ATE483231T1 - Niederspannungsleseverstärker und verfahren - Google Patents

Niederspannungsleseverstärker und verfahren

Info

Publication number
ATE483231T1
ATE483231T1 AT04714679T AT04714679T ATE483231T1 AT E483231 T1 ATE483231 T1 AT E483231T1 AT 04714679 T AT04714679 T AT 04714679T AT 04714679 T AT04714679 T AT 04714679T AT E483231 T1 ATE483231 T1 AT E483231T1
Authority
AT
Austria
Prior art keywords
lines
sense
complementary
digit
sense amplifier
Prior art date
Application number
AT04714679T
Other languages
English (en)
Inventor
Donald Morgan
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Application granted granted Critical
Publication of ATE483231T1 publication Critical patent/ATE483231T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/065—Differential amplifiers of latching type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G11C11/4087—Address decoders, e.g. bit - or word line decoders; Multiple line decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/06—Address interface arrangements, e.g. address buffers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/10—Decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/06—Sense amplifier related aspects
    • G11C2207/065—Sense amplifier drivers

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
  • Radar Systems Or Details Thereof (AREA)
AT04714679T 2003-02-25 2004-02-25 Niederspannungsleseverstärker und verfahren ATE483231T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/374,376 US6950368B2 (en) 2003-02-25 2003-02-25 Low-voltage sense amplifier and method
PCT/US2004/005850 WO2004077659A2 (en) 2003-02-25 2004-02-25 Low-voltage sense amplifier and method

Publications (1)

Publication Number Publication Date
ATE483231T1 true ATE483231T1 (de) 2010-10-15

Family

ID=32868866

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04714679T ATE483231T1 (de) 2003-02-25 2004-02-25 Niederspannungsleseverstärker und verfahren

Country Status (9)

Country Link
US (2) US6950368B2 (de)
EP (1) EP1614118B1 (de)
JP (1) JP2006518910A (de)
KR (1) KR100865906B1 (de)
CN (1) CN1759448B (de)
AT (1) ATE483231T1 (de)
DE (1) DE602004029342D1 (de)
TW (1) TWI340539B (de)
WO (1) WO2004077659A2 (de)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100634384B1 (ko) * 2004-07-16 2006-10-16 삼성전자주식회사 액세스 데이터를 저장하는 회로를 구비한 반도체 메모리 장치
KR100772686B1 (ko) * 2004-10-30 2007-11-02 주식회사 하이닉스반도체 저전압용 반도체 메모리 장치
EP1727147B1 (de) * 2005-05-23 2011-07-13 STMicroelectronics (Crolles 2) SAS Leseverstärker für einen dynamischen Speicher
US7505341B2 (en) * 2006-05-17 2009-03-17 Micron Technology, Inc. Low voltage sense amplifier and sensing method
US7688635B2 (en) * 2006-07-14 2010-03-30 Micron Technology, Inc. Current sensing for Flash
US20090059686A1 (en) * 2007-09-04 2009-03-05 Chih-Ta Star Sung Sensing scheme for the semiconductor memory
US8422294B2 (en) * 2010-10-08 2013-04-16 Infineon Technologies Ag Symmetric, differential nonvolatile memory cell
US8451652B2 (en) * 2010-12-02 2013-05-28 Lsi Corporation Write assist static random access memory cell
FR2974666B1 (fr) * 2011-04-26 2013-05-17 Soitec Silicon On Insulator Amplificateur de detection differentiel sans transistor de precharge dedie
WO2014070852A1 (en) * 2012-10-31 2014-05-08 Marvell World Trade Ltd. Sram cells suitable for fin field-effect transistor (finfet) process
US9842631B2 (en) 2012-12-14 2017-12-12 Nvidia Corporation Mitigating external influences on long signal lines
US9087559B2 (en) * 2012-12-27 2015-07-21 Intel Corporation Memory sense amplifier voltage modulation
TWI505283B (zh) * 2013-01-25 2015-10-21 Nat Univ Tsing Hua 利用電容耦合實現動態參考電壓之感測放大器
WO2014151659A1 (en) * 2013-03-15 2014-09-25 Silicon Image, Inc. Method and apparatus for implementing wide data range and wide common-mode receivers
TWI556242B (zh) * 2014-10-08 2016-11-01 修平學校財團法人修平科技大學 單埠靜態隨機存取記憶體（八）
TWI556240B (zh) * 2015-05-08 2016-11-01 修平學校財團法人修平科技大學 ７ｔ雙埠靜態隨機存取記憶體（四）
TWI556239B (zh) * 2015-05-08 2016-11-01 修平學校財團法人修平科技大學 ７ｔ雙埠靜態隨機存取記憶體（三）
CN104979011B (zh) * 2015-07-10 2019-02-22 北京兆易创新科技股份有限公司 资料存储型闪存中优化读数据电路
US9911471B1 (en) 2017-02-14 2018-03-06 Micron Technology, Inc. Input buffer circuit
WO2018187370A1 (en) * 2017-04-04 2018-10-11 Artilux Corporation High-speed light sensing apparatus iii
US10236036B2 (en) * 2017-05-09 2019-03-19 Micron Technology, Inc. Sense amplifier signal boost
FR3076923A1 (fr) * 2018-01-16 2019-07-19 Stmicroelectronics (Rousset) Sas Procede et circuit d'authentification
US11875838B2 (en) * 2019-07-12 2024-01-16 Semiconductor Energy Laboratory Co., Ltd. Memory device, semiconductor device, and electronic device
FR3098949B1 (fr) 2019-07-15 2023-10-06 St Microelectronics Rousset Fonction à sens unique
US12563735B2 (en) * 2021-09-01 2026-02-24 Micron Technology, Inc. Electronic devices including vertical strings of memory cells, and related memory devices, systems and methods
US12218598B2 (en) * 2022-05-31 2025-02-04 Texas Instruments Incorporated Quasi-resonant isolated voltage converter
US12131771B2 (en) * 2022-06-02 2024-10-29 Micron Technology, Inc. Sense amplifier reference voltage through sense amplifier latch devices

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5755592A (en) * 1980-09-18 1982-04-02 Nec Corp Memory device
JP3519499B2 (ja) * 1995-05-11 2004-04-12 株式会社ルネサステクノロジ 相補差動増幅器およびそれを備える半導体メモリ装置
US5548231A (en) * 1995-06-02 1996-08-20 Translogic Technology, Inc. Serial differential pass gate logic design
US5936905A (en) * 1996-09-03 1999-08-10 Townsend And Townsend And Crew Llp Self adjusting delay circuit and method for compensating sense amplifier clock timing
US5889715A (en) * 1997-04-23 1999-03-30 Artisan Components, Inc. Voltage sense amplifier and methods for implementing the same
NO973319A (no) * 1997-07-18 1998-12-14 Petroleum Geo Services Asa Sammenleggbar dybdekontroller
KR100298443B1 (ko) * 1998-08-18 2001-08-07 김영환 센스앰프제어회로
JP3221428B2 (ja) * 1999-02-12 2001-10-22 日本電気株式会社 ラッチ型センスアンプ回路
US6031776A (en) * 1999-08-17 2000-02-29 United Microelectronics Corp. Sense amplifier circuit for a semiconductor memory device
US6141276A (en) * 1999-09-02 2000-10-31 Micron Technology, Inc. Apparatus and method for increasing test flexibility of a memory device

Also Published As

Publication number Publication date
WO2004077659A2 (en) 2004-09-10
EP1614118B1 (de) 2010-09-29
JP2006518910A (ja) 2006-08-17
US7019561B2 (en) 2006-03-28
US20050099872A1 (en) 2005-05-12
EP1614118A4 (de) 2007-11-28
EP1614118A2 (de) 2006-01-11
US6950368B2 (en) 2005-09-27
WO2004077659A3 (en) 2005-11-10
KR100865906B1 (ko) 2008-10-29
KR20050107458A (ko) 2005-11-11
TW200501554A (en) 2005-01-01
US20040165462A1 (en) 2004-08-26
CN1759448B (zh) 2010-05-12
TWI340539B (en) 2011-04-11
DE602004029342D1 (de) 2010-11-11
CN1759448A (zh) 2006-04-12

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Legal Events

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