ATE476859T1 - Einrichtung und verfahren zur erzeugung von extrem-ultraviolett-und/oder weicher röntgenstrahlung mittels eines plasmas - Google Patents

Einrichtung und verfahren zur erzeugung von extrem-ultraviolett-und/oder weicher röntgenstrahlung mittels eines plasmas

Info

Publication number
ATE476859T1
ATE476859T1 AT04718711T AT04718711T ATE476859T1 AT E476859 T1 ATE476859 T1 AT E476859T1 AT 04718711 T AT04718711 T AT 04718711T AT 04718711 T AT04718711 T AT 04718711T AT E476859 T1 ATE476859 T1 AT E476859T1
Authority
AT
Austria
Prior art keywords
plasma
soft
extreme ultraviolet
ray
generating extreme
Prior art date
Application number
AT04718711T
Other languages
English (en)
Inventor
Peter Zink
Original Assignee
Koninkl Philips Electronics Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Electronics Nv filed Critical Koninkl Philips Electronics Nv
Application granted granted Critical
Publication of ATE476859T1 publication Critical patent/ATE476859T1/de

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/002—Supply of the plasma generating material
    • H05G2/0027—Arrangements for controlling the supply; Arrangements for measurements

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • X-Ray Techniques (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
AT04718711T 2003-03-18 2004-03-09 Einrichtung und verfahren zur erzeugung von extrem-ultraviolett-und/oder weicher röntgenstrahlung mittels eines plasmas ATE476859T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP03100681 2003-03-18
PCT/IB2004/050213 WO2004084592A2 (en) 2003-03-18 2004-03-09 Device for and method of generating extreme ultraviolet and/or soft x-ray radiation by means of a plasma

Publications (1)

Publication Number Publication Date
ATE476859T1 true ATE476859T1 (de) 2010-08-15

Family

ID=33016959

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04718711T ATE476859T1 (de) 2003-03-18 2004-03-09 Einrichtung und verfahren zur erzeugung von extrem-ultraviolett-und/oder weicher röntgenstrahlung mittels eines plasmas

Country Status (7)

Country Link
US (1) US7460646B2 (de)
EP (1) EP1606980B1 (de)
CN (1) CN100391316C (de)
AT (1) ATE476859T1 (de)
DE (1) DE602004028446D1 (de)
TW (1) TW200501836A (de)
WO (1) WO2004084592A2 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6770895B2 (en) 2002-11-21 2004-08-03 Asml Holding N.V. Method and apparatus for isolating light source gas from main chamber gas in a lithography tool
US6919573B2 (en) 2003-03-20 2005-07-19 Asml Holding N.V Method and apparatus for recycling gases used in a lithography tool
DE102004005241B4 (de) 2004-01-30 2006-03-02 Xtreme Technologies Gmbh Verfahren und Einrichtung zur plasmabasierten Erzeugung weicher Röntgenstrahlung
DE102004037521B4 (de) * 2004-07-30 2011-02-10 Xtreme Technologies Gmbh Vorrichtung zur Bereitstellung von Targetmaterial für die Erzeugung kurzwelliger elektromagnetischer Strahlung
DE102005007884A1 (de) 2005-02-15 2006-08-24 Xtreme Technologies Gmbh Vorrichtung und Verfahren zur Erzeugung von extrem ultravioletter (EUV-) Strahlung
JP5156192B2 (ja) * 2006-01-24 2013-03-06 ギガフォトン株式会社 極端紫外光源装置
DE102006017904B4 (de) 2006-04-13 2008-07-03 Xtreme Technologies Gmbh Anordnung zur Erzeugung von extrem ultravioletter Strahlung aus einem energiestrahlerzeugten Plasma mit hoher Konversionseffizienz und minimaler Kontamination
JP5386799B2 (ja) * 2007-07-06 2014-01-15 株式会社ニコン Ｅｕｖ光源、ｅｕｖ露光装置、ｅｕｖ光放射方法、ｅｕｖ露光方法および電子デバイスの製造方法
KR20100106982A (ko) * 2007-11-22 2010-10-04 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 조사 장치 내에 배열된 수집기 광학계의 동작 수명 향상 방법 및 대응 조사 장치
KR101697610B1 (ko) * 2008-09-11 2017-01-18 에이에스엠엘 네델란즈 비.브이. 방사선 소스 및 리소그래피 장치
WO2011013779A1 (ja) * 2009-07-29 2011-02-03 株式会社小松製作所 極端紫外光源装置、極端紫外光源装置の制御方法、およびそのプログラムを記録した記録媒体
WO2011100322A2 (en) 2010-02-09 2011-08-18 Energetiq Technology, Inc. Laser-driven light source
JP6010438B2 (ja) * 2012-11-27 2016-10-19 浜松ホトニクス株式会社 量子ビーム生成装置、量子ビーム生成方法、及び、レーザ核融合装置
US9301381B1 (en) * 2014-09-12 2016-03-29 International Business Machines Corporation Dual pulse driven extreme ultraviolet (EUV) radiation source utilizing a droplet comprising a metal core with dual concentric shells of buffer gas
NL2023879A (en) * 2018-09-26 2020-05-01 Asml Netherlands Bv Apparatus for and method of controlling introduction of euv target material into an euv chamber
US11587781B2 (en) 2021-05-24 2023-02-21 Hamamatsu Photonics K.K. Laser-driven light source with electrodeless ignition
US12165856B2 (en) 2022-02-21 2024-12-10 Hamamatsu Photonics K.K. Inductively coupled plasma light source
US12144072B2 (en) 2022-03-29 2024-11-12 Hamamatsu Photonics K.K. All-optical laser-driven light source with electrodeless ignition
US12156322B2 (en) 2022-12-08 2024-11-26 Hamamatsu Photonics K.K. Inductively coupled plasma light source with switched power supply
US12578076B2 (en) 2023-06-05 2026-03-17 Hamamatsu Photonics K.K. Dual-output laser-driven light source

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Publication number Priority date Publication date Assignee Title
DE3586244T2 (de) 1984-12-26 2000-04-20 Kabushiki Kaisha Toshiba Vorrichtung zur Erzeugung von Weich-Röntgenstrahlen durch ein Hochenergiebündel.
US5270542A (en) * 1992-12-31 1993-12-14 Regents Of The University Of Minnesota Apparatus and method for shaping and detecting a particle beam
JPH10221499A (ja) * 1997-02-07 1998-08-21 Hitachi Ltd レーザプラズマｘ線源およびそれを用いた半導体露光装置並びに半導体露光方法
US6075838A (en) * 1998-03-18 2000-06-13 Plex Llc Z-pinch soft x-ray source using diluent gas
JP2001108799A (ja) 1999-10-08 2001-04-20 Nikon Corp Ｘ線発生装置、ｘ線露光装置及び半導体デバイスの製造方法
FR2799667B1 (fr) * 1999-10-18 2002-03-08 Commissariat Energie Atomique Procede et dispositif de generation d'un brouillard dense de gouttelettes micrometriques et submicrometriques, application a la generation de lumiere dans l'extreme ultraviolet notamment pour la lithographie
AU1241401A (en) 1999-10-27 2001-05-08 Jmar Research, Inc. Method and radiation generating system using microtargets
CN1300179A (zh) * 1999-12-16 2001-06-20 中国科学院长春光学精密机械研究所 喷气靶激光等离子体软x射线源
TWI246872B (en) * 1999-12-17 2006-01-01 Asml Netherlands Bv Radiation source for use in lithographic projection apparatus
FR2823949A1 (fr) * 2001-04-18 2002-10-25 Commissariat Energie Atomique Procede et dispositif de generation de lumiere dans l'extreme ultraviolet notamment pour la lithographie
US6738452B2 (en) * 2002-05-28 2004-05-18 Northrop Grumman Corporation Gasdynamically-controlled droplets as the target in a laser-plasma extreme ultraviolet light source

Also Published As

Publication number Publication date
CN100391316C (zh) 2008-05-28
US7460646B2 (en) 2008-12-02
TW200501836A (en) 2005-01-01
CN1762183A (zh) 2006-04-19
US20060203965A1 (en) 2006-09-14
EP1606980A2 (de) 2005-12-21
DE602004028446D1 (de) 2010-09-16
WO2004084592A2 (en) 2004-09-30
WO2004084592A3 (en) 2005-01-13
EP1606980B1 (de) 2010-08-04

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