) 1989-03-15 1991-12-03 Sundisk Corporation Method of making dense flash eeprom semiconductor memory structures
DE69024086T2 (de) 1989-04-13 1996-06-20 Sundisk Corp EEprom-System mit Blocklöschung
US5172338B1 (en) 1989-04-13 1997-07-08 Sandisk Corp Multi-state eeprom read and write circuits and techniques
US5087975A (en) * 1990-11-09 1992-02-11 Zenith Electronics Corporation VSB HDTV transmission system with reduced NTSC co-channel interference
US5343063A (en) 1990-12-18 1994-08-30 Sundisk Corporation Dense vertical programmable read only memory cell structure and processes for making them
JP2549034B2 (ja) * 1991-07-22 1996-10-30 株式会社メルコ 記憶装置
JPH05216775A (ja) * 1991-10-29 1993-08-27 Hitachi Ltd 半導体記憶装置
US6222762B1 (en) 1992-01-14 2001-04-24 Sandisk Corporation Multi-state memory
US5313421A (en) 1992-01-14 1994-05-17 Sundisk Corporation EEPROM with split gate source side injection
JPH05233464A (ja) 1992-02-25 1993-09-10 Fuji Photo Film Co Ltd Ｅｅｐｒｏｍのデータ書換方法およびｅｅｐｒｏｍカード
JPH05299616A (ja) 1992-04-16 1993-11-12 Hitachi Ltd 半導体記憶装置
US5532962A (en) 1992-05-20 1996-07-02 Sandisk Corporation Soft errors handling in EEPROM devices
US5315541A (en) 1992-07-24 1994-05-24 Sundisk Corporation Segmented column memory array
US6078520A (en) * 1993-04-08 2000-06-20 Hitachi, Ltd. Flash memory control method and information processing system therewith
JPH07146820A (ja) * 1993-04-08 1995-06-06 Hitachi Ltd フラッシュメモリの制御方法及び、それを用いた情報処理装置
KR970008188B1 (ko) * 1993-04-08 1997-05-21 가부시끼가이샤 히다찌세이사꾸쇼 플래시메모리의 제어방법 및 그것을 사용한 정보처리장치
US5555204A (en) 1993-06-29 1996-09-10 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device
KR0169267B1 (ko) 1993-09-21 1999-02-01 사토 후미오 불휘발성 반도체 기억장치
US5726937A (en) * 1994-01-31 1998-03-10 Norand Corporation Flash memory system having memory cache
US6026027A (en) * 1994-01-31 2000-02-15 Norand Corporation Flash memory system having memory cache
US5438549A (en) * 1994-02-28 1995-08-01 Intel Corporation Nonvolatile memory with volatile memory buffer and a backup power supply system
US5661053A (en) 1994-05-25 1997-08-26 Sandisk Corporation Method of making dense flash EEPROM cell array and peripheral supporting circuits formed in deposited field oxide with the use of spacers
US5586291A (en) * 1994-12-23 1996-12-17 Emc Corporation Disk controller with volatile and non-volatile cache memories
JPH08314794A (ja) * 1995-02-28 1996-11-29 Matsushita Electric Ind Co Ltd 安定記憶装置へのアクセス待ち時間を短縮するための方法およびシステム
US5606532A (en) 1995-03-17 1997-02-25 Atmel Corporation EEPROM array with flash-like core
US6412045B1 (en) * 1995-05-23 2002-06-25 Lsi Logic Corporation Method for transferring data from a host computer to a storage media using selectable caching strategies
US5579259A (en) 1995-05-31 1996-11-26 Sandisk Corporation Low voltage erase of a flash EEPROM system having a common erase electrode for two individually erasable sectors
US5956744A (en) * 1995-09-08 1999-09-21 Texas Instruments Incorporated Memory configuration cache with multilevel hierarchy least recently used cache entry replacement
US5933847A (en) * 1995-09-28 1999-08-03 Canon Kabushiki Kaisha Selecting erase method based on type of power supply for flash EEPROM
US5712179A (en) 1995-10-31 1998-01-27 Sandisk Corporation Method of making triple polysilicon flash EEPROM arrays having a separate erase gate for each row of floating gates
US5903495A (en) 1996-03-18 1999-05-11 Kabushiki Kaisha Toshiba Semiconductor device and memory system
US5996047A (en) * 1996-07-01 1999-11-30 Sun Microsystems, Inc. Method and apparatus for caching file control information corresponding to a second file block in a first file block
US5798968A (en) 1996-09-24 1998-08-25 Sandisk Corporation Plane decode/virtual sector architecture
EP0834812A1 (de) * 1996-09-30 1998-04-08 Cummins Engine Company, Inc. Verfahren zum Zugreifen auf einen Flash-Speicher und elektronisches Steuersystem eines Kraftfahrzeuges
US5890192A (en) 1996-11-05 1999-03-30 Sandisk Corporation Concurrent write of multiple chunks of data into multiple subarrays of flash EEPROM
US5937423A (en) 1996-12-26 1999-08-10 Intel Corporation Register interface for flash EEPROM memory arrays
US5930167A (en) 1997-07-30 1999-07-27 Sandisk Corporation Multi-state non-volatile flash memory capable of being its own two state write cache
US6000006A (en) * 1997-08-25 1999-12-07 Bit Microsystems, Inc. Unified re-map and cache-index table with dual write-counters for wear-leveling of non-volatile flash RAM mass storage
US5909449A (en) 1997-09-08 1999-06-01 Invox Technology Multibit-per-cell non-volatile memory with error detection and correction
US6035347A (en) * 1997-12-19 2000-03-07 International Business Machines Corporation Secure store implementation on common platform storage subsystem (CPSS) by storing write data in non-volatile buffer
US6263398B1 (en) 1998-02-10 2001-07-17 Ramtron International Corporation Integrated circuit memory device incorporating a non-volatile memory array and a relatively faster access time memory cache
JP2000132983A (ja) * 1998-10-26 2000-05-12 Sony Corp 情報記録媒体素子、情報記録装置及び情報記録方法、並びに情報再生装置及び情報再生方法
US6249841B1 (en) 1998-12-03 2001-06-19 Ramtron International Corporation Integrated circuit memory device and method incorporating flash and ferroelectric random access memory arrays
US6349363B2 (en) 1998-12-08 2002-02-19 Intel Corporation Multi-section cache with different attributes for each section
GB9903490D0 (en) * 1999-02-17 1999-04-07 Memory Corp Plc Memory system
JP2000276402A (ja) * 1999-03-24 2000-10-06 Kokusai Electric Co Ltd フラッシュメモリ駆動方法及びフラッシュメモリ装置
US6405323B1 (en) * 1999-03-30 2002-06-11 Silicon Storage Technology, Inc. Defect management for interface to electrically-erasable programmable read-only memory
JP4074029B2 (ja) * 1999-06-28 2008-04-09 株式会社東芝 フラッシュメモリ
US6708257B2 (en) 1999-07-12 2004-03-16 Koninklijke Philips Electronics N.V. Buffering system bus for external-memory access
US6434669B1 (en) 1999-09-07 2002-08-13 International Business Machines Corporation Method of cache management to dynamically update information-type dependent cache policies
JP3578265B2 (ja) 1999-11-19 2004-10-20 日本電気株式会社 不揮発性メモリへのデータ書き込み方法および情報処理装置ならびに記録媒体
JP2001243110A (ja) * 1999-12-20 2001-09-07 Tdk Corp メモリコントローラ、フラッシュメモリシステム及びフラッシュメモリへのアクセス方法
US6647499B1 (en) 2000-01-26 2003-11-11 International Business Machines Corporation System for powering down a disk storage device to an idle state upon trnsfer to an intermediate storage location accessible by system processor
US6329687B1 (en) * 2000-01-27 2001-12-11 Advanced Micro Devices, Inc. Two bit flash cell with two floating gate regions
US6426893B1 (en) 2000-02-17 2002-07-30 Sandisk Corporation Flash eeprom system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks
US6601137B1 (en) * 2000-04-19 2003-07-29 Western Digital Technologies, Inc. Range-based cache control system and method
JP2001344986A (ja) 2000-06-05 2001-12-14 Mitsubishi Electric Corp 不揮発性半導体記憶装置
ATE293810T1 (de) 2000-06-27 2005-05-15 Koninkl Philips Electronics Nv Integrierte schaltung mit flash
US6721843B1 (en) 2000-07-07 2004-04-13 Lexar Media, Inc. Flash memory architecture implementing simultaneously programmable multiple flash memory banks that are host compatible
US7113432B2 (en) * 2000-09-14 2006-09-26 Sandisk Corporation Compressed event counting technique and application to a flash memory system
US6529416B2 (en) * 2000-11-30 2003-03-04 Bitmicro Networks, Inc. Parallel erase operations in memory systems
US6349056B1 (en) 2000-12-28 2002-02-19 Sandisk Corporation Method and structure for efficient data verification operation for non-volatile memories
US6763424B2 (en) 2001-01-19 2004-07-13 Sandisk Corporation Partial block data programming and reading operations in a non-volatile memory
JP2002222120A (ja) * 2001-01-26 2002-08-09 Sony Corp メモリ・アクセス管理装置並びに管理方法
US6836816B2 (en) * 2001-03-28 2004-12-28 Intel Corporation Flash memory low-latency cache
US6941414B2 (en) 2001-05-15 2005-09-06 International Business Machines Corporation High speed embedded DRAM with SRAM-like interface
US6549977B1 (en) * 2001-05-23 2003-04-15 3Ware, Inc. Use of deferred write completion interrupts to increase the performance of disk operations
JP4049297B2 (ja) 2001-06-11 2008-02-20 株式会社ルネサステクノロジ 半導体記憶装置
US6522580B2 (en) 2001-06-27 2003-02-18 Sandisk Corporation Operating techniques for reducing effects of coupling between storage elements of a non-volatile memory operated in multiple data states
US6717847B2 (en) 2001-09-17 2004-04-06 Sandisk Corporation Selective operation of a multi-state non-volatile memory system in a binary mode
US6456528B1 (en) * 2001-09-17 2002-09-24 Sandisk Corporation Selective operation of a multi-state non-volatile memory system in a binary mode
US6925007B2 (en) 2001-10-31 2005-08-02 Sandisk Corporation Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements
US6871257B2 (en) * 2002-02-22 2005-03-22 Sandisk Corporation Pipelined parallel programming operation in a non-volatile memory system
US6798353B2 (en) * 2002-04-24 2004-09-28 Itron Electricity Metering, Inc. Method of using flash memory for storing metering data
JP3876771B2 (ja) * 2002-06-12 2007-02-07 日本電気株式会社 情報処理装置及びそれに用いるキャッシュフラッシュ制御方法
US6941412B2 (en) 2002-08-29 2005-09-06 Sandisk Corporation Symbol frequency leveling in a storage system
US6822899B1 (en) * 2002-12-23 2004-11-23 Cypress Semiconductor Corporation Method of protecting flash memory from data corruption during fast power down events
US20040193782A1 (en) * 2003-03-26 2004-09-30 David Bordui Nonvolatile intelligent flash cache memory
JP2004326974A (ja) * 2003-04-25 2004-11-18 Toshiba Corp 半導体集積回路装置及びｉｃカード
JP4563715B2 (ja) * 2003-04-29 2010-10-13 三星電子株式会社 パーシャルコピーバック動作モードを有するフラッシュメモリ装置
US20050050261A1 (en) * 2003-08-27 2005-03-03 Thomas Roehr High density flash memory with high speed cache data interface
US7099993B2 (en) * 2003-09-24 2006-08-29 Seagate Technology Llc Multi-level caching in data storage devices
US7127560B2 (en) * 2003-10-14 2006-10-24 International Business Machines Corporation Method of dynamically controlling cache size
US7174421B2 (en) * 2003-12-04 2007-02-06 Matsushita Electric Industrial Co., Ltd. HDD with rapid availability of critical data after critical event
US7480760B2 (en) * 2003-12-17 2009-01-20 Wegener Communications, Inc. Rotational use of memory to minimize write cycles
US20050251617A1 (en) * 2004-05-07 2005-11-10 Sinclair Alan W Hybrid non-volatile memory system
US7139864B2 (en) * 2003-12-30 2006-11-21 Sandisk Corporation Non-volatile memory and method with block management system
US7490283B2 (en) 2004-05-13 2009-02-10 Sandisk Corporation Pipelined data relocation and improved chip architectures
US8429313B2 (en) 2004-05-27 2013-04-23 Sandisk Technologies Inc. Configurable ready/busy control
US7315916B2 (en) * 2004-12-16 2008-01-01 Sandisk Corporation Scratch pad block
US7882299B2 (en) 2004-12-21 2011-02-01 Sandisk Corporation System and method for use of on-chip non-volatile memory write cache
US20060268916A1 (en) * 2005-05-09 2006-11-30 Sarkar Susanta P Reliable short messaging service

Also Published As

Publication number Publication date
JP4834676B2 (ja) 2011-12-14
JP2008524747A (ja) 2008-07-10
DE602005021544D1 (de) 2010-07-08
TW200634823A (en) 2006-10-01
KR101040961B1 (ko) 2011-06-16
EP1829047B1 (de) 2010-05-26
US7882299B2 (en) 2011-02-01
KR20100022026A (ko) 2010-02-26
WO2006068916A1 (en) 2006-06-29
US20060136656A1 (en) 2006-06-22
EP1829047A1 (de) 2007-09-05
KR20070104529A (ko) 2007-10-26

Similar Documents

Publication Publication Date Title
ATE469420T1 (de) System und verfahren zur verwendung eines on-chip-schreibcache eines nichtflüchtigen speichers
TW200605080A (en) Method of reading NAND memory to compensate for coupling between storage elements
TWI349289B (en) Nonvolatile memory system, data read/write method for nonvolatile memory system, data read method for memory system, and data write method for memory system
TW200638425A (en) Nonvolatile memory devices that support virtual page storage using odd-state memory cells and methods of programming same
TW200707189A (en) Memory block erasing in a flash memory device
TW200834304A (en) Non-volatile semiconductor memory system and data write method thereof
EP1929482A4 (de) Tragbare datenspeicherung unter verwendung von slc- und mlc-flash-speicher
ATE321339T1 (de) Techniken zur reduzierung von kopplungseffekten zwischen speicherzellen benachbarter zeilen
ATE423380T1 (de) Robuste datenvervielfältigung und verbessertes aktualisierungsverfahren in einem nichtflüchtigen mehrbitspeicher
TWI316207B (en) Memory system and method of writing into nonvolatile semiconductor memory
ZA200702598B (en) Method of using flash memory for storing metering data
WO2012100730A3 (zh) 数据安全擦除方法及装置
DE60301119D1 (de) Nichtflüchtige SRAM Speicherzelle
WO2008050337A3 (en) Erase history-based flash writing method
TW200703342A (en) Erasing non-volatile memory using individual verification and additional erasing of subsets of memory cells
EP1721321A4 (de) Nichtflüchtige speichermatrix mit dem merkmal von gleichzeitigem schreiben und löschen
ATE544157T1 (de) Verifizierungsoperation für nichtflüchtige speicherung unter verwendung verschiedener spannungen
TW200715293A (en) Memory device and method for operating the same
TW200701237A (en) Reference scheme for a non-volatile semiconductor memory device
TW200709210A (en) Memory controller, non-volatile memory device, non-volatile memory system, and data writing method
TW200703360A (en) Page buffer architecture for programming, erasing and reading nanoscale resistive memory devices
TW200515420A (en) Flash memory with byte erase
EP1886226A4 (de) Assoziativer speicher und datensuchsystem und -verfahren
SG105590A1 (en) Single bit nonvolatile memory cell and methods for programming and erasing thereof
TW200703340A (en) Soft programming non-volatile memory utilizing individual verification and additional soft programming of subsets of memory cells

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties