ATE457523T1 - Verfahren zur verringerung von stapelfehler- keimstellen in bipolaren siliziumkarbid- bauelementen - Google Patents
Verfahren zur verringerung von stapelfehler- keimstellen in bipolaren siliziumkarbid- bauelementenInfo
- Publication number
- ATE457523T1 ATE457523T1 AT04784035T AT04784035T ATE457523T1 AT E457523 T1 ATE457523 T1 AT E457523T1 AT 04784035 T AT04784035 T AT 04784035T AT 04784035 T AT04784035 T AT 04784035T AT E457523 T1 ATE457523 T1 AT E457523T1
- Authority
- AT
- Austria
- Prior art keywords
- silicon carbide
- substrate
- thereafter
- etch
- reducing
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/60—Wet etching
- H10P50/64—Wet etching of semiconductor materials
- H10P50/642—Chemical etching
- H10P50/644—Anisotropic liquid etching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
- H10P14/2901—Materials
- H10P14/2902—Materials being Group IVA materials
- H10P14/2904—Silicon carbide
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
- H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
- H10P14/3408—Silicon carbide
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/36—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done before the formation of the materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
- H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
- H10P90/12—Preparing bulk and homogeneous wafers
- H10P90/126—Preparing bulk and homogeneous wafers by chemical etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/931—Silicon carbide semiconductor
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Weting (AREA)
- Bipolar Transistors (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/605,312 US7018554B2 (en) | 2003-09-22 | 2003-09-22 | Method to reduce stacking fault nucleation sites and reduce forward voltage drift in bipolar devices |
| PCT/US2004/030041 WO2005034208A2 (en) | 2003-09-22 | 2004-09-14 | METHOD TO REDUCE STACKING FAULT NUCLEATION SITES AND REDUCE Vf DRIFT IN BIPOLAR DEVICES |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE457523T1 true ATE457523T1 (de) | 2010-02-15 |
Family
ID=34312546
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT04784035T ATE457523T1 (de) | 2003-09-22 | 2004-09-14 | Verfahren zur verringerung von stapelfehler- keimstellen in bipolaren siliziumkarbid- bauelementen |
Country Status (9)
| Country | Link |
|---|---|
| US (2) | US7018554B2 (de) |
| EP (1) | EP1665343B1 (de) |
| JP (1) | JP4723500B2 (de) |
| CN (1) | CN100470725C (de) |
| AT (1) | ATE457523T1 (de) |
| CA (1) | CA2539618A1 (de) |
| DE (1) | DE602004025479D1 (de) |
| TW (1) | TW200525582A (de) |
| WO (1) | WO2005034208A2 (de) |
Families Citing this family (73)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7018554B2 (en) * | 2003-09-22 | 2006-03-28 | Cree, Inc. | Method to reduce stacking fault nucleation sites and reduce forward voltage drift in bipolar devices |
| US7230274B2 (en) * | 2004-03-01 | 2007-06-12 | Cree, Inc | Reduction of carrot defects in silicon carbide epitaxy |
| US7173285B2 (en) * | 2004-03-18 | 2007-02-06 | Cree, Inc. | Lithographic methods to reduce stacking fault nucleation sites |
| JP4639326B2 (ja) * | 2004-03-24 | 2011-02-23 | 独立行政法人産業技術総合研究所 | 半導体装置 |
| US7391058B2 (en) * | 2005-06-27 | 2008-06-24 | General Electric Company | Semiconductor devices and methods of making same |
| US9455356B2 (en) * | 2006-02-28 | 2016-09-27 | Cree, Inc. | High power silicon carbide (SiC) PiN diodes having low forward voltage drops |
| CA2584950A1 (en) * | 2006-04-26 | 2007-10-26 | Kansai Paint Co., Ltd. | Powder primer composition and method for forming coating film |
| JP4946202B2 (ja) * | 2006-06-26 | 2012-06-06 | 日立金属株式会社 | 炭化珪素半導体エピタキシャル基板の製造方法。 |
| US7728402B2 (en) | 2006-08-01 | 2010-06-01 | Cree, Inc. | Semiconductor devices including schottky diodes with controlled breakdown |
| US8432012B2 (en) | 2006-08-01 | 2013-04-30 | Cree, Inc. | Semiconductor devices including schottky diodes having overlapping doped regions and methods of fabricating same |
| WO2008020911A2 (en) | 2006-08-17 | 2008-02-21 | Cree, Inc. | High power insulated gate bipolar transistors |
| JP5131675B2 (ja) * | 2006-08-25 | 2013-01-30 | 国立大学法人京都大学 | 炭化ケイ素基板の製造方法 |
| US8157914B1 (en) | 2007-02-07 | 2012-04-17 | Chien-Min Sung | Substrate surface modifications for compositional gradation of crystalline materials and associated products |
| US8835987B2 (en) | 2007-02-27 | 2014-09-16 | Cree, Inc. | Insulated gate bipolar transistors including current suppressing layers |
| JP4519199B2 (ja) * | 2007-09-03 | 2010-08-04 | パナソニック株式会社 | ウエハ再生方法およびウエハ再生装置 |
| JP2009088223A (ja) * | 2007-09-28 | 2009-04-23 | Hitachi Cable Ltd | 炭化珪素半導体基板およびそれを用いた炭化珪素半導体装置 |
| WO2009048997A1 (en) * | 2007-10-12 | 2009-04-16 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Producing epitaxial layers with low basal plane dislocation concentrations |
| US8232558B2 (en) | 2008-05-21 | 2012-07-31 | Cree, Inc. | Junction barrier Schottky diodes with current surge capability |
| JP5458509B2 (ja) | 2008-06-04 | 2014-04-02 | 日立金属株式会社 | 炭化珪素半導体基板 |
| DE102008060372B4 (de) | 2008-09-05 | 2015-11-05 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Herstellung einer Siliziumkarbid-Epitaxieschicht und eines Siliziumkarbid-Bauelementes |
| US8497552B2 (en) * | 2008-12-01 | 2013-07-30 | Cree, Inc. | Semiconductor devices with current shifting regions and related methods |
| US8294507B2 (en) | 2009-05-08 | 2012-10-23 | Cree, Inc. | Wide bandgap bipolar turn-off thyristor having non-negative temperature coefficient and related control circuits |
| US8629509B2 (en) | 2009-06-02 | 2014-01-14 | Cree, Inc. | High voltage insulated gate bipolar transistors with minority carrier diverter |
| US8193848B2 (en) | 2009-06-02 | 2012-06-05 | Cree, Inc. | Power switching devices having controllable surge current capabilities |
| US8541787B2 (en) | 2009-07-15 | 2013-09-24 | Cree, Inc. | High breakdown voltage wide band-gap MOS-gated bipolar junction transistors with avalanche capability |
| US9464366B2 (en) * | 2009-08-20 | 2016-10-11 | The United States Of America, As Represented By The Secretary Of The Navy | Reduction of basal plane dislocations in epitaxial SiC |
| US8354690B2 (en) | 2009-08-31 | 2013-01-15 | Cree, Inc. | Solid-state pinch off thyristor circuits |
| US9117739B2 (en) | 2010-03-08 | 2015-08-25 | Cree, Inc. | Semiconductor devices with heterojunction barrier regions and methods of fabricating same |
| JP4850960B2 (ja) * | 2010-04-07 | 2012-01-11 | 新日本製鐵株式会社 | エピタキシャル炭化珪素単結晶基板の製造方法 |
| US8415671B2 (en) | 2010-04-16 | 2013-04-09 | Cree, Inc. | Wide band-gap MOSFETs having a heterojunction under gate trenches thereof and related methods of forming such devices |
| SE1051137A1 (sv) | 2010-10-29 | 2012-04-30 | Fairchild Semiconductor | Förfarande för tillverkning av en kiselkarbid bipolär transistor och kiselkarbid bipolär transistor därav |
| JP5678622B2 (ja) | 2010-12-03 | 2015-03-04 | 株式会社デンソー | 炭化珪素単結晶の製造方法 |
| US9142662B2 (en) | 2011-05-06 | 2015-09-22 | Cree, Inc. | Field effect transistor devices with low source resistance |
| US9029945B2 (en) | 2011-05-06 | 2015-05-12 | Cree, Inc. | Field effect transistor devices with low source resistance |
| US9673283B2 (en) | 2011-05-06 | 2017-06-06 | Cree, Inc. | Power module for supporting high current densities |
| JP2013026247A (ja) * | 2011-07-15 | 2013-02-04 | Sumitomo Electric Ind Ltd | 半導体装置の製造方法 |
| JP5961357B2 (ja) * | 2011-09-09 | 2016-08-02 | 昭和電工株式会社 | ＳｉＣエピタキシャルウェハ及びその製造方法 |
| US9373617B2 (en) | 2011-09-11 | 2016-06-21 | Cree, Inc. | High current, low switching loss SiC power module |
| US9640617B2 (en) | 2011-09-11 | 2017-05-02 | Cree, Inc. | High performance power module |
| US8680587B2 (en) | 2011-09-11 | 2014-03-25 | Cree, Inc. | Schottky diode |
| US8664665B2 (en) | 2011-09-11 | 2014-03-04 | Cree, Inc. | Schottky diode employing recesses for elements of junction barrier array |
| US8618582B2 (en) | 2011-09-11 | 2013-12-31 | Cree, Inc. | Edge termination structure employing recesses for edge termination elements |
| WO2013078219A1 (en) | 2011-11-23 | 2013-05-30 | University Of South Carolina | Method of growing high quality, thick sic epitaxial films by eliminating silicon gas phase nucleation and suppressing parasitic deposition |
| US9644288B2 (en) | 2011-11-23 | 2017-05-09 | University Of South Carolina | Pretreatment method for reduction and/or elimination of basal plane dislocations close to epilayer/substrate interface in growth of SiC epitaxial films |
| JP5717674B2 (ja) | 2012-03-02 | 2015-05-13 | 株式会社東芝 | 半導体装置の製造方法 |
| US8860040B2 (en) | 2012-09-11 | 2014-10-14 | Dow Corning Corporation | High voltage power semiconductor devices on SiC |
| US9018639B2 (en) | 2012-10-26 | 2015-04-28 | Dow Corning Corporation | Flat SiC semiconductor substrate |
| CN102931118B (zh) * | 2012-11-27 | 2015-09-02 | 杭州士兰集成电路有限公司 | 外延缺陷分析结构及制造方法和外延缺陷的分析方法 |
| WO2014084550A1 (ko) * | 2012-11-30 | 2014-06-05 | 엘지이노텍 주식회사 | 에피택셜 웨이퍼, 이를 이용한 스위치 소자 및 발광 소자 |
| JP2014146748A (ja) * | 2013-01-30 | 2014-08-14 | Toshiba Corp | 半導体装置及びその製造方法並びに半導体基板 |
| US9797064B2 (en) | 2013-02-05 | 2017-10-24 | Dow Corning Corporation | Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion |
| US9738991B2 (en) | 2013-02-05 | 2017-08-22 | Dow Corning Corporation | Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion |
| US9017804B2 (en) | 2013-02-05 | 2015-04-28 | Dow Corning Corporation | Method to reduce dislocations in SiC crystal growth |
| US8940614B2 (en) | 2013-03-15 | 2015-01-27 | Dow Corning Corporation | SiC substrate with SiC epitaxial film |
| US9129799B2 (en) * | 2013-09-27 | 2015-09-08 | The United States Of America, As Represented By The Secretary Of The Navy | Elimination of basal plane dislocations in post growth silicon carbide epitaxial layers by high temperature annealing while preserving surface morphology |
| US9279192B2 (en) | 2014-07-29 | 2016-03-08 | Dow Corning Corporation | Method for manufacturing SiC wafer fit for integration with power device manufacturing technology |
| JP2016063190A (ja) * | 2014-09-22 | 2016-04-25 | 住友電気工業株式会社 | 炭化珪素エピタキシャル基板の製造方法、炭化珪素エピタキシャル基板および炭化珪素半導体装置 |
| CN104993030A (zh) * | 2015-06-08 | 2015-10-21 | 国网智能电网研究院 | 一种p型低缺陷碳化硅外延片的制备方法 |
| CN104851781B (zh) * | 2015-06-08 | 2020-04-14 | 国网智能电网研究院 | 一种n型低偏角碳化硅外延片的制备方法 |
| CN104934318B (zh) * | 2015-06-08 | 2018-12-04 | 国网智能电网研究院 | 一种n型低缺陷碳化硅外延片的制备方法 |
| CN105006423B (zh) * | 2015-06-08 | 2018-12-18 | 国网智能电网研究院 | 一种p型低偏角碳化硅外延片的制备方法 |
| CN105140111A (zh) * | 2015-08-11 | 2015-12-09 | 中国科学院半导体研究所 | 消除碳化硅外延面穿通缺陷的方法 |
| CN105244255B (zh) * | 2015-08-27 | 2019-03-05 | 中国电子科技集团公司第十三研究所 | 一种碳化硅外延材料及其生产方法 |
| JP6791274B2 (ja) | 2017-02-20 | 2020-11-25 | 日立金属株式会社 | 炭化ケイ素積層基板およびその製造方法 |
| WO2020095872A1 (ja) | 2018-11-05 | 2020-05-14 | 学校法人関西学院 | ＳｉＣ半導体基板及びその製造方法及びその製造装置 |
| JP7129889B2 (ja) * | 2018-11-09 | 2022-09-02 | 昭和電工株式会社 | ＳｉＣエピタキシャルウェハの製造方法 |
| WO2021025085A1 (ja) | 2019-08-06 | 2021-02-11 | 学校法人関西学院 | ＳｉＣ基板、ＳｉＣエピタキシャル基板、ＳｉＣインゴット及びこれらの製造方法 |
| CN110767593A (zh) * | 2019-10-14 | 2020-02-07 | 芯盟科技有限公司 | 一种半导体结构及其形成方法 |
| CN111005068A (zh) * | 2019-12-09 | 2020-04-14 | 中国电子科技集团公司第五十五研究所 | 一种生长高表面质量超厚igbt结构碳化硅外延材料的方法 |
| US12575152B2 (en) | 2021-01-15 | 2026-03-10 | Sumitomo Electric Industries, Ltd. | Silicon carbide epitaxial substrate and silicon carbide semiconductor device |
| JP7494768B2 (ja) * | 2021-03-16 | 2024-06-04 | 信越半導体株式会社 | 炭化珪素単結晶ウェーハの結晶欠陥評価方法 |
| JP7294502B1 (ja) | 2022-06-03 | 2023-06-20 | 株式会社レゾナック | ＳｉＣ単結晶基板 |
| CN118516765A (zh) * | 2024-04-29 | 2024-08-20 | 山东天岳先进科技股份有限公司 | 一种n型碳化硅衬底及碳化硅晶体 |
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| US7018554B2 (en) * | 2003-09-22 | 2006-03-28 | Cree, Inc. | Method to reduce stacking fault nucleation sites and reduce forward voltage drift in bipolar devices |
-
2003
- 2003-09-22 US US10/605,312 patent/US7018554B2/en not_active Expired - Lifetime
-
2004
- 2004-09-14 CN CNB2004800274044A patent/CN100470725C/zh not_active Expired - Lifetime
- 2004-09-14 JP JP2006528051A patent/JP4723500B2/ja not_active Expired - Lifetime
- 2004-09-14 EP EP04784035A patent/EP1665343B1/de not_active Expired - Lifetime
- 2004-09-14 AT AT04784035T patent/ATE457523T1/de not_active IP Right Cessation
- 2004-09-14 WO PCT/US2004/030041 patent/WO2005034208A2/en not_active Ceased
- 2004-09-14 CA CA002539618A patent/CA2539618A1/en not_active Abandoned
- 2004-09-14 DE DE602004025479T patent/DE602004025479D1/de not_active Expired - Lifetime
- 2004-09-22 TW TW093128733A patent/TW200525582A/zh unknown
-
2006
- 2006-03-27 US US11/389,825 patent/US7279115B1/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US20050064723A1 (en) | 2005-03-24 |
| DE602004025479D1 (de) | 2010-03-25 |
| JP2007506289A (ja) | 2007-03-15 |
| EP1665343B1 (de) | 2010-02-10 |
| WO2005034208A2 (en) | 2005-04-14 |
| US7279115B1 (en) | 2007-10-09 |
| US20070221614A1 (en) | 2007-09-27 |
| CN1856862A (zh) | 2006-11-01 |
| JP4723500B2 (ja) | 2011-07-13 |
| CA2539618A1 (en) | 2005-04-14 |
| WO2005034208A3 (en) | 2005-06-02 |
| EP1665343A2 (de) | 2006-06-07 |
| TW200525582A (en) | 2005-08-01 |
| CN100470725C (zh) | 2009-03-18 |
| US7018554B2 (en) | 2006-03-28 |
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