ATE480650T1 - Tiegel zur behandlung von schmelzflüssigem silicium und verfahren zu seiner herstellung - Google Patents

Tiegel zur behandlung von schmelzflüssigem silicium und verfahren zu seiner herstellung

Info

Publication number: ATE480650T1
Authority: AT; Austria
Prior art keywords: crucificate; producing; melted silicon; crucible; basic body
Prior art date: 2006-01-12

Application number

AT07702727T

Other languages

English (en)

Inventor

Gilbert Rancoule

Original Assignee

Vesuvius Crucible Co

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2006-01-12

Filing date

2007-01-12

Publication date

2010-09-15

2007-01-12 Application filed by Vesuvius Crucible Co filed Critical Vesuvius Crucible Co

2010-09-15 Application granted granted Critical

2010-09-15 Publication of ATE480650T1 publication Critical patent/ATE480650T1/de

Links

238000004519 manufacturing process Methods 0.000 title abstract 2
229910052710 silicon Inorganic materials 0.000 title 1
239000010703 silicon Substances 0.000 title 1
229910052581 Si3N4 Inorganic materials 0.000 abstract 2
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 2
229910052814 silicon oxide Inorganic materials 0.000 abstract 2
239000011248 coating agent Substances 0.000 abstract 1
238000000576 coating method Methods 0.000 abstract 1
HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract 1
229910010271 silicon carbide Inorganic materials 0.000 abstract 1

Classifications

- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/002—Crucibles or containers for supporting the melt
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state

Landscapes

Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Crystallography & Structural Chemistry (AREA)
Materials Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Silicon Compounds (AREA)
Crystals, And After-Treatments Of Crystals (AREA)
Ceramic Products (AREA)
Crucibles And Fluidized-Bed Furnaces (AREA)
Mold Materials And Core Materials (AREA)
Transition And Organic Metals Composition Catalysts For Addition Polymerization (AREA)
Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
Press Drives And Press Lines (AREA)

AT07702727T 2006-01-12 2007-01-12 Tiegel zur behandlung von schmelzflüssigem silicium und verfahren zu seiner herstellung ATE480650T1 (de)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
EP06447007A EP1811064A1 (de)	2006-01-12	2006-01-12	Tiegel zur Behandlung einer Siliciumschmelze
PCT/EP2007/000254 WO2007080120A1 (en)	2006-01-12	2007-01-12	Crucible for the treatment of molten silicon

Publications (1)

Publication Number	Publication Date
ATE480650T1 true ATE480650T1 (de)	2010-09-15

Family

ID=36507605

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
AT07702727T ATE480650T1 (de)	2006-01-12	2007-01-12	Tiegel zur behandlung von schmelzflüssigem silicium und verfahren zu seiner herstellung

Country Status (20)

Country	Link
US (1)	US7833490B2 (de)
EP (2)	EP1811064A1 (de)
JP (1)	JP5400392B2 (de)
KR (1)	KR101212916B1 (de)
CN (1)	CN101370968A (de)
AT (1)	ATE480650T1 (de)
AU (1)	AU2007204406B2 (de)
BR (1)	BRPI0706222A2 (de)
CA (1)	CA2634199C (de)
DE (1)	DE602007009043D1 (de)
DK (1)	DK1979512T3 (de)
ES (1)	ES2349158T3 (de)
NO (1)	NO20083468L (de)
PT (1)	PT1979512E (de)
RU (1)	RU2423558C2 (de)
SI (1)	SI1979512T1 (de)
TW (1)	TWI395841B (de)
UA (1)	UA89717C2 (de)
WO (1)	WO2007080120A1 (de)
ZA (1)	ZA200805509B (de)

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* Cited by examiner, † Cited by third party
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TWI400369B (zh) *	2005-10-06	2013-07-01	Vesuvius Crucible Co	用於矽結晶的坩堝及其製造方法
TWI401343B (zh) *	2009-06-25	2013-07-11	Wafer Works Corp	具有保護層之石英玻璃坩堝及其製造方法
EP2543751A3 (de) *	2009-07-16	2013-06-26	MEMC Singapore Pte. Ltd.	Beschichtete Tiegel sowie Verfahren zu ihrer Herstellung und Verwendung
NO20092797A1 (no) *	2009-07-31	2011-02-01	Nordic Ceramics As	Digel
DE102010000687B4 (de) *	2010-01-05	2012-10-18	Solarworld Innovations Gmbh	Tiegel und Verfahren zur Herstellung von Silizium-Blöcken
US20110180229A1 (en) *	2010-01-28	2011-07-28	Memc Singapore Pte. Ltd. (Uen200614794D)	Crucible For Use In A Directional Solidification Furnace
JP2011219286A (ja) *	2010-04-06	2011-11-04	Koji Tomita	シリコン及び炭化珪素の製造方法及び製造装置
EP2655705B1 (de) *	2010-12-22	2015-01-28	Steuler Solar GmbH	Tiegel
WO2012092369A2 (en) *	2010-12-30	2012-07-05	Saint-Gobain Ceramics & Plastics, Inc.	Crucible body and method of forming same
US20120248286A1 (en)	2011-03-31	2012-10-04	Memc Singapore Pte. Ltd. (Uen200614794D)	Systems For Insulating Directional Solidification Furnaces
CN102862986A (zh) *	2012-04-19	2013-01-09	北京民海艳科技有限公司	冶金法生产太阳能多晶硅用定向凝固器及多晶硅生产方法
CN103774209B (zh) *	2012-10-26	2016-06-15	阿特斯(中国)投资有限公司	硅铸锭用坩埚及其涂层制备方法
CN103060908A (zh) *	2013-01-06	2013-04-24	奥特斯维能源（太仓）有限公司	双层陶瓷坩埚
TWI663126B (zh) *	2014-07-09	2019-06-21	法商維蘇威法國公司	包含可磨塗層之輥、其製造方法及其用途
JP5935021B2 (ja) *	2015-02-20	2016-06-15	蒲池　豊	シリコン結晶の製造方法
CN111848201B (zh) *	2020-07-24	2022-09-02	西安超码科技有限公司	一种具有碳化硅/硅涂层的炭/炭坩埚及其制备方法

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DE962868C (de) *	1953-04-09	1957-04-25	Standard Elektrik Ag	Tiegel zum Herstellen reinsten Halbleitermaterials, insbesondere von Silizium und dessen Verwendung
GB1450825A (en) *	1974-05-02	1976-09-29	Smiths Industries Ltd	Methods of manufacturing semiconductor bodies and to the products of such methods
US4141726A (en) *	1977-04-04	1979-02-27	The Research Institute For Iron, Steel And Other Metals Of The Tohoku University	Method for producing composite materials consisting of continuous silicon carbide fibers and beryllium
GB2029817A (en) *	1978-09-06	1980-03-26	Thorn Electrical Ind Ltd	Sealing of ceramic and cermet partds
JPS5953209B2 (ja) *	1981-08-06	1984-12-24	工業技術院長	多結晶シリコンインゴットの鋳造法
US4590043A (en)	1982-12-27	1986-05-20	Sri International	Apparatus for obtaining silicon from fluosilicic acid
JPS62241872A (ja) *	1986-04-10	1987-10-22	黒崎窯業株式会社	反応焼結Ｓｉ↓３Ｎ↓４−ＳｉＣ複合体の製造方法
DE3629231A1 (de) *	1986-08-28	1988-03-03	Heliotronic Gmbh	Verfahren zum aufschmelzen von in einen schmelztiegel chargiertem siliciumpulver und schmelztiegel zur durchfuehrung des verfahrens
DE3639335A1 (de) *	1986-11-18	1988-05-26	Bayer Ag	Gegenueber metall- und salzschmelzen resistente werkstoffe, ihre herstellung und deren verwendung
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AU2001275064A1 (en) *	2001-05-31	2002-10-15	Xiaodi Huang	Method for direct metal making by microwave energy
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DE10217946A1 (de)	2002-04-22	2003-11-13	Heraeus Quarzglas	Quarzglastiegel und Verfahren zur Herstellung desselben
NO317080B1 (no)	2002-08-15	2004-08-02	Crusin As	Silisiumnitriddigler som er bestandige mot silisiumsmelter og fremgangsmate for fremstilling av slike digler
WO2004035472A1 (ja) *	2002-09-12	2004-04-29	Takayuki Shimamune	高純度シリコンの製造方法及び装置
AU2003284253A1 (en) *	2002-10-18	2004-05-04	Evergreen Solar, Inc.	Method and apparatus for crystal growth
UA81278C2 (en)	2002-12-06	2007-12-25		Vessel for holding a silicon and method for its making
US20050022743A1 (en) *	2003-07-31	2005-02-03	Semiconductor Energy Laboratory Co., Ltd.	Evaporation container and vapor deposition apparatus
MXPA06012509A (es)	2004-04-29	2007-01-31	Vesuvius Crucible Co	Crisol para la cristalizacion de silicio.
KR100573473B1 (ko) *	2004-05-10	2006-04-24	주식회사 실트론	실리콘 웨이퍼 및 그 제조방법
US7540919B2 (en) *	2005-04-01	2009-06-02	Gt Solar Incorporated	Solidification of crystalline silicon from reusable crucible molds
EP1739209A1 (de)	2005-07-01	2007-01-03	Vesuvius Crucible Company	Tiegel zur Kristallisierung von Silicium
TWI400369B (zh)	2005-10-06	2013-07-01	Vesuvius Crucible Co	用於矽結晶的坩堝及其製造方法

2006
- 2006-01-12 EP EP06447007A patent/EP1811064A1/de not_active Withdrawn
2007
- 2007-01-11 TW TW096101077A patent/TWI395841B/zh not_active IP Right Cessation
- 2007-01-12 AT AT07702727T patent/ATE480650T1/de active
- 2007-01-12 DE DE602007009043T patent/DE602007009043D1/de active Active
- 2007-01-12 CA CA2634199A patent/CA2634199C/en not_active Expired - Fee Related
- 2007-01-12 UA UAA200809060A patent/UA89717C2/ru unknown
- 2007-01-12 ES ES07702727T patent/ES2349158T3/es active Active
- 2007-01-12 KR KR1020087016906A patent/KR101212916B1/ko not_active Expired - Fee Related
- 2007-01-12 SI SI200730372T patent/SI1979512T1/sl unknown
- 2007-01-12 WO PCT/EP2007/000254 patent/WO2007080120A1/en not_active Ceased
- 2007-01-12 DK DK07702727.4T patent/DK1979512T3/da active
- 2007-01-12 RU RU2008132975/05A patent/RU2423558C2/ru not_active IP Right Cessation
- 2007-01-12 EP EP07702727A patent/EP1979512B1/de not_active Not-in-force
- 2007-01-12 AU AU2007204406A patent/AU2007204406B2/en not_active Ceased
- 2007-01-12 BR BRPI0706222-2A patent/BRPI0706222A2/pt not_active Application Discontinuation
- 2007-01-12 US US12/159,865 patent/US7833490B2/en not_active Expired - Fee Related
- 2007-01-12 JP JP2008549835A patent/JP5400392B2/ja not_active Expired - Fee Related
- 2007-01-12 PT PT07702727T patent/PT1979512E/pt unknown
- 2007-01-12 CN CNA2007800030630A patent/CN101370968A/zh active Pending
- 2007-01-12 ZA ZA200805509A patent/ZA200805509B/xx unknown
2008
- 2008-08-11 NO NO20083468A patent/NO20083468L/no not_active Application Discontinuation

Also Published As

Publication number	Publication date
JP5400392B2 (ja)	2014-01-29
EP1979512B1 (de)	2010-09-08
BRPI0706222A2 (pt)	2011-03-22
RU2423558C2 (ru)	2011-07-10
NO20083468L (no)	2008-08-11
KR20080082978A (ko)	2008-09-12
DK1979512T3 (da)	2011-01-17
JP2009523115A (ja)	2009-06-18
SI1979512T1 (sl)	2010-11-30
EP1811064A1 (de)	2007-07-25
WO2007080120A1 (en)	2007-07-19
TWI395841B (zh)	2013-05-11
ZA200805509B (en)	2009-12-30
CA2634199A1 (en)	2007-07-19
UA89717C2 (ru)	2010-02-25
TW200738919A (en)	2007-10-16
RU2008132975A (ru)	2010-02-20
PT1979512E (pt)	2010-11-09
EP1979512A1 (de)	2008-10-15
CA2634199C (en)	2013-09-24
US20080292524A1 (en)	2008-11-27
DE602007009043D1 (de)	2010-10-21
US7833490B2 (en)	2010-11-16
AU2007204406B2 (en)	2012-02-16
ES2349158T3 (es)	2010-12-28
AU2007204406A1 (en)	2007-07-19
KR101212916B1 (ko)	2012-12-14
CN101370968A (zh)	2009-02-18

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2011-01-15

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