ATE482466T1 - Reflektierender fotomaskenrohling, reflektierende fotomaske und verfahren zur herstellung von halbleiterbauelementen unter verwendung dieser - Google Patents

Reflektierender fotomaskenrohling, reflektierende fotomaske und verfahren zur herstellung von halbleiterbauelementen unter verwendung dieser

Info

Publication number
ATE482466T1
ATE482466T1 AT05814171T AT05814171T ATE482466T1 AT E482466 T1 ATE482466 T1 AT E482466T1 AT 05814171 T AT05814171 T AT 05814171T AT 05814171 T AT05814171 T AT 05814171T AT E482466 T1 ATE482466 T1 AT E482466T1
Authority
AT
Austria
Prior art keywords
reflective photomask
light absorption
same
semiconductor components
producing semiconductor
Prior art date
Application number
AT05814171T
Other languages
English (en)
Inventor
Koichiro Kanayama
Tadashi Matsuo
Yasushi Nishiyama
Original Assignee
Toppan Printing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toppan Printing Co Ltd filed Critical Toppan Printing Co Ltd
Application granted granted Critical
Publication of ATE482466T1 publication Critical patent/ATE482466T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/76—Patterning of masks by imaging
    • G03F1/78—Patterning of masks by imaging by charged particle beam [CPB], e.g. electron beam patterning of masks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • G03F7/2063—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam for the production of exposure masks or reticles
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31551—Of polyamidoester [polyurethane, polyisocyanate, polycarbamate, etc.]
    • Y10T428/31616—Next to polyester [e.g., alkyd]

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Mathematical Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Led Devices (AREA)
AT05814171T 2004-12-10 2005-12-06 Reflektierender fotomaskenrohling, reflektierende fotomaske und verfahren zur herstellung von halbleiterbauelementen unter verwendung dieser ATE482466T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004358736 2004-12-10
JP2005273487 2005-09-21
PCT/JP2005/022375 WO2006062099A1 (ja) 2004-12-10 2005-12-06 反射型フォトマスクブランク、反射型フォトマスク、及びこれを用いた半導体装置の製造方法

Publications (1)

Publication Number Publication Date
ATE482466T1 true ATE482466T1 (de) 2010-10-15

Family

ID=36577926

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05814171T ATE482466T1 (de) 2004-12-10 2005-12-06 Reflektierender fotomaskenrohling, reflektierende fotomaske und verfahren zur herstellung von halbleiterbauelementen unter verwendung dieser

Country Status (8)

Country Link
US (1) US7838177B2 (de)
EP (1) EP1833080B1 (de)
JP (1) JP5003159B2 (de)
KR (1) KR100906026B1 (de)
AT (1) ATE482466T1 (de)
DE (1) DE602005023779D1 (de)
TW (1) TWI443447B (de)
WO (1) WO2006062099A1 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5256569B2 (ja) * 2005-02-15 2013-08-07 凸版印刷株式会社 極端紫外線露光用マスク、マスクブランク、露光方法及びマスクブランクの製造方法
US7771895B2 (en) * 2006-09-15 2010-08-10 Applied Materials, Inc. Method of etching extreme ultraviolet light (EUV) photomasks
JP2008078551A (ja) * 2006-09-25 2008-04-03 Toppan Printing Co Ltd 反射型フォトマスクブランク及び反射型フォトマスク並びに半導体装置の製造方法
JP5018212B2 (ja) * 2007-04-26 2012-09-05 凸版印刷株式会社 反射型フォトマスクブランク及び反射型フォトマスク並びに半導体装置の製造方法
DE112009000965B4 (de) * 2008-05-09 2020-08-20 Hoya Corp. Reflektive Maske und Verfahren zum Herstellen einer reflektiven Maske
WO2010113700A1 (ja) * 2009-04-02 2010-10-07 凸版印刷株式会社 反射型フォトマスクおよび反射型フォトマスクブランク
US20110159411A1 (en) * 2009-12-30 2011-06-30 Bennett Olson Phase-shift photomask and patterning method
JP5921953B2 (ja) * 2012-03-28 2016-05-24 芝浦メカトロニクス株式会社 反射型マスクの製造方法、および反射型マスクの製造装置
US20140170533A1 (en) * 2012-12-19 2014-06-19 Sematech, Inc. Extreme ultraviolet lithography (euvl) alternating phase shift mask
DE102014216121A1 (de) 2014-08-13 2016-02-18 Carl Zeiss Smt Gmbh Maske für die EUV-Lithographie, EUV-Lithographieanlage und Verfahren zum Bestimmen eines durch DUV-Strahlung hervorgerufenen Kontrastanteils
DE102015108569B4 (de) 2015-05-29 2020-10-08 Advanced Mask Technology Center Gmbh & Co. Kg Reflektierende Fotomaske und Reflexionstyp-Maskenrohling
KR102617017B1 (ko) * 2017-08-10 2023-12-26 에이지씨 가부시키가이샤 반사형 마스크 블랭크 및 반사형 마스크
JP7006078B2 (ja) * 2017-08-10 2022-01-24 Ａｇｃ株式会社 反射型マスクブランク、および反射型マスク
JP7447812B2 (ja) * 2019-01-21 2024-03-12 Ａｇｃ株式会社 反射型マスクブランク、反射型マスク、および反射型マスクブランクの製造方法
JP6919699B2 (ja) * 2019-11-28 2021-08-18 凸版印刷株式会社 反射型フォトマスクブランク及び反射型フォトマスク
EP3842792A1 (de) * 2019-12-26 2021-06-30 Dukane IAS, LLC Verfahren zur messung der spektralen absorption von objekten
JP7226384B2 (ja) 2020-04-10 2023-02-21 信越化学工業株式会社 反射型マスクブランク、その製造方法及び反射型マスク
KR102898054B1 (ko) * 2020-04-14 2025-12-10 삼성전자주식회사 극자외선 리소그래피용 위상 반전 마스크
JP7590915B2 (ja) * 2021-04-30 2024-11-27 信越化学工業株式会社 反射型マスクブランク及び反射型マスクの製造方法
US20230314927A1 (en) * 2022-04-05 2023-10-05 Taiwan Semiconductor Manufacturing Company, Ltd. Euv photo masks and manufacturing method thereof
JP7838421B2 (ja) * 2022-07-14 2026-04-01 Ａｇｃ株式会社 反射型マスクブランク、反射型マスク、反射型マスクの製造方法
WO2024034439A1 (ja) * 2022-08-09 2024-02-15 Ａｇｃ株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク及びその製造方法、並びに、ｅｕｖリソグラフィ用反射型マスク及びその製造方法
JP2026032651A (ja) * 2024-08-14 2026-02-27 信越化学工業株式会社 反射型マスクブランク

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1498936A (en) * 1914-10-31 1924-06-24 Walter F Stimpson Scale
JPH10198023A (ja) * 1997-01-09 1998-07-31 Nec Corp Ｘ線露光マスク及びその製造方法
JP4397496B2 (ja) * 2000-02-25 2010-01-13 Ｏｋｉセミコンダクタ株式会社 反射型露光マスクおよびｅｕｖ露光装置
JP2002246299A (ja) * 2001-02-20 2002-08-30 Oki Electric Ind Co Ltd 反射型露光マスク、反射型露光マスクの製造方法、及び半導体素子
JP4158960B2 (ja) * 2002-02-25 2008-10-01 Ｈｏｙａ株式会社 露光用反射型マスクブランク及び露光用反射型マスク
JP3806702B2 (ja) * 2002-04-11 2006-08-09 Ｈｏｙａ株式会社 反射型マスクブランクス及び反射型マスク及びそれらの製造方法並びに半導体の製造方法
US7390596B2 (en) * 2002-04-11 2008-06-24 Hoya Corporation Reflection type mask blank and reflection type mask and production methods for them
JP4212025B2 (ja) * 2002-07-04 2009-01-21 Ｈｏｙａ株式会社 反射型マスクブランクス及び反射型マスク並びに反射型マスクの製造方法
JP4529359B2 (ja) * 2003-02-27 2010-08-25 凸版印刷株式会社 極限紫外線露光用マスク及びブランク並びにパターン転写方法
US7026076B2 (en) * 2003-03-03 2006-04-11 Freescale Semiconductor, Inc. Method of patterning photoresist on a wafer using a reflective mask with a multi-layer ARC

Also Published As

Publication number Publication date
EP1833080A1 (de) 2007-09-12
US20070238033A1 (en) 2007-10-11
TWI443447B (zh) 2014-07-01
EP1833080A4 (de) 2009-03-18
JPWO2006062099A1 (ja) 2008-06-12
TW200632543A (en) 2006-09-16
EP1833080B1 (de) 2010-09-22
DE602005023779D1 (de) 2010-11-04
US7838177B2 (en) 2010-11-23
KR20070085829A (ko) 2007-08-27
KR100906026B1 (ko) 2009-07-02
WO2006062099A1 (ja) 2006-06-15
JP5003159B2 (ja) 2012-08-15

Similar Documents

Publication Publication Date Title
DE602005023779D1 (de) Reflektierender fotomaskenrohling, reflektierende fotomaske und verfahren zur herstellung von halbleiterbauelementen unter verwendung dieser
US20070103769A1 (en) Optical element having antireflection film, and exposure apparatus
EP1498936A4 (de) Maskenrohling des reflexionstyps und maske des reflexionstyps und herstellungsverfahren dafür
EP2302452A3 (de) Fotomaskenrohling und Fotomaske
SG10201804507PA (en) Photomask Blank and Photomask
EP1152263A4 (de) Optische vorrichtung mit dünnen vielschichtsystem und deren verwendung zur ausrichtung
JP2009099931A (ja) 反射型フォトマスクブランク及びその製造方法、反射型フォトマスク及びその製造方法並びに半導体素子の製造方法
US20110075238A1 (en) Method and System for Increasing Alignment Target Contrast
TW200715044A (en) Photomask blank, photomask and fabrication method thereof
ATE533084T1 (de) Stubstrat mit reflektierenden schichten geeignet zur herstellung von reflexionsmaskenrohlingen für die euv-lithographie
US8681313B2 (en) Diffraction elements for alignment targets
EP1387189A3 (de) Mindestens zweischichtiges Substrat für die Mikrolithographie
US20090042110A1 (en) Reflection type photomask blank, manufacturing method thereof, reflection type photomask, and manufacturing method of semiconductor device
TW200604748A (en) Laminated resist used for immersion lithgraphy
WO2005010612A3 (en) Defect inspection of extreme ultraviolet lithography masks and the like
WO2005050316A3 (en) Method involving a mask or a reticle
JP2007335908A5 (de)
JP2006228766A (ja) 極端紫外線露光用マスク、マスクブランク、及び露光方法
US20150212434A1 (en) Monolithic euv transparent membrane and support mesh and method of manufacturing same
EP1176466A4 (de) Halbtonphasenschiebermaske sowie vorstufen einer solchen maske
JP4520429B2 (ja) 位置合わせ装置への２次元フォトニック結晶の応用
KR20090032876A (ko) 리소그래피 장치 및 이를 이용한 반도체 소자의 형성 방법
CN101539725A (zh) 用于光刻设备中的晶片粗对准的方法
US20040142256A1 (en) Alternate side lithographic substrate imaging
TW200514135A (en) Photomask having an internal substantially transparent etch stop layer

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties