ATE485627T1 - Elektronisches bauelement und verfahren zur herstellung - Google Patents

Elektronisches bauelement und verfahren zur herstellung

Info

Publication number
ATE485627T1
ATE485627T1 AT02755466T AT02755466T ATE485627T1 AT E485627 T1 ATE485627 T1 AT E485627T1 AT 02755466 T AT02755466 T AT 02755466T AT 02755466 T AT02755466 T AT 02755466T AT E485627 T1 ATE485627 T1 AT E485627T1
Authority
AT
Austria
Prior art keywords
production
inductor
electronic component
electrode
capacitor
Prior art date
Application number
AT02755466T
Other languages
English (en)
Inventor
Beek Jozef Van
Theodoor Rijks
Marion Matters-Kammerer
Esch Henricus Van
Original Assignee
Nxp Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nxp Bv filed Critical Nxp Bv
Application granted granted Critical
Publication of ATE485627T1 publication Critical patent/ATE485627T1/de

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
    • G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
    • G01R27/26—Measuring inductance or capacitance; Measuring quality factor, e.g. by using the resonance method; Measuring loss factor; Measuring dielectric constants ; Measuring impedance or related variables
    • G01R27/2617—Measuring dielectric properties, e.g. constants
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
    • G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
    • G01R27/26—Measuring inductance or capacitance; Measuring quality factor, e.g. by using the resonance method; Measuring loss factor; Measuring dielectric constants ; Measuring impedance or related variables
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type
    • H01F17/0006—Printed inductances
    • H01F17/0013—Printed inductances with stacked layers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01—Frequency selective two-port networks
    • H03H7/0115—Frequency selective two-port networks comprising only inductors and capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type
    • H01F17/0006—Printed inductances
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00—Details of transformers or inductances, in general
    • H01F27/28—Coils; Windings; Conductive connections
    • H01F27/2804—Printed windings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/20—Inductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Coils Or Transformers For Communication (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Filters And Equalizers (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Ceramic Capacitors (AREA)
  • Manufacturing Cores, Coils, And Magnets (AREA)
AT02755466T 2001-08-14 2002-08-14 Elektronisches bauelement und verfahren zur herstellung ATE485627T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP01203071 2001-08-14
PCT/IB2002/003230 WO2003017479A2 (en) 2001-08-14 2002-08-14 Electronic device and method of testing and of manufacturing

Publications (1)

Publication Number Publication Date
ATE485627T1 true ATE485627T1 (de) 2010-11-15

Family

ID=8180787

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02755466T ATE485627T1 (de) 2001-08-14 2002-08-14 Elektronisches bauelement und verfahren zur herstellung

Country Status (7)

Country Link
US (1) US7176550B2 (de)
EP (1) EP1436893B1 (de)
JP (1) JP4358624B2 (de)
CN (1) CN100407573C (de)
AT (1) ATE485627T1 (de)
DE (1) DE60238069D1 (de)
WO (1) WO2003017479A2 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE60238069D1 (de) 2001-08-14 2010-12-02 Nxp Bv Elektronisches bauelement und verfahren zur herstellung
US7414858B2 (en) 2002-04-11 2008-08-19 Koninklijke Philips Electronics N.V. Method of manufacturing an electronic device
JP3791614B2 (ja) 2002-10-24 2006-06-28 セイコーエプソン株式会社 強誘電体膜、強誘電体メモリ装置、圧電素子、半導体素子、圧電アクチュエータ、液体噴射ヘッド及びプリンタ
US7471170B2 (en) * 2003-03-21 2008-12-30 Nxp B.V. Multilayer stack with compensated resonant circuit
TWI300575B (en) * 2003-11-18 2008-09-01 Via Tech Inc Coplanar transformer
JP2005198241A (ja) * 2003-12-12 2005-07-21 Sony Corp フィルタ回路
US7068138B2 (en) * 2004-01-29 2006-06-27 International Business Machines Corporation High Q factor integrated circuit inductor
JP4707056B2 (ja) * 2005-08-31 2011-06-22 富士通株式会社 集積型電子部品および集積型電子部品製造方法
JP2008034626A (ja) * 2006-07-28 2008-02-14 Tdk Corp 電子部品及びその製造方法
JP2008211420A (ja) * 2007-02-26 2008-09-11 Seiko Instruments Inc 発振器
US7936045B2 (en) * 2007-06-11 2011-05-03 Infineon Technologies Ag Integrated circuit with multi-stage matching circuit
US8353956B2 (en) 2009-02-17 2013-01-15 Valtech Cardio, Ltd. Actively-engageable movement-restriction mechanism for use with an annuloplasty structure
US8278730B2 (en) 2009-10-28 2012-10-02 Infineon Technologies Austria Ag High voltage resistance coupling structure
WO2011102198A1 (ja) * 2010-02-19 2011-08-25 リンテック株式会社 透明導電性フィルムおよびその製造方法並びに透明導電性フィルムを用いた電子デバイス
CN102739264A (zh) * 2011-04-06 2012-10-17 王叶 可调射频电路以及制造该电路的方法
US11227825B2 (en) * 2015-12-21 2022-01-18 Intel Corporation High performance integrated RF passives using dual lithography process

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3027081B2 (ja) * 1993-12-09 2000-03-27 アルプス電気株式会社 薄膜素子
DE4432727C1 (de) * 1994-09-14 1996-03-14 Siemens Ag Integrierte Schaltungsstruktur mit einem aktiven Mikrowellenbauelement und mindestens einem passiven Bauelement
JP2000508116A (ja) 1995-10-31 2000-06-27 ザ ウィタカー コーポレーション 多層金属ポリマ構造を使用するｒｆトランス
US5998838A (en) * 1997-03-03 1999-12-07 Nec Corporation Thin film transistor
US5854126A (en) * 1997-03-31 1998-12-29 Siemens Aktiengesellschaft Method for forming metallization in semiconductor devices with a self-planarizing material
US5969422A (en) * 1997-05-15 1999-10-19 Advanced Micro Devices, Inc. Plated copper interconnect structure
US6255714B1 (en) * 1999-06-22 2001-07-03 Agere Systems Guardian Corporation Integrated circuit having a micromagnetic device including a ferromagnetic core and method of manufacture therefor
DE60238069D1 (de) 2001-08-14 2010-12-02 Nxp Bv Elektronisches bauelement und verfahren zur herstellung

Also Published As

Publication number Publication date
CN1541444A (zh) 2004-10-27
US20040232519A1 (en) 2004-11-25
DE60238069D1 (de) 2010-12-02
EP1436893A2 (de) 2004-07-14
US7176550B2 (en) 2007-02-13
JP2005514761A (ja) 2005-05-19
CN100407573C (zh) 2008-07-30
WO2003017479A2 (en) 2003-02-27
JP4358624B2 (ja) 2009-11-04
WO2003017479A3 (en) 2004-05-06
EP1436893B1 (de) 2010-10-20

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Legal Events

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