ATE487776T1 - Wässriges reinigungsmittel mit kupferspezifischem korrosionsschutzmittel zur abreinigung anorganischer reste von halbleitersubstraten - Google Patents

Wässriges reinigungsmittel mit kupferspezifischem korrosionsschutzmittel zur abreinigung anorganischer reste von halbleitersubstraten

Info

Publication number
ATE487776T1
ATE487776T1 AT02717727T AT02717727T ATE487776T1 AT E487776 T1 ATE487776 T1 AT E487776T1 AT 02717727 T AT02717727 T AT 02717727T AT 02717727 T AT02717727 T AT 02717727T AT E487776 T1 ATE487776 T1 AT E487776T1
Authority
AT
Austria
Prior art keywords
agent
cleaning
copper
corrosion protection
semiconductor substrates
Prior art date
Application number
AT02717727T
Other languages
English (en)
Inventor
William Wojtczak
Fatima Seijo
David Bernhard
Long Nguyen
Original Assignee
Advanced Tech Materials
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/818,073 external-priority patent/US6755989B2/en
Application filed by Advanced Tech Materials filed Critical Advanced Tech Materials
Application granted granted Critical
Publication of ATE487776T1 publication Critical patent/ATE487776T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • H10P70/273—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers the processing being a delineation of conductive layers, e.g. by RIE
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/265—Carboxylic acids or salts thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/266—Esters or carbonates
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3218—Alkanolamines or alkanolimines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3245—Aminoacids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3263—Amides or imides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • H10P70/277—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers the processing being a planarisation of conductive layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Wood Science & Technology (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Emergency Medicine (AREA)
  • Detergent Compositions (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Drying Of Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
AT02717727T 2001-03-27 2002-03-27 Wässriges reinigungsmittel mit kupferspezifischem korrosionsschutzmittel zur abreinigung anorganischer reste von halbleitersubstraten ATE487776T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/818,073 US6755989B2 (en) 1997-01-09 2001-03-27 Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate
PCT/US2002/009401 WO2002077120A1 (en) 2001-03-27 2002-03-27 Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate

Publications (1)

Publication Number Publication Date
ATE487776T1 true ATE487776T1 (de) 2010-11-15

Family

ID=25224596

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02717727T ATE487776T1 (de) 2001-03-27 2002-03-27 Wässriges reinigungsmittel mit kupferspezifischem korrosionsschutzmittel zur abreinigung anorganischer reste von halbleitersubstraten

Country Status (8)

Country Link
EP (1) EP1381656B1 (de)
JP (2) JP4456330B2 (de)
KR (1) KR100874173B1 (de)
CN (2) CN101134930B (de)
AT (1) ATE487776T1 (de)
DE (1) DE60238244D1 (de)
TW (1) TWI258501B (de)
WO (1) WO2002077120A1 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6896826B2 (en) * 1997-01-09 2005-05-24 Advanced Technology Materials, Inc. Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate
JP4867092B2 (ja) * 2001-07-04 2012-02-01 三菱瓦斯化学株式会社 レジスト剥離剤組成物
KR101129433B1 (ko) * 2004-08-30 2012-03-26 삼성전자주식회사 박막 트랜지스터 기판의 제조 방법 및 스트립핑 조성물
CN101162684A (zh) * 2006-10-13 2008-04-16 安集微电子（上海）有限公司 一种半导体晶圆蚀刻灰化后的清洗方法
WO2009011100A1 (ja) 2007-07-19 2009-01-22 Mitsubishi Chemical Corporation Iii族窒化物半導体基板およびその洗浄方法
CN101755324B (zh) 2007-07-26 2011-10-12 三菱瓦斯化学株式会社 清洗和防腐用组合物及半导体元件或显示元件的制造方法
CN101412949A (zh) * 2007-10-19 2009-04-22 安集微电子（上海）有限公司 一种等离子刻蚀残留物清洗液
WO2010042457A1 (en) * 2008-10-09 2010-04-15 Mallinckrodt Baker, Inc. Aqueous acidic formulations for copper oxide etch residue removal and prevention of copper electrodeposition
CN102044407B (zh) * 2009-10-20 2012-04-18 中芯国际集成电路制造(上海)有限公司 芯片的清洗方法
JP2012021151A (ja) * 2010-06-16 2012-02-02 Sanyo Chem Ind Ltd 銅配線半導体用洗浄剤
US9376594B2 (en) 2012-03-16 2016-06-28 Fujimi Incorporated Polishing composition
KR20170086838A (ko) * 2016-01-19 2017-07-27 동우 화인켐 주식회사 경화수지막 박리액 조성물
CN114351128B (zh) * 2021-12-10 2022-12-13 江阴纳力新材料科技有限公司 镀铜液添加剂、镀铜液、镀铜薄膜及其制备方法、负极集流体、锂电池

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3414013A1 (de) * 1984-04-12 1985-10-24 Jürgen 1000 Berlin Kutzner Transportable unterkunft
US5094701A (en) * 1990-03-30 1992-03-10 Air Products And Chemicals, Inc. Cleaning agents comprising beta-diketone and beta-ketoimine ligands and a process for using the same
US5279771A (en) * 1990-11-05 1994-01-18 Ekc Technology, Inc. Stripping compositions comprising hydroxylamine and alkanolamine
US5466389A (en) * 1994-04-20 1995-11-14 J. T. Baker Inc. PH adjusted nonionic surfactant-containing alkaline cleaner composition for cleaning microelectronics substrates
JP2001508239A (ja) * 1997-01-09 2001-06-19 アドバンスド ケミカル システムズ インターナショナル，インコーポレイテッド 水性フッ化アンモニウムおよびアミンを用いた、半導体ウエハ洗浄組成物および方法
JP2000208467A (ja) * 1999-01-14 2000-07-28 Mitsubishi Gas Chem Co Inc 半導体基板洗浄液およびそれを用いた半導体基板の洗浄方法

Also Published As

Publication number Publication date
KR20030093274A (ko) 2003-12-06
EP1381656B1 (de) 2010-11-10
KR100874173B1 (ko) 2008-12-15
CN101134930B (zh) 2011-04-13
CN100343361C (zh) 2007-10-17
TWI258501B (en) 2006-07-21
EP1381656A1 (de) 2004-01-21
DE60238244D1 (de) 2010-12-23
JP4456330B2 (ja) 2010-04-28
WO2002077120A1 (en) 2002-10-03
JP2008219009A (ja) 2008-09-18
EP1381656A4 (de) 2007-06-13
JP2005502734A (ja) 2005-01-27
JP4498424B2 (ja) 2010-07-07
CN101134930A (zh) 2008-03-05
CN1500130A (zh) 2004-05-26

Similar Documents

Publication Publication Date Title
DE60129465D1 (de) 1,3-dicarbonylverbindungen enthaltende halbleiterstrippzusammensetzung
WO2002004233A8 (en) Compositions for cleaning organic and plasma etched residues for semiconductor devices
EP1576072A4 (de) Wässrige phosphorsäurezusammensetzung zur reinigung von halbleiter-vorrichtungen
US6755989B2 (en) Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate
US6896826B2 (en) Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate
IL173664A (en) Stripping and cleaning compositions for microelectronics
DK1105778T3 (da) Silikatholdige alkaliske sammensætninger til rensning af mikorelektroniske substrater
ATE288468T1 (de) Stabile alkalische zusammensetzungen zum reinigen von mikroelektronischen substraten
MY117049A (en) Composition for stripping photoresist and organic materials from substrate surfaces
DE60028962D1 (de) Zusammensetzungen zur reinigung und entfernung von organischen sowie plasmaätzrückständen auf halbleitervorrichtungen
ATE340244T1 (de) Nichtkorrosive reinigungszusammensetzung zur entfernung von plasmaätzrückständen
ATE487776T1 (de) Wässriges reinigungsmittel mit kupferspezifischem korrosionsschutzmittel zur abreinigung anorganischer reste von halbleitersubstraten
DE60230911D1 (de) Chemische spülzusammensetzung
TW200630482A (en) Aqueous based residue removers comprising fluoride
SG152961A1 (en) Flouride-containing photoresist stripper or residue removing cleaning compositions containing conjugate oligomeric or polymeric material of alpha-hydroxycarbonyl compound/amine or ammonia reaction
TW200710611A (en) Photoresist remover composition for removing modified photoresist of semiconductor device
TW200702942A (en) Compositions for the removal of post-etch and ashed photoresist residues and bulk photoresist

Legal Events

Date Code Title Description
UEP Publication of translation of european patent specification

Ref document number: 1381656

Country of ref document: EP