ATE553403T1 - SPEKTRALER REINIGUNGSFILTER FÜR EINEN MEHRSCHICHTIGEN SPIEGEL, LITHOGRAFISCHE VORRICHTUNG MIT EINEM DERARTIGEN MEHRSCHICHTIGEN SPIEGEL, VERFAHREN ZUR VERGRÖßERUNG DES VERHÄLTNISSES VON ERWÜNSCHTER UND UNERWÜNSCHTER STRAHLUNG SOWIE GERÄTEHERSTELLUNGSVERFAHREN - Google Patents
SPEKTRALER REINIGUNGSFILTER FÜR EINEN MEHRSCHICHTIGEN SPIEGEL, LITHOGRAFISCHE VORRICHTUNG MIT EINEM DERARTIGEN MEHRSCHICHTIGEN SPIEGEL, VERFAHREN ZUR VERGRÖßERUNG DES VERHÄLTNISSES VON ERWÜNSCHTER UND UNERWÜNSCHTER STRAHLUNG SOWIE GERÄTEHERSTELLUNGSVERFAHRENInfo
- Publication number
- ATE553403T1 ATE553403T1 AT06113136T AT06113136T ATE553403T1 AT E553403 T1 ATE553403 T1 AT E553403T1 AT 06113136 T AT06113136 T AT 06113136T AT 06113136 T AT06113136 T AT 06113136T AT E553403 T1 ATE553403 T1 AT E553403T1
- Authority
- AT
- Austria
- Prior art keywords
- layer
- layer mirror
- spectral purity
- mirror
- purity enhancement
- Prior art date
Links
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70308—Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/0816—Multilayer mirrors, i.e. having two or more reflecting layers
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/0891—Ultraviolet [UV] mirrors
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/28—Interference filters
- G02B5/283—Interference filters designed for the ultraviolet
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70575—Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
- G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
- G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
- G21K1/062—Devices having a multilayer structure
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K2201/00—Arrangements for handling radiation or particles
- G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
- G21K2201/067—Construction details
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- High Energy & Nuclear Physics (AREA)
- Public Health (AREA)
- General Engineering & Computer Science (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Health & Medical Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Theoretical Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mathematical Physics (AREA)
- Plasma & Fusion (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Optical Elements Other Than Lenses (AREA)
- Optical Filters (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/115,406 US7336416B2 (en) | 2005-04-27 | 2005-04-27 | Spectral purity filter for multi-layer mirror, lithographic apparatus including such multi-layer mirror, method for enlarging the ratio of desired radiation and undesired radiation, and device manufacturing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE553403T1 true ATE553403T1 (de) | 2012-04-15 |
Family
ID=36764463
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT06113136T ATE553403T1 (de) | 2005-04-27 | 2006-04-26 | SPEKTRALER REINIGUNGSFILTER FÜR EINEN MEHRSCHICHTIGEN SPIEGEL, LITHOGRAFISCHE VORRICHTUNG MIT EINEM DERARTIGEN MEHRSCHICHTIGEN SPIEGEL, VERFAHREN ZUR VERGRÖßERUNG DES VERHÄLTNISSES VON ERWÜNSCHTER UND UNERWÜNSCHTER STRAHLUNG SOWIE GERÄTEHERSTELLUNGSVERFAHREN |
Country Status (8)
| Country | Link |
|---|---|
| US (5) | US7336416B2 (de) |
| EP (3) | EP1717609B1 (de) |
| JP (2) | JP2006310793A (de) |
| KR (1) | KR100779699B1 (de) |
| CN (1) | CN100559217C (de) |
| AT (1) | ATE553403T1 (de) |
| SG (1) | SG126906A1 (de) |
| TW (1) | TWI302992B (de) |
Families Citing this family (84)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7843632B2 (en) * | 2006-08-16 | 2010-11-30 | Cymer, Inc. | EUV optics |
| DE10309084A1 (de) | 2003-03-03 | 2004-09-16 | Carl Zeiss Smt Ag | Reflektives optisches Element und EUV-Lithographiegerät |
| JP4532991B2 (ja) * | 2004-05-26 | 2010-08-25 | キヤノン株式会社 | 投影光学系、露光装置及びデバイス製造方法 |
| US7336416B2 (en) * | 2005-04-27 | 2008-02-26 | Asml Netherlands B.V. | Spectral purity filter for multi-layer mirror, lithographic apparatus including such multi-layer mirror, method for enlarging the ratio of desired radiation and undesired radiation, and device manufacturing method |
| US7518797B2 (en) * | 2005-12-02 | 2009-04-14 | Carl Zeiss Smt Ag | Microlithographic exposure apparatus |
| US7329876B2 (en) * | 2006-01-26 | 2008-02-12 | Xtreme Technologies Gmbh | Narrow-band transmission filter for EUV radiation |
| US7736820B2 (en) * | 2006-05-05 | 2010-06-15 | Asml Netherlands B.V. | Anti-reflection coating for an EUV mask |
| US7666555B2 (en) * | 2006-12-29 | 2010-02-23 | Intel Corporation | Pellicle, methods of fabrication and methods of use for extreme ultraviolet lithography |
| EP2109134B1 (de) * | 2007-01-25 | 2017-03-01 | Nikon Corporation | Optisches element, belichtungsvorrichtung mit dem optischen element und bauelementeherstellungsverfahren |
| US7965378B2 (en) * | 2007-02-20 | 2011-06-21 | Asml Holding N.V | Optical system and method for illumination of reflective spatial light modulators in maskless lithography |
| US20080266651A1 (en) * | 2007-04-24 | 2008-10-30 | Katsuhiko Murakami | Optical apparatus, multilayer-film reflective mirror, exposure apparatus, and device |
| DE102007051671A1 (de) | 2007-10-26 | 2009-05-07 | Carl Zeiss Smt Ag | Abbildende Optik sowie Projektionsbelichtungsanlage für die Mikrolithographie mit einer derartigen abbildenden Optik |
| US20090250637A1 (en) * | 2008-04-02 | 2009-10-08 | Cymer, Inc. | System and methods for filtering out-of-band radiation in EUV exposure tools |
| TWI420134B (zh) * | 2008-05-09 | 2013-12-21 | Hon Hai Prec Ind Co Ltd | 光學鏡片及其鍍膜方法 |
| CN102047183B (zh) * | 2008-06-04 | 2013-12-18 | Asml荷兰有限公司 | 多层反射镜和光刻设备 |
| WO2009154238A1 (ja) * | 2008-06-19 | 2009-12-23 | 旭硝子株式会社 | Euvリソグラフィ用反射型マスクブランク |
| NL2002968A1 (nl) * | 2008-06-30 | 2009-12-31 | Asml Netherlands Bv | Optical element, lithographic apparatus including such an optical element, device manufacturing method, and device manufactured thereby. |
| NL2003158A1 (nl) | 2008-07-11 | 2010-01-12 | Asml Netherlands Bv | Spectral purity filters for use in a lithographic apparatus. |
| WO2010017890A1 (en) * | 2008-08-14 | 2010-02-18 | Asml Netherlands B.V. | Radiation source, lithographic apparatus, and device manufacturing method |
| NL2003299A (en) | 2008-08-28 | 2010-03-11 | Asml Netherlands Bv | Spectral purity filter and lithographic apparatus. |
| JP5528449B2 (ja) * | 2008-08-29 | 2014-06-25 | エーエスエムエル ネザーランズ ビー.ブイ. | スペクトル純度フィルタ、このスペクトル純度フィルタを備えたリソグラフィ装置、およびデバイス製造方法 |
| JP5533656B2 (ja) * | 2008-09-18 | 2014-06-25 | 株式会社ニコン | 結像光学系、露光装置及び電子デバイスの製造方法 |
| IT1395244B1 (it) * | 2008-12-17 | 2012-09-05 | St Microelectronics Srl | Procedimento di fabbricazione di un dispositivo emettitore di radiazione ottica a cavita' risonante |
| KR101694283B1 (ko) | 2009-02-13 | 2017-01-09 | 에이에스엠엘 네델란즈 비.브이. | 다층 거울 및 리소그래피 장치 |
| DE102009032779A1 (de) * | 2009-07-10 | 2011-01-13 | Carl Zeiss Smt Ag | Spiegel für den EUV-Wellenlängenbereich, Projektionsobjektiv für die Mikrolithographie mit einem solchen Spiegel und Projektionsbelichtungsanlage für die Mikrolithographie mit einem solchen Projektionsobjektiv |
| US8519325B1 (en) * | 2009-08-24 | 2013-08-27 | Zhenyu Lu | Optical radiation concentrator |
| DE102009045170A1 (de) * | 2009-09-30 | 2011-04-07 | Carl Zeiss Smt Gmbh | Reflektives optisches Element und Verfahren zum Betrieb einer EUV-Lithographievorrichtung |
| DE102009044462A1 (de) | 2009-11-06 | 2011-01-05 | Carl Zeiss Smt Ag | Optisches Element, Beleuchtungssystem und Projektionsbelichtungsanlage |
| TW201131615A (en) * | 2009-12-09 | 2011-09-16 | Asahi Glass Co Ltd | Multilayer mirror for euv lithography and process for producing same |
| US20130010275A1 (en) * | 2010-03-24 | 2013-01-10 | Asml Netherlands Bv | Lithographic apparatus and spectral purity filter |
| US9395630B2 (en) * | 2010-06-25 | 2016-07-19 | Asml Netherlands B.V. | Lithographic apparatus and method |
| DE102010036955A1 (de) * | 2010-08-12 | 2012-02-16 | Asml Netherlands B.V. | Reflektives optisches Element und optisches System für die EUV-Lithographie |
| EP2434345B1 (de) * | 2010-09-27 | 2013-07-03 | Imec | Verfahren und System zur Beurteilung der Flachheit von EUV Masken |
| DE102010062597A1 (de) | 2010-12-08 | 2012-06-14 | Carl Zeiss Smt Gmbh | Reflektives optisches Abbildungssystem |
| CN102621815B (zh) * | 2011-01-26 | 2016-12-21 | Asml荷兰有限公司 | 用于光刻设备的反射光学部件及器件制造方法 |
| WO2012104680A1 (en) * | 2011-01-31 | 2012-08-09 | Indian Institute Of Science | Apparatus and methods for sensing or imaging using stacked thin films |
| US9594306B2 (en) | 2011-03-04 | 2017-03-14 | Asml Netherlands B.V. | Lithographic apparatus, spectral purity filter and device manufacturing method |
| US8916831B2 (en) | 2011-03-16 | 2014-12-23 | Kla-Tencor Corporation | EUV actinic reticle inspection system using imaging sensor with thin film spectral purity filter coating |
| JP2012222349A (ja) * | 2011-04-05 | 2012-11-12 | Asml Netherlands Bv | 多層ミラーおよびリソグラフィ装置 |
| DE102011076011A1 (de) * | 2011-05-18 | 2012-11-22 | Carl Zeiss Smt Gmbh | Reflektives optisches Element und optisches System für die EUV-Lithographie |
| US9448492B2 (en) * | 2011-06-15 | 2016-09-20 | Asml Netherlands B.V. | Multilayer mirror, method of producing a multilayer mirror and lithographic apparatus |
| US8761346B2 (en) * | 2011-07-29 | 2014-06-24 | General Electric Company | Multilayer total internal reflection optic devices and methods of making and using the same |
| DE102011083462A1 (de) | 2011-09-27 | 2013-03-28 | Carl Zeiss Smt Gmbh | EUV-Spiegel mit einer Oxynitrid-Deckschicht mit stabiler Zusammensetzung |
| DE102011083461A1 (de) | 2011-09-27 | 2013-03-28 | Carl Zeiss Smt Gmbh | Verfahren zum Erzeugen einer Deckschicht aus Siliziumoxid an einem EUV-Spiegel |
| US9927094B2 (en) * | 2012-01-17 | 2018-03-27 | Kla-Tencor Corporation | Plasma cell for providing VUV filtering in a laser-sustained plasma light source |
| DE102012207141A1 (de) * | 2012-04-27 | 2013-10-31 | Carl Zeiss Laser Optics Gmbh | Verfahren zur Reparatur von optischen Elementen sowie optisches Element |
| CN102681054B (zh) * | 2012-05-08 | 2014-03-19 | 太原理工大学 | 基于光子晶体的全可见光波段全角度反射器 |
| DE102012105369B4 (de) * | 2012-06-20 | 2015-07-16 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Multilayer-Spiegel für den EUV-Spektralbereich |
| US10185234B2 (en) * | 2012-10-04 | 2019-01-22 | Asml Netherlands B.V. | Harsh environment optical element protection |
| US9151881B2 (en) | 2012-11-12 | 2015-10-06 | Kla-Tencor Corporation | Phase grating for mask inspection system |
| DE102013203746A1 (de) * | 2013-03-05 | 2013-12-19 | Carl Zeiss Smt Gmbh | Reflektives optisches Element für die EUV-Lithographie |
| US9417515B2 (en) * | 2013-03-14 | 2016-08-16 | Applied Materials, Inc. | Ultra-smooth layer ultraviolet lithography mirrors and blanks, and manufacturing and lithography systems therefor |
| US9612521B2 (en) * | 2013-03-12 | 2017-04-04 | Applied Materials, Inc. | Amorphous layer extreme ultraviolet lithography blank, and manufacturing and lithography systems therefor |
| US20140272684A1 (en) | 2013-03-12 | 2014-09-18 | Applied Materials, Inc. | Extreme ultraviolet lithography mask blank manufacturing system and method of operation therefor |
| US9354508B2 (en) * | 2013-03-12 | 2016-05-31 | Applied Materials, Inc. | Planarized extreme ultraviolet lithography blank, and manufacturing and lithography systems therefor |
| US9632411B2 (en) | 2013-03-14 | 2017-04-25 | Applied Materials, Inc. | Vapor deposition deposited photoresist, and manufacturing and lithography systems therefor |
| WO2015028042A1 (en) * | 2013-08-26 | 2015-03-05 | Teledyne Dalsa B.V. | A radiation detector and a method thereof |
| JP6389896B2 (ja) | 2013-09-23 | 2018-09-12 | カール・ツァイス・エスエムティー・ゲーエムベーハー | 多層ミラー |
| DE102013221550A1 (de) * | 2013-10-23 | 2015-04-23 | Carl Zeiss Smt Gmbh | Vielschichtstruktur für EUV-Spiegel |
| DE102013222330A1 (de) | 2013-11-04 | 2015-05-07 | Carl Zeiss Smt Gmbh | Spiegel, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage |
| US9529249B2 (en) * | 2013-11-15 | 2016-12-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Extreme ultraviolet lithography process and mask |
| GB201400264D0 (en) * | 2014-01-08 | 2014-02-26 | Element Six Ltd | Synthetic diamond optical mirrors |
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| CN105446088A (zh) * | 2015-12-21 | 2016-03-30 | 中国科学院长春光学精密机械与物理研究所 | 具有微结构和光谱纯化层的光源收集镜 |
| FR3059434B1 (fr) * | 2016-11-29 | 2019-05-17 | Centre National De La Recherche Scientifique - Cnrs | Composant de selection spectrale pour radiations xuv |
| US10468149B2 (en) * | 2017-02-03 | 2019-11-05 | Globalfoundries Inc. | Extreme ultraviolet mirrors and masks with improved reflectivity |
| CN108680981B (zh) * | 2018-05-16 | 2020-12-01 | 德州尧鼎光电科技有限公司 | 一种深紫外窄带滤光片制备方法 |
| CN109254338A (zh) * | 2018-10-26 | 2019-01-22 | 中国科学院长春光学精密机械与物理研究所 | 一种19.5nm多层膜反射镜 |
| KR102263833B1 (ko) * | 2019-09-09 | 2021-06-11 | 주식회사 와이즈가드 | 기능성 산화물층을 포함하는 광기능성 패턴 구조물 |
| TW202119136A (zh) * | 2019-10-18 | 2021-05-16 | 美商應用材料股份有限公司 | 多層反射器及其製造和圖案化之方法 |
| US11448970B2 (en) * | 2020-09-09 | 2022-09-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Lithography system and methods |
| CN112820439B (zh) * | 2020-12-31 | 2023-01-06 | 苏州闻道电子科技有限公司 | 一种用于x射线与软x射线波段的滤片及其制备方法 |
| JP7590915B2 (ja) * | 2021-04-30 | 2024-11-27 | 信越化学工業株式会社 | 反射型マスクブランク及び反射型マスクの製造方法 |
| CN113776662B (zh) * | 2021-09-02 | 2022-12-16 | 同济大学 | 超高真空环境远紫外-极紫外光斩波周期调制分光装置 |
| CN115132084B (zh) * | 2022-07-01 | 2023-09-26 | 武汉华星光电半导体显示技术有限公司 | 显示装置 |
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| CN118604920B (zh) * | 2024-05-22 | 2025-04-01 | 昆山杜克大学 | 热辐射抑制层及其制备方法和热管理器件 |
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| US5958605A (en) | 1997-11-10 | 1999-09-28 | Regents Of The University Of California | Passivating overcoat bilayer for multilayer reflective coatings for extreme ultraviolet lithography |
| NL1008352C2 (nl) * | 1998-02-19 | 1999-08-20 | Stichting Tech Wetenschapp | Inrichting, geschikt voor extreem ultraviolet lithografie, omvattende een stralingsbron en een verwerkingsorgaan voor het verwerken van de van de stralingsbron afkomstige straling, alsmede een filter voor het onderdrukken van ongewenste atomaire en microscopische deeltjes welke door een stralingsbron zijn uitgezonden. |
| JPH11311704A (ja) * | 1998-02-26 | 1999-11-09 | Nikon Corp | 紫外光用ミラー |
| US6295164B1 (en) * | 1998-09-08 | 2001-09-25 | Nikon Corporation | Multi-layered mirror |
| US6229652B1 (en) * | 1998-11-25 | 2001-05-08 | The Regents Of The University Of California | High reflectance and low stress Mo2C/Be multilayers |
| US6228512B1 (en) * | 1999-05-26 | 2001-05-08 | The Regents Of The University Of California | MoRu/Be multilayers for extreme ultraviolet applications |
| TW561279B (en) * | 1999-07-02 | 2003-11-11 | Asml Netherlands Bv | Reflector for reflecting radiation in a desired wavelength range, lithographic projection apparatus containing the same and method for their preparation |
| FR2802311B1 (fr) * | 1999-12-08 | 2002-01-18 | Commissariat Energie Atomique | Dispositif de lithographie utilisant une source de rayonnement dans le domaine extreme ultraviolet et des miroirs multicouches a large bande spectrale dans ce domaine |
| TW573234B (en) * | 2000-11-07 | 2004-01-21 | Asml Netherlands Bv | Lithographic projection apparatus and integrated circuit device manufacturing method |
| US6576912B2 (en) * | 2001-01-03 | 2003-06-10 | Hugo M. Visser | Lithographic projection apparatus equipped with extreme ultraviolet window serving simultaneously as vacuum window |
| US6614505B2 (en) * | 2001-01-10 | 2003-09-02 | Asml Netherlands B.V. | Lithographic projection apparatus, device manufacturing method, and device manufactured thereby |
| US6644372B2 (en) * | 2001-03-22 | 2003-11-11 | Ren Judkins | Cordless blind |
| SG111143A1 (en) * | 2002-08-28 | 2005-05-30 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| US6825988B2 (en) * | 2002-09-04 | 2004-11-30 | Intel Corporation | Etched silicon diffraction gratings for use as EUV spectral purity filters |
| DE10258709A1 (de) | 2002-12-12 | 2004-07-01 | Carl Zeiss Smt Ag | Schutzsystem für reflektive optische Elemente, reflektives optisches Element und Verfahren zu deren Herstellung |
| WO2004104707A2 (de) | 2003-05-22 | 2004-12-02 | Philips Intellectual Property & Standards Gmbh | Verfahren und vorrichtung zum reinigen mindestens einer optischen komponente |
| US7193228B2 (en) * | 2004-03-10 | 2007-03-20 | Cymer, Inc. | EUV light source optical elements |
| US7336416B2 (en) * | 2005-04-27 | 2008-02-26 | Asml Netherlands B.V. | Spectral purity filter for multi-layer mirror, lithographic apparatus including such multi-layer mirror, method for enlarging the ratio of desired radiation and undesired radiation, and device manufacturing method |
| NO20100377A1 (no) * | 2010-03-16 | 2011-09-19 | Polewall As | Framgangsmåte for å rette en optisk mottaker mot en lyskilde og et apparat for utøvelse av framgangsmåten |
-
2005
- 2005-04-27 US US11/115,406 patent/US7336416B2/en not_active Expired - Lifetime
-
2006
- 2006-01-24 US US11/337,807 patent/US7463413B2/en not_active Expired - Lifetime
- 2006-03-13 JP JP2006067463A patent/JP2006310793A/ja active Pending
- 2006-04-14 TW TW095113523A patent/TWI302992B/zh not_active IP Right Cessation
- 2006-04-26 AT AT06113136T patent/ATE553403T1/de active
- 2006-04-26 CN CNB2006100799433A patent/CN100559217C/zh not_active Expired - Fee Related
- 2006-04-26 EP EP06113136A patent/EP1717609B1/de not_active Not-in-force
- 2006-04-26 SG SG200602823A patent/SG126906A1/en unknown
- 2006-04-26 EP EP10181598A patent/EP2261699B1/de not_active Not-in-force
- 2006-04-26 EP EP10181596A patent/EP2261698B1/de not_active Not-in-force
- 2006-04-27 KR KR1020060038353A patent/KR100779699B1/ko not_active Expired - Fee Related
-
2008
- 2008-08-28 US US12/230,384 patent/US7706057B2/en not_active Expired - Fee Related
-
2009
- 2009-06-19 JP JP2009146868A patent/JP5406602B2/ja not_active Expired - Fee Related
-
2010
- 2010-03-05 US US12/718,682 patent/US20100149512A1/en not_active Abandoned
-
2011
- 2011-02-16 US US13/028,795 patent/US8139200B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP1717609B1 (de) | 2012-04-11 |
| JP2009294659A (ja) | 2009-12-17 |
| EP2261699B1 (de) | 2013-03-27 |
| EP2261698B1 (de) | 2013-03-20 |
| CN1854771A (zh) | 2006-11-01 |
| JP2006310793A (ja) | 2006-11-09 |
| CN100559217C (zh) | 2009-11-11 |
| US8139200B2 (en) | 2012-03-20 |
| KR100779699B1 (ko) | 2007-11-26 |
| EP2261698A1 (de) | 2010-12-15 |
| US20080316595A1 (en) | 2008-12-25 |
| US7706057B2 (en) | 2010-04-27 |
| SG126906A1 (en) | 2006-11-29 |
| TWI302992B (en) | 2008-11-11 |
| US20060245058A1 (en) | 2006-11-02 |
| US7336416B2 (en) | 2008-02-26 |
| KR20060113519A (ko) | 2006-11-02 |
| JP5406602B2 (ja) | 2014-02-05 |
| TW200643481A (en) | 2006-12-16 |
| US20100149512A1 (en) | 2010-06-17 |
| EP2261699A1 (de) | 2010-12-15 |
| EP1717609A1 (de) | 2006-11-02 |
| US20060245057A1 (en) | 2006-11-02 |
| US7463413B2 (en) | 2008-12-09 |
| US20110134410A1 (en) | 2011-06-09 |
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